arXiv subjects

Julie A. Borchers

Publications and source records attributed to Julie A. Borchers.

25 records · Page 2Linked to original sources

arXiv2018

Ionic Tuning of Cobaltites at the Nanoscale

Control of materials through custom design of ionic distributions represents a powerful new approach to develop future technologies ranging from spintronic logic and memory devices to energy storage. Perovskites have shown particular promise for ionic devices due to their high ion mobility and sensitivity to chemical stoichiometry. In this work, we demonstrate a solid-state approach to control of ionic distributions in (La,Sr)CoO$_{3}$ thin films. Depositing a Gd capping layer on the perovskite film, oxygen is controllably extracted from the structure, up-to 0.5 O/u.c. throughout the entire 36 nm thickness. Commensurate with the oxygen extraction, the Co valence state and saturation magnetization show a smooth continuous variation. In contrast, magnetoresistance measurements show no-change in the magnetic anisotropy and a rapid increase in the resistivity over the same range of oxygen stoichiometry. These results suggest significant phase separation, with metallic ferromagnetic regions and oxygen-deficient, insulating, non-ferromagnetic regions, forming percolated networks. Indeed, X-ray diffraction identifies oxygen-vacancy ordering, including transformation to a brownmillerite crystal structure. The unexpected transformation to the brownmillerite phase at ambient temperature is further confirmed by high-resolution scanning transmission electron microscopy which shows significant structural - and correspondingly chemical - phase separation. This work demonstrates room-temperature ionic control of magnetism, electrical resistivity, and crystalline structure in a 36 nm thick film, presenting new opportunities for ionic devices that leverage multiple material functionalities.

cond-mat.mtrl-sci↗

arXiv2017

Structural and Magnetic Phase Transitions in Chromium Nitride Thin Films Grown by RF Nitrogen Plasma Molecular Beam Epitaxy

A magneto-structural phase transition is investigated in single crystal CrN thin films grown by rf plasma molecular beam epitaxy on MgO(001) substrates. While still within the vacuum environment following MBE growth, $\it in-situ$ low-temperature scanning tunneling microscopy, and $\it in-situ$ variable low-temperature reflection high energy electron diffraction are applied, revealing an atomically smooth and metallic CrN(001) surface, and an $\it in-plane$ structural transition from 1$\times$1 (primitive CrN unit cell) to $\mathrm{\sqrt{2}\times\sqrt{2}-R45^\circ}$ with a transition temperature of $\sim$ 278 K, respectively. $\it Ex-situ$ temperature dependent measurements are also performed, including x-ray diffraction and neutron diffraction, looking at the structural peaks and likewise revealing a first-order structural transition along both [001] and [111] $\it out-of-plane$ directions, with transition temperatures of 256 K and 268 K, respectively. Turning to the magnetic peaks, neutron diffraction confirms a clear magnetic transition from paramagnetic at room temperature to antiferromagnetic at low temperatures with a sharp, first-order phase transition and a N$é$el temperature of 270 K or 280 K for two different films. In addition to the experimental measurements of structural and magnetic ordering, we also discuss results from first-principles theoretical calculations which explore various possible magneto-structural models.

cond-mat.mtrl-sci↗

arXiv2016

Beyond the Interface Limit: Structural and Magnetic Depth Profiles of Voltage-Controlled Magneto-Ionic Heterostructures

Electric-field control of magnetism provides a promising route towards ultralow power information storage and sensor technologies. The effects of magneto-ionic motion have so far been prominently featured in the direct modification of interface chemical and physical characteristics. Here we demonstrate magnetoelectric coupling moderated by voltage-driven oxygen migration beyond the interface limit in relatively thick AlOx/GdOx/Co (15 nm) films. Oxygen migration and its ramifications on the Co magnetization are quantitatively mapped with polarized neutron reflectometry under thermal and electro-thermal conditionings. The depth-resolved profiles uniquely identify interfacial and bulk behaviors and a semi-reversible suppression and recovery of the magnetization. Magnetometry measurements show that the conditioning changes the microstructure so as to disrupt long-range ferromagnetic ordering, resulting in an additional magnetically soft phase. X-ray spectroscopy confirms electric field induced changes in the Co oxidation state but not in the Gd, suggesting that the GdOx transmits oxygen but does not source or sink it. These results together provide crucial insight into controlling magnetic heterostructures via magneto-ionic motion, not only at the interface, but also throughout the bulk of the films.

