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Jundong Zhu

Publications and source records attributed to Jundong Zhu.

9 recordsLinked to original sources

Ferroelectric-tunable quantum nonlinearity of chiral Bloch electrons in a moiré system

Sliding ferroelectricity in van der Waals materials shows great potential for designing robust memory devices. However, its thermodynamic behaviors and the coupling with certain quantum effects remain largely unexplored. Here, we demonstrate ferroelectric control over quantum nonlinear transport in a hexagonal boron nitride (hBN) encapsulated twisted double-bilayer graphene moiré heterostructure. The ferroelectricity is attributed to the presence of rhombohedral stacking in the top hBN, confirmed by both electrical transport and optical second harmonic generation (SHG) measurements. Remarkably, the polarization magnitude remains temperature-independent across 1.7-200 K, while nucleation time exhibits thermally activated behavior, decreasing with increasing temperature. Furthermore, we demonstrate a ferroelectric-switchable nonlinear Hall effect, attributed to the chiral scattering induced by Berry curvature, with outstanding fatigue-resistant and nonvolatility, demonstrating direct coupling between sliding ferroelectricity and quantum geometric properties. Our results establish sliding ferroelectrics as a platform for exploring electrically programmable Berry curvature physics.

cond-mat.mes-hall

Observation of Integer and Fractional Chern insulators in high Chern number flatbands

Moiré flatbands with high Chern numbers (C>1) offer opportunities to study the fractional quantum anomalous Hall effects that go beyond the Landau level paradigm with C=1, which remain unexplored yet. Here, we target the novel topological phases in high Chern number flatbands by designing a new moiré system, i.e., twisted rhombohedral trilayer-bilayer graphene. We observe quantized anomalous Hall effects (QAH) with C = 3 at v = 1 and v = 3, demonstrating the high Chern number nature of the flat band from continuum calculations. By fractionally filling the flat band, we observe QAH with C = 2 at even-denominator fractional filling v = 3/2, as well as QAH with C = 3 continuously from v = 1 to the even-denominator v = 3/2 at zero magnetic fields. Most importantly, we observe, for the first time, evidence of an FCI with C = -6/5 at v = 12/5, corresponding to 2/5 filling of a high Chern number flat band with C = -3, verified by both Streda formula analysis and a fractionally QAH. It is also worth noting that Streda formula analysis reveals a signature of another FCI with C = -3/2 at v = 5/2 under finite magnetic fields. Our results demonstrate the tRTBG, which can be naturally extended to other twisted graphene moiré superlattices based on rhombohedral graphene multilayers, as a novel platform for hosting unconventional high Chern number correlated topology in the ultra-strong correlated regime that is beyond the paradigm of fractional phases with C < 1.

cond-mat.str-el

Electric field tunable coupling strength and quantum metric hot spots in a moiré flatband superconductor

Superconductivity in flatband systems has attracted tremendous attention in condensed matter physics. Alternating twisted multilayer graphene presents a compelling multiband system, with a coexistence of Dirac bands and flat bands, for exploring superconductivity. However, the roles of flat bands and dispersive bands played in determining the superconductivity remain elusive. Here, we focus on the alternating twisted quadralayer graphene to reveal unconventional superconducting behaviors by systematically quantifying individual contributions for both the dispersive bands and the flat bands. The superconductivity is robust, with a strong electrical field tunability, a maximum BKT transition temperature of 1.6 K, and high critical magnetic fields beyond the Pauli limit. By analyzing the Landau fan diagram at zero electric displacement fields, we disentangle Dirac bands and flat bands, revealing a Coulomb interaction-induced band broadening effect. We further quantify the electric-field-dependent evolution of the critical temperature and coherence length, and estimate the flat-band Fermi velocity and superfluid stiffness via critical current measurements. Our results demonstrate an electric field tunable coupling strength within the superconducting phase, revealing unconventional properties with vanishing Fermi velocity and large superfluid stiffness. These phenomena, attributed to substantial quantum metric contributions mediated by Dirac band hybridization, offer new insights into the mechanisms underlying unconventional flatband superconductivity in moiré systems.

cond-mat.supr-con

Pronounced orbital-selective electron-electron correlation and electron-phonon coupling in V2Se2O

Orbital-selective many-body effects, in which electrons occupying different orbitals experience distinct interaction strengths, play a crucial role in correlated multiorbital materials. However, these effects usually manifest in a complex manner, obscuring their microscopic origins. Here, by combining angle-resolved photoemission spectroscopy measurements with theoretical calculations, we reveal pronounced orbital selectivity in both electron-electron correlation and electron-phonon coupling in the van der Waals material V2Se2O. Electron correlation induces distinct bandwidth renormalization exclusively in the V d_xy-derived band, while the bands mainly composed of the other d orbitals remain essentially unrenormalized. Orbital-resolved analyses identify that the filling number and the bandwidth are decisive factors governing orbital-dependent correlation. Simultaneously, the d_(xz/yz)-derived band exhibits a sharp kink anomaly, arising from enhanced coupling to high-energy phonon modes dominated by oxygen vibrations. Such pronounced orbital selectivity positions V2Se2O as a rare and prototypical platform for unravelling the microscopic mechanisms of orbital-selective electron-electron and electron-phonon interactions, and offers guiding principles for the design of correlated multiorbital materials.

