arXiv subjects

Junfeng Ren

Publications and source records attributed to Junfeng Ren.

5 recordsLinked to original sources

arXiv2026

Symmetry enforced quantum spin Hall effect in Altermagnets

The quantum spin Hall effect (QSHE) has attracted widespread attention due to its dissipationless transport, which is protected by non-trivial topological invariants and helical edge states. Because even weak magnetic disorder can destroy the stability of topological quantum states, current research on the QSHE has primarily focused on non-magnetic materials. In this work, we extend the research scope of the QSHE to altermagnets. We establish the relevant symmetry constraints and identify all magnetic point groups that can realize the altermagnetic QSHE. Symmetry analysis reveals that pronounced spin-valley locking or spin-valley-layer locking universally exists in these systems. The concerted interaction between band inversion and spin-valley locking collectively gives rise to the helical edge states. Using first-principles calculations and theoretical models, we demonstrate that monolayer Nb2SeTeO exhibits an altermagnetic QSHE characterized by spin-valley locking, while bilayer Hf3Se3Te2 manifests an altermagnetic QSHE featuring spin-valley-layer locking. This work clarifies the intrinsic symmetry correlation between altermagnetism and quantum spin Hall topological phases, providing a brand-new theoretical perspective and research platform for exploring magnetic topological systems and developing next-generation spintronic devices

cond-mat.mes-hall↗

arXiv2026

Strain-enhanced edge ferromagnetism and bipolar magnetic semiconducting behavior in Janus graphene nanoribbons

Using first-principles density functional theory and determinant quantum Monte Carlo methods, we show that Janus graphene nanoribbons with topological defect arrays ($m=2$) exhibit robust intrinsic ferromagnetism across widths $W=2-6$, with bandgaps exceeding 200 $meV$ and stable ferromagnetic ground states. Notably, uniaxial tensile strain significantly enhances their ferromagnetic properties: at 25\% strain, the Curie temperature increases to $222K$, a fivefold improvement over unstrained systems and the highest reported for graphene-based nanoribbons. Strain also induces a reversible transition to a bipolar magnetic semiconductor, with spin-flipped valence and conduction band edges beyond 10\% strain. This dual functionality, strain-enhanced ferromagnetism and strain-induced spin flip, stems from strain-modulated $p_{z}$ orbital hybridization and strong direct exchange interaction. Among these, $W=5$ Janus graphene nanoribbons emerge as potential candidates for room-temperature spintronic devices and strain-programmable quantum transport systems.

cond-mat.mtrl-sci↗

arXiv2025

Lithium and Vanadium Intercalation into Bilayer V2Se2O: Ferrimagnetic-Ferroelastic Multiferroics and Anomalous and Spin Transport

Spin splitting in emerging altermagnets is non-relativistic and momentum-dependent, yet energy-independent, and localized in momentum space, posing challenges for practical applications. Here, we propose an intercalation-driven paradigm for altermagnets to attain ameliorative electronic structures, multiferroic characteristics, and anomalous and spin transport functionalities. As a representative system, we investigate electrochemistry- and self-intercalated V2Se2O bilayers, building on the recently reported room-temperature K- and Rb-intercalated V2Se2O family [Nat. Phys. 2025, 21, 754; Nat. Phys. 2025, 21, 760], utilizing density functional theory, Wannier function analyses, Monte Carlo simulations, and non-equilibrium Green function methods. Intercalation induces room-temperature intralayer ferrimagnetic and interlayer ferromagnetic order (358 K for Li-intercalation and 773 K for V-intercalation), ferroelasticity (~1 % signal intensity), in-plane uniaxial magnetic anisotropy, and metallization, while also modifying the anomalous Hall effect. Notably, Li- and V-intercalated V2Se2O bilayers exhibit enhanced spin splitting and half-metallic behavior, respectively, yielding near-perfect spin filtering efficiency. Intercalation substantially enhances spin transport in V2Se2O-based devices, enabling giant magnetoresistance (877 %), ultra-high thermal tunneling magnetoresistance (~12000 %), and observable spin Seebeck and temperature negative differential resistance effects. This intercalation-driven paradigm expands altermagnetic functionalities through multifunctional integration, offering promising avenues for advanced, miniaturized, room-temperature exploitation of anomalous, electron, and spin transport properties.

cond-mat.mtrl-sci↗

arXiv2023

Different phase leads to different transport behavior in Pb$_9$Cu(PO$_4$)$_6$O compounds

The recent claimed room-temperature superconductivity in Cu-doped lead apatite at ambient pressure are under highly debate. To identify its physical origin, we studied the crystal structures, energy band structures, lattice dynamics and magnetic properties of the parent Pb$_{10}$(PO$_4$)$_6$O compound, in which two different phases of the LK-99 compound are analyzed in detail. Our results show that the Pb$_{10}$(PO$_4$)$_6$O compound is an indirect band gap semiconductor, where Cu doping at the 4$f$ site of Pb leads to a semiconducting to half-metallic transition. Two half-filled flat bands spanning the Fermi energy levels are present in the 4$f$-phase of LK-99, which are mainly formed by hybridization of the $d_{x^2-y^2}$ and $d_{zy}$ orbitals of Cu with the 2$p$ orbitals of O. In addition, 6$h$-phase of LK-99 always has spin polarity at the bottom of the conduction band and at the top of the valence band, making the material a bipolar magnetic semiconductor. Our results are basically consistent with the recent experimental transport properties of LK-99 posted on arXiv:2308.05778.

cond-mat.supr-con↗

arXiv2012

Non-adiabatic molecular dynamics simulation for carrier transport in a molecular monolayer

We present a new approach to carry out non-adiabatic molecular dynamics to study the carrier mobility in an organic monolayer. This approach allows the calculation of a 4802 atom system for 825 fs in about three hours using 51,744 computer cores while maintaining a plane wave pseudopotential density functional theory level accuracy for the Hamiltonian. Our simulation on a pentathiophene butyric acid monolayer reveals a previously unknown new mechanism for the carrier transport in such systems: the hole wave functions are localized by thermo fluctuation induced disorder, while its transport is via charge transfer during state energy crossing. The simulation also shows that the system is not in thermo dynamic equilibrium in terms of adiabatic state populations according to Boltzmann distribution. Our simulation is achieved by introducing a linear time dependence approximation of the Hamiltonian within a fs time interval, and by using the charge patching method to yield the Hamiltonian, and overlapping fragment method to diagonalize the Hamiltonian matrix.

cond-mat.mtrl-sci↗