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Jun-Hyung Cho

Publications and source records attributed to Jun-Hyung Cho.

At least 37 records · Page 2Linked to original sources

Stabilization mechanism of clathrate H cages in a room-temperature superconductor LaH$_{10}$

Lanthanum hydride LaH$_{10}$ with a sodalitelike clathrate structure was experimentally realized to exhibit a room-temperature superconductivity under megabar pressures. Based on first-principles calculations, we reveal that the metal framework of La atoms has the excess electrons at interstitial regions. Such anionic electrons are easily captured to form a stable clathrate structure of H cages. We thus propose that the charge transfer from La to H atoms is mostly driven by the electride property of the La framework. Further, the interaction between La atoms and H cages induces a delocalization of La-5$p$ semicore states to hybridize with H-1$s$ state. Consequently, the bonding nature between La atoms and H cages is characterized as a mixture of ionic and covalent. Our findings demonstrate that anionic and semicore electrons play important roles in stabilizing clathrate H cages in LaH$_{10}$, which can be broadly applicable to other high-pressure rare-earth hydrides with clathrate structures.

cond-mat.supr-con↗

Isotope effect in superconducting lanthanum hydride under high compression

Recently, the discovery of room-temperature superconductivity (SC) was experimentally realized in the fcc phase of LaH$_{10}$ under megabar pressure. Specifically, the isotope effect of $T_{\rm c}$ was measured by the replacement of hydrogen (H) with deuterium (D), demonstrating a driving role of phonons in the observed room-temperature SC. Herein, based on the first-principles calculations within the harmonic approximation, we reveal that (i) the identical electron-phonon coupling constants of fcc LaH$_{10}$ and LaD$_{10}$ decrease monotonously with increasing pressure and (ii) the isotope effect of $T_{\rm c}$ is nearly proportional to $M^{-α}$ ($M$: ionic mass) with $α$ ${\approx}$ 0.465, irrespective of pressure. The predicted value of $α$ agrees well with the experimental one ($α=0.46$) measured at around 150 GPa. Thus, our findings provide a theoretical confirmation of the conventional electron-phonon coupling mechanism in a newly discovered room-temperature superconductor of compressed LaH$_{10}$.

cond-mat.supr-con↗

Dirac Fermions in Antiferromagnetic FeSn Kagome Lattices with Combined Space Inversion and Time Reversal Symmetry

Symmetry principles play a critical role in formulating the fundamental laws of nature, with a large number of symmetry-protected topological states identified in recent studies of quantum materials. As compelling examples, massless Dirac fermions are jointly protected by the space inversion symmetry $P$ and time reversal symmetry $T$ supplemented by additional crystalline symmetry, while evolving into Weyl fermions when either $P$ or $T$ is broken. Here, based on first-principles calculations, we reveal that massless Dirac fermions are present in a layered FeSn crystal containing antiferromagnetically coupled ferromagnetic Fe kagome layers, where each of the $P$ and $T$ symmetries is individually broken but the combined $PT$ symmetry is preserved. These stable Dirac fermions protected by the combined $PT$ symmetry with additional non-symmorphic $S_{\rm{2z}}$ symmetry can be transformed to either massless/massive Weyl or massive Dirac fermions by breaking the $PT$ or $S_{\rm{2z}}$ symmetry. Our angle-resolved photoemission spectroscopy experiments indeed observed the Dirac states in the bulk and two-dimensional Weyl-like states at the surface. The present study substantially enriches our fundamental understanding of the intricate connections between symmetries and topologies of matter, especially with the spin degree of freedom playing a vital role.

cond-mat.mtrl-sci↗

Two-dimensional topological semimetal states in monolayers Cu$_2$Ge, Fe$_2$Ge, and Fe$_2$Sn

