arXiv subjects

Jun-Wei Luo

Publications and source records attributed to Jun-Wei Luo.

At least 19 recordsLinked to original sources

arXiv2026

Superfast hole spin qubits enabled by uniaxial strain-boosted spin-orbit coupling

Two-dimensional (2D) electron/hole gases confined in semiconductor heterostructures suffer from weak Rashba spin-orbit coupling (SOC) for manipulating spin degreee of freedom via an electric rather than a magnetic field. Here, we show that complementary metal-oxide-semiconductor technology-accessible strain could substantially enhance the linear Rashba SOC of the top hole subband in Ge/SiGe quantum wells (QWs) to a level comparable to that of 2D Rashba materials through enhancing the mixture of the light-hole and heavy-hole bands. We further show that strongly enhanced Rashba SOC boosts the Rabi frequency of hole spin qubits confined in Ge/SiGe QWs by two orders of magnitude to an unprecedented 40 GHz, more than one order of magnitude faster than other qubit platforms. We also demonstrate that the hole spin rotation with Rabi frequency > 25 GHz enters a new regime being immune to gate control-induced electric noise, opening a new avenue to simultaneously improve the gate speed and gate fidelity. Our findings provide a new routine to substantially enhance the Rashba SOC in 2D semiconductor hole gases to a level that is great for spintronic applications.

cond-mat.mes-hall↗

arXiv2026

High-Fidelity Hole Spin Qubits Reveal Quadrupolar Nuclear-Bath Dynamics in Isotopically Purified Planar Germanium

Planar Germanium has emerged as a promising platform to build spin-based large scale quantum computers. By exploiting the anisotropic hyperfine interaction of holes in Ge, qubits with long T2* have been recently realized. While the performance of single qubits is still more or less limited by 73Ge nuclear spin fluctuations, the site-to-site variation of qubit sweet spot becomes obstacles to maintaining high fidelity of each qubit across the whole wafer. To achieve high performance Ge-based quantum circuit, it is therefore essential to eliminate the origin source of hyperfine noise. In its Silicon counterparts, reduction of 29Si abundance enables exceptional high-fidelity operation. In contrast, hole qubits based on isotopically purified Ge have not been demonstrated. Here, we report the synthesis of high quality 2-dimensional hole gas (2DHG) with enriched 70GeH4 precursor. Due to the suppression of nonzero spin nucleus, the qubits' T2* on the sweet spot is moderately extended beyond 20 us, surpassing the previous best reported Ge hole qubits. More importantly, the qubits' T2* off the sweet spot is enhanced to above 3 us, enabling single qubit gate fidelity exceeding 99.9% in both operating regimes. Hahn-echo spectroscopy further resolves a finite-frequency nuclear-noise channel that is distinct from the conventional Larmor-linked hyperfine response. We associate this channel with quadrupole-modified dynamics of residual 73Ge nuclei sampling local electric-field gradients near the Ge/SiGe interface. Its field scaling and angle-dependent visibility are consistent with a qubit-visible quadrupolar nuclear-noise component transduced through the anisotropic hyperfine interaction of Ge holes. These results establish isotopically purified planar Ge as a high-coherence scalable platform for hole spin qubits and provide a spectroscopic probe of interfacial quadrupolar nuclear dynamics.

quant-ph↗

arXiv2026

A Route to Nonrelativistic Altermagnetic Spin Splitting via Ultrafast Light

We identify a nonequilibrium route for generating altermagnetic spin splitting in antiferromagnet by ultrafast light. Unlike existing strategies, this route does not require relativistic angular-momentum transfer, static symmetry breaking, or auxiliary external fields. Using real-time time-dependent density functional theory, we demonstrate in the antiferromagnetic perovskite KNiF3 that linearly polarized light can induce momentum-dependent altermagnetic spin splitting by breaking the effective time-reversal symmetry through photoexcited charge redistribution and the resulting lattice distortion. We provide a general symmetry selection rule for this route. These results establish a mechanism for ultrafast control of altermagnetism and extend its material realization into the nonequilibrium regime.

