arXiv subjects

Julia Stähler

Publications and source records attributed to Julia Stähler.

14 recordsLinked to original sources

arXiv2026

Time-resolved SNOM via phase-domain sampling

Time-resolved scanning near-field optical microscopy (tr-SNOM) enables the measurement of the dynamic optical response of functional surfaces beyond the diffraction limit. Experimental challenges are imposed both by the use of a pulsed light source, and by the need for interferometric signal modulation to isolate the near-field contribution. We present a novel experimental approach to retrieve the tr-SNOM signal using a 200 kHz laser system and pseudo-heterodyne modulation. We circumvent the Nyquist limit for spectral demodulation by sampling modulation phases, pump intensity and SNOM signal for every laser shot. A general time-resolved SNOM signal is derived, independent of detection scheme or physical assumptions about the near-field enhancement, and is successfully measured and isolated on WS$_2$ monolayer and multilayer regions. We confirm localization by signal-distance curves, spatial confinement at material boundaries, and by identifying signal contributions at individual modulation harmonics. Disentangling the dynamic contributions enables us to extract the dynamic dielectric function of the sample. Showing the capability of phase-domain sampling paves the way to integration of more diverse and specialized light sources, growing the potential of optical ultrafast near-field measurements.

physics.optics↗

arXiv2026

Discontinuous character of the ultrafast exciton Mott transition in monolayer WS$_2$

There are conflicting predictions and reports on the character of the exciton Mott transition (EMT) in monolayer transition metal dichalcogenides. It could be either a discontinuous or a continuous transition from the excitonic to the plasma phase, with important implications for devices such as photoswitches. To resolve the nature of the transition in monolayer WS$_2$, we study its ultrafast optical response upon resonant photoexcitation of the A exciton across a broad range of photoexcitation densities. In agreement with previously reported measurements we observe that the A exciton quenches gradually with increasing excitation density. However, a detailed lineshape analysis unveils an abrupt red shift in the transient peak positions of the A and B exciton resonances above an excitation density threshold. This is attributed to band gap renormalization arising from the formation of free charge carrier plasma, i.e., the EMT. The plasma phase decays with a time constant of 0.65 ps back into the excitonic state. The abrupt appearance of the plasma phase at the threshold density suggests that the EMT is a discontinuous and not a continuous transition. This work demonstrates how transient optical spectroscopy combined with lineshape analysis of two excitonic resonances simultaneously can be used to investigate the EMT in 2D materials.

cond-mat.mtrl-sci↗

arXiv2024

Right On Time: Ultrafast Charge Separation Before Hybrid Exciton Formation

Organic/inorganic hybrid systems offer great potential for novel solar cell design combining the tunability of organic chromophore absorption properties with high charge carrier mobilities of inorganic semiconductors. However, often such material combinations do not show the expected performance: while ZnO, for example, basically exhibits all necessary properties for a successful application in light-harvesting, it was clearly outpaced by TiO$_2$ in terms of charge separation efficiency. The origin of this deficiency has long been debated. This study employs femtosecond time-resolved photoelectron spectroscopy and many-body ab initio calculations to identify and quantify all elementary steps leading to the suppression of charge separation at an exemplary organic/ZnO interface. We demonstrate that charge separation indeed occurs efficiently on ultrafast (350 fs) timescales, but that electrons are recaptured at the interface on a 100 ps timescale and subsequently trapped in a strongly bound (0.7 eV) hybrid exciton state with a lifetime exceeding 5 $μ$s. Thus, initially successful charge separation is followed by delayed electron capture at the interface, leading to apparently low charge separation efficiencies. This finding provides a sufficiently large timeframe for counter-measures in device design to successfully implement specifically ZnO and, moreover, invites material scientists to revisit charge separation in various kinds of previously discarded hybrid systems.

