arXiv subjects

Judy J. Cha

Publications and source records attributed to Judy J. Cha.

At least 19 recordsLinked to original sources

arXiv2026

Controlling Intertwined Electronic Orders in FeSe with Exfoliation

Controlling intertwined electronic orders in two-dimensional superconductors offers an effective route to answering fundamental questions and engineering new quantum devices. However, tuning the balance between competing orders typically requires complex chemistry, strain, or interface engineering. Here, we show that a pristine alternative is the dimensional reduction of the unconventional superconductor FeSe. Exfoliation suppresses the bulk electronic nematic response and switches the superconducting symmetry from bulk s-wave to d-wave-dominant. Transport, electron microscopy, and Raman spectroscopy establish the substantial weakening of nematic order in thin flakes. To probe superconductivity, we perform angle-dependent Andreev reflection spectroscopy on pristine crystal edges. As the junction's orientation is rotated, the spectra evolve from zero-energy bound states to coherence peaks. The injection angle, field, and temperature dependence, along with theoretical modeling, confirm that exfoliation switches the superconducting symmetry. Our results suggest a versatile superconducting platform for engineering quantum orders and provide fresh insights into the underlying pairing mechanisms.

cond-mat.supr-con↗

arXiv2026

Nontrivial Boundary-Mediated Superconducting Transport in a TRSB Topological Iron-Based Superconductor

The interplay of superconductivity, band topology, and spontaneous time-reversal-symmetry breaking (TRSB) is expected to enable topological superconducting boundary states. FeTe0.55Se0.45 provides a promising single-material platform because it combines superconductivity, nontrivial band topology, and spontaneous magnetization in the superconducting state. Here we report evidence for a boundary-mediated superconducting transport response in exfoliated Fe(Te,Se) devices. Polar Kerr measurements show that TRSB emerges below TKerr < Tc and coexists with superconductivity across multiple compositions, providing an independent symmetry-breaking scale for transport. Using crystallographically sharp, continuous edges and side-surface-dominant contacts, we find that topological FeTe0.55Se0.45 exhibits an anomalous conductance plateau absent in topologically trivial FeTe0.40Se0.60 and Fe1.02Te0.55Se0.45 under comparable measurements. This plateau requires uninterrupted sharp edges connecting source and drain, persists over micrometer-scale separations far exceeding the bulk coherence length, shows strongly suppressed thermal broadening, and collapses when the drain is moved to the top surface. Its temperature evolution follows the TRSB scale: the plateau remains weakly broadened below T*Kerr and disappears near TKerr rather than Tc. These doping-selective, edge-geometry-dependent, TRSB-correlated, and long-range nonlocal signatures establish experimental criteria for identifying boundary-mediated superconducting transport in FeTe0.55Se0.45 and motivate phase-sensitive and theoretical studies of its microscopic origin.

cond-mat.supr-con↗

arXiv2026

Reversible Superdense Ordering of Tetragonal Lithium in a Layered Material

Understanding lithium (Li) ordering and dynamics is foundational in energy storage. X-ray based experimental methods do not simultaneously provide atomic structure information together with chemical composition and local bonding information for lithium in solids. Here we employ scanning transmission electron microscopy (STEM) and combine imaging, spectroscopy, and diffraction within a single experiment, to observe, in situ, an all-solid-state electrochemical cell. By integrating multimodal STEM with other complementary techniques, we report a complete mapping of lithium intercalation in a layered system, LaTe3. We identify three ordered phases of LixLaTe3 with x ranging from 1/3 to 3 with in-plane strain of up to 5%. At a very high lithium concentration of Li3LaTe3, we discover an unexpected three-layer, superdense lithium phase with tetragonal symmetry occupying the van der Waals gap. This represents a new Li phase that is reversible. Our multimodal approach thus enables complete tracking of lithium ordering and dynamics, important for next-generation energy storage applications.

cond-mat.mtrl-sci↗

arXiv2026

Resist-free shadow deposition using silicon trenches for Josephson junctions in superconducting qubits

Superconducting qubit fabrication innovations continue to be explored to achieve higher performance. Despite improvements to base layer fabrication and processing, resist-based Josephson junction (JJ) schemes have largely remained unchanged. The polymer mask during deposition causes chemical contamination and limits in situ and ex situ surface preparation, junction materials, and scalability. Here, we demonstrate a resist-free approach to junction fabrication based on etched silicon trenches that is CMOS compatible and easily integrated into existing innovations in qubit base layer fabrication and chemical processing. We fabricate Al-AlOx-Al JJs and qubits using this method, measuring median energy relaxation times up to 184 microseconds. We find minimal contamination at the substrate-metal interface and fluctuations of energy relaxation on a 35 hour timescale that are narrow and normally distributed. The method widens the process window for substrate preparation and new materials platforms.