cond-mat.mtrl-sci↗

arXiv2025

Protected valley splitting against interface disorder toward scalable silicon electron spin qubits

Regardless of various material design strategies, experimentally achieving substantial and controllable valley splitting in Si/SiGe quantum wells remains a central challenge for ensuring high gate uniformity. This difficulty arises from unavoidable atomic-scale disorder at the interface, caused by alloy randomness, which suppresses valley splitting and, more critically, induces large variations. Here, we demonstrate that CMOS-compatible uniaxial strain can substantially enhance valley splitting, rendering it immune to interface disorder. Atomistic pseudopotential calculations show that uniaxial strain linearly restores the valley splitting suppressed by interfacial disorder, with a large enhancement rate, while keeping disorder-induced variations within a narrow distribution. We reveal that uniaxial strain introduces a new coupling channel between bulk valleys in adjacent Brillouin zones through a small momentum transfer, which markedly reduces the susceptibility of valley splitting to interfacial disorder. These findings establish a viable route to improve gate uniformity in silicon-based spin qubits, paving the way for scalable quantum processors.

cond-mat.mes-hall↗

arXiv2025

Unified interface dipole theory for Fermi level pinning effect at metal-semiconductor contacts

We present a unified bond dipole theory for metal-semiconductor interfaces to explain the microscopic origin of interface dipoles and Fermi level pinning (FLP) in terms of Harrison's bond-orbital model. By combining first-principles calculations with tight-binding analysis, we show that localized bonding between semiconductor surface dangling bonds and metal orbitals is sufficient to generate a large interface dipole and induce strong FLP, even when only a single metal monolayer is present. Within this framework, metal-induced gap states (MIGS), dangling-bond-induced surface states (DBSS), and bonding states embedded in the valence band are all understood as different outcomes of the same underlying interface bonding mechanism, rather than as independent causes of FLP. We further establish that the key parameter governing FLP strength is the density of surface dangling bonds that can form new chemical bonds with the metal, which directly controls the magnitude of the bond-induced interface dipole. This picture naturally explains the weaker pinning observed in more ionic semiconductors than in covalent ones and provides practical guidance for engineering metal-semiconductor interfaces and tuning Schottky barrier heights.

cond-mat.mtrl-sci↗

arXiv2025

Room-temperature alignment-free magnetometry with boron vacancies in hot-pressed hexagonal boron nitride

Magnetic field sensing is essential for applications in communication, environmental monitoring, and biomedical diagnostics. Quantum sensors based on solid-state spin defects, such as nitrogen-vacancy centers in diamond or boron vacancies in single-crystal hexagonal boron nitride (hBN), typically require precise alignment between the external magnetic field and the defect's spin quantization axis to achieve reliable sensing. This alignment constraint complicates device integration and hinders scalability. Here, we demonstrate room-temperature optically detected magnetic resonance (ODMR) from negatively charged boron vacancies (VB-) in commercially available hot-pressed polycrystalline hBN. The random grain orientation inherently samples a broad range of spin quantization axes, enabling alignment-free magnetic field detection. Numerical modeling further confirms that sensing remains feasible despite anisotropic sensitivity, establishing hot-pressed hBN as a robust and practical platform for quantum magnetometry. This approach paves the way toward low-cost, scalable, and mechanically stable quantum magnetic field sensors suitable for real-world deployment.

quant-ph↗

arXiv2025

Enhancing Cutoff Energy of Solid High-Harmonic Generation from Bonding Length Perspective