cond-mat.mtrl-sci↗

arXiv2023

Dynamic screening of quasiparticles in WS$_2$ monolayers

We unravel the influence of quasiparticle screening in the non-equilibrium exciton dynamics of monolayer WS$_2$. We report pump photon energy-dependent exciton blue and red-shifts from time-resolved-reflectance contrast measurements. Based on a phenomenological model, we isolate the effective impact of excitons and free carriers on the renormalization of the quasi-free particle band gap, exciton binding energy and linewidth broadening. By this, our work does not only provide a comprehensive picture of the competing phenomena governing the exciton dynamics in WS$_2$ upon photoexcitation, but also demonstrates that exciton and carrier contributions to dynamic screening of the Coulomb interaction differ significantly.

cond-mat.mes-hall↗

arXiv2023

$\mathrm{O_2}$ reduction at a DMSO/Cu(111) model battery interface

In order to develop a better understanding of electrochemical $\mathrm{O_2}$ reduction in non-aqueous solvents, we apply two-photon photoelectron spectroscopy to probe the dynamics of $\mathrm{O_2}$ reduction at a DMSO/Cu(111) model battery interface. By analyzing the temporal evolution of the photoemission signal, we observe the formation of $\mathrm{O_2^-}$ from a trapped electron state at the DMSO/vacuum interface. We find the vertical binding energy of $\mathrm{O_2^-}$ to be 3.80 $\pm$ 0.05 eV, in good agreement with previous results from electrochemical measurements, but with improved accuracy, potentially serving as a basis for future calculations on the kinetics of electron transfer at electrode interfaces. Modelling the $\mathrm{O_2}$ diffusion through the DMSO layer enables us to quantify the activation energy of diffusion (31 $\pm$ 6 meV), the diffusion constant (1 $\pm$ 1$\cdot 10^{-8}$ cm$^2$/s), and the reaction quenching distance for electron transfer to $\mathrm{O_2}$ in DMSO (12.4 $\pm$ 0.4 $\unicode{x212B}$), a critical value for evaluating possible mechanisms for electrochemical side reactions. These results ultimately will inform the development and optimization of metal-air batteries in non-aqueous solvents.

cond-mat.mtrl-sci↗

arXiv2022

Ultrafast charge carrier and exciton dynamics in an excitonic insulator probed by time-resolved photoemission spectroscopy

An excitonic insulator phase is expected to arise from the spontaneous formation of electron-hole pairs (excitons) in semiconductors where the exciton binding energy exceeds the size of the electronic band gap. At low temperature, these ground state excitons stabilize a new phase by condensing at lower energy than the electrons at the valence band top, thereby widening the electronic band gap. The envisioned opportunity to explore many-boson phenomena in an excitonic insulator system is triggering a very active debate on how ground state excitons can be experimentally evidenced. Here, we employ a nonequilibrium approach to spectrally disentangle the photoinduced dynamics of an exciton condensate from the entwined signature of the valence band electrons. By means of time-and angle-resolved photoemission spectroscopy of the occupied and unoccupied electronic states, we follow the complementary dynamics of conduction and valence band electrons in the photoexcited low-temperature phase of Ta2 NiSe5 , the hitherto most promising single-crystal candidate to undergo a semiconductor-to-excitonic-insulator phase transition. The photoexcited conduction electrons are found to relax within less than 1 ps. Their relaxation time is inversely proportional to their excess energy, a dependence that we attribute to the reduced screening of Coulomb interaction and the low dimensionality of Ta2NiSe5 . Long after (> 10 ps) the conduction band has emptied, the photoemission intensity below the Fermi energy has not fully recovered the equilibrium value. Notably, this seeming carrier imbalance cannot be rationalized simply by the relaxation of photoexcited electrons and holes across the semiconducting band gap. [...]

