arXiv subjects

Junichi Shiogai

Publications and source records attributed to Junichi Shiogai.

18 recordsLinked to original sources

arXiv2026

Thickness dependence of diode efficiency in superconducting Fe(Se,Te)/FeTe thin-film heterostructure devices

The superconducting diode effect (SDE) is a nonreciprocal transport phenomenon, in which the superconducting critical current density depends on the polarity of the current. It has attracted recent attention because of its potential applications to a rectifier without energy dissipation. While SDE has been observed in a wide range of superconducting materials with broken inversion symmetry as well as thin-film heterostructures, the microscopic origin linking structural inversion asymmetry of electronic band, spin-orbit interaction, and vortex pinning remains to be clarified. In this study, we investigate SDE in Fe(Se,Te)/FeTe heterostructure devices as a function of the superconducting Fe(Se,Te) layer thickness tFST to elucidate the role of structural inversion asymmetry on the vortex-induced SDE. We find that the SDE efficiency monotonically increases with increasing tFST, which can be understood by considering that the band bending in the bulk Fe(Se,Te) layer induces the structural inversion asymmetry and thus, the Rashba spin-orbit interaction. In addition, we demonstrate almost 100% rectification for the Fe(Se,Te)/FeTe heterostructure devices in half- and full-wave oscillation configurations. Our findings point out the importance of structural architecture for realization of highly efficient SDE devices based on superconducting thin-film heterostructures.

cond-mat.supr-con↗

arXiv2026

Thermodynamic stability of twisted domains in AgCrSe$_{2}$ thin films grown on lattice-matched YSZ(111) substrate

Control of structural domains in epitaxial thin films of functional materials is a fundamental technique to utilize their intrinsic physical and chemical properties in solid-state devices. In this study, we report on suppression of twisted-domain formation in thin-film growth of polar magnetic semiconductor AgCrSe$_{2}$ using pulsed-laser deposition. In exploring concomitant optimized growth temperature and Ag/Cr composition ratio of supply, we find the critical growth temperature ($T\mathrm{_{sub}}$) for obtaining single 60$^{\circ}$ domain in c-axis oriented AgCrSe$_{2}$ thin film on a lattice-matched (111) plane of the yttria-stabilized zirconia substrate. At temperatures below and above the critical $T\mathrm{_{sub}}$, metastable 0$^{\circ}$ domain in addition to the 60$^{\circ}$ domain emerges, indicating delicate energy balance of thermodynamic stability for obtaining the single-domain structure. Surface structural analysis using time-of-flight low-energy atom scattering spectroscopy reveals the presence of two polar orientations along $+Z$ and $-Z$ directions. These findings provide valuable insights into the thin-film growth mechanisms for a family of two-dimensional compounds with rhombohedral lattices.

cond-mat.mtrl-sci↗

arXiv2025

Quantitative imaging of nonlinear spin-wave propagation using diamond quantum sensors

Spin waves propagating in magnetic materials exhibit nonlinear behavior at large amplitudes due to the competition between excitation and relaxation, providing an attractive platform for exploring nonlinear wave dynamics. In particular, spin waves with a non-zero wavenumber that carry momentum undergo nonlinear relaxation and experience wavenumber modulation in the nonlinear regime. This nonlinearity has been observed experimentally, for example in S. R. Lake et al., Phys. Rev. Appl. 17, 034010 (2022), but a quantitative comparison with theory has not yet been carried out. Here, We image nonlinear spin-wave propagation in two yttrium iron garnet thin films with distinct spin-wave decay rates using a wide-field quantum diamond microscope. We obtain quantitative distributions of spin-wave amplitude and phase as a function of the excitation microwave strength. As a result, we observe a threshold in the spin-wave amplitude beyond which nonlinear effects become evident and confirm that this threshold is consistent with theoretical predictions based on four-magnon scattering for both samples. Moreover, as the amplitude of the spin waves increases, we observe modulation of the wavenumber across the field of view. We attribute this modulation primarily to a reduction in the saturation magnetization caused by incoherent spin waves generated by multi-magnon scattering. Our quantitative measurements provide a pathway for visualizing nonlinear spin-wave dynamics and are crucial for deepening our understanding of the underlying mechanisms.

