arXiv subjects

Jun Sung Kim

Publications and source records attributed to Jun Sung Kim.

54 records · Page 3Linked to original sources

arXiv2014

Transforming a Surface State of Topological Insulator by a Bi Capping Layer

We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong electron hybridization. These new states play the role of topological surface states keeping the bulk topological nature intact. This mechanism provides a way to create various different types of topologically protected electron channels on top of a single topological insulator, possibly with tailored properties for various applications.

cond-mat.mes-hall↗

arXiv2014

Persistent Topological Surface State at the Interface of Bi2Se3 Film Grown on Patterned Graphene

We employed graphene as a patternable template to protect the intrinsic surface states of thin films of topological insulators (TIs) from environment. Here we find that the graphene provides high-quality interface so that the Shubnikov de Haas (SdH) oscillation associated with a topological surface state could be observed at the interface of a metallic Bi2Se3 film with a carrier density higher than ~10^19 cm-3. Our in situ X-ray diffraction study shows that the Bi2Se3 film grows epitaxially in a quintuple layer-by-layer fashion from the bottom layer without any structural distortion by interfacial strain. The magnetotransport measurements including SdH oscillations stemming from multiple conductance channels reveal that the topological surface state, with the mobility as high as ~0.5 m^2/Vs, remains intact from the graphene underneath without degradation. Given that the graphene was prepatterned on arbitrary insulating substrates, the TI-based microelectronic design could be exploited. Our study thus provides a step forward to observe the topological surface states at the interface without degradation by tuning the interface between TI and graphene into a measurable current for device application.

cond-mat.mtrl-sci↗

arXiv2014

Controlling the 2DEG states evolution at a metal/Bi$_2$Se$_3$ interface

We have demonstrated that the evolution of the two-dimensional electron gas (2DEG) system at an interface of metal and the model topological insulator (TI) Bi$_2$Se$_3$ can be controlled by choosing an appropriate kind of metal elements and by applying a low temperature evaporation procedure. In particular, we have found that only topological surface states (TSSs) can exist at a Mn/Bi$_2$Se$_3$ interface, which would be useful for implementing an electric contact with surface current channels only. The existence of the TSSs alone at the interface was confirmed by angle-resolved photoemission spectroscopy (ARPES). Based on the ARPES and core-level x-ray photoemission spectroscopy measurements, we propose a cation intercalation model to explain our findings.

cond-mat.mtrl-sci↗

arXiv2014

Edge and Interfacial States in a 2D Topological Insulator:Bi(111) Bilayer on Bi$_{2}$Te$_{2}$Se

The electronic states of a single Bi(111) bilayer and its edges, suggested as a two dimensional topological insulator, are investigated by scanning tunneling spectroscopy (STS) and first-principles calculations. Well-ordered bilayer films and islands with zigzag edges are grown epitaxially on a cleaved Bi$_{2}$Te$_{2}$Se crystal. The calculation shows that the band gap of the Bi bilayer closes with a formation of a new but small hybridization gap due to the strong interaction between Bi and Bi$_{2}$Te$_{2}$Se. Nevertheless, the topological nature of the Bi bilayer and the topological edge state are preserved only with an energy shift. The edge-enhanced local density of states are identified and visualized clearly by STS in good agreement with the calculation. This can be the sign of the topological edge state, which corresponds to the quantum spin Hall state. The interfacial state between Bi and Bi$_{2}$Te$_{2}$Se is also identified inside the band gap region. This state also exhibits the edge modulation, which was previously interpreted as the evidence of the topological edge state [F. Yang et al., Phys. Rev. Lett. 109, 016801 (2012)].

cond-mat.mes-hall↗

arXiv2013

Microscopic mechanism for asymmetric charge distribution in Rashba-type surface states and the origin of the the energy splitting scale

