arXiv subjects

Julio Camarero

Publications and source records attributed to Julio Camarero.

At least 19 recordsLinked to original sources

arXiv2026

Emergent exchange bias in ultra-thin La0.67Sr0.33MnO3 films driven by ferro-antiferromagnetic phase coexistence

Ultra-thin La0.67Sr0.33MnO3 (LSMO) films are generally regarded as single-phase ferromagnets, yet their reduced dimensionality enhances the impact of oxygen stoichiometry and local structural distortions. Here we demonstrate that LSMO layers with thicknesses between 3 and 17 nm develop a robust and thickness-independent exchange bias (EB) despite the absence of an engineered ferromagnetic-antiferromagnetic (FM-AFM) interface. Angular magneto-optical Kerr effect measurements reveal a reproducible hysteresis-loop shift that reverses sign upon 180-degree rotation, confirming its intrinsic origin. X-ray photoelectron spectroscopy shows a thickness-independent Mn2+ fraction (about 20 percent), indicating the presence of oxygen-deficient reduced regions embedded within the Mn3+/Mn4+ ferromagnetic matrix. A simple interfacial-exchange model suggests that only a sub-percent fraction of antiferromagnetic (or frustrated spin-ice-like) regions is required to generate the observed EB. These results demonstrate that ultra-thin LSMO can spontaneously host internal FM-AFM interfaces driven by oxygen deficiency, revealing an emergent route to exchange bias in nominally single-phase manganite films.

cond-mat.mtrl-sci↗

arXiv2024

Giant and anisotropic enhancement of spin-charge conversion in double Rashba interface graphene-based quantum system

The ever-increasing demand for efficient data storage and processing has fueled the search for novel memory devices. Spintronics offers an alternative fast and efficient solution using spin-to-charge interconversion. In this work, we demonstrate a remarkable thirty-four-fold increase in spin-to-charge current conversion when incorporating a 2D epitaxial graphene monolayer between iron and platinum layers by exploring spin-pumping on-chip devices. Furthermore, we find that the spin conversion is also anisotropic. We attribute this enhancement and anisotropy to the asymmetric Rashba contributions driven by an unbalanced spin accumulation at the differently hybridized top and bottom graphene interfaces, as highlighted by ad-hoc first-principles theory. The improvement in spin-to-charge conversion as well as its anisotropy reveals the importance of interfaces in hybrid 2D-thin film systems opening up new possibilities for engineering spin conversion in 2D materials, leading to potential advances in memory, logic applications, or unconventional computing.

cond-mat.mes-hall↗

arXiv2023

Isotropic spin and inverse spin Hall effect in epitaxial (111)-oriented Pt/Co bilayers

The spin-to-charge current interconversion in bilayers composed of ferromagnetic and nonmagnetic layers with strong spin-orbit coupling has garnered considerable attention due to its exceptional potential in advancing spintronics devices for data storage and logic applications. Platinum (Pt) stands out as one of the most effective materials for generating spin current. While the spin conversion efficiency is isotropic in polycrystalline Pt samples, an ongoing debate persists regarding its dependence on the crystalline direction in single crystalline samples. In this study, we aim to comprehensively evaluate the in-plane anisotropy of spin-charge interconversion using an array of complementary Spin Hall and inverse Spin Hall techniques with both incoherent and coherent excitation. Specifically, we investigate the spin-to-charge interconversion in epitaxial, (111)-oriented, Co/Pt bilayers with low surface roughness, as resulted from x-ray experiments. By varying the thickness of the Pt layer, we gain insights into the spin-charge interconversion in epitaxial Pt and highlight the effects of the interfaces. Our results demonstrate an isotropic behavior within the limits of our detection uncertainty. This finding significantly enhances our understanding of spin conversion in one of the most relevant systems in spintronics and paves the way for future research in this field.

cond-mat.mtrl-sci↗

arXiv2023

Rashba-like spin textures in Graphene promoted by ferromagnet-mediated Electronic-Hybridization with heavy metal

Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this goal requires the fundamental understanding of the microscopic origin of their unusual properties. Here, we elucidate the nature of the induced spin-orbit coupling (SOC) at Gr/Co interfaces on Ir. Through spin- and angle-resolved photoemission along with density functional theory, we show that the interaction of the HM with the C atomic layer via hybridization with the FM is the source of strong SOC in the Gr layer. Furthermore, our studies on ultrathin Co films underneath Gr reveal an energy splitting of $\sim$\,100 meV (negligible) for in-plane (out-of-plane) spin polarized Gr $π$ bands, consistent with a Rashba-SOC at the Gr/Co interface, which is either the fingerprint or the origin of the DMI. This mechanism vanishes at large Co thicknesses, where neither in-plane nor out-of-plane spin-orbit splitting is observed, indicating that Gr $π$ states are electronically decoupled from the HM. The present findings are important for future applications of Gr-based heterostructures in spintronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks

Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer deposition (ALD) of ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) directly on graphene (Gr)/Co/heavy metal (HM) epitaxial stacks is investigated via the implementation of several nucleation methods. With an in-situ method employing an Al$_2$O$_3$ layer, the HZO demonstrates a remanent polarization (2Pr) of 19.2 $μC/cm^2$. An ex-situ, naturally oxidized sputtered Ta layer for nucleation produces a film with 2Pr of 10.81 $μC/cm^2$, but a lower coercive field over the stack and switching enduring over subsequent cycles. Magnetic hysteresis measurements taken before and after ALD deposition show strong perpendicular magnetic anisotropy (PMA), with only slight deviations in the magnetic coercive fields due to the HZO deposition process, thus pointing to a good preservation of the single-layer Gr. X-ray diffraction measurements further confirm that the high-quality interfaces demonstrated in the stack remain unperturbed by the ferroelectric deposition and anneal.

cond-mat.mtrl-sci↗

arXiv2023

Experimental demonstration of a magnetically induced warping transition in a topological insulator mediated by rare-earth surface dopants

Magnetic topological insulators (MTI) constitute a novel class of materials where the topologically protected band structure coexists with long-range ferromagnetic order, which can lead to the breaking of time-reversal symmetry (TRS), introducing a bandgap in the Dirac cone-shaped topological surface state (TSS). The gap opening in MITs has been predicted to be accompanied by a distortion in the TSS, evolving its warped shape from hexagonal to trigonal. In this work, we demonstrate such a transition by means of angle-resolved photoemission spectroscopy after the deposition of low concentrations of magnetic rare earths, namely Er and Dy, on the ternary three-dimensional prototypical topological insulator Bi$_2$Se$_2$Te. Signatures of the gap opening occurring as a consequence of the TRS breaking have also been observed, whose existence is supported by the observation of the aforementioned transition. Moreover, increasing the Er coverage results in a tunable p-type doping of the TSS. As a consequence, the Fermi level (E$_{\textrm{F}}$) of our Bi$_2$Se$_2$Te crystals can be gradually tuned towards the TSS Dirac point, and therefore to the magnetically induced bandgap; thus fulfilling two of the necessary prerequisites for the realization of the quantum anomalous Hall effect (QAHE) in this system. The experimental results are rationalized by a theoretical model where a magnetic Zeeman out-of-plane term is introduced in the hamiltonian governing the TSS band dispersion. Our results offer new strategies to control magnetic interactions with TSSs based on a simple approach and open up viable routes for the realization of the QAHE.

cond-mat.mes-hall↗

arXiv2021

Direct X-ray detection of the spin Hall effect in CuBi

The spin Hall effect and its inverse are important spin-charge conversion mechanisms. The direct spin Hall effect induces a surface spin accumulation from a transverse charge current due to spin orbit coupling even in non-magnetic conductors. However, most detection schemes involve additional interfaces, leading to large scattering in reported data. Here we perform interface free x-ray spectroscopy measurements at the Cu L_{3,2} absorption edges of highly Bi-doped Cu (Cu_{95}Bi_{5}). The detected X-ray magnetic circular dichroism (XMCD) signal corresponds to an induced magnetic moment of (2.7 +/- 0.5) x 10-12 μ_{B} A^{-1} cm^{2} per Cu atom averaged over the probing depth, which is of the same order as for Pt measured by magneto-optics. The results highlight the importance of interface free measurements to assess material parameters and the potential of CuBi for spin-charge conversion applications.

cond-mat.mtrl-sci↗

arXiv2019

Intrinsic mixed Bloch-Néel character and chirality switch of skyrmions in asymmetric epitaxial trilayer

Recent advances on the stabilization and manipulation of chiral magnetization configurations in systems consisting in alternating atomic layers of ferromagnetic and non-magnetic materials hold promise of innovation in spintronics technology. The low dimensionality of the systems promotes spin orbit driven interfacial effects like antisymmetric Dzyaloshinskii-Moriya interactions (DMI) and surface magnetic anisotropy, whose relative strengths may be tuned to achieve stable nanometer sized magnetic objects with fixed chirality. While in most of the cases this is obtained by engineering complex multilayers stacks in which interlayer dipolar fields become important, we consider here a simple epitaxial trilayer in which a ferromagnet, with variable thickness, is embedded between a heavy metal and graphene. The latter enhances the perpendicular magnetic anisotropy of the system, promotes a Rashba-type DMI, and can sustain very long spin diffusion length. We use a layer-resolved micromagnetic model (LRM) to describe the magnetization textures and their chirality. Our results demonstrate that for Co thickness larger than 3.6 nm, a skyrmion having an intrinsic mixed Bloch-Néel character with counter-clock-wise chirality is stabilized in the entire (single) Co layer. Noteworthy, for thicknesses larger than 5.4 nm, the skyrmion switches its chirality, from counter-clock-wise to clock-wise.