Recent experimental realizations of the topological semimetal states in several monolayer systems are very attractive because of their exotic quantum phenomena and technological applications. Based on first-principles density-functional theory calculations including spin-orbit coupling, we here explore the drastically different two-dimensional (2D) topological semimetal states in three monolayers Cu$_2$Ge, Fe$_2$Ge, and Fe$_2$Sn, which are isostructural with a combination of the honeycomb Cu or Fe lattice and the triangular Ge or Sn lattice. We find that (i) the nonmagnetic (NM) Cu$_{2}$Ge monolayer having a planar geometry exhibits the massive Dirac nodal lines, (ii) the ferromagentic (FM) Fe$_2$Ge monolayer having a buckled geometry exhibits the massive Weyl points, and (iii) the FM Fe$_2$Sn monolayer having a planar geometry and an out-of-plane magnetic easy axis exhibits the massless Weyl nodal lines. It is therefore revealed that mirror symmetry cannot protect the four-fold degenerate Dirac nodal lines in the NM Cu$_{2}$Ge monolayer, but preserves the doubly degenerate Weyl nodal lines in the FM Fe$_{2}$Sn monolayer. Our findings demonstrate that the interplay of crystal symmetry, magnetic easy axis, and band topology is of importance for tailoring various 2D topological states in Cu$_2$Ge, Fe$_2$Ge, and Fe$_2$Sn monlayers.

cond-mat.mtrl-sci↗

Multiband Nature of the Room-Temperature Superconductivity in Compressed LaH$_{10}$

Recently, the discovery of room-temperature superconductivity (SC) was experimentally realized in the fcc phase of LaH$_{10}$ under megabar pressures. This SC of compressed LaH$_{10}$ has been explained in terms of strong electron-phonon coupling (EPC), but the mechanism of how the large EPC constant and high superconducting transition temperature $T_{\rm c}$ are attained has not yet been clearly identified. Based on the density-functional theory and the Migdal-Eliashberg formalism, we reveal the presence of two nodeless, anisotropic superconducting gaps on the Fermi surface (FS). Here, the small gap is mostly associated with the hybridized states of H $s$ and La $f$ orbitals on the three outer FS sheets, while the large gap arises mainly from the hybridized state of neighboring H $s$ or $p$ orbitals on the one inner FS sheet. Further, we find that the EPC constant of compressed YH$_{10}$ with the same sodalite-like clathrate structure is enhanced due to the two additional FS sheets, leading to a higher $T_{\rm c}$ than LaH$_{10}$. It is thus demonstrated that the multiband pairing of hybridized electronic states is responsible for the large EPC constant and room-temperature SC in compressed hydrides LaH$_{10}$ and YH$_{10}$.

cond-mat.supr-con↗

Pressure dependence of the superconducting transition temperature of compressed LaH$_{10}$

Two recent experiments [M. Somayazulu $et$ $al$., Phys. Rev. Lett. ${\bf 122}$, 027001 (2019) and A. P. Drozdov $et$ $al$., Nature ${\bf 569}$, 528 (2019)] reported the discovery of superconductivity in the fcc phase of LaH$_{10}$ at a critical temperature $T_{\rm c}$ between 250${\sim}$260 K under a pressure of about 170 GPa. However, the dependence of $T_{\rm c}$ on pressure showed different patterns: i.e., the former experiment observed a continuous increase of $T_{\rm c}$ up to ${\sim}$275 K on further increase of pressure to 202 GPa, while the latter one observed an abrupt decrease of $T_{\rm c}$ with increasing pressure. Here, based on first-principles calculations, we reveal that for the fcc-LaH$_{10}$ phase, softening of the low-frequency optical phonon modes of H atoms dramatically occurs as pressure decreases, giving rise to a significant increase of the electron-phonon coupling (EPC) constant. Meanwhile, the electronic band structure near the Fermi energy is insensitive to change with respect to pressure. These results indicate that the pressure-dependent phonon softening is unlikely associated with Fermi-surface nesting, but driven by effective screening with the electronic states near the Fermi energy. It is thus demonstrated that the strong variation of EPC with respect to pressure plays a dominant role in the decrease of $T_{\rm c}$ with increasing pressure, supporting the measurements of Drozdov $et$ $al$.

