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Jun Jiao

Publications and source records attributed to Jun Jiao.

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The finite basis problem for matrix semirings $\mathbf{M}_n(S_7)$

We first prove that two matrix semirings $\mathbf{M}_n(S_1)$ and $\mathbf{M}_n(S_2)$ are equationally equivalent whenever additively idempotent semirings $S_1$ and $S_2$ are equationally equivalent. We then prove an embedding theorem for matrix semirings $\mathbf{M}_n(S)$ over an additively idempotent semiring $S$: for all $n \geq 2$, $\mathbf{M}_n(S)$ embeds into $\mathbf{M}_{n+1}(S)$. This yields an ascending chain of varieties $\mathsf{V}(\mathbf{M}_2(S)) \leq \mathsf{V}(\mathbf{M}_3(S)) \leq \cdots$, which is strictly ascending when $S$ is the two-element distributive lattice. Finally, we show that every variety in the interval $[\mathsf{V}(S_c(abc)), \mathsf{V}(\mathbf{M}_n(S_7))]$ is nonfinitely based (i.e., has no finite basis for its identities), where $S_c(abc)$ is an eight-element flat semiring and $S_7$ is the unique nonfinitely based three-element additively idempotent semiring. Consequently, $\mathbf{M}_n(S_7)$ is nonfinitely based, yielding an ascending chain $\mathsf{V}(\mathbf{M}_2(S_7)) \leq \mathsf{V}(\mathbf{M}_3(S_7)) \leq \cdots$; moreover, every variety in $[\mathsf{V}(S_7), \mathsf{V}(\mathbf{M}_n(S_7))]$ is also nonfinitely based, and this interval contains at least countably infinitely many distinct varieties.

math.RA

Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors

High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a "generalized" Cu doping by using randomly distributed Cu atoms along the channel and (ii) a "localized" Cu doping by adapting an ultrathin Cu layer at the metal-semiconductor interface. Compared to the pristine WS2 FETs, both the generalized Cu atomic dopant and localized Cu contact decoration can provide a Schottky-to-Ohmic contact transition owing to the reduced contact resistances by 1 - 3 orders of magnitude, and consequently elevate electron mobilities by 5 - 7 times higher. Our work demonstrates that the introduction of transition metal can be an efficient and reliable technique to enhance the carrier transport and device performance in 2D TMD FETs.

cond-mat.mtrl-sci