SearcharxivSearch

arXiv subjects

Julien L. Colaux

Publications and source records attributed to Julien L. Colaux.

2 recordsLinked to original sources

Accurate experimental determination of Gallium K- and L3-shell XRF fundamental parameters

The fluorescence yield of the K- and L3-shell of gallium was determined using the radiometrically calibrated (reference-free) X-ray fluorescence instrumentation at the BESSY II synchrotron radiation facility. Simultaneous transmission and fluorescence signals from GaSe foils were obtained, resulting in K- and L3-shell fluorescence yield values consistent with existing database values(omega_Ga_K=0.515 +- 0.019, omega_Ga_L3=0.013 +- 0.001). For the first time, these standard combined uncertainties are obtained from a properly constructed Uncertainty Budget. These K-shell fluorescence yield values support Bambynek's semi-empirical compilation from 1972: these and other measurements yield a combined recommended value of omega_Ga_K=0.514 +- 0.010. Using the measured fluorescence yields together with production yields from reference Ga-implanted samples where the quantity of implanted Ga was determined at 1.3% traceable accuracy by Rutherford backscattering spectrometry, the K-shell and L3-subshell photoionization cross sections at selected incident photon energies were also determined and compared critically with the standard databases.

physics.atom-ph

Electrical properties of Bi-implanted amorphous chalcogenide films

The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the electron conductivity in GeTe implanted with Bi at a dose of 2x1016 cm-2. The enhanced conductivity is accompanied by defect accumulation in the films upon implantation as is inferred by using analysis of the space-charge limited current. The results indicate that native coordination defects in lone-pair semiconductors can be deactivated by means of ion implantation, and higher conductivity of the films stems from additional electrically active defects created by implantation of bismuth.

cond-mat.mtrl-sci