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Jude Laverock

Publications and source records attributed to Jude Laverock.

7 recordsLinked to original sources

Local Structure of Epitaxial Single Crystal UO$_{2+x}$ Thin Films

The influence of oxygen stoichiometry on the uranium local environment is explored in epitaxial single crystal uranium oxide thin films grown by DC magnetron sputtering. Through post-growth annealing, the stoichiometry of as-grown UO$_{2}$ films are tuned over an approximate stoichiometry range of $0.07 \leq x \leq 0.20$, estimated with X-ray photoelectron spectroscopy measurements of the U$-4f$ and O$-1s$ peaks. The local structure of the thin films are then probed using extended X-ray absorption fine structure measurements at the U $L_{3}$ absorption edge. We observe both the evolution of the U local environment of as a function of oxidation in UO$_{2+x}$, and that the near stoichiometric UO$_{2}$ film replicates the local structure of bulk UO$_{2}$ material standards well. The series of stoichiometrically varied samples highlights the non-trivial transitional behaviour of the UO$_{2+x}$ oxygen sublattice with increasing oxygen content in this stoichiometric regime, while also demonstrating the efficacy of this thin film synthesis route for actinide studies beyond their established use as idealised surfaces, which could be readily adapted for further stoichiometrically tailored material studies and UO$_{2+x}$ device fabrication.

cond-mat.mtrl-sci

Revealing the Electronic Structure of van der Waals Antiferromagnetic NiPS$_3$ through Synchrotron-Based $\mu$-ARPES and Alkali Metal Dosing

This study presents a comprehensive analysis of the band structure in NiPS$_3$, a van der Waals layered antiferromagnet, utilizing high-resolution synchrotron-based angle-resolved photoemission spectroscopy (ARPES) and corroborative density functional theory (DFT) calculations. By tuning the parameters of the light source, we obtained a very clear and wide energy range band structure of NiPS$_3$. Comparison with DFT calculations allows for the identification of the orbital character of the observed bands. Our DFT calculations perfectly match the experimental results, and no adaptations were made to the calculations based on the experimental outcomes. The appearance of novel electronic structure upon alkali metal dosing (AMD) were also obtained in this ARPES study. Above valence band maximum, structure of conduction bands and bands from defect states were firstly observed in NiPS$_3$. We provide the direct determination of the band gap of NiPS$_3$ as 1.3 eV from the band structure by AMD. In addition, detailed temperature dependent ARPES spectra were obtained across a range that spans both below and above the N\'eel transition temperature of NiPS$_3$. We found that the paramagnetic and antiferromagnetic states have almost identical spectra, indicating the highly localized nature of Ni $d$ states.

cond-mat.mtrl-sci

Quantifying and mitigating optical surface loss in suspended GaAs photonic integrated circuits

Understanding and mitigating optical loss is critical to the development of high-performance photonic integrated circuits (PICs). Especially in high refractive index contrast compound semiconductor (III-V) PICs, surface absorption and scattering can be a significant loss mechanism, and needs to be suppressed. Here, we quantify the optical propagation loss due to surface state absorption in a suspended GaAs photonic integrated circuits (PIC) platform, probe its origins using X-ray photoemission spectroscopy (XPS) and spectroscopic ellipsometry (SE), and show that it can be mitigated by surface passivation using alumina ($Al_{2}O_{3}$). We also explore potential routes towards achieving passive device performance comparable to state-of-the-art silicon PICs

physics.optics

Direct measurement of a remnant Fermi surface in SmB6

The quest to understand the nature of the electronic state in SmB6 has been challenging, perplexing and surprising researchers for over half a century. In the theoretically predicted topological Kondo insulator SmB6, the nature of the bulk electronic structure is not characterised unambiguously by quantum oscillations due to contrary interpretations. One simple definition of an electrical insulator is a material that lacks a Fermi surface and here we report the results of our investigation into its existence in SmB6 by Compton scattering. Compton scattering measures occupied electron momentum states, is bulk sensitive due to the high energy of the incoming photons and is also an ultra-fast probe of the correlated many-body electron wavefunction. Remarkably, direct evidence for a three-dimensional remnant Fermi surface is observed. However, a further dichotomy is raised in that the full occupancy expected of a conventional metal is not reproduced. Our observation of a remnant Fermi surface using a momentum-resolved probe provides significant new evidence that the paradigm of a bulk insulator is not robust for SmB6.

cond-mat.str-el

Charge order from structured coupling in VSe$_2$

Charge order--ubiquitous among correlated materials--is customarily described purely as an instability of the electronic structure. However, the resulting theoretical predictions often do not match high-resolution experimental data. A pertinent case is $1T$-VSe$_2$, whose single-band Fermi surface and weak-coupling nature make it qualitatively similar to the Peierls model underlying the traditional approach. Despite this, its Fermi surface is poorly nested, the thermal evolution of its charge density wave (CDW) ordering vectors displays an unexpected jump, and the CDW gap itself evades detection in direct probes of the electronic structure. We demonstrate that the thermal variation of the CDW vectors is naturally reproduced by the electronic susceptibility when incorporating a structured, momentum-dependent electron-phonon coupling, while the evasive CDW gap presents itself as a localized suppression of spectral weight centered above the Fermi level. Our results showcase the general utility of incorporating a structured coupling in the description of charge ordered materials, including those that appear unconventional.

cond-mat.str-el

Extreme Fermi surface smearing in a maximally disordered concentrated solid solution

We show that the Fermi surface can survive the presence of extreme compositional disorder in the equiatomic alloy Ni$_{0.25}$Fe$_{0.25}$Co$_{0.25}$Cr$_{0.25}$. Our high-resolution Compton scattering experiments reveal a Fermi surface which is smeared across a significant fraction of the Brillouin zone (up to 40\% of $\frac{2π}{a}$). The extent of this smearing and its variation on and between different sheets of the Fermi surface has been determined, and estimates of the electron mean-free-path and residual resistivity have been made by connecting this smearing with the coherence length of the quasiparticle states.

cond-mat.mtrl-sci

Transport behavior and electronic structure of phase pure VO2 thin films grown on c-plane sapphire under different O2 partial pressure

We grew highly textured phase pure VO2 thin films on c-plane Al2O3 substrates with different oxygen partial pressure. X-ray absorption and photoemission spectroscopy confirm the identical valence state of vanadium ions despite the different oxygen pressure during the deposition. As the O2 flow rate increases, the [010] lattice parameter for monoclinic VO2 was reduced and coincidently distinctive changes in the metal- semiconductor transition (MST) and transport behaviors were observed despite the identical valence state of vanadium in these samples. We discuss the effect of the oxygen partial pressure on the monoclinic structure and electronic structure of VO2, and consequently the MST.

cond-mat.mtrl-sci