cond-mat.supr-con↗

Hidden Weyl Fermions in Paramagnetic Electride Y$_2$C

Recent experimental observations of Weyl fermions in materials opens a new frontier of condensed matter physics. Based on first-principles calculations, we here discover Weyl fermions in a two-dimensional layered electride material Y$_2$C. We find that the Y 4$d$ orbitals and the anionic $s$-like orbital confined in the interstitial spaces between [Y$_2$C]$^{2+}$ cationic layers are hybridized to give rise to van Have singularities near the Fermi energy $E_{\rm F}$, which induce a ferromagnetic (FM) order via the Stoner-type instability. This FM phase with broken time-reversal symmetry hosts the rotation-symmetry protected Weyl nodal lines near $E_{\rm F}$, which are converted into the multiple pairs of Weyl nodes by including spin-orbit coupling (SOC). However, we reveal that, due to its small SOC effects, Y$_2$C has a topologically nontrivial drumhead-like surface state near $E_{\rm F}$ as well as a very small magnetic anisotropy energy with several $μ$eV per unit cell, consistent with the observed surface state and paramagnetism at low temperatures below ${\sim}$2 K. Our findings propose that the Brillouin zone coordinates of Weyl fermions hidden in paramagnetic electride materials would fluctuate in momentum space with random orientations of the magnetization direction.

cond-mat.mtrl-sci↗

Origin of High-Temperature Superconductivity in Compressed LaH$_{10}$

Room-temperature superconductivity has been one of the most challenging subjects in modern physics. Recent experiments reported that lanthanum hydride LaH$_{10{\pm}x}$ ($x$$<$1) raises a superconducting transition temperature $T_{\rm c}$ up to ${\sim}$260 (or 215) K at high pressures around 190 (150) GPa. Here, based on first-principles calculations, we reveal the existence of topological Dirac-nodal-line (DNL) states in compressed LaH$_{10}$. Remarkably, the DNLs protected by the combined inversion and time-reversal symmetry and the rotation symmetry create a van Hove singularity (vHs) near the Fermi energy, giving rise to large electronic density of states. Contrasting with other La hydrides containing cationic La and anionic H atoms, LaH$_{10}$ shows a peculiar characteristic of electrical charges with anionic La and both cationic and anionic H species, caused by a strong hybridization of the La $f$ and H $s$ orbitals. We find that a large number of electronic states at the vHs are strongly coupled to the H-derived high-frequency phonon modes that are induced via the unusual, intricate bonding network of LaH$_{10}$, thereby yielding a high $T_{\rm c}$. Our findings not only elucidate the microscopic origin of the observed high-$T_{\rm c}$ BCS-type superconductivity in LaH$_{10}$, but also pave the route for achieving room-temperature topological superconductors in compressed hydrogen-rich compounds.

cond-mat.supr-con↗

Hydrogen adsorption-induced nanomagnetism at the Si(111)-(7$\times$7) surface

The creation of magnetism on non-magnetic semiconductor surfaces is of importance for the realization of spintronics devices. Especially, the coupling of electron spins within quantum nanostructures can be utilized for nanomagnetism applications. Here, we demonstrate, based on first-principles density-functional theory calculations, that the adsorption of H atoms on the Si(111)-(7$\times$7) surface induces the spin polarization of surrounding Si dangling bonds (DBs) and their spin orderings. It is revealed that the H adsorption on a rest-atom site exhibits a Jahn-Teller-like distortion that accompanies a charge transfer from the rest atom to the nearest neighboring adatoms. This charge transfer increases the local density of states of such three adatoms at the Fermi level, thereby inducing a Stoner-type instability to produce a ferrimagnetic order of adatom DBs around the adsorbed H atom. Meanwhile, the H adsorption on an adatom site cannot induce spin polarization, but, as adsorbed H atoms increase, the ferrimagnetic order of rest-atom DBs emerges through the charge transfer from rest atoms to adatoms. Our findings provide a microscopic mechanism of the H-induced spin orderings of Si DBs at the atomic scale, which paves a novel way to the design of nanoscale magnetism in the representative semiconductor surface.