Microscopic mechanism for the Rashba-type band splitting is examined in detail. We show how asymmetric charge distribution is formed when local orbital angular momentum (OAM) and crystal momentum get interlocked due to surface effects. An electrostatic energy term in the Hamiltonian appears when such OAM and crystal momentum dependent asymmetric charge distribution is placed in an electric field produced from an inversion symmetry breaking (ISB). Analysis by using an effective Hamiltonian shows that, as the atomic spin-orbit coupling (SOC) strength increases from weak to strong, originally OAM-quenched states evolve into well-defined chiral OAM states and then to total angular momentum J-states. In addition, the energy scale of the band splitting changes from atomic SOC energy to electrostatic energy. To confirm the validity of the model, we study OAM and spin structures of Au(111) system by using an effective Hamiltonian for the d-orbitals case. As for strong SOC regime, we choose Bi2Te2Se as a prototype system. We performed circular dichroism angle resolved photoemission spectroscopy experiments as well as first-principles calculations. We find that the effective model can explain various aspects of spin and OAM structures of the system.

cond-mat.mtrl-sci↗

arXiv2013

Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE

Topological insulators (TIs) are exotic materials which have topologically protected states on the surface due to the strong spin-orbit coupling. However, a lack of ordered growth of TI thin films on amorphous dielectrics and/or insulators presents a challenge for applications of TI-junctions. We report the growth of topological insulator Bi2Se3 thin films on amorphous SiO2 by molecular beam epitaxy (MBE). To achieve the ordered growth of Bi2Se3 on amorphous surface, the formation of other phases at the interface is suppressed by Se passivation. Structural characterizations reveal that Bi2Se3 films are grown along the [001] direction with a good periodicity by van der Waals epitaxy mechanism. Weak anti-localization effect of Bi2Se3 films grown on amorphous SiO2 shows modulated electrical property by the gating response. Our approach for ordered growth of Bi2Se3 on amorphous dielectric surface presents considerable advantages for TI-junctions with amorphous insulator or dielectric thin films.

cond-mat.mtrl-sci↗

arXiv2013

Spin-Chiral Bulk Fermi Surfaces of BiTeI Proven by Quantum Oscillations

We present the Fermi-surface map of the spin-chiral bulk states for the non-centrosymmetric semiconductor BiTeI using de Haas-van Alphen and Shubnikov-de Haas oscillations. We identify two distinct Fermi surfaces with a unique spindle-torus-type topology and the non-trivial Berry phases, confirming the spin chirality with oppositely circulating spin-texture. Near the quantum limit at high magnetic fields, we find a substantial Zeeman effect with an effective g-factor of ~ 60 for the Rashba-split Fermi surfaces. These findings provide clear evidence of strong Rashba and Zeeman coupling in the bulk states of BiTeI, suggesting that BiTeI is a good platform hosting the spin-polarized chiral states.

cond-mat.mtrl-sci↗

arXiv2013

Anisotropic Dirac electronic structures of AMnBi$_2$ (A=Sr, Ca)

Low energy electronic structures in AMnBi2 (A=alkaline earths) are investigated using a first-principles calculation and a tight binding method. An anisotropic Dirac dispersion is induced by the checkerboard arrangement of A atoms above and below the Bi square net in AMnBi2. SrMnBi2 and CaMnBi2 have a different kind of Dirac dispersion due to the different stacking of nearby A layers, where each Sr (Ca) of one side appears at the overlapped (alternate) position of the same element at the other side. Using the tight binding analysis, we reveal the chirality of the anisotropic Dirac electrons as well as the sizable spin-orbit coupling effect in the Bi square net. We suggest that the Bi square net provides a platform for the interplay between anisotropic Dirac electrons and the neighboring environment such as magnetism and structural changes.

cond-mat.mtrl-sci↗

arXiv2013

Quantum Oscillations of the Metallic Triangular-lattice Antiferromagnet PdCrO2

We report the de Haas-van Alphen (dHvA) oscillations and first-principle calculations for triangular antiferromagnet PdCrO2 showing unconventional anomalous Hall effect (AHE). The dHvA oscillations in PdCrO2 reveal presence of several 2 dimensional Fermi surfaces of smaller size than found in nonmagnetic PdCoO2. This evidences Fermi surface reconstruction due to the non-collinear 120 antiferromagnetic ordering of the localized Cr, consistent with the first principle calculations. The temperature dependence of dHvA oscillations shows no signature of additional modification of Cr spin structure below TN. Considering that the 120 helical ordering of Cr spins has a zero scalar spin chirality, our results suggest that PdCrO2 is a rare example of the metallic triangular antiferromagnets whose unconventional AHE can not be understood in terms of the spin chirality mechanism.

