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Junsaku Nitta

Publications and source records attributed to Junsaku Nitta.

At least 19 recordsLinked to original sources

Uniform Narrow Excitonic Spectrum in Large-Area Suspended WSe2 Monolayers

Uniformity in the excitonic spectrum is a key requirement for accessing intrinsic excitonic physics in two-dimensional semiconductors; however, in transition-metal dichalcogenide (TMD) monolayers supported on substrates, exciton energies and linewidths can vary spatially due to inhomogeneities from contact with other materials or fabrication residues. Suspended TMD monolayers provide a route to minimizing substrate-induced disorder, although conventional transfer processes can introduce contamination. Here we demonstrate the spatially uniform excitonic spectrum from optically high-quality WSe2 suspended monolayers fabricated by gold-assisted exfoliation directly onto an Au contact electrode of a gate-tunable device. The resulting membranes span narrow suspended regions up to ~80 um and show spatially uniform photoluminescence at cryogenic temperatures with neutral-exciton linewidths as low as ~4.5 meV. Spectral reproducibility supports an intrinsic optical response, while gate-dependent measurements resolve multiple excitonic species. This approach provides a route to electrically tunable potential landscapes in suspended TMD monolayers with a highly uniform excitonic response.

cond-mat.mes-hall↗

Enhanced interlayer electron transfer by surface treatments in mixed-dimensional van der Waals semiconductor heterostructures

We investigate the excitonic species in WS$_{2}$ monolayers transferred onto III-V semiconductor substrates with different surface treatments. When the III-V substrates were covered with amorphous native oxides, negatively charged excitons dominate the spectral weight in low-temperature near-resonance photoluminescence (PL) measurements. However, when the native oxides of the III-V substrates were reduced, neutral excitons begin to dominate the spectral weight, indicating a reduction in the electron density in the WS$_{2}$ monolayers. The removal of the native oxides enhanced the electron transfer from the WS$_{2}$ monolayer to the III-V substrate. In addition, an additional shoulder-like PL feature appeared $\sim$50 meV below the emission of neutral excitons, which can be attributed to the emission of localized excitons. When the III-V substrate surface was passivated by sulfur after the reduction of the native oxides, neutral excitons still dominated the spectral weight. However, the low energy PL shoulder disappeared again, suggesting the effective delocalization of excitons through the substrate surface passivation. Surface engineering of the semiconductor substrates for two-dimensional (2D) materials can provide a novel approach to control the carrier density of the 2D materials, to implement deterministic carrier localization or delocalization for the 2D materials, and to facilitate the interlayer transfer of charge, spin, and valley currents. These findings open the avenue for novel device concepts and phenomena in mixed-dimensional semiconductor heterostructures.

cond-mat.mtrl-sci↗

Observation of spin-splitter torque in collinear antiferromagnetic RuO$_2$

The spin-splitter effect is theoretically predicted to generate an unconventional spin current with $\mathit{x}$- and $\mathit{z}$- spin polarization via the spin-split band in antiferromagnets. The generated torque, namely spin-splitter torque, is effective for the manipulation of magnetization in an adjacent magnetic layer without an external magnetic field for spintronic devices such as MRAM. Here, we study the generation of torque in collinear antiferromagnetic RuO$_2$ with (100), (101), and (001) crystal planes. Next we find all $\mathit{x}$-, $\mathit{y}$-, and $\mathit{z}$-polarized spin currents depending on the Néel vector direction in RuO$_2$(101). For RuO$_2$(100) and (001), only $\mathit{y}$-polarized spin current was present, which is independent of the Néel vector. Using the $\mathit{z}$-polarized spin currents, we demonstrate field-free switching of the perpendicular magnetized ferromagnet at room temperature. The spin-splitter torque generated from RuO$_2$ is verified to be useful for the switching phenomenon and paves the way for a further understanding of the detailed mechanism of the spin-splitter effect and for developing antiferromagnetic spin-orbitronics.

cond-mat.mtrl-sci↗

Spin-current-related magnetoresistance in epitaxial Pt/Co bilayers in the presence of spin Hall effect and Rashba-Edelstein effect