High-harmonic generation (HHG) from solid state offers promising potential for attosecond optics with enhanced efficiency and compact configurations. However, Current implementations face critical limitations imposed by material damage thresholds, directly restricting spectral cutoff energies in nonperturbative regime. In this study, we control the cutoff energy through tailoring the bond length of materials, which is available by experimental strain. Employing real-time time-dependent density theory (rt-TDDFT) simulations, we find that the cutoff energy increases by nearly one third under a bond length compression of 7.5%. Our results reveal that it originates the band gap widening inducing the enhancement of interband cutoff energy, which is material-independent. This work provides novel theoretical insights for optimizing extreme ultraviolet sources, advancing potential applications in attosecond physics.

physics.optics↗

arXiv2025

Occupation-Driven emission asynchronous as a Fundamental Constraint on Solid-State Attosecond Pulses

A newly analytic occupation-resolved theory capturing the temporal structure of attosecond pulses (APs) is derived. We validate it with real-time time-dependent density functional theory and show remarkable temporal confinement of APs with laser intensity in solid state. Using a simplified field-driven electron excitation together with a generalized pre-acceleration picture, the interband emission timing demonstrate intrinsically temporal mismatched with field-synchronous intraband radiation, leading to a nonmonotonic dependence of attosecond pulse width on laser intensity. Our findings not only shed light on the microscopic mechanisms behind solid-state high harmonic generation (HHG), but also establish the fundamental time-domain constraint on solid-state APs independent of material damage thresholds.

physics.optics↗

arXiv2025

Revealing Material-Dependent Bicircular High-Order Harmonic Generation in 2D Semiconductors via Real-Space Trajectories

Solid-state high-order harmonic generation (HHG) presents unique features different from gases.Whereas the gaseous harmonics driven by counter-rotating bicircular (CRB) pulse universally peak at a "magic" field ratio approximately E_2ω:E_ω=1.5:1, crystals exhibit significant material-dependent responses. In monolayer MoS2, the harmonic yield experiences two maxima at the gas-like 1.5:1 ratio, and again in the single-color limit, whereas monolayer hBN shows a monotonic increase as the 2ω component dominates. Combining time-dependent density-functional theory (TDDFT) and a minimal real-space trajectory analysis, we show that these differences arise from the interplay of Bloch velocity and anomalous Hall velocity. The trajectory model quantitatively reproduces the ab-initio results, and offers an intuitive prediction of the harmonics yield without further heavy computation. These insights provide practical guidance for tailoring solid-state HHG and for selecting 2D compounds with desirable responses.

physics.optics↗

arXiv2025

Self-passivation reduces the Fermi level pinning in the metal-semiconductor contacts

The metal-induced gap states (MIGS) are commonly believed to cause the strong Femi level pinning (FLP) in the metal-semiconductors contacts. Here, we unravel unambiguously that the dangling bonds-induced interface states play a crucial role, even comparable with MIGS. The first-principles calculations show that metal-Ge and metal-Si contacts should possess a similar FLP strength if they adopt an identical interface bonding configuration: the reconstructed bonding configuration renders Si and Ge having pinning factors of 0.16 and 0.11, respectively, and the ideal non-reconstructed bonding configuration gives them pinning factors of 0.05 and 0, respectively. We illustrate that Si favors the reconstructed bonding configuration, and Ge favors the ideal non-reconstructed bonding configuration after metal deposition. The self-passivation of the dangling bonds substantially reduces the interface gap states to give a much weaker FLP in the metal-Si contacts than in the metal-Ge contacts. We also demonstrate that the full passivation of the interface dangling bonds can further increase the pinning factor to 0.5 by further reducing the interface gap states. These findings shed new light on alleviating the Femi level pinning to lower the contact resistance for Si and emerging materials towards advanced semiconductor technology.