cond-mat.str-el↗

arXiv2012

Gate-tuned Differentiation of Surface-conducting States in Bi1.5Sb0.5Te1.7Se1.3 Topological-insulator Thin Crystals

Using field-angle, temperature, and back-gate-voltage dependence of the weak anti-localization (WAL) and universal conductance fluctuations of thin Bi1.5Sb0.5Te1.7Se1.3 topological-insulator single crystals, in combination with gate-tuned Hall resistivity measurements, we reliably separated the surface conduction of the topological nature from both the bulk conduction and topologically trivial surface conduction. We minimized the bulk conduction in the crystals and back-gate tuned the Fermi level to the topological bottom-surface band while keeping the top surface insensitive to back-gating with the optimal crystal thickness of ~?100 nm. We argue that the WAL effect occurring by the coherent diffusive motion of carriers in relatively low magnetic fields is more essential than other transport tools such as the Shubnikov-de Hass oscillations for confirming the conduction by the topologically protected surface state. Our approach provides a highly coherent picture of the surface transport properties of TIs and a reliable means of investigating the fundamental topological nature of surface conduction and possible quantum-device applications related to momentum-locked spin polarization in surface states.

cond-mat.mes-hall↗

arXiv2012

Breakdown of the interlayer coherence in twisted bilayer graphene

Coherent motion of the electrons in the Bloch states is one of the fundamental concepts of the charge conduction in solid state physics. In layered materials, however, such a condition often breaks down for the interlayer conduction, when the interlayer coupling is significantly reduced by e.g. large interlayer separation. We report that complete suppression of coherent conduction is realized even in an atomic length scale of layer separation in twisted bilayer graphene. The interlayer resistivity of twisted bilayer graphene is much higher than the c-axis resistivity of Bernal-stacked graphite, and exhibits strong dependence on temperature as well as on external electric fields. These results suggest that the graphene layers are significantly decoupled by rotation and incoherent conduction is a main transport channel between the layers of twisted bilayer graphene.

cond-mat.mes-hall↗

arXiv2011

Robust nodal superconductivity induced by isovalent doping in Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$ and BaFe$_2$(As$_{1-x}$P$_x$)$_2$

We present the ultra-low-temperature heat transport study of iron-based superconductors Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$ and BaFe$_2$(As$_{1-x}$P$_x$)$_2$. For optimally doped Ba(Fe$_{0.64}$Ru$_{0.36}$)$_2$As$_2$, a large residual linear term $κ_0/T$ at zero field and a $\sqrt{H}$ dependence of $κ_0(H)/T$ are observed, which provide strong evidences for nodes in the superconducting gap. This result demonstrates that the isovalent Ru doping can also induce nodal superconductivity, as P does in BaFe$_2$(As$_{0.67}$P$_{0.33}$)$_2$. Furthermore, in underdoped Ba(Fe$_{0.77}$Ru$_{0.23}$)$_2$As$_2$ and heavily underdoped BaFe$_2$(As$_{0.82}$P$_{0.18}$)$_2$, $κ_0/T$ manifests similar nodal behavior, which shows the robustness of nodal superconductivity in the underdoped regime and puts constraint on theoretical models.

cond-mat.supr-con↗

arXiv2011

Ballistic transport of graphene pnp junctions with embedded local gates

We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither dielectric-material deposition nor electron-beam irradiation on the graphene, we obtained high-quality graphene pnp devices without degradation of the carrier mobility even in the local-gate region. The corresponding increased mean free path leads to the observation of ballistic and phase-coherent transport across a 130-nm-wide local gate, which is about an order of magnitude wider than reported previously. Furthermore, in our scheme, we demonstrated independent control of the carrier density in the local-gate region, with a conductance map very distinctive from top-gated devices. It was caused as the electric field arising from the global back gate is strongly screened by the embedded local gate. Our scheme allows the realization of ideal multipolar graphene junctions with ballistic carrier transport.

cond-mat.mes-hall↗

arXiv2011

Nodal superconductivity in Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$ induced by isovalent Ru substitution

