arXiv subjects

Julien Jussot

Publications and source records attributed to Julien Jussot.

15 recordsLinked to original sources

arXiv2026

Valley enhanced Rabi frequency in n-type planar Silicon-MOS quantum dot

Electron spin resonance spectroscopy (ESR) of a single electron in planar Si-MOS quantum dot is reported in the vicinity of a valley level anti-crossing. A number of one and two-photon resonances are observed due to mixing of magnetic spin-flip and electric valley-flip transitions. This allows the reconstruction of the energy-level diagram of a four state system with two valley and two spin states. Near the anti-crossing, an enhancement of the Rabi frequency is observed. This is attributed to an electric-dipole transition activated by admixing of the upper energy level due to inter-valley spin coupling. The electric-dipole transition may be driven via capacitive coupling between the ESR antenna, and the confinement gate. To characterize spin-valley coupling responsible for the enhancement, we measure the anisotropy of the g-factor difference between the two valley states, the mean g-factor and the inter-valley spin coupling for both in and out-of-plane magnetic fields. The inter-valley spin coupling is strongly modulated by the direction of the B-field, and is strongest for out-of-plane B-field, consistent with an in-plane spin-valley field. In principle, this strong Electric dipole spin resonance (EDSR) effect could be utilized for fast all-electrical spin control in small-scale devices.

cond-mat.mes-hall↗

arXiv2026

Concatenated continuous driving of silicon qubit by amplitude and phase modulation

The rate of coherence loss is lower for a qubit under the Rabi drive than a freely evolving qubit $T_{2}^{\rm{Rabi}}>T_{2}^*$. Building on this principle, concatenated continuous driving (CCD) keeps the qubit under continuous drive to suppress noise and manipulate dressed states by either phase or amplitude modulation. In this work, we propose a variant of CCD which simultaneously modulates both the amplitude and phase of the driving field to generate a circularly polarized field in the rotating frame of the carrier frequency. This circular-modulated CCD(CMCCD) cancels the counter-rotating term in the second rotating frame, eliminating a systematic pulse-area error that arises from an imperfect rotating wave approximation for fast gates. Numerical simulations demonstrate that the proposed CMCCD achieves higher gate fidelity than conventional CCD schemes. We further implement and compare different CCD protocols using an electron spin-qubit in an isotopically purified $^{28}$Si-MOS quantum dot and evaluate its robustness by applying static detuning and Rabi frequency errors. The robustness is significantly improved compared with the standard Rabi drive, showing the effectiveness of this scheme for qubit arrays with variation in qubit frequency, coupling to the Rabi drive, and low-frequency noise. The proposed scheme can be applied to various physical systems, including trapped atoms, cold atoms, superconducting qubits, and NV centers.

quant-ph↗

arXiv2026

A current source with metrological precision made on a 300mm silicon MOS process

Although the measurement of current is now defined with respect to the electronic charge, producing a current standard based on a single-electron source remains challenging. The error rate of a source must be below 0.01 ppm, and many such sources must be operated in parallel to provide practically useful values of current in the nanoampere range. Achieving a single electron source using an industrial grade 300 mm wafer silicon metal oxide semiconductor (MOS) process could offer a powerful route for scaling, combined with the ability for integration with control and measurement electronics. Here, we present measurements of such a single-electron source indicating an error rate of 0.008 ppm, below the error threshold to satisfy the SI Ampere, and one of the lowest error rates reported, implemented using a gate-defined quantum dot device fabricated on an industry-grade silicon MOS process. Further evidence supporting the accuracy of the device is obtained by comparing the device performance to established models of quantum tunnelling, which reveal the mechanism of operation of our source at the single particle level. The low error rate observed in this device motivates the development of scaled arrays of parallel sources utilising Si MOS devices to realise a new generation of metrologically accurate current standards.

cond-mat.mes-hall↗

arXiv2025

Long coherence silicon spin qubit fabricated in a 300 mm industrial foundry

Silicon spin qubits offer long coherence times, a compact footprint and compatibility with industrial CMOS manufacturing. Here, we investigate spin qubits hosted in quantum dots fabricated in a state-of-the-art 300 mm nanoelectronics foundry and demonstrate substantially enhanced coherence, achieving a Hahn-echo time of $T_2^{\text{Hahn}} = 4\,\mathrm{ms}$ for singlet--triplet oscillations. Employing noise spectroscopy and noise correlation measurements, we identify detuning noise with an amplitude of $\delta \varepsilon_{\mathrm{rms}} = 2.2\,\mu\mathrm{eV}$ (integrated over 90 s) and observe strong zero-phase correlations between two spatially separated spin qubits. The singlet--triplet basis intrinsically rejects these common-mode fluctuations, yielding a pronounced suppression of dephasing. Our results suggest that exploiting the versatility of silicon quantum dots to adapt the qubit encoding to the microscopic noise landscape represents a promising strategy for advancing scalable quantum information processing.