cond-mat.str-el

Probing band topology in ABAB and ABBA stacked twisted double bilayer graphene

Twisted graphene moire superlattice has been demonstrated as an exotic platform for investigating correlated states and nontrivial topology. Among the moire family, twisted double bilayer graphene (TDBG) is a tunable flat band system expected to show stacking-dependent topological properties. However, electron correlations and the band topology are usually intertwined in the flat band limit, rendering the unique topological property due to stacking still elusive. Focusing on a large-angle TDBG with weak electron correlations, here we probe the Landau level (LL) spectra in two differently stacked TDBG, i.e. ABBA- and ABAB-TDBG, to unveil their distinct topological properties. For ABBA-TDBG, we observe non-trivial topology at zero electric displacement filed, evident from both the emergence of Chern bands from half fillings and the closure of gap at CNP above a critical magnetic field. For ABAB-TDBG, by contrast, we find that the moire band is topologically trivial, supported by the absence of LLs from half fillings and the persistence of the gap at CNP above the critical magnetic fields. In addition, we also observe an evolution of the trivial-to-nontrivial topological transition at finite D fields, confirmed by the emerged Landau fans originating from quarter filling v = 1. Our result demonstrates, for the first time, the unique stacking-dependent topology in TDBG, offering a promising avenue for future investigations on topological states in correlated systems.

cond-mat.mes-hall

Observation of electrical high-harmonic generation

High-harmonic generation (HHG), an extreme nonlinear effect, introduces an unprecedented paradigm to detect emergent quantum phases and electron dynamics inconceivable in the framework of linear and low-order nonlinear processes. As an important manifestation, the optical HHG (o-HHG) enables extraordinary opportunities to underpin attosecond physics. In addition to nonlinear optics, emerging nonlinear electric transport has been demonstrated recently and opens new paradigms to probe quantum phase transition, symmetry breaking, band geometrical and topological properties. Thus far, only electrical second-/third-harmonic generation in perturbative regime has been elucidated, while the electrical HHG (e-HHG) that can advance to extreme non-perturbative physics remains elusive. Here we report the observation of e-HHG up to 300th-order. Remarkably, the e-HHG shows a clear non-perturbative character and exhibits periodic oscillations with the reciprocal of driving current. Further, theoretical simulations corroborate the experiments, suggesting the contribution of singular distribution of Berry curvature near band edges. Our results demonstrate e-HHG in extreme nonlinear regime and may shed light on a plethora of exotic physics and applications, such as extreme non-equilibrium quantum phenomena, ultra-fast and coherent electrical signal generations and detections.

cond-mat.mes-hall

Sliding ferroelectric memories and synapses

Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap photovoltaic devices. Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroelectric parent monolayers. Although notable progress has been witnessed in understanding its fundamental properties, functional devices based on sliding ferroelectrics, the key touchstone toward applications, remain elusive. Here, we demonstrate the rewritable, non-volatile memory devices at room-temperature utilizing a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer molybdenum disulfide. The 2D sliding ferroelectric memories (SFeMs) show superior performances with a large memory window of >8V, a high conductance ratio of above 106, a long retention time of >10 years, and a programming endurance greater than 104 cycles. Remarkably, flexible SFeMs are achieved with state-of-the-art performances competitive to their rigid counterparts and maintain their performances post bending over 103 cycles. Furthermore, synapse-specific Hebbian forms of plasticity and image recognition with a high accuracy of 97.81% are demonstrated based on flexible SFeMs. Our work demonstrates the sliding ferroelectric memories and synaptic plasticity on both rigid and flexible substrates, highlighting the great potential of sliding ferroelectrics for emerging technological applications in brain-inspired in-memory computing, edge intelligence and energy-efficient wearable electronics.

cond-mat.mes-hall

Interplay of Landau quantization and interminivalley scatterings in a weakly coupled moiré superlattice

Double layer quantum systems are promising platforms for realizing novel quantum phases. Here, we report a study of quantum oscillations (QOs) in a weakly coupled double layer system, composed of a large angle twisted double bilayer graphene (TDBG). We observe two different QOs at low temperature, one with a periodicity in carrier density (n), i.e. Shubnikov de Haas oscillation (SdHO) due to Landau quantization, and the other one in displacement field (D), resulting a grid pattern. We quantify the interlayer coupling strength by measuring the interlayer capacitance from the grid pattern with a capacitance model, revealing an electron hole asymmetry. At high temperature when SdHO are thermal smeared, we observe resistance peaks when LLs from two minivalleys in the moiré Brillion zone are aligned, regardless of carrier density; eventually, it results in a two fold increase of oscillating frequency in D, serving as a smoking gun evidence of the magneto intersubband oscillations (MISO) in a double layer system. The temperature dependence of MISO suggests electron-electron interaction between two minivalleys play a crucial rule in the scattering, and the scattering times obtained from MISO thermal damping are found to be correlated with the interlayer coupling strength. Our study reveals an intriguing interplay among Landau quantization, moiré band structure, and scatterings.

cond-mat.mes-hall

Electron-infrared phonon coupling in ABC trilayer graphene

Stacking order plays a crucial role in determining the crystal symmetry and has significant impacts on electronic, optical, magnetic, and topological properties. Electron-phonon coupling, which is central to a wide range of intriguing quantum phenomena, is expected to be intricately connected with stacking order. Understanding the stacking order-dependent electron-phonon coupling is essential for understanding peculiar physical phenomena associated with electron-phonon coupling, such as superconductivity and charge density waves. In this study, we investigate the effect of stacking order on electron-infrared phonon coupling in graphene trilayers. By using gate-tunable Raman spectroscopy and excitation frequency-dependent near-field infrared nanoscopy, we show that rhombohedral ABC-stacked trilayer graphene has a significantly stronger electron-infrared phonon coupling strength than the Bernal ABA-stacked trilayer graphene. Our findings provide novel insights into the superconductivity and other fundamental physical properties of rhombohedral ABC-stacked trilayer graphene, and can enable nondestructive and high-throughput imaging of trilayer graphene stacking order using Raman scattering.

physics.optics