cond-mat.mtrl-sci↗

arXiv2018

Engineering Large Anisotropic Magnetoresistance in La0.7Sr0.3MnO3 Films at Room Temperature

The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in materials depending on the specific system and measuring configuration. Half-metallic manganites hold promise for spintronic applications but the complexity of competing interactions has not permitted the understanding and control of their magnetotransport properties to enable the realization of their technological potential. Here we report on the ability to induce a dominant switchable magnetoresistance in La0.7Sr0.3MnO3 epitaxial films, at room temperature (RT). By engineering an extrinsic magnetic anisotropy, we show a large enhancement of anisotropic magnetoresistance (AMR) which leads to, at RT, signal changes much larger than the other contributions such as the colossal magnetoresistance (CMR). The dominant extrinsic AMR exhibits large variation in the resistance in low field region, showing high sensitivity to applied low magnetic fields. These findings have a strong impact on the real applications of manganite based devices for the high-resolution low field magnetic sensors or spintronics.

cond-mat.mtrl-sci↗

arXiv2018

Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications

Spintronics exploits the magnetoresistance effects to store or sense the magnetic information. Since the magnetoresistance strictly depends on the magnetic anisotropy of the system, it is fundamental to set a defined anisotropy to the system. Here, we investigate by means of vectorial Magneto-Optical Kerr Magnetometry (v-MOKE), half-metallic La0.67Sr0.33MnO3 (LSMO) thin films that exhibit at room temperature pure biaxial magnetic anisotropy if grown onto MgO (001) substrate with a thin SrTiO3 (STO) buffer. In this way, we can avoid unwanted uniaxial magnetic anisotropy contributions that may be detrimental for specific applications. The detailed study of the angular evolution of the magnetization reversal pathways, critical fields (coercivity and switching) allows for disclosing the origin of the magnetic anisotropy, which is magnetocrystalline in nature and shows four-fold symmetry at any temperature.

cond-mat.mtrl-sci↗

arXiv2018

Unravelling Dzyaloshinskii-Moriya interaction and chiral nature of Graphene/Cobalt interface

A major challenge for future spintronics is to develop suitable spin transport channels with long spin lifetime and propagation length. Graphene can meet these requirements, even at room temperature. On the other side, taking advantage of the fast motion of chiral textures, i.e., Néel-type domain walls and magnetic skyrmions, can satisfy the demands for high-density data storage, low power consumption and high processing speed. We have engineered epitaxial structures where an epitaxial ferromagnetic Co layer is sandwiched between an epitaxial Pt(111) buffer grown in turn onto MgO(111) substrates and a graphene layer. We provide evidence of a graphene-induced enhancement of the perpendicular magnetic anisotropy up to 4 nm thick Co films, and of the existence of chiral left-handed Néel-type domain walls stabilized by the effective Dzyaloshinskii-Moriya interaction (DMI) in the stack. The experiments show evidence of a sizeable DMI at the gr/Co interface, which is described in terms of a conduction electron mediated Rashba-DMI mechanism and points opposite to the Spin Orbit Coupling-induced DMI at the Co/Pt interface. In addition, the presence of graphene results in: i) a surfactant action for the Co growth, producing an intercalated, flat, highly perfect fcc film, pseudomorphic with Pt and ii) an efficient protection from oxidation. The magnetic chiral texture is stable at room temperature and grown on insulating substrate. Our findings open new routes to control chiral spin structures using interfacial engineering in graphene-based systems for future spin-orbitronics devices fully integrated on oxide substrates.

cond-mat.mtrl-sci↗

arXiv2017

Tuning domain wall velocity with Dzyaloshinskii-Moriya interaction

We have studied a series of Pt/Co/M epitaxial trilayers, in which Co is sandwiched between Pt and a non magnetic layer M (Pt, Ir, Cu, Al). Using polar magneto-optical Kerr microscopy, we show that the field- induced domain wall speeds are strongly dependent on the nature of the top layer, they increase going from M=Pt to lighter top metallic overlayers, and can reach several 100 m/s for Pt/Co/Al. The DW dynamics is consistent with the presence of chiral Néel walls stabilized by interfacial Dzyaloshinskii-Moriya interaction (DMI) whose strength increases going from Pt to Al top layers. This is explained by the presence of DMI with opposite sign at the Pt/Co and Co/M interfaces, the latter increasing in strength going towards heavier atoms, possibly due to the increasing spin-orbit interaction. This work shows that in non-centrosymmetric trilayers the domain wall dynamics can be finely tuned by engineering the DMI strength, in view of efficient devices for logic and spitronics applications.

