arXiv subjects

Junhai Ren

Publications and source records attributed to Junhai Ren.

4 recordsLinked to original sources

arXiv2024

Molecular Beam Epitaxy Growth and Doping Modulation of Topological Semimetal NiTe$_2$

In this study, high-quality thin films of the topological semimetal phase NiTe$_2$ were prepared using molecular beam epitaxy (MBE) technique, confirmed through X-ray diffraction with pronounced Laue oscillations. Electrical transport experiments reveal that thick films have properties similar to bulk materials. By employing co-deposition, we introduced either magnetic or non-magnetic elements during the growth of thinner films, significantly altering their electrical properties. Notably, magnetic element Cr induces long-range ferromagnetic ordering, leading to the observation of significant anomalous Hall effect in NiTe2 thin films. The Hall conductivity remains nearly constant well below the Curie temperature, indicating the correlation with the intrinsic topological nature of the band structure. Theoretical first principles band calculations support the generation of the Weyl semimetal state in the material through magnetic doping. These findings pave the way for exploring more magnetic Weyl semimetal materials and related low-dimensional quantum devices based on topological semimetal materials.

cond-mat.mtrl-sci↗

arXiv2023

Insulator-to-metal Mott transition facilitated by lattice deformation in monolayer $\alpha$-RuCl$_3$ on graphite

Creating heterostructures with graphene/graphite is a practical method for charge-doping $\alpha$-RuCl$_3$, but not sufficient to cause the insulator-to-metal transition. In this study, detailed scanning tunneling microscopy/spectroscopy measurements on $\alpha$-RuCl$_3$ with various lattice deformations reveal that both in-plane and out-of-plane lattice distortions may collapse the Mott-gap in the case of monolayer $\alpha$-RuCl$_3$ in proximity to graphite, but have little impact on its bulk form alone. In the Mott-Hubbard framework, the transition is attributed to the lattice distortion-facilitated substantial modulation of the electron correlation parameter. Observation of the orbital textures on a highly compressed monolayer $\alpha$-RuCl$_3$ flake on graphite provides valuable evidence that electrons are efficiently transferred from the heterointerface into Cl3$p$ orbitals under the lattice distortion. It is believed that the splitting of Ru $t_{2g}$ bands within the trigonal distortion of Ru-Cl-Ru octahedra bonds generated the electrons transfer pathways. The increase of the Cl3$p$ states enhance the hopping integral in the Mott-Hubbard bands, resulting in the Mott-transition. These findings suggest a new route for implementing the insulator-to-metal transition upon doping in $\alpha$-RuCl$_3$ by deforming the lattice in addition to the formation of heterostructure.

cond-mat.str-el↗

arXiv2023

Tunneling spectroscopic signatures of charge doping and associated Mott transition in $α$-RuCl${_3}$ in proximity to graphite

The layered Mott insulator $α$-RuCl${_3}$ has been extensively studied as a potential Kitaev quantum spin liquid candidate. Here, by constructing heterostructures with graphite, we employed electron tunneling measurements on few-layer $α$-RuCl${_3}$ using a scanning tunneling microscopy/spectroscopy. Characteristic tunneling spectra were detected on $α$-RuCl${_3}$ layers in proximity to graphite. In the single-layer $α$-RuCl${_3}$ in direct contact with graphite, distinct states in the Mott-gap regime were observed. The in-gap states are demonstrated to be closely related to the electron orbitals in $α$-RuCl${_3}$ and graphite, and to be sensitive to interfacial coupling, where a hybridization at the heterointerface is hypothesized. The in-gap states are also thought of as a charge reservoir for weakly doping the $α$-RuCl${_3}$ upper-layers. It demonstrated that the weak doping effect causes a considerable decrease in the Mott-gap within the upper-layers, suggesting that an unconventional Mott-transition is occurring in these layers. The results show that the heterostructure comprised of $α$-RuCl${_3}$ and graphite is a good platform for investigating the doping physics in $α$-RuCl${_3}$. Therefore, tunneling into such a doped system is a useful probe for studying otherwise insulating spin-liquid candidates.

cond-mat.str-el↗

arXiv2019

Evidence of charge density wave with anisotropic gap in monolayer VTe$_2$ film

We report experimental evidence of charge density wave (CDW) transition in monolayer 1T-VTe$_2$ film. 4$\times$4 reconstruction peaks are observed by low energy electron diffraction below the transition temperature $T_{CDW}$ = 186 K. Angle-resolved photoemission spectroscopy measurements reveal arc-like pockets with anisotropic CDW gaps up to 50 meV. The anisotropic CDW gap is attributed to the imperfect nesting of the CDW wave vector, and first-principles calculations reveal phonon softening at the same vector, suggesting the important roles of Fermi surface nesting and electron-phonon interaction in the CDW mechanism.

cond-mat.mtrl-sci↗