cond-mat.mes-hall↗

arXiv2025

Longitudinal spin current absorption in bilayers composed of ferromagnetic and highly-resistive non-magnetic layers

Spin Hall magnetoresistance (SMR) is an intriguing spin-dependent transport phenomenon in bilayers consisting of non-magnetic and magnetic layers. Here, we report on the influence of longitudinal spin current absorption by the magnetic layer on SMR in bilayers composed of Co$_{20}$Fe$_{60}$B$_{20}$ (CoFeB) and epitaxial SrIrO$_{3}$, where SrIrO$_{3}$ is used as a highly-resistive spin current source. We observed a clear SMR signal and an enhancement in the SMR ratio with increasing CoFeB layer thickness, in qualitative agreement with an SMR model that incorporates the spin current absorption. The effective spin Hall angle is corrected from 0.07 to 0.12 with consideration of the spin current absorption, corresponding to a relative correction of ~71%. Our findings highlight the pronounced impact of the spin current absorption by the magnetic layer on the SMR mechanism when employing highly-resistive non-magnetic layer such as SrIrO$_{3}$, as well as other emerging quantum materials.

cond-mat.mes-hall↗

arXiv2025

Effect of crystallinity on spin-orbit torque in 5$\textit{d}$ iridium oxide IrO$_{2}$

The 5$\textit{d}$ transition-metal oxides provide an intriguing platform for generating an efficient spin current due to a unique electronic structure dominated by 5d electrons with strong spin-orbit coupling. Here, we report on the effect of crystallinity on current-driven spin-orbit torque (SOT) in binary 5$\textit{d}$ iridium oxide IrO$_{2}$ thin films by controlling amorphous, polycrystalline, and epitaxial states. By conducting harmonic Hall measurement in bilayers composed of ferromagnetic Co$_{20}$Fe$_{60}$B$_{20}$ and IrO$_{2}$, we find that dampinglike (DL) SOT is larger than fieldlike SOT for all the samples. We also demonstrate that both electrical resistivity and the DL SOT efficiency increase in order of epitaxial, polycrystalline, and amorphous IrO$_{2}$. Despite their different electrical conductivities, spin Hall conductivities of the three states of the IrO$_{2}$ layer are found to be nearly constant, which is consistent with the intrinsic regime of the spin Hall effect scaling relation. Our results highlight the important role that crystallinity plays in the spin-current generation, leading to the potential technological development of spintronic devices based on the 5$\textit{d}$ transition-metal oxides.

cond-mat.mtrl-sci↗

arXiv2025

Stoichiometry control and epitaxial growth of AgCrSe2 thin films by pulsed-laser deposition

We report on epitaxial growth in thin-film synthesis of a polar magnetic semiconductor AgCrSe2 on lattice-matched yttria-stabilized zirconia (111) substrate by pulsed-layer deposition (PLD). By using Ag-rich PLD target to compensate for Ag deficiency in thin films, the nucleation of impurity phases is suppressed, resulting in the c-axis-oriented and single-phase AgCrSe2 thin film. Structural analysis using x-ray diffraction and cross-sectional scanning transmission electron microscopy reveals epitaxial growth with the presence of both twisted and polar domains. Optical absorbance spectrum and magnetization measurements show absorption edge at around 0.84 eV and magnetic transition temperature at 41 K, respectively. These values are consistent with the reported values of direct bandgap and Néel temperature of bulk AgCrSe2, reflecting a single-phase and stoichiometric feature of the obtained film. Our demonstration of epitaxial thin-film growth of AgCrSe2 serves as a bedrock for exploration of its potential thermoelectric and spintronic functionalities at surface or heterointerfaces.

cond-mat.mtrl-sci↗

arXiv2025

A scaling relation of vortex-induced rectification effects in a superconducting thin-film heterostructure