We analyze the experimentally obtained spin-current-related magnetoresistance in epitaxial Pt/Co bilayers by using a drift-diffusion model that incorporates both bulk spin Hall effect and interfacial Rashba-Edelstein effect (REE). The magnetoresistance analysis yields, for the Pt/Co interface, a temperature-independent Rashba parameter in the order of 1e-11 eV m that agrees with theoretical calculations, along with an effective interfacial REE thickness of several angstroms which is in overall consistency with our previous spin-orbit torque analysis. In particular, our results suggest that both bulk and interface charge-spin current inter-conversions need to be taken into account for the spin-current-related magnetoresistance analysis in highly-conductive magnetic hetero-structures such as the epitaxial Pt/Co bilayers.

cond-mat.mtrl-sci↗

Control of Spin Relaxation Anisotropy by Spin-Orbit-Coupled Diffusive Spin Motion

Spatiotemporal spin dynamics under spin-orbit interaction is investigated in a (001) GaAs two-dimensional electron gas using magneto-optical Kerr rotation microscopy. Spin polarized electrons are diffused away from the excited position, resulting in spin precession because of the diffusion-induced spin-orbit field. Near the cancellation between spin-orbit field and external magnetic field, the induced spin precession frequency depends nonlinearly on the diffusion velocity, which is unexpected from the conventional linear relation between the spin-orbit field and the electron velocity.This behavior originates from an enhancement of the spin relaxation anisotropy by the electron velocity perpendicular to the diffused direction. We demonstrate that the spin relaxation anisotropy, which has been regarded as a material constant, can be controlled via diffusive electron motion.

cond-mat.mes-hall↗

Enhanced longevity of the spin helix in low-symmetry quantum wells

In a semiconductor, collective excitations of spin textures usually decay rather fast due to D'yakonov-Perel' spin relaxation. The latter arises from spin-orbit coupling, which induces wave-vector-dependent spin rotations that, in conjunction with random disorder scattering, generate spin decoherence. However, symmetries occurring under certain conditions can prevent the relaxation of particular homogeneous and inhomogeneous spin textures. The inhomogeneous spin texture, termed as persistent spin helix, is especially appealing as it enables us to manipulate the spin orientation while retaining a long spin lifetime. Recently, it was predicted that such symmetries can be realized in zinc-blende two-dimensional electron gases if at least two growth-direction Miller indices agree in modulus and the coefficients of the Rashba and linear Dresselhaus spin-orbit couplings are suitably matched [PRL 117, 236801 (2016)]. In the present paper, we systematically analyze the impact of the symmetry-breaking cubic Dresselhaus spin-orbit coupling, which generically coexists in these systems, on the stability of the emerging spin helices with respect to the growth direction. We find that, as an interplay between orientation and strength of the effective magnetic field induced by the cubic Dresselhaus terms, the spin relaxation is weakest for a low-symmetry growth direction that can be well approximated by a [225] lattice vector. These quantum wells yield a 30\% spin-helix lifetime enhancement compared to [001]-oriented electron gases and, remarkably, require a negligible Rashba coefficient. The rotation axis of the corresponding spin helix is only slightly tilted out of the quantum-well plane. This makes the experimental study of the spin-helix dynamics readily accessible for conventional optical spin orientation measurements where spins are excited and detected along the quantum-well growth direction.

cond-mat.mes-hall↗

Anomalous spin-orbit field via Rashba-Edelstein effect at W/Pt interface

We have studied spin-orbit (SO) field in Ni$_{80}$Fe$_{20}$(Py)/W/Pt trilayer by means of spin-torque ferromagnetic resonance, and demonstrated that the W/Pt interface generates an extra SO field acting on the Py layer. This unprecedented field originates from the following three processes, 1) spin accumulation at W/Pt interface via the Rashba-Edelstein effect, 2) diffusive spin transport in the W layer, and 3) spin absorption into the Py layer through accumulation at the Py/W interface. Our result means that we can create extra SO field away from the ferromagnet/ metal interface and control its strength by a combination of two different metals.