quant-ph↗

arXiv2025

Scalable and deterministic construction of moiré superlattice in 2D materials using stressor films

Moiré superlattice in two-dimensional (2D) materials provides a powerful platform to engineer emergent electronic states, yet the construction of moiré superlattices remains lab-scale, involving much trial and error and with little control. Here, we demonstrate the construction of a heterostrain-induced moiré superlattice in transition metal dichalcogenides using a scalable process that deterministically induces strain to 2D materials. By applying patterned thin-film stressors and probing the resulting structures with scanning transmission electron microscopy, we directly resolve the induced heterostrain, lattice deformations, and stacking variations that produce the moiré superlattice. We find that uniaxial and biaxial heterostrain give rise to distinct moiré patterns, including stripes and distorted hexagonal patterns. With this approach, we create in-plane polar distortions and thus in-plane polarization at the domain boundaries of the moiré superlattice in MoS$_2$. The deterministic and scalable construction of moiré patterns using a well-established scalable process opens opportunities to design new moiré geometries in 2D materials.

cond-mat.mtrl-sci↗

arXiv2025

Melting point depression of charge density wave in 1T-TiSe$_2$ due to size effects

Classical nucleation theory predicts size-dependent nucleation and melting due to surface and confinement effects at the nanoscale. In correlated electronic states, observation of size-dependent nucleation and melting is rarely reported, likely due to the extremely small length scales necessary to observe such effects for electronic states. Here, using 1T-TiSe$_2$ nanoflakes as a prototypical two-dimensional (2D) charge density wave (CDW) system, we perform in-situ cryogenic electron microscopy with temperature down to 20 K and observe size-dependent nucleation and melting of CDWs. Specifically, we observe a melting point depression of CDW for 1T-TiSe$_2$ flakes with lateral sizes less than 100 nm. By fitting experimental data to a Ginzburg-Landau model, we estimate a zero-temperature correlation length of 10--50 nm, which matches the reported CDW domain size for 1T-TiSe$_2$. As the flake size approaches the correlation length, the divergence of the CDW correlation length near the transition is cut off by the finite flake size, limiting long-range order and thereby lowering the transition temperature. For very small flakes whose size is close to the correlation length, we also observe absence of CDWs, as predicted by the model. We thus show that an electronic phase transition follows classical nucleation theory.

cond-mat.mtrl-sci↗

arXiv2025

Weyl-Superconductivity revealed by Edge Mode mediated Nonlocal Transport

Topological superconductivity (TSC) hosts exotic modes enabling error-free quantum computation and low-temperature spintronics. Despite preliminary evidence of edge modes, unambiguous signatures remain undetected. Here, we report the first observation of protected, non-local transport from the edge modes of the potential Weyl-superconductor \ch{FeTe_{0.55}Se_{0.45}}. Namely resonant charge injection, ballistic transport, and extraction via edge modes. An anomalous conductance plateau emerges only when topological, superconducting, and magnetic phases coexist, with source-drain contacts coupled via the edge. Moving the drain to the bulk switches the non-local transport process to a local Andreev process, generating a zero-bias conductance peak (ZBCP). The edge mode's topological protection is confirmed by its insensitivity to external magnetic fields and increasing temperatures until the spontaneous magnetization is substantially suppressed. Our findings provide a new methodology to demonstrate TSC edge states in \ch{FeTe_{0.55}Se_{0.45}} via topologically protected non-local transport.

cond-mat.supr-con↗

arXiv2025

Nanomolding single-crystalline CoIn3 and RhIn3 nanowires

Intermetallic compounds containing transition metals and group III-V metals tend to possess strong correlations and high catalytic activities, both of which can be enhanced via reduced dimensionality. Nanostructuring is an effective approach to explore this possibility, yet the synthesis of nanostructured intermetallics is challenging due to vast differences in melting points and vapor pressures of the constituent elements. In this work, we demonstrate that this challenge can be overcome with thermomechanical nanomolding (TMNM), exemplified by the synthesis of intermetallic CoIn3 and RhIn3 nanowires. We show that TMNM successfully extrudes single-crystalline nanowires of these compounds down to the 20 nm diameter range, and the nanowires remain metallic with resistivity values higher than calculated bulk resistivity. We discuss possible effects of surface roughness scattering, vacancy-induced scattering, and surface oxidation, on the measured resistivities of the nanowires. For CoIn3 nanowires, the measured resistivity values are the first reported values for this compound.

