arXiv subjects

Junhyeok Bang

Publications and source records attributed to Junhyeok Bang.

6 recordsLinked to original sources

arXiv2026

Hot carrier diffusion-assisted ideal carrier multiplication in monolayer MoSe2

Carrier multiplication (CM), the process of generating multiple charge carriers from a single photon, offers an opportunity to exceed the Shockley-Queisser limit in photovoltaic applications. Despite extensive research, no material has yet achieved ideal CM efficiency, primarily owing to significant energy losses from carrier-lattice scattering. In this study, we demonstrate that monolayer MoSe2 can attain the theoretical maximum CM efficiency permitted by energy-momentum conservation principle, using ultrafast transient absorption spectroscopy. By resolving the scatter-free ballistic transport of hot carriers and validating our findings with first-principles calculations, we identify the cornerstone of optimal CM in monolayer MoSe2: superior hot-carrier dynamics characterized by suppressed energy dissipation via minimized carrier-lattice scattering, and the availability of abundant CM pathways facilitated by 2Eg band nesting. Comparative analysis with bulk MoSe2 further emphasizes the enhanced CM efficiency in the monolayer, attributed by superior hot-carrier diffusion and access to additional CM pathways. These results position monolayer MoSe2 as a promising candidate for high-performance optoelectronic applications, providing a robust platform for next-generation energy conversion technologies.

cond-mat.mes-hall↗

arXiv2026

Unfolding Bloch States in Disordered Systems

In crystalline solids, disorder breaks translational symmetry and obscures k-resolved Bloch states, limiting an accurate description of wavefunction-based observables. In this work, we present a method that unfolds not only the band structures but also the corresponding Bloch states in disordered systems, going beyond conventional band-unfolding techniques. As a prototype application, we study defective graphene and demonstrate the capabilities by capturing key wavefunction-level responses, including disorder-driven redistribution of Berry curvature.

cond-mat.mtrl-sci↗

arXiv2025

Preferred Basis in Coupled Electron-Nuclear Dynamics

Beyond the adiabatic regime, our understanding of quantum dynamics in coupled systems remains limited, and the choice of representation continues to obscure physical interpretation and simulation accuracy. Here we propose a natural and efficient basis for electron nuclear dynamics by drawing on the concepts of pointer and preferred states from decoherence theory, adapted to systems where electrons and nuclei interact strongly. Within this framework, we show that 1) the independent dynamics exploited by mixed quantum classical (MQC) methods is best understood as a manifestation of entanglement viewed in a preferred basis, rather than a consequence of decoherence, and 2) the adiabatic Born Oppenheimer states satisfy the conditions of an approximate preferred basis. This perspective reconciles widely used approximations with a more fundamental structure of the theory and provides a systematic route to more reliable MQC strategies. In effect, we revisit MQC methods through the lens of preferred states, clarifying when they succeed and how they can be improved.

quant-ph↗

arXiv2020

Phase Transition in a Memristive Suspended MoS2 Monolayer Probed by Opto- and Electro-Mechanics

Semiconducting monolayer of 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H-1T phase transition in a suspended 2D monolayer membrane of MoS2. Electronic transport shows unexpected memristive properties in the MoS2 membrane, in the absence of any external dopants. A strong mechanical softening of the membrane is measured concurrently and may only be related to the phase 2H-1T phase transition which imposes a 3percent directional elongation of the topological 1T phase with respect to the semiconducting 2H. We note that only a few percent 2H- 1T phase switching is sufficient to observe measurable memristive effects. Our experimental results combined with First-principles total energy calculations indicate that sulfur vacancy diffusion plays a key role in the initial nucleation of the phase transition. Our study clearly shows that nanomechanics represents an ultrasensitive technique to probe the crystal phase transition in 2D materials or thin membranes. Finally, a better control of the microscopic mechanisms responsible for the observed memristive effect in MoS2 is important for the implementation of future devices.

cond-mat.mes-hall↗

arXiv2016

Carrier Multiplication-Induced Structural Change during Ultrafast Carrier Relaxation and Non-Thermal Phase Transition in Semiconductors

While being extensively studied as an important physical process to alter exciton population in nanostructures at fs time scale, carrier multiplication has not been considered seriously as a major mechanism for phase transition. Real-time time-dependent density functional theory study of Ge2Sb2Te5 reveals that carrier multiplication can induce ultrafast phase transition in solid state despite that the lattice remains cold. The results also unify the experimental findings in other semiconductors for which the explanation remains to be the 30-year old phenomenological plasma annealing model.

cond-mat.mtrl-sci↗

arXiv2010

Localization and One-Parameter Scaling in Hydrogenated Graphene

We report a metal-insulator transition in disordered graphene with low coverages of hydrogen atoms. Hydrogen interacting with graphene creates short-range disorder and localizes states near the neutrality point. The energy range of localization grows with increasing of H concentration. Calculations show that the conductances through low-energy propagating channels decay exponentially with sample size and are well fitted by one-parameter scaling function, similar to a disorder-driven metal-insulator transition in 2-dimensional disordered systems.

cond-mat.mes-hall↗