cond-mat.mes-hall↗

arXiv2016

Tailoring Exchange Couplings in Magnetic Topological Insulator/Antiferromagnet Heterostructures

Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures with Néel order in an antiferromagnetic CrSb and magnetic topological order in Cr-doped (Bi,Sb)2Te3, we realize emergent interfacial magnetic phenomena which can be tailored through artificial structural engineering. Through deliberate geometrical design of heterostructures and superlattices, we demonstrate the use of antiferromagnetic exchange coupling in manipulating the magnetic properties of the topological surface massive Dirac fermions. This work provides a new framework on integrating topological insulators with antiferromagnetic materials and unveils new avenues towards dissipationless topological antiferromagnetic spintronics.

cond-mat.mtrl-sci↗

arXiv2014

Magnetic Structure and Ordering of Multiferroic Hexagonal LuFeO3

We report on the magnetic structure and ordering of hexagonal LuFeO3 films grown by molecular-beam epitaxy (MBE) on YSZ (111) and Al2O3 (0001) substrates. Using a set of complementary probes including neutron diffraction, we find that the system magnetically orders into a ferromagnetically-canted antiferromagnetic state via a single transition between 138-155 K, while a paraelectric to ferroelectric transition occurs above 1000 K. The symmetry of the magnetic structure in the ferroelectric state implies that this material is a strong candidate for linear magnetoelectric coupling and control of the ferromagnetic moment directly by an electric field.

cond-mat.str-el↗

arXiv2014

Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films

We describe a detailed study of the structural, magnetic, and magneto-transport properties of single-crystal, n-type, Mn-doped Bi2Te3 thin films grown by molecular beam epitaxy. With increasing Mn concentration, the crystal structure changes from the tetradymite structure of the Bi2Te3 parent crystal at low Mn concentrations towards a BiTe phase in the (Bi2Te3)m(Bi2)n homologous series. Magnetization measurements reveal the onset of ferromagnetism with a Curie temperature in the range 13.8 K - 17 K in films with 2 % - 10 % Mn concentration. Magnetization hysteresis loops reveal that the magnetic easy axis is along the c-axis of the crystal (perpendicular to the plane). Polarized neutron reflectivity measurements of a 68 nm-thick sample show that the magnetization is uniform through the film. The presence of ferromagnetism is also manifest in a strong anomalous Hall effect and a hysteretic magnetoresistance arising from domain wall scattering. Ordinary Hall effect measurements show that the carrier density is n-type, increases with Mn doping, and is high enough (> 2.8 x 10^{13} cm^{-2}) to place the chemical potential in the conduction band. Thus, the observed ferromagnetism is likely associated with both bulk and surface states. Surprisingly, the Curie temperature does not show any clear dependence on the carrier density but does increase with Mn concentration. Our results suggest that the ferromagnetism probed in these Mn-doped Bi2Te3 films is not mediated by carriers in the conduction band or in an impurity band.

cond-mat.mtrl-sci↗

arXiv2008

Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures

We have studied magnetotransport in organic-inorganic hybrid multilayer junctions. In these devices, the organic semiconductor (OSC) Alq$_3$ (tris(8-hydroxyquinoline) aluminum) formed a spacer layer between ferromagnetic (FM) Co and Fe layers. The thickness of the Alq$_3$ layer was in the range of 50-150 nm. Positive magnetoresistance (MR) was observed at 4.2 K in a current perpendicular to plane geometry, and these effects persisted up to room temperature. The devices' microstructure was studied by X-ray reflectometry, Auger electron spectroscopy and polarized neutron reflectometry (PNR). The films show well-defined layers with modest average chemical roughness (3-5 nm) at the interface between the Alq$_3$ and the surrounding FM layers. Reflectometry shows that larger MR effects are associated with smaller FM/Alq$_3$ interface width (both chemical and magnetic) and a magnetically dead layer at the Alq$_3$/Fe interface. The PNR data also show that the Co layer, which was deposited on top of the Alq$_3$, adopts a multi-domain magnetic structure at low field and a perfect anti-parallel state is not obtained. The origins of the observed MR are discussed and attributed to spin coherent transport. A lower bound for the spin diffusion length in Alq$_3$ was estimated as $43 \pm 5$ nm at 80 K. However, the subtle correlations between microstructure and magnetotransport indicate the importance of interfacial effects in these systems.

cond-mat.mtrl-sci↗