cond-mat.mtrl-sci↗

arXiv2025

Surface-dominant transport in Weyl semimetal NbAs nanowires for next-generation interconnects

Ongoing demands for smaller and more energy efficient electronic devices necessitate alternative interconnect materials with lower electrical resistivity at reduced dimensions. Despite the emergence of many promising candidates, synthesizing high quality nanostructures remains a major bottleneck in evaluating their performance. Here, we report the successful synthesis of Weyl semimetal NbAs nanowires via thermomechanical nanomolding, achieving single crystallinity and controlled diameters as small as 40 nm. Our NbAs nanowires exhibit a remarkably low room-temperature resistivity of 9.7 +/- 1.6 microOhm-cm, which is three to four times lower than their bulk counterpart. Theoretical calculations corroborate the experimental observations, attributing this exceptional resistivity reduction to surface dominant conduction with long carrier lifetime at finite temperatures. Further characterization of NbAs nanowires and bulk single crystals reveals high breakdown current density, robust stability, and superior thermal conductivity. Collectively, these properties highlight the strong potential of NbAs nanowires as next-generation interconnects, which can surpass the limitations of current copper-based interconnects. Technologically, our findings present a practical application of topological materials, while scientifically showcasing the fundamental properties uniquely accessible in nanoscale platforms.

cond-mat.mes-hall↗

arXiv2024

Uncovering the Hidden Ferroaxial Density Wave as the Origin of the Axial Higgs Mode in RTe$_3$

The recent discovery of an axial amplitude (Higgs) mode in the long-studied charge density wave (CDW) systems GdTe$_3$ and LaTe$_3$ suggests a heretofore unidentified hidden order. A theoretical study proposed that the axial Higgs results from a hidden ferroaxial component of the CDW, which could arise from non-trivial orbital texture. Here, we report extensive experimental studies on ErTe$_3$ and HoTe$_3$ that possess a high-temperature CDW similar to other RTe$_3$ (R = rare earth), along with an additional low-temperature CDW with an orthogonal ordering vector. Combining Raman spectroscopy with large-angle convergent beam electron diffraction (LACBED), rotational anisotropy second-harmonic generation (RA-SHG), and muon-spin relaxation ($μ$SR), we provide unambiguous evidence that the high-temperature CDW breaks translation, rotation, and all vertical and diagonal mirror symmetries, but not time-reversal or inversion. In contrast, the low-temperature CDW only additionally breaks translation symmetry. Simultaneously, Raman scattering shows the high-temperature CDW produces an axial Higgs mode while the low-temperature mode is scalar. The weak monoclinic structural distortion and clear axial response in Raman and SHG are consistent with a ferroaxial phase in RTe$_3$ driven by coupled orbital and charge orders. Thus, our study provides a new standard for uncovering unconventional orders and confirms the power of Higgs modes to reveal them.

cond-mat.str-el↗

arXiv2024

Vacancy-induced suppression of CDW order and its impact on magnetic order in kagome antiferromagnet FeGe

Two-dimensional (2D) kagome lattice metals are interesting because they display flat electronic bands, Dirac points, Van Hove singularities, and can have interplay between charge density wave (CDW), magnetic order, and superconductivity. In kagome lattice antiferromagnet FeGe, a short-range CDW order was found deep within an antiferromagnetically ordered state, interacting with the magnetic order. Surprisingly, post-growth annealing of FeGe at 560$^{\circ}$C can suppress the CDW order while annealing at 320$^{\circ}$C induces a long-range CDW order, with the ability to cycle between the states repeatedly by annealing. Here we perform transport, neutron scattering, scanning transmission electron microscopy (STEM), and muon spin rotation ($μ$SR) experiments to unveil the microscopic mechanism of the annealing process and its impact on magneto-transport, CDW, and magnetic properties of FeGe. We find that 560$^{\circ}$C annealing creates germanium vacancies uniformly distributed throughout the FeGe kagome lattice, which prevent the formation of Ge-Ge dimers necessary for the CDW order. Upon annealing at 320$^{\circ}$C, the system segregates into stoichiometric FeGe regions with long-range CDW order and regions with stacking faults that act as nucleation sites for the CDW. The presence or absence of CDW order greatly affects the anomalous Hall effect, incommensurate magnetic order, and spin-lattice coupling in FeGe, thus placing FeGe as the only known kagome lattice material with a tunable CDW and magnetic order, potentially useful for sensing and information transmission.