cond-mat.mes-hall↗

Gate-controlled anisotropy in Aharonov-Casher spin interference: signatures of Dresselhaus spin-orbit inversion and spin phases

The coexistence of Rashba and Dresselhaus spin-orbit interactions (SOIs) in semiconductor quantum wells leads to an anisotropic effective field coupled to carriers' spins. We demonstrate a gate-controlled anisotropy in Aharonov-Casher (AC) spin interferometry experiments with InGaAs mesoscopic rings by using an in-plane magnetic field as a probe. Supported by a perturbation-theory approach, we find that the Rashba SOI strength controls the AC resistance anisotropy via spin dynamic and geometric phases and establish ways to manipulate them by employing electric and magnetic tunings. Moreover, assisted by two-dimensional numerical simulations, we identify a remarkable anisotropy inversion in our experiments attributed to a sign change in the renormalized linear Dresselhaus SOI controlled by electrical means, which would open a door to new possibilities for spin manipulation.

cond-mat.mes-hall↗

Spin interferometry in anisotropic spin-orbit fields

Electron spins in a two-dimensional electron gas (2DEG) can be manipulated by spin-orbit (SO) fields originating from either Rashba or Dresselhaus interactions with independent isotropic characteristics. Together, though, they produce anisotropic SO fields with consequences on quantum transport through spin interference. Here we study the transport properties of modelled mesoscopic rings subject to Rashba and Dresselhaus [001] SO couplings in the presence of an additional in-plane Zeeman field acting as a probe. By means of 1D and 2D quantum transport simulations we show that this setting presents anisotropies in the quantum resistance as a function of the Zeeman field direction. Moreover, the anisotropic resistance can be tuned by the Rashba strength up to the point to invert its response to the Zeeman field. We also find that a topological transition in the field texture that is associated with a geometric phase switching is imprinted in the anisotropy pattern. We conclude that resistance anisotropy measurements can reveal signatures of SO textures and geometric phases in spin carriers.

cond-mat.mes-hall↗

Effective geometric phases and topological transitions in SO(3) and SU(2) rotations

We address the development of geometric phases in classical and quantum magnetic moments (spin-1/2) precessing in an external magnetic field. We show that nonadiabatic dynamics lead to a topological phase transition determined by a change in the driving field topology. The transition is associated with an effective geometric phase which is identified from the paths of the magnetic moments in a spherical geometry. The topological transition presents close similarities between SO(3) and SU(2) cases but features differences in, e.g., the adiabatic limits of the geometric phases, being $2π$ and $π$ in the classical and the quantum case, respectively. We discuss possible experiments where the effective geometric phase would be observable.

cond-mat.mes-hall↗

Topological transitions in spin interferometers

We show that topological transitions in electronic spin transport are feasible by a controlled manipulation of spin-guiding fields. The transitions are determined by the topology of the fields texture through an effective Berry phase (related to the winding parity of spin modes around poles in the Bloch sphere), irrespective of the actual complexity of the nonadiabatic spin dynamics. This manifests as a distinct dislocation of the interference pattern in the quantum conductance of mesoscopic loops. The phenomenon is robust against disorder, and can be experimentally exploited to determine the magnitude of inner spin-orbit fields.

cond-mat.mes-hall↗

Shot Noise Induced by Nonequilibrium Spin Accumulation

When an electric current passes across a potential barrier, the partition process of electrons at the barrier gives rise to the shot noise, reflecting the discrete nature of the electric charge. Here we report the observation of excess shot noise connected with a spin current which is induced by a nonequilibrium spin accumulation in an all-semiconductor lateral spin-valve device. We find that this excess shot noise is proportional to the spin current. Additionally, we determine quantitatively the spin-injection-induced electron temperature by measuring the current noise. Our experiments show that spin accumulation driven shot noise provides a novel means of investigating nonequilibrium spin transport.