cond-mat.mes-hall↗

Competing edge structures of Sb and Bi bilayers by trivial and nontrivial band topologies

One-dimensional (1D) edge states formed at the boundaries of 2D normal and topological insulators have shown intriguing quantum phases such as charge density wave and quantum spin Hall effect. Based on first-principles density-functional theory calculations including spin-orbit coupling (SOC), we show that the edge states of zigzag Sb(111) and Bi(111) nanoribbons drastically change the stability of their edge structures. For zigzag Sb(111) nanoribbon, the Peierls-distorted or reconstructed edge structure is stabilized by a band-gap opening. However, for zigzag Bi(111) nanoribbon, such two insulating structures are destabilized due to the presence of topologically protected gapless edge states, resulting in the stabilization of a metallic, shear-distorted edge structure. We also show that the edge states of the Bi(111) nanoribbon exhibit a larger Rashba-type spin splitting at the boundary of Brillouin zone, compared to those of the Sb(111) nanoribbon. Interestingly, the spin textures of edge states in the Peierls-distorted Sb edge structure and the shear-distorted Bi edge structure have all three spin components perpendicular and parallel to the edges, due to their broken mirror-plane symmetry. The present findings demonstrate that the topologically trivial and nontrivial edge states play crucial roles in determining the edge structures of normal and topological insulators.

cond-mat.mtrl-sci↗

Atomic and electronic structure of doped Si(111)(2root3x2root3)R30(degrees)-Sn interfaces

The hole doped Si(111)(2root3x2root3)R30(degrees)-Sn interface exhibits a symmetry-breaking insulator-insulator transition below 100 K that appears to be triggered by electron tunneling into the empty surface-state bands. No such transition is seen in electron-doped systems. To elucidate the nature and driving force of this phenomenon, the structure of the interface must be resolved. Here we report on an extensive experimental and theoretical study, including scanning tunneling microscopy and spectroscopy (STM/STS), dynamical low-energy electron diffraction (LEED) analysis, and density functional theory (DFT) calculations, to elucidate the structure of this interface. We consider six different structure models, three of which have been proposed before, and conclude that only two of them can account for the majority of experimental data. One of them is the model according to Tornevik et al. [C. Tornevik et al., Phys. Rev. B 44, 13144 (1991)] with a total Sn coverage of 14/12 monolayers (ML). The other is the 'revised trimer model' with a total Sn coverage of 13/12 ML, introduced in this work. These two models are very difficult to discriminate on the basis of DFT or LEED alone, but STS data clearly point toward the Törnevik model as the most viable candidate among the models considered here. The STS data also provide additional insights regarding the electron-injection-driven phase transformation as well as the critical role of valence band holes in this process. Similar processes may occur at other metal/semiconductor interfaces, provided they are non-metallic and can be doped. This could open up a new pathway toward the creation of novel surface phases with potentially very interesting and desirable electronic properties.

cond-mat.mes-hall↗

The Nature of Bonding in Bulk Tellurium Composed of One-Dimensional Helical Chains

Bulk tellurium (Te) is composed of one-dimensional (1D) helical chains which have been considered to be coupled by van der Waals (vdW) interactions. However, based on first-principles density-functional theory calculations, we here propose a different bonding nature between neighboring chains: i.e., the helical chains made of normal covalent bonds are connected together by coordinate covalent bonds. It is revealed that the lone pairs of electrons of Te atom participate in forming coordinate covalent bonds between neighboring chains. Therefore, each Te atom behaves as both electron donor to neighboring chains and electron acceptor from neighboring chains. This ligand-metal-like bonding nature in bulk Te results in the same order of bulk moduli along the directions parallel and perpendicular to the chains, contrasting with the large anisotropy of bulk moduli in vdW crystals. We further find that the electron effective masses parallel and perpendicular to the chains are almost the same each other, consistent with the observed nearly isotropic electrical resistivity. It is thus demonstrated that the normal/coordinate covalent bonds parallel/perpendicular to the chains in bulk Te lead to a minor anisotropy in structural and transport properties, distinct from a strong anisotropy observed in the typical two-dimensional (2D) vdW materials such as graphite and MoS$_2$.

