arXiv subjects

Jukka Viheriälä

Publications and source records attributed to Jukka Viheriälä.

4 recordsLinked to original sources

arXiv2026

Low optical loss electrical isolation for multi-section monolithic GaSb-based photonic circuits

Monolithic photonic integrated circuits (PICs) platforms exploiting III-V materials combine passive and active waveguide structures in multi-section optoelectronic device architectures. Their operation requires high electrical isolation between adjacent functional sections without compromising the optical signal. This fundamental requirement is addressed for GaSb-based waveguides, which are known to exhibit high conductivity of p-type layers reducing the electrical isolation capability. To this end, a co-designed electrical-optical isolation strategy based on using deeply etched strip waveguides combined with adiabatic ridge-to-strip waveguide tapers in GaSb-based multiple-quantum-well heterostructures is proposed. While deep etching alone enables isolation resistances of up to 40 k-ohm, it severely degrades optical propagation. By introducing optimized adiabatic tapers, we demonstrate good optical performance as single-mode continuous-wave lasing in a two-section device with integrated absorber, while maintaining an isolation resistance of 17.3 k-ohm; this corresponds to an approximately 17-fold improvement over previously reported GaSb two-section devices. The approach establishes a critical building block for the development of monolithic GaSb-based PICs operating above 2 um.

physics.optics↗

arXiv2026

Infrared photonics for healthcare: A roadmap for proactive and predictive health management

The field of infrared (IR) photonics is currently undergoing remarkable progress, moving rapidly towards practical sensing applications demanded by medical therapy and diagnostics (theranostics). The Developments can be divided into three main categories: (i) novel devices and measurement concepts including advanced updates of classical approaches that push medical sensing into the spotlight; (ii) new demonstrations of photonic integrated circuit (PIC-)based IR devices enabling highly miniaturized sensors for point-of-care application as well as medical and wellness wearables; and (iii) technologically-mature IR demonstrators that enable first medical sensing and treatment applications. This roadmap paper provides a consolidated overview of this highly dynamic and interdisciplinary research field with a focus on the major roadblocks that limit the widespread adoption of IR photonics in large-scale medical diagnostics. Special attention is given to the ambivalence between the molecular-level spectroscopic interpretation and a broader health-state assessment, highlighting the need for a common framework. Additionally, the paper discusses the critical importance of unified measurement standards, calibration protocols, and medical certification processes to ensure the validity of experimental results, reproducibility, and clinical trust, particularly when novel experimental techniques and AI algorithms are involved. Perspectives from major past and current contributors to application-oriented IR photonics will be provided.

physics.app-ph↗

arXiv2024

Micro-transfer printing of GaSb optoelectronics chips for mid-infrared silicon photonics integrated circuits

3D integration of GaSb-based gain chips on a silicon photonics platform using micro-transfer printing is demonstrated for the first time. The release process of GaSb coupons, and their transfer for the demonstration of hybrid GaSb/Silicon-photonics on-chip external cavity lasers is reported. A methodology to evaluate the key features of the gain chip coupons, namely the quality of the etched facets and the facet coating deposited using a wafer-level process, is introduced. The characterization provides insight into the fabrication factors limiting the performance of the gain coupons. The level of performance achieved for the transfer printing process offers a solid landmark for the development of photonics integration technology operating at the 2-3 $μ$m wavelength range. This is instrumental for the deployment of mid-IR photonic integration technology in emerging applications related to gas and biomarker sensing.

physics.app-ph↗

arXiv2024

InP optical amplifiers with Euler U-bend waveguide geometry for low-loss flip-chip hybrid integration

We report on the development of InP-based semiconductor amplifiers with a U-bend waveguide geometry having the input and output ports on one facet only. This waveguide geometry simplifies the chip alignment during the hybrid integration on silicon photonics platforms ultimately reducing the coupling losses, improving the integration yield, and minimizing the length of the optoelectronic chip. To achieve low loss U-bends with small footprint, we utilize the Euler bend geometry previously demonstrated on silicon and GaAs platforms. We analyze the gain properties of the devices by operating them as laser diodes at room temperature. Low loss U-bend performance with a 0.56 dB for a 50 $μ$m effective bending radius bend in a single-mode strip InP waveguide is demonstrated. The interface between bend and straight waveguides was studied by comparing deep etched waveguides to a combination of shallow straight waveguides and deep etched bends. The effects of this interface on the device losses, electric properties and spectrum are reported. The implications related to having a bend section on the carrier injection and gain are discussed. Finally, results on the integration trials on silicon-on-insulator platform are presented.

physics.app-ph↗