cond-mat.str-el↗

arXiv2021

Ultrafast generation and decay of a surface metal

Band bending at semiconductor surfaces induced by chemical doping or electric fields can create metallic surfaces with properties not found in the bulk, such as high electron mobility, magnetism or superconductivity. Optical generation of such metallic surfaces via BB on ultrafast timescales would facilitate a drastic manipulation of the conduction, magnetic and optical properties of semiconductors for high-speed electronics. Here, we demonstrate the ultrafast generation of a metal at the (10-10) surface of ZnO upon photoexcitation. Compared to hitherto known ultrafast photoinduced semiconductor-to-metal transitions that occur in the bulk of inorganic semiconductors, the metallization of the ZnO surface is launched by 3-4 orders of magnitude lower photon fluxes. Using time- and angle-resolved photoelectron spectroscopy, we show that the phase transition is caused by photoinduced downward surface band bending due to photodepletion of donor-type deep surface defects. At low photon flux, surface-confined excitons are formed. Above a critical exciton density, a Mott transition occurs, leading to a partially filled metallic band below the equilibrium Fermi energy. This process is in analogy to chemical doping of semiconductor surfaces. The discovered mechanism is not material-specific and presents a general route for controlling metallicity confined to semiconductor interfaces on ultrafast timescales.

cond-mat.mtrl-sci↗

arXiv2019

Photoexcited organic molecules $en~route$ to highly efficient autoionization

The conversion of optical and electrical energy in novel materials is key to modern optoelectronic and light-harvesting applications. Here, we investigate the equilibration dynamics of photoexcited 2,7-bis(biphenyl-4-yl)-2,7-ditertbutyl-9,9-spirobiuorene (SP6) molecules adsorbed on ZnO(10-10) using femtosecond time-resolved two-photon photoelectron (2PPE) and optical spectroscopy. We find that, after initial ultrafast relaxation on fs and ps timescales, an optically dark state is populated, likely the SP6 triplet (T) state, that undergoes Dexter-type energy transfer ($r_{\mathrm{Dex}} = 1.3~\mathrm{nm}$) and exhibits a long decay time of 0.1 s. Because of this long lifetime a photostationary state with average T-T distances below 2 nm is established at excitation densities in the $10^{20}~\mathrm{cm}^{-2}~\mathrm{s}^{-1}$ range. This large density enables decay by T-T annihilation (TTA) mediating autoionization despite an extremely low TTA rate of $k_{\mathrm{TTA}} = 4.5~10^{-26}~\mathrm{m}^3~\mathrm{s}^{-1}$. The large external quantum efficiency of the autoionization process (up to 15 %) and photocurrent densities in the \mathrm{mA}~\mathrm{cm}^{-2}$ range offer great potential for light-harvesting applications.

cond-mat.mtrl-sci↗

arXiv2019

Impact of electron solvation on ice structures at the molecular scale

We determine the impact of electron solvation on D$_2$O structures adsorbed on Cu(111) with low temperature scanning tunneling microscopy, two-photon photoemission, and ab initio theory. UV photons generating solvated electrons lead not only to transient, but also to permanent structural changes through the rearrangement of individual molecules. The persistent changes occur near sites with a high density of dangling OH groups that facilitate electron solvation. We conclude that energy dissipation during solvation triggers permanent molecular rearrangement via vibrational excitation.

cond-mat.mtrl-sci↗

arXiv2019

Revealing the Competing Contributions of Charge Carriers, Excitons, and Defects to the Non-Equilibrium Optical Properties of ZnO

Due to its wide band gap and high carrier mobility, ZnO is an attractive material for light-harvesting and optoelectronic applications. Its functional efficiency, however, is strongly affected by defect-related in-gap states that open up extrinsic decay channels and modify relaxation timescales. As a consequence, almost every ZnO sample behaves differently, leading to irreproducible or even contradicting observations. Here, a complementary set of time-resolved spectroscopies is applied to two ZnO samples of different defect density to disentangle the competing contributions of charge carriers, excitons, and defects to the non-equilibrium dynamics after photoexcitation: Time-resolved photoluminescence, excited state transmission, and electronic sum frequency generation. Remarkably, defects affect the transient optical properties of ZnO across more than eight orders of magnitude in time, starting with photodepletion of normally occupied defect states on femtosecond timescales, followed by the competition of free exciton emission and exciton trapping at defect sites within picoseconds, photoluminescence of defect-bound and free excitons on nanosecond timescales, and deeply trapped holes with microsecond lifetimes. These findings do not only provide the first comprehensive picture of charge and exciton relaxation pathways in ZnO, but also uncover the microscopic origin of previous conflicting observations in this challenging material and thereby offer means of overcoming its difficulties.

