Breaking the mutual exclusivity between metallicity and ferroelectricity in a non-polar covalent semiconductor via orbital selective doping
The mutual exclusion of ferroelectricity and metallic conductivity is a long-standing tenet because itinerant electrons screen long-range Coulomb forces that stabilize the bulk polar order. Here, we break this paradigm by heavily doping a non-polar covalent semiconductor of cubic silicon carbide (3C-SiC) with nitrogen. This introduces heavy electron doping, inducing metallicity and driving a structural transition from the non-polar F-43m to the polar R3m symmetry via the pseudo-Jahn-Teller effect. Remarkably, we provide direct, atomic-scale visualization of about 180{\deg} polarization reversal under an external voltage bias in a ferroelectric metal. The strongly directional character of antibonding orbitals occupied by conduction electrons prevents them from screening the local Si-C polarization, resulting in the coexistence of metallicity and ferroelectricity. Ferroelectric tunnel junctions demonstrate nonvolatile memory properties with a well-defined high-resistance state (HRS) and low-resistance state (LRS), an ultrahigh response speed (~50 ns), an ultralow operating voltage (1 V), an endurance exceeding 85927 cycles, and a projected retention time of 100 years. Our results provide a novel strategy for pioneering ferroelectricity in a metal, a new ferroelectric metal platform for exploring exotic properties, and a ferroelectric device with high performance that meets the requirements for low consumption and high-speed non-volatile devices.