cond-mat.mtrl-sci↗

arXiv2025

Ultrafast dynamics of atomic correlated disordering in photoinduced VO$_2$

Recent experiments suggest that atomic disordering dynamics are more universal than conventional coherent processes in photoinduced phase transitions (PIPTs), yet its mechanism remains unclear. Using real-time time-dependent density functional theory (rt-TDDFT), we find that, at lower photoexcitation, higher lattice temperature accelerates atomic disordering, which thereby lowers the threshold for phase transition, by thermally exciting more phonons to randomize the lattice vibrations in VO$_2$. Above this threshold, however, we observe that the transition timescale and atomic disordering become temperature-independent since thermally excited lattice vibrations induce a similar evolution of photoexcited holes. Additionally, we show that photoexcitation initially elongates the V-V dimers followed by a rotation with tangential displacements (along the z-axis) mediated by O atoms, resulting in strongly correlated motion along the z-axis. Consequently, atomic disordering is more dominant along the x direction, attributed to the relatively unrestricted motion of V-V dimers along this direction. The motion of V atoms along the z-axis is more constrained, leading to less disorder along the z-axis, which results in a "correlated disorder" phenomenon. This anisotropic disordering in VO$_2$ offers new insights into PIPTs mechanisms, guiding future studies on photoinduced disordered transitions.

cond-mat.mtrl-sci↗

arXiv2025

Raman Forbidden Layer-Breathing Modes in Layered Semiconductor Materials Activated by Phonon and Optical Cavity Effects

We report Raman forbidden layer-breathing modes (LBMs) in layered semiconductor materials (LSMs). The intensity distribution of all observed LBMs depends on layer number, incident light wavelength and refractive index mismatch between LSM and underlying substrate. These results are understood by a Raman scattering theory via the proposed spatial interference model, where the naturally occurring optical and phonon cavities in LSMs enable spatially coherent photon-phonon coupling mediated by the corresponding one-dimensional periodic electronic states. Our work reveals the spatial coherence of photon and phonon fields on the phonon excitation via photon/phonon cavity engineering.

cond-mat.mtrl-sci↗

arXiv2025

Optical spin readout of a silicon color center in the telecom L-band

Silicon-based quantum technologies have gained increasing attention due to their potential for large-scale photonic integration, long spin coherence times, and compatibility with CMOS fabrication. Efficient spin-photon interfaces are crucial for quantum networks, enabling entanglement distribution and information transfer over long distances. While several optically active quantum emitters in silicon have been investigated, no spin-active defect with optical transitions in the telecom L-band-a key wavelength range for low-loss fiber-based communication-has been experimentally demonstrated. Here, we demonstrate the optical detection of spin states in the C center, a carbon-oxygen defect in silicon that exhibits a zero-phonon line at 1571 nm. By combining optical excitation with microwave driving, we achieve optically detected magnetic resonance, enabling spin-state readout via telecom-band optical transitions. These findings provide experimental validation of recent theoretical predictions and mark a significant step toward integrating spin-based quantum functionalities into silicon photonic platforms, paving the way for scalable quantum communication and memory applications in the telecom L-band.

quant-ph↗

arXiv2024

Diverse methods and practical aspects in controlling single semiconductor qubits: a review

Quantum control allows a wide range of quantum operations employed in molecular physics, nuclear magnetic resonance and quantum information processing. Thanks to the existing microelectronics industry, semiconducting qubits, where quantum information is encoded in spin or charge degree freedom of electrons or nuclei in semiconductor quantum dots, constitute a highly competitive candidate for scalable solid-state quantum technologies. In quantum information processing, advanced control techniques are needed to realize quantum manipulations with both high precision and noise resilience. In this review, we first introduce the basics of various widely-used control methods, including resonant excitation, adabatic passage, shortcuts to adiabaticity, composite pulses, and quantum optimal control. Then we review the practical aspects in applying these methods to realize accurate and robust quantum gates for single semiconductor qubits, such as Loss-DiVincenzo spin qubit, spinglet-triplet qubit, exchange-only qubit and charge qubit.