cond-mat.mtrl-sci↗

arXiv2018

Inhibition of the photoinduced structural phase transition in the excitonic insulator Ta$_2$NiSe$_5$

Femtosecond time-resolved mid-infrared reflectivity is used to investigate the electron and phonon dynamics occurring at the direct band gap of the excitonic insulator Ta$_2$NiSe$_5$ below the critical temperature of its structural phase transition. We find that the phonon dynamics show a strong coupling to the excitation of free carriers at the Γ point of the Brillouin zone. The optical response saturates at a critical excitation fluence $F_C = 0.30~\pm~0.08$~mJ/cm$^2$ due to optical absorption saturation. This limits the optical excitation density in Ta$_2$NiSe$_5$ so that the system cannot be pumped sufficiently strongly to undergo the structural change to the high-temperature phase. We thereby demonstrate that Ta$_2$NiSe$_5$ exhibits a blocking mechanism when pumped in the near-infrared regime, preventing a nonthermal structural phase transition.

cond-mat.str-el↗

arXiv2017

Ultrafast Electronic Band Gap Control in an Excitonic Insulator

We report on the nonequilibrium dynamics of the electronic structure of the layered semiconductor Ta$_2$NiSe$_5$ investigated by time- and angle-resolved photoelectron spectroscopy. We show that below the critical excitation density of $F_{C} = 0.2$ mJ cm$^{-2}$, the band gap $narrows$ transiently, while it is $enhanced$ above $F_{C}$. Hartree-Fock calculations reveal that this effect can be explained by the presence of the low-temperature excitonic insulator phase of Ta$_2$NiSe$_5$, whose order parameter is connected to the gap size. This work demonstrates the ability to manipulate the band gap of Ta$_2$NiSe$_5$ with light on the femtosecond time scale.

cond-mat.str-el↗

arXiv2016

Localization-dependent charge separation efficiency at an organic/inorganic hybrid interface

By combining complementary optical techniques, photoluminescence and time-resolved excited state absorption, we achieve a comprehensive picture of the relaxation processes in the organic/inorganic hybrid system SP6/ZnO. We identify two long-lived excited states of the organic molecules of which only the lowest energy one, localized on the sexiphenyl backbone of the molecule, is found to efficiently charge separate to the ZnO conduction band or radiatively recombine. The other state, most likely localized on the spiro-linked biphenyl, relaxes only by intersystem crossing to a long-lived, probably triplet state, thus acting as a sink of the excitation and limiting the charge separation efficiency.

cond-mat.mtrl-sci↗

arXiv2014

Instantaneous band gap collapse in photoexcited monoclinic VO$_2$ due to photocarrier doping

Using femtosecond time-resolved photoelectron spectroscopy we demonstrate that photoexcitation transforms monoclinic VO$_2$ quasi-instantaneously into a metal. Thereby, we exclude an 80 femtosecond structural bottleneck for the photoinduced electronic phase transition of VO$_2$. First-principles many-body perturbation theory calculations reveal a high sensitivity of the VO$_2$ bandgap to variations of the dynamically screened Coulomb interaction, supporting a fully electronically driven isostructral insulator-to-metal transition. We thus conclude that the ultrafast band structure renormalization is caused by photoexcitation of carriers from localized V 3d valence states, strongly changing the screening \emph{before} significant hot-carrier relaxation or ionic motion has occurred.

cond-mat.str-el↗