Supercurrent rectification, nonreciprocal response of superconducting properties sensitive to the polarity of bias and magnetic field, has attracted growing interest as an ideal diode. While the superconducting rectification effect is a consequence of the asymmetric vortex pinning, the mechanisms to develop its asymmetric potentials have been a subject of ongoing debate, mainly focusing on microscopic breaking of spatial inversion symmetry and macroscopic imbalance of the sample structure. Here, we report on comparative study of the superconducting diode effect and nonreciprocal resistance in a superconducting Fe(Se,Te)/FeTe heterostructure. In normal state, we observe finite nonreciprocal resistance as a hallmark of the spin-orbit interaction with structural inversion asymmetry. In the superconducting state, we find that the strongly enhanced nonreciprocal coefficient in transition regime is directly coupled to the superconducting diode efficiency through a universal scaling law, indicating the role of spin-momentum-locked state on the asymmetric pinning potential. Our findings, providing a unified picture of the superconducting rectification, pave the way for functionalizing superconducting diode devices.

cond-mat.supr-con↗

arXiv2025

Engineered substrates for domain control in CrSe thin-film growth: Single-domain formation on lattice-matched YSZ(111) substrate

Epitaxial thin-film growth is a versatile and powerful technique for achieving a precise control of composition, stabilizing non-equilibrium phases, tailoring growth orientation, as well as forming heterointerfaces of various quantum materials. For synthesis of highly crystalline thin films, in-depth understanding of epitaxial relationship between the desired thin film and the single-crystalline substrates is necessary. In this study, we investigate epitaxial relationship in thin-film growth of triangular-lattice antiferromagnet CrSe on the (001) plane of Al2O3 and the lattice-matched (111) plane of yttria-stabilized zirconia (YSZ) substrates. Structural characterization using out-of-plane and in-plane x-ray diffraction shows that the presence of 19.1o-twisted domains of CrSe significantly dominates the aligned domain on the Al2O3 substrate while it reveals a single-domain formation on the YSZ substrate. The stability of the 19.1o-twisted domain rather than the aligned domain can be explained by rotational commensurate epitaxy, which is well reproduced by density functional theory calculations. The single-domain CrSe thin film on the YSZ substrate exhibits a superior metallic conductivity compared to the twisted-domain thin film on the Al2O3 substrate, implying contribution of the grain boundary scattering mechanism to electrical transport.

cond-mat.mtrl-sci↗

arXiv2025

Suppression of ferromagnetism in rippled La$_{2/3}$Sr$_{1/3}$MnO$_3$ membrane with process-induced strain prepared by epitaxial lift-off technique

Transition metal oxides are a platform for exploring strain-engineered intriguing physical properties and developing spintronic or flexible electronic functionalities owing to strong coupling of spin, charge and lattice degrees of freedom. In this study, we exemplify the strain-engineered magnetism of La$_{2/3}$Sr$_{1/3}$MnO$_3$ in freestanding and rippled membrane forms without and with process-induced strain, respectively, prepared by epitaxial lift-off technique. We find that the deposition of Pt/Ti stressor suppresses the crack formation in the lift-off process and induces a ripple structure in the La$_{2/3}$Sr$_{1/3}$MnO$_3$ membrane. Laser micrograph and Raman spectroscopy show a ripple period of about 30 um and a height of a few um, where alternating convex and concave structures are subjected to tensile strain of 0.6% and compressive strain of 0.5%, respectively. While the freestanding La$_{2/3}$Sr$_{1/3}$MnO$_3$ membrane exhibits room-temperature ferromagnetism, the macroscopic magnetic transition temperature (TC) of the rippled membrane is reduced by as large as 27%. Temperature-variable Kerr microscopy observation in the rippled membrane reveals that the spatial variation of TC to be approximately 4% of the macroscopic TC, which coincides with the local strains at convex and concave structures. The large reduction of macroscopic TC in the rippled membrane may be ascribed to the lattice disorders due to strain gradient. Our demonstration of tuning ferromagnetism by the ripple structure validates the high potential of the process-induced strain in epitaxial lift-off technique and paves the way for strain-mediated emerging physical properties in various transition metal oxides.

cond-mat.mtrl-sci↗

arXiv2024

Wideband wide-field imaging of spin-wave propagation using diamond quantum sensors

Imaging spin-wave propagation in magnetic materials in a wide frequency range is crucial for understanding and applying spin-wave dynamics. Recently, nitrogen-vacancy (NV) centers in diamond have attracted attention as sensors capable of quantitatively measuring the amplitude and phase of coherent spin waves. However, the conventional sensing protocol has been limited to detecting spin waves whose frequencies match the resonance frequency of the NV spins. We demonstrate that by utilizing the AC Zeeman effect, it is possible to image spin waves propagating in a yttrium iron garnet (YIG) thin film over a wide frequency range up to a maximum detuning of 567 MHz without changing the external magnetic field. Our results expand the applicability of NV centers for spin-wave sensing and pave the way for quantitative investigations of the dynamics in various magnetic materials, such as metallic ferromagnets and van der Waals magnets.