cond-mat.str-el↗

arXiv2024

Giant anisotropic magnetoresistance in few-layer α-RuCl3 tunnel junctions

The spin-orbit assisted Mott insulator $α$-RuCl3 is proximate to the coveted quantum spin liquid (QSL) predicted by the Kitaev model. In the search for the pure Kitaev QSL, reducing the dimensionality of this frustrated magnet by exfoliation has been proposed as a way to enhance magnetic fluctuations and Kitaev interactions. Here, we perform angle-dependent tunneling magnetoresistance (TMR) measurements on ultrathin $α$-RuCl3 crystals with various layer numbers to probe their magnetic, electronic and crystal structure. We observe a giant change in resistance - as large as ~2500% - when the magnetic field rotates either within or out of the $α$-RuCl3 plane, a manifestation of the strongly anisotropic spin interactions in this material. In combination with scanning transmission electron microscopy, this tunneling anisotropic magnetoresistance (TAMR) reveals that few-layer $α$-RuCl3 crystals remain in the high-temperature monoclinic phase at low temperature. It also shows the presence of a zigzag antiferromagnetic order below the critical temperature TN ~ 14 K, which is twice the one typically observed in bulk samples with rhombohedral stacking. Our work offers valuable insights into the relation between the stacking order and magnetic properties of this material, which helps lay the groundwork for creating and electrically probing exotic magnetic phases like QSLs via van der Waals engineering.

cond-mat.str-el↗

arXiv2023

1D-confined crystallization routes for tungsten phosphides

Topological materials confined in one-dimension (1D) can transform computing technologies, such as 1D topological semimetals for nanoscale interconnects and 1D topological superconductors for fault-tolerant quantum computing. As such, understanding crystallization of 1D-confined topological materials is critical. Here, we demonstrate 1D-confined crystallization routes during template-assisted nanowire synthesis where we observe diameter-dependent phase selectivity for topological metal tungsten phosphides. A phase bifurcation occurs to produce tungsten monophosphide and tungsten diphosphide at the cross-over nanowire diameter of ~ 35 nm. Four-dimensional scanning transmission electron microscopy was used to identify the two phases and to map crystallographic orientations of grains at a few nm resolution. The 1D-confined phase selectivity is attributed to the minimization of the total surface energy, which depends on the nanowire diameter and chemical potentials of precursors. Theoretical calculations were carried out to construct the diameter-dependent phase diagram, which agrees with experimental observations. Our find-ings suggest a new crystallization route to stabilize topological materials confined in 1D.

cond-mat.mtrl-sci↗

arXiv2023

In operando cryo-STEM of pulse-induced charge density wave switching in TaS$_2$

The charge density wave (CDW) material 1T-TaS$_2$ exhibits a pulse-induced insulator-to-metal transition, which shows promise for next-generation electronics such as memristive memory and neuromorphic hardware. However, the rational design of TaS$_2$ devices is hindered by a poor understanding of the switching mechanism, the pulse-induced phase, and the influence of material defects. Here, we operate a 2-terminal TaS$_2$ device within a scanning transmission electron microscope (STEM) at cryogenic temperature, and directly visualize the changing CDW structure with nanoscale spatial resolution and down to 300 μs temporal resolution. We show that the pulse-induced transition is driven by Joule heating, and that the pulse-induced state corresponds to nearly commensurate and incommensurate CDW phases, depending on the applied voltage amplitude. With our in operando cryo-STEM experiments, we directly correlate the CDW structure with the device resistance, and show that dislocations significantly impact device performance. This work resolves fundamental questions of resistive switching in TaS$_2$ devices critical for engineering reliable and scalable TaS$_2$ electronics.

cond-mat.mtrl-sci↗

arXiv2022

Topological Metal MoP Nanowire for Interconnect

The increasing resistance of Cu interconnects for decreasing dimensions is a major challenge in continued downscaling of integrated circuits beyond the 7-nm technology node as it leads to unacceptable signal delays and power consumption in computing. The resistivity of Cu increases due to electron scattering at surfaces and grain boundaries of the interconnects at the nanoscale. Topological semimetals, owing to their topologically protected surface states and suppressed electron backscattering, are promising material candidates to potentially replace current Cu interconnects as low-resistance interconnects. Here, we report the attractive resistivity scaling of topological metal MoP nanowires and show that the resistivity values are comparable to those of Cu interconnects below 500 nm$^2$ cross-section areas. More importantly, we demonstrate that the dimensional scaling of MoP nanowires, in terms of line resistance versus total cross-sectional area, is superior to those of effective Cu and barrier-less Ru interconnects, suggesting MoP is an attractive solution to the current scaling challenge of Cu interconnects.

