arXiv subjects

Juliette Plo

Publications and source records attributed to Juliette Plo.

3 recordsLinked to original sources

arXiv2026

In-situ Silicon Doped hBN by High-Temperature Molecular Beam Epitaxy Enables Single Photon Emission

Hexagonal boron nitride (hBN) has emerged as a leading host for optically active quantum defects. Yet introduction of specific impurity species other than carbon remains unexplored. Here, we demonstrate an in-situ silicon doping of hBN grown by high-temperature molecular beam epitaxy (HT-MBE). By systematically varying the growth temperature from 900 to 1390 {\deg}C under a constant silicon flux, we establish an optimal window for Si incorporation to host a diverse range of emitters from 430-750 nm at room temperature. By transferring silicon-doped hBN film on SiO$_2$ substrate, we verified that single photon emitter activity was sustained in the hBN, demonstrating compatibility with device integration. The plausible origins of the observed optical transitions were discussed, and several potential candidates were proposed. Our results demonstrate a step toward a comprehensive understanding of in-situ doping of hBN and its utilization for quantum photonic applications.

physics.optics↗

arXiv2024

Growth of hexagonal BN crystals by traveling-solvent floating zone

Large, high-purity single-crystals of hexagonal BN (h-BN) are essential for exploiting its many desirable and interesting properties. Here, we demonstrate via X-ray tomography, X-ray diffraction and scanning electron microscopy that h-BN crystals can be grown by traveling-solvent floating-zone (TSFZ). The diameters of grown boules range from 3 - 5 mm with lengths from 2 - 10 mm. Tomography indicates variable grain sizes within the boules, with the largest having areas of $\approx$ 1 mm $\times$ 2 mm and thickness $\approx$ 0.5 mm. Although the boules contain macroscale flux inclusions, the h-BN lattice itself is of high quality for samples grown under optimized conditions. The currently optimized growth procedure employs an Fe flux, moderate N$_2$ pressure ($P_{N2} \approx$ 6 bar), and a growth rate of 0.1 mm/h. Raman spectroscopy for an optimized sample gives an average linewidth of 7.7(2) cm$^{-1}$ for the E$_{\mathrm{2g}}$ intralayer mode at 1365.46(4) cm$^{-1}$ and 1.0(1) cm$^{-1}$ for the E$_{\mathrm{2g}}$ interlayer shear mode at 51.78(9) cm$^{-1}$. The corresponding photoluminescence spectrum shows sharp phonon-assisted free exciton peaks and minimal signal in the energy range corresponding to carbon-related defects ($E$ = 3.9 4.1 eV). Our work demonstrates the viability of growing h-BN by the TSFZ technique, thereby opening a new route towards larger, high-quality crystals and advancing the state of h-BN related research.

cond-mat.mtrl-sci↗

arXiv2024

Layer-by-layer connection for large area single crystal boron nitride multilayer films

Boron nitride (BN) is today considered as one of the most promising materials for many novel applications including bright single photon emission, deep UV opto-electronics, small sized solid-state neutron detector, and high-performance two-dimensional materials, etc. Despite the recent successful fabrication of large-area BN single-crystals (typically <= 5 atomic layers), the scalable growth of thicker single-crystalline BN films still constitutes a great challenge. In this work, we demonstrate an approach to grow large-area multilayer single-crystal BN films by chemical vapor deposition on face-centered cubic Fe-Ni (111) single crystal alloy thin films with different stoichiometric phases. We show that the BN growth is greatly tunable and improved by increasing the Fe content in single-crystal Fe-Ni (111). The formation of pyramid-shaped multilayer BN domains with aligned orientation enables a continuous connection following a layer-by-layer, 'first-meet-first-connect', mosaic stitching mechanism. By means of selected area electron diffraction, micro-photoluminescence spectroscopy in the deep UV and high-resolution transmission electron microscopy, the layer-by-layer connection mechanism is unambiguously evidenced, and the stacking order has been verified to occur as unidirectional AB and ABC stackings, i.e., in the Bernal and rhombohedral BN phase.

cond-mat.mtrl-sci↗