cond-mat.mtrl-sci↗

Competing charge density wave and antiferromagnetism of metallic atom wires in GaN(10${\overline{1}}$0) and ZnO(10${\overline{1}}$0)

Low-dimensional electron systems often show a delicate interplay between electron-phonon and electron-electron interactions, giving rise to interesting quantum phases such as the charge density wave (CDW) and magnetism. Using the density-functional theory (DFT) calculations with the semilocal and hybrid exchange-correlation functionals as well as the exact-exchange plus correlation in the random-phase approximation (EX + cRPA), we systematically investigate the ground state of the metallic atom wires containing dangling-bond (DB) electrons, fabricated by partially hydrogenating the GaN(10${\overline{1}}$0) and ZnO(10${\overline{1}}$0) surfaces. We find that the CDW or antiferromagnetic (AFM) order has an electronic energy gain due to a band-gap opening, thereby being more stabilized compared to the metallic state. Our semilocal DFT calculation predicts that both DB wires in GaN(10${\overline{1}}$0) and ZnO(10${\overline{1}}$0) have the same CDW ground state, whereas the hybrid DFT and EX+cRPA calculations predict the AFM ground state for the former DB wire and the CDW ground state for the latter one. It is revealed that more localized Ga DB electrons in GaN(10${\overline{1}}$0) prefer the AFM order, while less localized Zn DB electrons in ZnO(10${\overline{1}}$0) the CDW formation. Our findings demonstrate that the drastically different ground states are competing in the DB wires created on the two representative compound semiconductor surfaces.

cond-mat.mtrl-sci↗

Microscopic mechanism of tunable band gap in potassium doped few-layer black phosphorus

Tuning band gaps in two-dimensional (2D) materials is of great interest in the fundamental and practical aspects of contemporary material sciences. Recently, black phosphorus (BP) consisting of stacked layers of phosphorene was experimentally observed to show a widely tunable band gap by means of the deposition of potassium (K) atoms on the surface, thereby allowing great flexibility in design and optimization of electronic and optoelectronic devices. Here, based on the density-functional theory calculations, we demonstrates that the donated electrons from K dopants are mostly localized at the topmost BP layer and such a surface charging efficiently screens the K ion potential. It is found that, as the K doping increases, the extreme surface charging and its screening of K atoms shift the conduction bands down in energy, i.e., towards higher binding energy, because they have more charge near the surface, while it has little influence on the valence bands having more charge in the deeper layers. This result provides a different explanation for the observed tunable band gap compared to the previously proposed giant Stark effect where a vertical electric field from the positively ionized K overlayer to the negatively charged BP layers shifts the conduction band minimum $Γ_{\rm 1c}$ (valence band minimum $Γ_{\rm 8v}$) downwards (upwards). The present prediction of $Γ_{\rm 1c}$ and $Γ_{\rm 8v}$ as a function of the K doping reproduces well the widely tunable band gap, anisotropic Dirac semimetal state, and band-inverted semimetal state, as observed by angle-resolved photoemission spectroscopy experiment. Our findings shed new light on a route for tunable band gap engineering of 2D materials through the surface doping of alkali metals.

cond-mat.mtrl-sci↗

Coupling between Charge, Lattice, Orbital, and Spin in a Charge Density Wave of 1$T$-TaS$_2$

