arXiv subjects

Jun Yoshinobu

Publications and source records attributed to Jun Yoshinobu.

14 recordsLinked to original sources

arXiv2026

Time- and Frequency-Resolved Observation of Inverse Orbital Hall Effect in Gallium Nitride via Terahertz Polarimetry

Orbitronics has attracted significant attention as a platform for information storage and processing that exploits the orbital angular momentum (OAM) of electrons without the need for spin-orbit coupling. However, experimental evaluation of OAM-charge interconversion remains a challenge and the results are often controversial due to the coexistence of bulk and interfacial contributions and the complexity in sample structures. Here, using circularly polarized light pulses and terahertz (THz) polarimetry, we developed a non-contact method to observe the inverse orbital Hall effect as a bulk response within a single material without employing heterostructure samples. In a semiconductor GaN, we directly captured the OAM-to-charge current conversion of holes in the THz frequency range. By analyzing the sharp frequency dependence of the Hall conductivity, we disentangled the competing microscopic mechanisms and revealed the dominant role of extrinsic contributions to the orbital Hall effect in the dc limit. By contrast, the Hall conductivity at THz frequencies above the impurity scattering rate is attributed to the intrinsic Berry-curvature mechanism,allowing a quantitative comparison with the microscopic theory. Furthermore, the ultrafast dynamics of the inverse orbital Hall signal directly revealed sub-picosecond OAM relaxation of holes, comparable to that of phonon-mediated thermalization. The quantitative argument based on theoretical calculations suggested the existence of an even faster decay channel due to momentum redistribution by acoustic phonons, suggesting a sub-nanometer-scale OAM relaxation length. Our results provide comprehensive and crucial insights into OAM transport and establish an ultrafast, contact-free approach for investigating OAM-to-charge conversion.

cond-mat.mtrl-sci↗

arXiv2026

Signature of inverse orbital Hall effect in silicon studied using time-resolved terahertz polarimetry

We investigated the anomalous Hall conductivity induced in silicon by circularly polarized light at room temperature using near-infrared (NIR) pump-terahertz (THz) probe spectroscopy. The time-resolved detection scheme eliminates the large nonlinear current generated by the field-induced circular photogalvanic effect, allowing exclusive observation of a long-lived anomalous Hall conductivity of photocarriers that depends on the helicity of NIR light. The magnitude of this conductivity is comparable to that of GaAs despite silicon's much weaker spin-orbit coupling, and its robustness against NIR photon energy rules out a spin-polarization-based origin, which occurs only in the vicinity of the bandgap. These results suggest the emergence of the inverse orbital Hall effect, paving the way for silicon-based orbitronics.

cond-mat.mes-hall↗

arXiv2025

Light-induced inverse spin Hall effect and field-induced circular photogalvanic effect in GaAs revealed by two-dimensional terahertz Fourier analysis

The electromotive force transverse to a bias field under irradiation of circularly polarized light, namely the photovoltaic Hall response or light-induced anomalous Hall effect, has attracted considerable attention to investigate the topologically nontrivial states in Floquet engineering and the inverse spin Hall effect of spin-polarized carriers in spintronics. However, taking into account inversion symmetry breaking by the bias field, the circularly polarized light can excite photocarriers with asymmetric momentum distribution, which generates injection current transverse to the bias field. Therefore, the field-induced circular photogalvanic effect (FI-CPGE) should also emerge in the very same experimental configuration for light-induced anomalous Hall effect but has been overlooked in literature. In this work, using terahertz pulses as a bias field for a semiconductor GaAs, we conduct two-dimensional Fourier analysis and demonstrate that FI-CPGE can play a major role in the photovoltaic Hall response. Counterintuitively, FI-CPGE is significantly enhanced when the photocarriers are excited near the bandgap with small density of states and low group velocity, which can be explained by a three-level resonant nonlinear interaction near the band degeneracy point. We also clarified that FI-CPGE would be further largely detected in the contact-type measurement using electrodes because of the absence of a filtering effect inherent to terahertz pulses. This work provides a comprehensive, generalized view of the photovoltaic Hall response in biased materials, paving a new avenue for detecting topological monopoles in momentum space hidden in equilibrium using third-order nonlinear responses.

cond-mat.mtrl-sci↗

arXiv2025

Correction of broadband terahertz electro-optic sampling with GaSe crystals

Gallium selenide (GaSe) is an efficient nonlinear crystal for electro-optic (EO) sampling in the multi-terahertz (THz) frequency range. However, the lattice resonance at several THz frequencies hampers broadband EO sampling, resulting in distorted pulse waveforms. In this work, we experimentally evaluated the frequency-dependent response function in EO sampling, considering the effects of phonons, phase mismatch, and gate pulse waveforms. The phonon effect is described using an effective Faust-Henry coefficient, which was determined to be $-0.21 \pm 0.02$. The corrected field amplitude of multi-THz pulses aligns with additional measurements of average power and a beam diameter. The successful compensation of the frequency characteristics in GaSe will contribute to a more accurate evaluation of multi-THz transients.