cond-mat.mtrl-sci↗

arXiv2022

A Gapped Phase in Semimetallic T$_{d}$-WTe$_{2}$ Induced by Lithium Intercalation

The Weyl semimetal WTe$_{2}$ has shown several correlated electronic behaviors, such as the quantum spin Hall effect, superconductivity, ferroelectricity, and a possible exciton insulator state, all of which can be tuned by various physical and chemical approaches. Here, we discover a new electronic phase in WTe$_{2}$ induced by lithium intercalation. The new phase exhibits an increasing resistivity with decreasing temperature and its carrier density is almost two orders of magnitude lower than the carrier density of the semi-metallic T$_{d}$ phase, probed by in situ Hall measurements as a function of lithium intercalation. Our theoretical calculations predict the new lithiated phase to be a charge density wave (CDW) phase with a bandgap of ~ 0.14 eV, in good agreement with the in situ transport data. The new phase is structurally distinct from the initial T$_{d}$ phase, characterized by polarization angle-dependent Raman spectroscopy, and large lattice distortions close to 6 % are predicted in the new phase. Thus, we report the first experimental evidence of CDW in T$_{d}$-WTe$_{2}$, projecting WTe$_{2}$ as a new playground for studying the interplay between CDW and superconductivity. Our finding of a new gapped phase in a two-dimensional (2D) semi-metal also demonstrates electrochemical intercalation as a powerful tuning knob for modulating electron density and phase stability in 2D materials.

cond-mat.mtrl-sci↗

arXiv2021

Axial Higgs Mode Detected by Quantum Pathway Interference in RTe3

The observation of the Higgs boson solidified the standard model of particle physics. However, explanations of anomalies (e.g. dark matter) rely on further symmetry breaking calling for an undiscovered axial Higgs mode. In condensed matter the Higgs was seen in magnetic, superconducting and charge density wave(CDW) systems. Uncovering a low energy mode's vector properties is challenging, requiring going beyond typical spectroscopic or scattering techniques. Here, we discover an axial Higgs mode in the CDW system RTe3 using the interference of quantum pathways. In RTe3 (R=La,Gd), the electronic ordering couples bands of equal or different angular momenta. As such, the Raman scattering tensor associated to the Higgs mode contains both symmetric and antisymmetric components, which can be excited via two distinct, but degenerate pathways. This leads to constructive or destructive interference of these pathways, depending on the choice of the incident and Raman scattered light polarization. The qualitative behavior of the Raman spectra is well-captured by an appropriate tight-binding model including an axial Higgs mode. The elucidation of the antisymmetric component provides direct evidence that the Higgs mode contains an axial vector representation (i.e. a pseudo-angular momentum) and hints the CDW in RTe3 is unconventional. Thus we provide a means for measuring collective modes quantum properties without resorting to extreme experimental conditions.

physics.optics↗

arXiv2021

Effects of Steric Factors on Molecular Doping to MoS$_2$

Surface functionalization of two-dimensional (2D) materials with organic electron donors (OEDs) is a powerful method to modulate the electronic properties of the material. However, our fundamental understanding of the doping mechanism is largely limited to the categorization of molecular dopants as n- or p-type based on the relative position of the molecule's redox potential in relation to the Fermi level of the 2D host. Our limited knowledge about the impact of factors other than the redox properties of the molecule on doping makes it challenging to controllably use molecules to dope 2D materials and design new OEDs. Here, we functionalize monolayer MoS$_2$ using two molecular dopants, Me- and $^t$Bu-OED, which have the same redox potential but different steric properties to probe the effects of molecular size on the doping level of MoS$_2$. We show that, for the same functionalization conditions, the doping powers of Me- and $^t$Bu-OED are 0.22 - 0.44 and 0.11 electrons per molecule, respectively, demonstrating that the steric properties of the molecule critically affect doping levels. Using the stronger dopant, Me-OED, a carrier density of 1.10 +/- 0.37 x 10$^{14}$ cm$^{-2}$ is achieved in MoS$_2$, the highest doping level to date for MoS$_2$ using surface functionalization. Overall, we establish that tuning of the steric properties of the dopant is essential in the rational design of molecular dopants.

cond-mat.mtrl-sci↗