cond-mat.mtrl-sci↗

arXiv2013

Room Temperature In-plane <100> Magnetic Easy Axis for Fe3O4/SrTiO3(001):Nb Grown by Infrared PLD

We examine the magnetic easy-axis directions of stoichiometric magnetite films grown on SrTiO3:Nb by infrared pulsed-laser deposition. Spin-polarized low-energy electron microscopy reveals that the individual magnetic domains are magnetized along the in-plane <100> film directions. Magneto-optical Kerr effect measurements show that the maxima of the remanence and coercivity are also along in-plane <100> film directions. This easy-axis orientation differs from bulk magnetite and films prepared by other techniques, establishing that the magnetic anisotropy can be tuned by film growth.

cond-mat.mtrl-sci↗

arXiv2011

Direct observation of Oersted-field-induced magnetization dynamics in magnetic nanostripes

We have used time-resolved x-ray photoemission electron microscopy to investigate the magnetization dynamics induced by nanosecond current pulses in NiFe/Cu/Co nanostripes. A large tilt of the NiFe magnetization in the direction transverse to the stripe is observed during the pulses. We show that this effect cannot be quantitatively understood from the amplitude of the Oersted field and the shape anisotropy. High frequency oscillations observed at the onset of the pulses are attributed to precessional motion of the NiFe magnetization about the effective field. We discuss the possible origins of the large magnetization tilt and the potential implications of the static and dynamic effects of the Oersted field on current-induced domain wall motion in such stripes.

cond-mat.mtrl-sci↗

arXiv2009

High domain wall velocity at zero magnetic field induced by low current densities in spin-valve nanostripes

Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below $10^{12} \unit{A/m^2}$, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities.

cond-mat.mtrl-sci↗

arXiv2007

Layer-resolved imaging of domain wall interactions in magnetic tunnel junction-like trilayers

We have performed a layer-resolved, microscopic study of interactions between domain walls in two magnetic layers separated by a non-magnetic one, using high-resolution x-ray photoemission electron microscopy. Domain walls in the hard magnetic Co layer of a Co/Al2O3/FeNi trilayer with in-plane uniaxial anisotropy strongly modify the local magnetization direction in the soft magnetic FeNi layer. The stray fields associated to the domain walls lead to an antiparallel coupling between the local Co and FeNi moments. For domain walls parallel to the easy magnetization axis this interaction is limited to the domain wall region itself. For strongly charged (head-on or tail-to-tail) walls, the antiparallel coupling dominates the interaction over radial distances up to several micrometers from the centre of the domain wall.

cond-mat.other↗

arXiv2006

Influence of topography and Co domain walls on the magnetization reversal of the FeNi layer in FeNi/Al$\_2$O$\_3$/Co magnetic tunnel junctions

We have studied the magnetization reversal dynamics of FeNi/Al$\_2$O$\_3$/Co magnetic tunnel junctions deposited on step-bunched Si substrates using magneto-optical Kerr effect and time-resolved x-ray photoelectron emission microscopy combined with x-ray magnetic circular dichroism (XMCD-PEEM). Different reversal mechanisms have been found depending on the substrate miscut angle. Larger terraces (smaller miscut angles) lead to a higher nucleation density and stronger domain wall pinning. The width of domain walls with respect to the size of the terraces seems to play an important role in the reversal. We used the element selectivity of XMCD-PEEM to reveal the strong influence of the stray field of domain walls in the hard magnetic layer on the magnetic switching of the soft magnetic layer.

cond-mat.other↗

arXiv2006

Dynamics of magnetic domain wall motion after nucleation: Dependence on the wall energy

The dynamics of magnetic domain wall motion in the FeNi layer of a FeNi/Al2O3/Co trilayer has been investigated by a combination of x-ray magnetic circular dichroism, photoelectron emission microscopy, and a stroboscopic pump-probe technique. The nucleation of domains and subsequent expansion by domain wall motion in the FeNi layer during nanosecond-long magnetic field pulses was observed in the viscous regime up to the Walker limit field. We attribute an observed delay of domain expansion to the influence of the domain wall energy that acts against the domain expansion and that plays an important role when domains are small.

cond-mat.other↗