physics.optics↗

arXiv2025

Valley polarization dynamics of photoinjected carriers at the band edge in room-temperature silicon studied by terahertz polarimetry

Sixfold-degenerate valleys in Si have attracted considerable attention for valleytronics application. Using optical pump-terahertz (THz) probe spectroscopy, we study the dynamics of valley polarization in bulk Si(001) at room temperature. Linearly polarized pump pulses excite electrons and holes with asymmetric distributions in momentum space, leading to in-plane anisotropic conductivity. By varying the polarization directions of the pump light relative to the in-plane crystalline axes, the valley polarization of electrons and the momentum asymmetry of holes are separately probed through observing the polarization rotation of THz pulses. We demonstrate that the valley relaxation time of electrons near the conduction band minimum exceeds 1.5 ps at room temperature, in good agreement with theoretically calculated intervalley phonon scattering with f process. This work paves the way for Si-based room-temperature valleytronics.

cond-mat.mtrl-sci↗

arXiv2024

Emergence of high-mobility carriers in topological kagome bad metal Mn$_3$Sn by intense photoexcitation

Kagome-lattice materials offer novel playgrounds of exploring topologically nontrivial states of electrons under influence of many-body interactions. A noncollinear kagome antiferromagnet Mn$_3$Sn has attracted particular interest for application in spintronics owing to the large anomalous Hall effect related to the Weyl dispersion near the Fermi energy. In addition, strong electronic correlation suggesting the Kondo physics has also been implied. However, the effect of correlation on the band topology and their interplay remains elusive. Here, we investigate nonequilibrium Hall transport in a photoexcited Mn$_3$Sn using time-resolved terahertz Faraday rotation spectroscopy. In equilibrium, Mn$_3$Sn is a bad metal close to the Mott-Ioffe-Regal limit with low carrier mobility, and thus only the anomalous Hall effect is discerned. By contrast, intense photoexcitation beyond an approximate threshold gives rise to a clear cyclotron resonance, namely the normal Hall effect, indicating the emergence of unusual carriers with 50 times lighter effective mass and 40 times less scattering. The lifetime of high-mobility carriers as long as a few tens of picoseconds and a threshold-like behavior for the pump fluence are hardly explained by contribution of photoexcited hot carriers. Instead, the emergence of unusual carriers may be accounted for by dielectric screening of the on-site Coulomb interaction by high-density delocalized photocarriers. A possible role of electronic correlation in equilibrium transport in Mn$_3$Sn beyond the single-particle picture is discussed.

cond-mat.str-el↗

arXiv2024

Observation of Terahertz Spin Hall Conductivity Spectrum in GaAs with Optical Spin Injection

We report the first observation of the spin Hall conductivity spectrum in GaAs at room temperature. Our terahertz polarimetry with a precision of several $μ$rads resolves the Faraday rotation of terahertz pulses arising from the inverse spin Hall effect of optically injected spin-polarized electrons. The obtained spin Hall conductivity spectrum exhibits an excellent quantitative agreement with theory, demonstrating a crossover in the dominant origin from impurity scattering in the DC regime to the intrinsic Berry-curvature mechanism in the terahertz regime. Our spectroscopic technique opens a new pathway to analyze anomalous transports related to spin, valley, or orbital degrees of freedom.

cond-mat.mtrl-sci↗

arXiv2024

Anomalous Hall transport by optically injected isospin degree of freedom in Dirac semimetal thin film

Chirality of massless fermions emergent in condensed matter is a key to understand their characteristic behavior as well as to exploit their functionality. However, chiral nature of massless fermions in Dirac semimetals has remained elusive, due to equivalent occupation of carriers with the opposite chirality in thermal equilibrium. Here, we show that the isospin degree of freedom, which labels the chirality of massless carriers from a crystallographic point of view, can be injected by circularly polarized light. Terahertz Faraday rotation spectroscopy successfully detects the anomalous Hall conductivity by a light-induced isospin polarization in a three-dimensional Dirac semimetal, Cd$_3$As$_2$. Spectral analysis of the Hall conductivity reveals a long scattering time and a long decay time, which are characteristic of the isospin. The long-lived, robust, and reversible character of the isospin promises potential application of Dirac semimetals in future information technology.

cond-mat.mes-hall↗

arXiv2023

Disentangling the Competing Mechanisms of Light-Induced Anomalous Hall Conductivity in Three-Dimensional Dirac Semimetal

We experimentally elucidate the origin of the anomalous Hall conductivity in a three-dimensional Dirac semimetal, Cd$_3$As$_2$, driven by circularly polarized light. Using time-resolved terahertz Faraday rotation spectroscopy, we determine the transient Hall conductivity spectrum with special attention to its sign. Our results clearly show the dominance of direct photocurrent generation assisted by the terahertz electric field. The contribution from the Floquet-Weyl nodes is found to be minor when the driving light is in resonance with interband transitions. We develop a generally applicable classification of microscopic mechanisms of light-induced anomalous Hall conductivity.