cond-mat.mes-hall↗

arXiv2025

Eight-Qubit Operation of a 300 mm SiMOS Foundry-Fabricated Device

Silicon spin qubits are a promising platform for quantum computing due to their high coherence, controllability, and CMOS manufacturability, yet scalable implementations have so far been limited to a few qubits. Here, to take a step towards larger qubit systems, we tune and coherently control an eight-dot linear array of silicon spin qubits fabricated in a 300~mm CMOS-compatible foundry process, establishing operational scalability beyond the two-qubit regime. All eight qubits are successfully tuned and characterized as four double-dot pairs, exhibiting Ramsey dephasing times $T_2^*$ up to 41(2)$~\mu$s and Hahn-echo coherence times $T_2^{\mathrm{Hahn}}$ up to 1.31(4)$~$ms. Readout of the central four qubits is achieved via a cascaded charge-sensing protocol, enabling high-fidelity measurements of the entire multi-qubit array in a two step process. Additionally, we demonstrate a two-qubit gate operation between adjacent qubits with low phase noise. We show that silicon spin qubit arrays can be scaled to medium-sized arrays of 8 qubits while maintaining system coherence.

quant-ph↗

arXiv2025

High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer

We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using electron spin resonance. A relatively high optimal Rabi frequency of 5 MHz is achieved, dynamically decoupling the electron spin from its 29-Si environment. Tracking the qubit frequency reduces the impact of low frequency noise in the qubit frequency and improves the $T^{Rabi}$ from 7 to 11 $\mu$s at a Rabi frequency of 5 MHz, resulting in Q-factors exceeding 50. Randomized benchmarking returns an average single gate control fidelity of 99.5 $\pm$ 0.3%. As a result of pulse-area calibration, this fidelity is limited by the Rabi Q-factor. These results show that a fast Rabi frequency, low charge noise, and a feedback protocol enable high fidelity in these Si-MOS devices, despite the low-frequency magnetic noise.

cond-mat.mes-hall↗

arXiv2025

Multimode RF Reflectometry for Spin Qubit Readout and Device Characterization

We introduce a multimode superconducting inductor architecture that enables radio-frequency reflectometry at multiple discrete frequencies up to 2 GHz, addressing limitations of conventional single-mode designs. The spiral inductor's distributed inter-turn capacitance yields distinct resonant modes with varied impedance-matching conditions. By probing a quantum dot across several modes, we extract tunneling rates over a broad frequency range and identify signatures of nearby charge defects. Using one of the higher-order modes, we demonstrate single-shot spin readout via a radio-frequency single-electron transistor (RF-SET), achieving singlet-triplet readout with an integration time of 8 us and a readout fidelity of 98%. These results establish multimode inductance as a scalable and flexible component for fast spin-qubit readout and device-quality characterization.

cond-mat.mes-hall↗

arXiv2025

Hybrid Quantum Systems: Coupling Single-Molecule Magnet Qudits with Industrial Silicon Spin Qubits

Molecular spin qudits offer an attractive platform for quantum memory, combining long coherence times with rich multi-level spin structures. Terbium bis(phthalocyaninato) (TbPc$_2$) exemplifies such systems, with demonstrated quantum control and chemical reproducibility. In hybrid quantum architectures, TbPc$_2$ can act as the primary memory element, with semiconductor qubits providing scalable readout and coupling. Here we present a step toward such a hybrid system: using an industrially manufactured silicon metal-oxide-semiconductor (SiMOS) spin qubit to detect electronic spin transitions of an ensemble of TbPc$_2$ molecules. The readout is based on a compact and robust protocol that applies a microwave pulse while all gate voltages defining the qubit are held at a fixed operating point. This protocol, which combines simultaneous Rapid adiabatic Passage and Spin- Selective tunneling (RPSS), enables high-contrast resonance detection and avoids repeated $π$-pulse recalibration common in decoupling schemes. By demonstrating ensemble detection, we establish a foundation for integrating molecular quantum memories with industrial qubit platforms and mark an important step toward single-molecule hybrid quantum technologies.

cond-mat.mes-hall↗

arXiv2025

Rapid Autotuning of a SiGe Quantum Dot into the Single-Electron Regime with Machine Learning and RF-Reflectometry FPGA-Based Measurements

Spin qubits need to operate within a very precise voltage space around charge state transitions to achieve high-fidelity gates. However, the stability diagrams that allow the identification of the desired charge states are long to acquire. Moreover, the voltage space to search for the desired charge state increases quickly with the number of qubits. Therefore, faster stability diagram acquisitions are needed to scale up a spin qubit quantum processor. Currently, most methods focus on more efficient data sampling. Our approach shows a significant speedup by combining measurement speedup and a reduction in the number of measurements needed to tune a quantum dot device. Using an autotuning algorithm based on a neural network and faster measurements by harnessing the FPGA embedded in Keysight's Quantum Engineering Toolkit (QET), the measurement time of stability diagrams has been reduced by a factor of 9.8. This led to an acceleration factor of 2.2 for the total initialization time of a SiGe quantum dot into the single-electron regime, which is limited by the Python code execution.