cond-mat.mes-hall↗

arXiv2024

Non-coplanar spin structure in a metallic thin film of triangular lattice antiferromagnet CrSe

An antiferromagnetic metal with two-dimensional triangular network offers a unique playground of intriguing magneto-transport properties and functionalities stemming from interplay between conducting electrons and intricate magnetic phases. A NiAs-type CrSe is one of the candidates owing to alternate stackings of Cr and Se triangular atomic networks in its crystal structure. While fabrication of CrSe thin films is indispensable to develop functional devices, studies on its thin-film properties have been limited to date due to the lack of metallic samples. Here, we report on realization of metallic conductivities of CrSe thin films, which allows to investigate their intrinsic magneto-transport properties. The metallic sample exhibits co-occurrence of a weak ferromagnetism with perpendicular magnetic anisotropy and the antiferromagnetic behavior, indicating the presence of non-coplanar spin structures. In addition, control of polarity and tilting angle of the non-coplanar spin structure is accomplished by a sign of cooling magnetic fields. The observed non-coplanar spin structure, which can be a source of emergent magnetic field acting on the conducting electrons, highlights a high potential of the triangular lattice antiferromagnet and provide unique platform for functional thin-film devices composed of NiAs-type derivative Cr chalcogenides and pnictides.

cond-mat.mtrl-sci↗

arXiv2023

Impact of epitaxial strain relaxation on ferromagnetism in a freestanding La2/3Sr1/3MnO3 membrane

Manganite perovskites host emerging physical properties of strongly-correlated electrons with charge, spin, and lattice degrees of freedom. Using epitaxial lift-off technique, we report enhancement of saturation magnetization and ferromagnetic transition temperature of the freestanding La2/3Sr1/3MnO3 membrane compared with the as-grown film on SrTiO3 substrate involving lateral tensile strain. Structural analysis reveals shrinkage of unit-cell volume by tensile strain relaxation in the freestanding membrane, which causes enhancement of the ferromagnetic interaction. The impact of the microscopic lattice deformation on the ferromagnetism of La2/3Sr1/3MnO3 indicates a high potential of this material for flexible electronics application with intriguing functionalities in strongly-correlated electron systems.

cond-mat.str-el↗

arXiv2021

Two-dimensionality of metallic surface conduction in Co3Sn2S2 thin films

Two-dimensional (2D) surface of the topological materials is an attractive channel for the electrical conduction reflecting the linearly-dispersive electronic bands. By applying a reliable systematic thickness t dependent measurement of sheet conductance, here we elucidate the dimensionality of the electrical conduction paths of a Weyl semimetal Co3Sn2S2. Under the ferromagnetic phase, the 2D conduction path clearly emerges in Co3Sn2S2 thin films, indicating a formation of the Fermi arcs projected from Weyl nodes. Comparison between 3D conductivity and 2D conductance provides the effective thickness of the surface conducting region being estimated to be approximately 20 nm, which is rather thicker than 5 nm in topological insulator Bi2Se3. This large value may come from the narrow gap at Weyl point and relatively weak spin-orbit interaction of the Co3Sn2S2. The emergent surface conduction will provide a pathway to activate quantum and spintronic transport features stemming from a Weyl node in thin-film-based devices.

cond-mat.mtrl-sci↗

arXiv2020

Signature of band inversion in the perovskite thin-film alloys BaSn$_{1-x}$Pb$_x$O$_3$

Perovskite oxides ABO$_3$ containing heavy B-site elements are a class of candidate materials to host topological metals with a large spin-orbit interaction. In contrast to the band insulator BaSnO$_3$, the semimetal BaPbO$_3$ is proposed to be a typical example with an inverted band structure, the conduction band of which is composed of mainly the O-2p orbital. In this study, we exemplify a band-gap modification by systematic structural, optical, and transport measurements in BaSn$_{1-x}$Pb$_x$O$_3$ films. A sudden suppression of the conductivity and an enhancement of the weak antilocalization effect at $x$ = 0.9 indicate the presence of a singular point in the electronic structure as a signature of the band inversion. Our findings provide an intriguing platform for combining topological aspects and electron correlation in perovskite oxides based on band-gap engineering.