cond-mat.mtrl-sci↗

arXiv2022

Termination of Graphene Edges Created by Hydrogen and Deuterium Plasmas

Edge engineering is important for both fundamental research and applications as the device size decreases to nanometer scale. This is especially the case for graphene because a graphene edge shows totally different electronic properties depending on the atomic structure and the termination. It has recently been shown that an atomically precise zigzag edge can be obtained by etching graphene and graphite using hydrogen (H) plasma. However, edge termination had not been studied directly. In this study, termination of edges created by H-plasma is studied by high-resolution electron energy loss spectroscopy (HREELS) to show that the edge is $\mathrm{sp}^{2}$ bonded and the edge carbon atom is terminated by only one H atom. This suggests that an ideal zigzag edge, which is not only atomically precise but also $\mathrm{sp}^{2}$ bonding, can be obtained by H-plasma etching. Etching of the graphite surface with plasma of a different isotope, deuterium (D), is also studied by scanning tunneling microscopy (STM) to show that D-plasma anisotropically etches graphite less efficiently, although it can make defects more efficiently, than H-plasma.

cond-mat.mes-hall↗

arXiv2022

Stimulated Rayleigh Scattering Enhanced by a Longitudinal Plasma Mode in a Periodically Driven Dirac Semimetal Cd$_3$As$_2$

Using broadband (12-45 THz) multi-terahertz spectroscopy, we show that stimulated Rayleigh scattering dominates the transient optical conductivity of cadmium arsenide, a Dirac semimetal, under an optical driving field at 30 THz. The characteristic dispersive lineshape with net optical gain is accounted for by optical transitions between light-induced Floquet subbands, strikingly enhanced by the longitudinal plasma mode. Stimulated Rayleigh scattering with an unprecedentedly large refractive index change may pave the way for slow light generation in conductive solids at room temperature.

cond-mat.mtrl-sci↗

arXiv2022

Tracking ultrafast change of multiterahertz broadband response functions in a photoexcited Dirac semimetal Cd$_3$As$_2$ thin film

The electromagnetic response of Dirac semimetals in the infrared and terahertz frequency ranges is attracting growing interest for potential applications in optoelectronics and nonlinear optics. The interplay between the free-carrier response and interband transitions in the gapless, linear dispersion relation plays a key role in enabling novel functionalities. Here we investigate ultrafast dynamics in thin films of a photoexcited Dirac semimetal Cd$_3$As$_2$ by probing the broadband response functions as complex quantities in the multiterahertz region (10-45 THz, 40-180 meV, or 7-30 $μ$m), which covers the crossover between the inter and intraband response. We resolve dynamics of the photoexcited nonthermal electrons which merge with originally existing carriers to form a single thermalized electron gas and how it is facilitated by high-density excitation. We also demonstrate that a large reduction of the refractive index by 80% dominates the nonequilibrium infrared response, which can be utilized for designing ultrafast switches in active optoelectronics.

cond-mat.mtrl-sci↗

arXiv2020

Emergence of Nearly Flat Bands through an Embedded Kagome Lattice in an Epitaxial Two-dimensional Ge Layer on ZrB2(0001)

Ge atoms segregating on zirconium diboride thin films grown on Ge(111) were found to crystallize into a two-dimensional bitriangular structure which was recently predicted to be a flat band material. Angle-resolved photoemission experiments together with theoretical calculations verified the existence of a nearly flat band in spite of non-negligible in-plane long-range hopping and interactions with the substrate. This provides the first experimental evidence that a flat band can emerge from the electronic coupling between atoms and not from the geometry of the atomic structure.

cond-mat.str-el↗

arXiv2017

Single-particle excitation of core states in epitaxial silicene

Recent studies of core-level X-ray photoelectron spectroscopy (XPS) spectra of silicene on ZrB$_2$(0001) were found to be inconsistent with the density of states (DOS) of a planar-like structure that has been proposed as the ground state by density functional theory (DFT). To resolve the discrepancy, a reexamination of the XPS spectra and direct theoretical access of accurate single-particle excitation energies are desired. By analyzing the XPS data using symmetric Voigt functions, different binding energies and its sequence of Si $2p$ orbitals can be assigned from previously reported ones where asymmetric pseudo-Voigt functions are adopted. Theoretically, we have adopted an approach developed very recently, which follows the sophisticated $Δ$ self-consistent field ($Δ$SCF) methods, to study the single-particle excitation of core states. In the calculations, each single-particle energy and the renormalized core-hole charge density are calculated straightforwardly via two SCF calculations. By comparing the results, the theoretical core-level absolute binding energies including the splitting due to spin-orbit coupling are in good agreement with the observed high-resolution XPS spectra. The good agreement not only resolves the puzzling discrepancy between experiment and theory (DOS) but also advocates the success of DFT in describing many-body interactions of electrons at the surface.

cond-mat.mtrl-sci↗