cond-mat.mes-hall↗

arXiv2025

Precision high-speed quantum logic with holes on a natural silicon foundry platform

Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins in silicon offer compact all-electrical control, whilst retaining all the salient features of a quantum dot qubit architecture. However, silicon hole spin qubits are not as advanced as electrons, due to increased susceptibility to disorder and more complex spin physics. Here we demonstrate single-qubit gate fidelities up to 99.8% and a two-qubit gate quality factor of 240, indicating a physical fidelity limit of 99.7%. These results represent the highest performance reported in natural silicon to date, made possible by fast qubit control, exchange pulsing, and industrial-grade fabrication. Notably, we achieve these results in a near-identical device as used for highly reproducible, high-fidelity electron spin qubits. With isotopic purification and device-level optimisations in the future, our hole spin qubits are poised to unlock a new operation regime for quantum CMOS architectures.

cond-mat.mes-hall↗

arXiv2024

A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations

Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially viable quantum computing with potentially millions of qubits on a single chip. Here, we show precise qubit operation of a silicon two-qubit device made in a 300 mm semiconductor processing line. The key metrics including single- and two-qubit control fidelities exceed 99% and state preparation and measurement fidelity exceeds 99.9%, as evidenced by gate set tomography (GST). We report coherence and lifetimes up to $T_\mathrm{2}^{\mathrm{*}} = 30.4$ $\mu$s, $T_\mathrm{2}^{\mathrm{Hahn}} = 803$ $\mu$s, and $T_1 = 6.3$ s. Crucially, the dominant operational errors originate from residual nuclear spin carrying isotopes, solvable with further isotopic purification, rather than charge noise arising from the dielectric environment. Our results answer the longstanding question whether the favourable properties including high-fidelity operation and long coherence times can be preserved when transitioning from a tailored academic to an industrial semiconductor fabrication technology.

cond-mat.mes-hall↗

arXiv2024

Radiofrequency cascade readout of coupled spin qubits

Silicon spin qubits based on metal-oxide-semiconductor (MOS) technology are compatible with semiconductor manufacturing and offer a route to scalable quantum processing. However, spin readout typically relies on proximal charge sensors, which add architectural complexity and limit qubit connectivity. In situ dispersive readout techniques are more compact, which can alleviate these constraints, but exhibit limited sensitivity. Here we report a radiofrequency electron-cascade readout method that enhances the dispersive signal through alternating-current electron co-tunnelling. With this approach, we achieve an enhancement in signal-to-noise ratio of more than $35~$dB, leading to a minimum integration time of $7.6 \pm 0.2~\mu$s. We demonstrate singlet-triplet readout of two-electron spins in a natural silicon planar MOS quantum dot array, and coherent spin control using the exchange interaction, which forms the basis for entangling gates. We find dephasing times of up to $500~$ns and a gate quality factor that exceeds 10.

cond-mat.mes-hall↗

arXiv2022

Low charge noise quantum dots with industrial CMOS manufacturing

Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale uniformity and high device yield, but off the shelf transistor processes cannot be directly transferred to qubit structures due to the different designs and operation conditions. To therefore leverage the know-how of the micro-electronics industry, we customize a 300mm wafer fabrication line for silicon MOS qubit integration. With careful optimization and engineering of the MOS gate stack, we report stable and uniform quantum dot operation at the Si/SiOx interface at milli-Kelvin temperature. We extract the charge noise in different devices and under various operation conditions, demonstrating a record-low average noise level of 0.61 $μ$eV/${\sqrt{Hz}}$ at 1 Hz and even below 0.1 $μ$eV/${\sqrt{Hz}}$ for some devices and operating conditions. By statistical analysis of the charge noise with different operation and device parameters, we show that the noise source can indeed be well described by a two-level fluctuator model. This reproducible low noise level, in combination with uniform operation of our quantum dots, marks CMOS manufactured MOS spin qubits as a mature and highly scalable platform for high fidelity qubits.

cond-mat.mes-hall↗

arXiv2021

High mobility SiMOSFETs fabricated in a full 300mm CMOS process

The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the quality of the devices fabricated in a full CMOS process. We report a record mobility of 17'500 cm2/Vs with a sub-10 nm oxide thickness indicating a high quality interface, suitable for future qubit applications. We also study the influence of gate materials on the mobilities and discuss the underlying mechanisms, giving insight into further material optimization for large scale quantum processors.

cond-mat.mes-hall↗

arXiv2017

Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices

Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer torque. The electrical control of these devices paves the way to future spin logic devices based on domain wall (DW) motion. In particular, it is a significant step toward the realization of a majority gate, even though further downscaling may be required. To our knowledge, this is the first fabrication of a cross-shaped free layer shared by several perpendicular MTJs. The fabrication process can be generalized to any geometry and any number of MTJs. Thus, this framework can be applied to other spin logic concepts based on magnetic interconnect. Moreover, it allows exploration of spin dynamics for logic applications

physics.app-ph↗