We present the ultra-low-temperature heat transport study of an iron-based superconductor Ba(Fe$_{0.64}$Ru$_{0.36}$)$_2$As$_2$ ($T_c$ = 20.2 K), in which the superconductivity is induced by isovalent Ru substitution. In zero field we find a large residual linear term $κ_0/T$, more than 40% of the normal-state value. At low field, the $κ_0/T$ shows an $H^{1/2}$ dependence. These provide strong evidences for nodes in the superconducting gap of Ba(Fe$_{0.64}$Ru$_{0.36}$)$_2$As$_2$, which mimics that in another isovalently substituted superconductor BaFe$_2$(As$_{1-x}$P$_x$)$_2$. Our results show that the isovalent Ru substitution can also induce nodal superconductivity in BaFe$_2$As$_2$, as P does, and they may have the same origin. We further compare them with other two nodal superconductors LaFePO and LiFeP.

cond-mat.supr-con↗

arXiv2010

Nearly isotropic upper critical fields in a SrFe$_{1.85}$Co$_{0.15}$As$_{2}$ single crystal

We study temperature dependent upper critical field $H_{\rm c2}$ of a SrFe$_{1.85}$Co$_{0.15}$As$_{2}$ single crystal (\textit{T$_c$}=20.2 K) along \textit{ab}-plane and \textit{c}-axis through resistivity measurements up to 50 T. For the both crystalline directions, $H_{\rm c2}$ becomes nearly isotropic at zero temperature limit, reaching $\sim$ 48 T. The temperature dependence of the $H_{\rm c2}$ curves is explained by interplay between orbital and Pauli limiting behaviors combined with the two band effects.

cond-mat.supr-con↗

arXiv2009

Two-gap and paramagnetic pair-breaking effects on upper critical field of SmFeAsO$_{0.85}$ and SmFeAsO$_{0.8}$F$_{0.2}$ single crystals

We investigated the temperature dependence of the upper critical field [$H_{c2}(T)$] of fluorine-free SmFeAsO$_{0.85}$ and fluorine-doped SmFeAsO$_{0.8}$F$_{0.2}$ single crystals by measuring the resistive transition in low static magnetic fields and in pulsed fields up to 60 T. Both crystals show that $H_{c2}(T)$'s along the c axis [$H_{c2}^c(T)$] and in an $ab$-planar direction [$H_{c2}^{ab}(T)$] exhibit a linear and a sublinear increase, respectively, with decreasing temperature below the superconducting transition. $H_{c2}(T)$'s in both directions deviate from the conventional one-gap Werthamer-Helfand-Hohenberg theoretical prediction at low temperatures. A two-gap nature and the paramagnetic pair-breaking effect are shown to be responsible for the temperature-dependent behavior of $H_{c2}^c$ and $H_{c2}^{ab}$, respectively.

cond-mat.supr-con↗

arXiv2008

Evidence for Coexistence of Superconductivity and Magnetism in Single Crystals of Co-doped SrFe$_2$As$_2$

In order to investigate whether magnetism and superconductivity coexist in Co-doped SrFe$_2$As$_2$, we have prepared single crystals of SrFe$_{2-x}$Co$_x$As$_2$, $x$ = 0 and 0.4, and characterized them via X-ray diffraction, electrical resistivity in zero and applied field up to 9 T as well as at ambient and applied pressure up to 1.6 GPa, and magnetic susceptibility. At $x$ = 0.4, there is both magnetic and resistive evidence for a spin density wave transition at 120 K, while $T_c$ = 19.5 K - indicating coexistent magnetism and superconductivity. A discussion of how these results compare with reported results, both in SrFe$_{2-x}$Co$_x$As$_2$ and in other doped 122 compounds, is given.

cond-mat.supr-con↗

arXiv2007

Carbon Based Superconductors

We review the characteristics of some carbon based novel superconductors which emerged in the past two decades since the discovery of superconductivity in the high-T_c oxocuprates. In particular, we summarize the properties of ternary layered carbide halides of the rare rarth metals with composition RE2C2X2 (RE = Y, La; X=Cl, Br, I) and of the rare earth di- and sesquicarbides, YC2, LaC2 and La2C3. Finally, we briefly discuss the properties of the recently discovered Ca and Yb intercalated graphite superconductors, CaC6 and YbC6.

cond-mat.supr-con↗