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Juan Cristhian Luque Gutierrez

Publications and source records attributed to Juan Cristhian Luque Gutierrez.

2 recordsLinked to original sources

Precision cross section measurements of neutron-induced non-elastic gamma production reactions at 14 MeV

We present a technique for high-precision absolute measurements of gamma-ray production cross sections (n,xg) induced by 14 MeV neutrons. The technique is based on the Associated Particle Imaging (API) method, which tags individual neutrons emitted from a deuterium-tritium source with their associated alpha-particles, enabling coincidence-based suppression of lower-energy neutrons and room background signals, while also providing neutron flux measurements with uncertainties on the order of 1%. This compact, laboratory-scale technique has the potential to address gaps and discrepancies in existing cross section libraries at a fraction of the cost of large-scale dedicated facilities, with direct applications in active neutron interrogation, detector calibration, nuclear fusion science, and Monte Carlo simulations, among others. We demonstrate the technique through proof-of-concept experiments on thin and thick samples of natural Fe (1 mm, 8 mm) and natural C (2 mm, 10 mm). For Fe, gamma-ray production cross sections were measured for the 846.78 and 1238.33 keV transitions from the first and second excited states of 56Fe. For C, the (n,n'g) cross section was measured for the 4438.91 keV transition from the first excited state of 12C. Measurements were performed at 110 and 48 degrees relative to the neutron beam to characterize gamma-ray anisotropy. For the thin samples, the measured cross sections are 723 +/- 70 mb (56Fe, 846.78 keV, 110 deg), 303 +/- 42 mb (56Fe, 1238.33 keV, 110 deg), 755 +/- 106 mb (56Fe, 846.78 keV, 48 deg), 321 +/- 149 mb (56Fe, 1238.33 keV, 48 deg), 141 +/- 16 mb (12C, 4438.91 keV, 110 deg), and 279 +/- 105 mb (12C, 4438.91 keV, 48 deg). Uncertainties are dominated by counting statistics and detector efficiency calibration, both of which can be reduced in future experiments to achieve overall uncertainties of 5% or better.

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Characterization of GaN:Si and ZnO:Ga for position-resolved fast timing applications

We present the characterization of two fast, crystalline inorganic scintillators, silicon-doped gallium nitride (GaN:Si) and gallium-doped zinc oxide (ZnO:Ga), and compare their performance with cerium-doped yttrium aluminium perovskite (YAP:Ce) for in-vacuum alpha-detection applications that require high-performance timing, position, and energy resolution, such as 3D elemental mapping, medical imaging, and homeland security applications. In this paper, we propose ZnO:Ga and GaN:Si as high-performance drop-in replacements for the alpha detector in Associated Particle Imaging (API) systems. However, the results reported here also have wide applicability. Prior work has reported on polycrystalline forms of ZnO:Ga, which suffer from self-absorption. To our knowledge, GaN:Si has not been proposed to be used in API systems. We present room-temperature scintillation time constants obtained via X-ray-induced time-correlated single-photon counting for both proposed materials. They both exhibit exceedingly fast rise times of <15ps, and high brightness >1000ph/MeV with resolved alpha-peaks. Single-crystal ZnO:Ga and single-crystal GaN:Si yield single-component decays of 805ps and 32ps, respectively. Using a plastic scintillator reference setup, coincidence timing resolution (CTR) and detector timing resolution (DTR) measurements demonstrate a >3x improvement in timing resolution compared to traditional YAP:Ce. GaN:Si and ZnO:Ga exhibit (35(9))ps and (49(5))ps DTR, respectively, compared to(144(2))ps for conventional, single-crystal YAP:Ce. Finally, we evaluate their position resolution in an experimental setup designed for API and measure better than 0.2mm for YAP:Ce and approximately 1mm for GaN:Si. We obtain a position resolution of 0.3mm for ZnO:Ga from simulations. We also present alpha-induced ionoluminescence emission spectra that reveal direct, red-shifted near-bandgap emission.

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