cond-mat.mes-hall↗

Giant enhancement of spin detection sensitivity in (Ga,Mn)As/GaAs Esaki diodes

We investigate the correlation between spin signals measured in three-terminal (3T) geometry by the Hanle effect and the spin accumulation generated in a semiconductor channel in a lateral (Ga,Mn)As/GaAs Esaki diode device. We systematically compare measurements using a 3T configuration, probing spin accumulation directly beneath the injecting contact, with results from nonlocal measurements, where solely spin accumulation in the GaAs channel is probed. We find that the spin signal detected in the 3T configuration is dominated by a bias-dependent spin detection sensitivity, which in turn is strongly correlated with charge-transport properties of the junction. This results in a particularly strong enhancement of the detected spin signal in a region of increased differential resistance. We find additionally that two-step tunneling via localized states (LS) in the gap of (Ga,Mn)As does not compromise spin injection into the semiconductor conduction band.

cond-mat.mtrl-sci↗

Shot noise suppression in InGaAs/InGaAsP quantum channels

We have measured the shot noise in a quantum point contact (QPC) fabricated by using InGaAs/InGaAsP heterostructure, whose conductance can be electrically tuned by the gate voltages. The reduced shot noise is observed when the QPC conductance equals to N(2e^2/h) (N=4, 5, and 6), which is the direct experimental evidence of the coherent quantized channel formation in the QPC. The deviation of the observed Fano factor from the theory is explained by the electron heating effect generated at the QPC.

cond-mat.mes-hall↗

Anisotropic universal conductance fluctuations in disordered quantum wires with Rashba and Dresselhaus spin-orbit interaction and applied in-plane magnetic field

We investigate the transport properties of narrow quantum wires realized in disordered two-dimensional electron gases in the presence of k-linear Rashba and Dresselhaus spin-orbit interaction (SOI), and an applied in-plane magnetic field. Building on previous work [Scheid, et al., PRL 101, 266401 (2008)], we find that in addition to the conductance, the universal conductance fluctuations also feature anisotropy with respect to the magnetic field direction. This anisotropy can be explained solely from the symmetries exhibited by the Hamiltonian as well as the relative strengths of the Rashba and Dresselhaus spin orbit interaction and thus can be utilized to detect this ratio from purely electrical measurements.

cond-mat.mes-hall↗

All-electrical detection of the relative strength of Rashba and Dresselhaus spin-orbit interaction in quantum wires

We propose a method to determine the relative strength of Rashba and Dresselhaus spin-orbit interaction from transport measurements without the need of fitting parameters. To this end, we make use of the conductance anisotropy in narrow quantum wires with respect to the directions of an in-plane magnetic field, the quantum wire and the crystal orientation. We support our proposal by numerical calculations of the conductance of quantum wires based on the Landauer formalism which show the applicability of the method to a wide range of parameters.

cond-mat.mes-hall↗

Experimental demonstration of the time reversal Aharonov-Casher effect

We demonstrate the time reversal Aharonov-Casher (AC) effect in small arrays of mesoscopic semiconductor rings. By using an electrostatic gate we can control the spin precession rate and follow the AC phase over several interference periods. We show that we control the precession rate in two different gate voltage ranges; in the lower range the gate voltage dependence is strong and linear and in the higher range the dependence in almost an order of magnitude weaker. We also see the second harmonic of the AC interference, oscillating with half the period. We finally map the AC phase to the spin-orbit interaction parameter alpha and find it is consistent with Shubnikov-de Haas analysis.

cond-mat.mes-hall↗

Mesoscopic Stern-Gerlach spin filter by nonuniform spin-orbit interaction

A novel spin filtering in two-dimensional electron system with nonuniform spin-orbit interactions (SOI) is theoretically studied. The strength of SOI is modulated perpendicular to the charge current. A spatial gradient of effective magnetic field due to the nonuniform SOI causes the Stern-Gerlach type spin separation. The direction of the polarization is perpendicular to the current and parallel to the spatial gradient. Almost 100 % spin polarization can be realized even without applying any external magnetic fields and without attaching ferromagnetic contacts. The spin polarization persists even in the presence of randomness.

cond-mat.mes-hall↗