cond-mat.mtrl-sci↗

arXiv2019

Ordering phenomena of spin trimers accompanied by large geometrical Hall effect

The wavefuntion of conduction electrons moving in the background of a non-coplanar spin structure can gain a quantal phase - Berry phase - as if the electrons were moving in a strong fictitious magnetic field. Such an emergent magnetic field effect is approximately proportional to the solid angle subtended by the spin moments on three neighbouring spin sites, termed the scalar spin chirality. The entire spin chirality of the crystal, unless macroscopically canceled, causes the geometrical Hall effect of real-space Berry-phase origin, whereas the intrinsic anomalous Hall effect (AHE) in a conventional metallic ferromagnet is of the momentum-space Berry-phase origin induced by relativistic spin-orbit coupling (SOC). Here, we report the ordering phenomena of the spin-trimer scalar spin chirality and the consequent large geometrical Hall effect in the breathing kagomé lattice compound Dy$_3$Ru$_4$Al$_{12}$, where the Dy$^{3+}$ moments form non-coplanar spin trimers with local spin chirality. Using neutron diffraction, we show that the local spin chirality of the spin trimers as well as its ferroic/antiferroic orders can be switched by an external magnetic field, accompanying large changes in the geometrical Hall effect. Our finding reveals that systems composed of tunable spin trimers can be a fertile field to explore large emergent electromagnetic responses arising from real-space topological magnetic orders.

cond-mat.str-el↗

arXiv2017

Fabrication of tetragonal FeSe - FeS alloy films with high sulfur contents by alternate deposition

We report the synthesis of tetragonal $\mathrm{FeS}_x\mathrm{Se}_{1-x}$ films ($x \leq 0.78$) by pulsed-laser deposition. To fabricate the tetragonal alloy films with tetragonal FeSe and hexagonal FeS targets, we adopted an alternate deposition technique with FeSe buffer layer on MgO(001). The overall film composition is controlled by the thickness ratio of FeS / FeSe layers. The out-of-plane lattice parameter of the films follows Vegard's law, demonstrating homogeneous alloying by inter-diffusion. The sulfur solid solubility reaches $x = 0.78$ in the $\mathrm{FeS}_x\mathrm{Se}_{1-x}$ films, which is by far larger than $x \approx 0.40$ in bulk governed by the tetragonal phase instability.

cond-mat.supr-con↗

arXiv2015

Shot Noise Induced by Nonequilibrium Spin Accumulation

When an electric current passes across a potential barrier, the partition process of electrons at the barrier gives rise to the shot noise, reflecting the discrete nature of the electric charge. Here we report the observation of excess shot noise connected with a spin current which is induced by a nonequilibrium spin accumulation in an all-semiconductor lateral spin-valve device. We find that this excess shot noise is proportional to the spin current. Additionally, we determine quantitatively the spin-injection-induced electron temperature by measuring the current noise. Our experiments show that spin accumulation driven shot noise provides a novel means of investigating nonequilibrium spin transport.

cond-mat.mes-hall↗

arXiv2013

Giant enhancement of spin detection sensitivity in (Ga,Mn)As/GaAs Esaki diodes

We investigate the correlation between spin signals measured in three-terminal (3T) geometry by the Hanle effect and the spin accumulation generated in a semiconductor channel in a lateral (Ga,Mn)As/GaAs Esaki diode device. We systematically compare measurements using a 3T configuration, probing spin accumulation directly beneath the injecting contact, with results from nonlocal measurements, where solely spin accumulation in the GaAs channel is probed. We find that the spin signal detected in the 3T configuration is dominated by a bias-dependent spin detection sensitivity, which in turn is strongly correlated with charge-transport properties of the junction. This results in a particularly strong enhancement of the detected spin signal in a region of increased differential resistance. We find additionally that two-step tunneling via localized states (LS) in the gap of (Ga,Mn)As does not compromise spin injection into the semiconductor conduction band.

cond-mat.mtrl-sci↗