Two-dimensional layered transition metal dichalcogenide (TMDC) materials often exhibit exotic quantum matter phases due to the delicate coupling and competitions between the charge, lattice, orbital, and spin degrees of freedom. Surprisingly, we here present, based on first-principles density-functional theory calculations, the incorporation of all such degrees of freedom in a charge density wave (CDW) of monolayer (ML) TMDC 1$T$-TaS$_2$. We reveal that the CDW formed via the electron-phonon coupling is significantly stabilized by the orbital hybridization. The resulting lattice distortion to the "David-star" superstructure constituted of one cental, six nearest-neighbor, and six next-nearest-neighbor Ta atoms is accompanied by the formation of quasimolecular orbitals due to a strong hybridization of the Ta $t_{\rm 2g}$ orbitals. Furthermore, the flat band of the quasimolecular orbital at the Fermi level has a spin splitting caused by an intramolecular exchange, yielding a full spin polarization with a band-gap opening. Our finding of the intricate charge-lattice-orbital-spin coupling in ML 1$T$-TaS$_2$ provides a framework for the exploration of various CDW phases observed in few-layer or bulk 1$T$-TaS$_2$.

cond-mat.mes-hall↗

Comment on "Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces"

In a recent Letter, Zhao et al. [1] reported the origin of quasi-one-dimensional metal-insulator (MI) transitions in compound semiconductor surfaces. Based on a density-functional theory (DFT) calculation within the generalized gradient approximation (GGA), they claimed that one-atom-wide metallic structures formed by a selective bonding of H or Li atoms to GaN(10-10) and ZnO(10-10) undergo the Peierls-type MI transitions, leading to a charge-density-wave (CDW) formation with periodic lattice distortion. However, we here demonstrate that such a CDW phase is due to the artifact of the GGA, while the antiferromagnetic (AFM) ground state is predicted by the hybrid DFT calculation and the exact-exchange plus correlation in the random-phase approximation (EX + cRPA). [1] J. Z. Zhao, W. Fan, M. J. Verstraete, Z. Zanolli, J. Fan, X. B. Yang, H. Xu, and S. Y. Tong, Phys. Rev. Lett. 117, 116101 (2016).

cond-mat.mes-hall↗

Density-functional calculations of multivalency-driven formation of Te-based monolayer materials with superior electronic and optical properties

Contemporary science is witnessing a rapid expansion of the two-dimensional (2D) materials family, each member possessing intriguing emergent properties of fundamental and practical importance. Using the particle-swarm optimization method in combination with first-principles density functional theory calculations, here wepredict a new category of 2D monolayers named tellurene, composed of the metalloid element Te, with stable 1T-MoS2-like ( α-Te), and metastable tetragonal (\b{eta}-Te) and 2H-MoS2-like (γ-Te) structures. The underlying formation mechanism of such tri-layer arrangements is uniquely rooted in the multivalent nature of Te, with the central-layer Te behaving more metal-like (e.g., Mo), and the two outer layers more semiconductor-like (e.g.,S). In particular, the α-Te phase can be spontaneously obtained from the magic thicknesses truncated along the [001] direction of the trigonal structure of bulk Te. Furthermore, both the α- and \b{eta}-Te phases possess electron and hole mobilities much higher than MoS2, as well as salient optical absorption properties. These findings effectively extend the realm of 2D materials to group-VI monolayers, and provide a new and generic formation mechanism for designing 2D materials.

cond-mat.mes-hall↗

Stacking-sequence-independent band structure and shear exfoliation of two-dimensional electride materials

The electronic band structure of crystals is generally influenced by the periodic arrangement of their constituent atoms. Specifically, the emerging two-dimensional (2D) layered structures have shown different band structures with respect to their stacking configurations. Here, based on first-principles density-functional theory calculations, we demonstrate that the band structure of the recently synthesized 2D Ca$_2$N electride changes little for the stacking sequence as well as the lateral interlayer shift. This intriguing invariance of band structure with respect to geometrical variations can be attributed to a complete screening of [Ca$_2$N]$^{+}$ cationic layers by anionic excess electrons delocalized between the cationic layers. The resulting weak interactions between 2D dressed cationic layers give rise to not only a shallow potential barrier for bilayer sliding but also an electron-doping facilitated shear exfoliation. Our findings open a route for exploration of the peculiar geometry-insensitive electronic properties in 2D electride materials, which will be useful for future thermally stable electronic applications.

cond-mat.mtrl-sci↗