quant-ph↗

arXiv2024

Cavity-enhanced circular dichroism in a van der Waals antiferromagnet

Broken symmetry plays a pivotal role in determining the macroscopic electrical, optical, magnetic, and topological properties of materials. Circular dichroism (CD) has been widely employed to probe broken symmetry in various systems, from small molecules to bulk crystals, but designing CD responses on demand remains a challenge, especially for antiferromagnetic materials. Here, we develop a cavity-enhanced CD technique to sensitively probe the magnetic order and broken symmetry in the van der Waals antiferromagnet FePS3. By introducing interfacial inversion asymmetry in cavity-coupled FePS3 crystals, we demonstrate that the induced CD is strongly coupled with the zig-zag antiferromagnetic order of FePS3 and can be tuned both spectrally and in magnitude by varying the cavity length and FePS3 thickness. Our findings open new avenues for using cavity-modulated CD as a sensitive diagnostic probe to detect weak broken symmetries, particularly at hidden interfaces, and in systems exhibiting hidden spin polarization or strong correlations.

cond-mat.mes-hall↗

arXiv2024

Multi-Wavelength Selective Thermal Emission Enabled by Dual-Layer Localized Surface Plasmon Polaritons

Thermal emission is a ubiquitous electromagnetic wave with an extreme broad spectrum in nature, and controlling thermal emission can be used to develop low-cost and convenient infrared light sources with wavelength tunable in a wide range that is currently difficult to other sources. Conventional metasurfaces are commonly used to control light but lack the flexibility to achieve complex emission spectral profiles and dynamic tuning. Here, we introduce a novel dual-layer metasurface structure with two completely independent layers to achieve a multi-peak thermal emission within the 5-8 μm wavelength range. Simulations and experiments show that this two-layer structure can achieve arbitrary spectral shapes without interfering with multiple resonant modes. This unique configuration presents a promising platform for further exploration in thermal emission engineering, enabling spectral control and dynamic tuning.

physics.optics↗

arXiv2024

The photoinduced hidden metallic phase of monoclinic VO2 driven by local nucleation via a self-amplification process

The insulator-to-metal transition (IMT) in vanadium dioxide (VO2) has garnered extensive attention for its potential applications in ultrafast switches, neuronal network architectures, and storage technologies. However, a significant controversy persists regarding the formation of the IMT, specifically concerning whether a complete structural phase transition from monoclinic (M1) to rutile (R) phase is necessary. Here we employ the real-time time-dependent density functional theory (rt-TDDFT) to track the dynamic evolution of atomic and electronic structures in photoexcited VO2, revealing the emergence of a long-lived monoclinic metal phase (MM) under low electronic excitation. The emergence of the metal phase in the monoclinic structure originates from the dissociation of the local V-V dimer, driven by the self-trapped and self-amplified dynamics of photoexcited holes, rather than by a pure electron-electron correction. On the other hand, the M1-to-R phase transition does appear at higher electronic excitation. Our findings validate the existence of MM phase and provide a comprehensive picture of the IMT in photoexcited VO2.

cond-mat.mtrl-sci↗

arXiv2023

The interface states in gate-all-around transistors (GAAFETs)

The atomic-level structural detail and the quantum effects are becoming crucial to device performance as the emerging advanced transistors, representatively GAAFETs, are scaling down towards sub-3nm nodes. However, a multiscale simulation framework based on atomistic models and ab initio quantum simulation is still absent. Here, we propose such a simulation framework by fulfilling three challenging tasks, i.e., building atomistic all-around interfaces between semiconductor and amorphous gate-oxide, conducting large-scale first-principles calculations on the interface models containing up to 2796 atoms, and finally bridging the state-of-the-art atomic level calculation to commercial TCAD. With this framework, two unnoticed origins of interface states are demonstrated, and their tunability by changing channel size, orientation and geometry is confirmed. The quantitative study of interface states and their effects on device performance explains why the nanosheet channel is preferred in industry. We believe such a bottom-up framework is necessary and promising for the accurate simulation of emerging advanced transistors.

physics.app-ph↗