arXiv subjects

Junxi Duan

Publications and source records attributed to Junxi Duan.

At least 19 recordsLinked to original sources

arXiv2026

Magnetic-Field Selection of Magnetic Order in Altermagnets and Noncollinear Antiferromagnets

Conventional field selection of magnetic order relies on the Zeeman coupling, which, however, vanishes in magnets without net magnetization, a rapidly growing class including altermagnets (AMs), noncollinear antiferromagnets (nc-AFMs), and PT-symmetric antiferromagnets (PT-AFMs). Here we show that the quantity that fundamentally couples a magnet to a uniform magnetic field is not the magnetization, but the binary order parameter eta that labels the two time-reversal-related minima of the Landau free energy. We develop a Landau theory of order selection based on eta under the constraints of magnetic point-group (MPG) symmetry, in which eta couples to odd-degree polynomials in the magnetic field. Within this framework, the linear term is the ferromagnetic Zeeman coupling, while higher-order couplings with leading degree n = 3, 5, 7, and 9 naturally appear in AMs and nc-AFMs. In contrast, combined PT symmetry forbids any such coupling. Consequently, it is the order-(n-1) magnetic susceptibility, rather than the net magnetization, that serves as the primary experimental observable for identifying the magnetic order of AMs and nc-AFMs. For all 122 MPGs, we classify the leading coupling degree and the corresponding polynomial forms. We demonstrate our framework in two representative materials: the AM MnF2 and the nc-AFM MnTe2. We further construct a symmetry-allowed spin model for an AM system to reveal the microscopic origin of the higher-order coupling and establish the coupling coefficient explicitly in terms of the spin-model parameters. Our work unifies the description of magnetic-order selection across magnets with and without net magnetization, offers a microscopic origin for this counterintuitive physics, and provides fingerprints for distinguishing intrinsic field selection from extrinsic switching.

cond-mat.mtrl-sci↗

arXiv2026

N\'eel-order-dependent transverse transport in noncoplanar antiferromagnet $\text{MnTe}_{2}$

Antiferromagnets hold appealing potential in next-generation spintronic devices with higher frequency and scalability, thanks to their alternating spin orientations that cancel out net magnetization. However, the lack of a nonzero magnetization makes the detection of the magnetic configuration of antiferromagnet difficult, hampering the applications of antiferromagnets. Here, we report a new transverse transport effect in noncoplanar antiferromagnet $\text{MnTe}_{2}$. This effect is antisymmetric in both magnetic field and N\'eel order, but symmetric in its two indices. It can be understood in terms of the contribution induced by both magnetic field and geometric quantities, as confirmed by our theoretical calculations. Our discovery of a new N\'eel-order-dependent transverse transport effect provides opportunities to the advancing antiferromagnetic spintronics.

cond-mat.mtrl-sci↗

arXiv2026

Nonlinear Hall quantum oscillations to probe topological Brown-Zak fermions in graphene moir\'e systems

Due to the deep connection with the quantum geometry of electronic Bloch wavefunctions, the second-order nonlinear Hall effect (NLHE) has been an attractive topic since its proposal. However, studies on NLHE under a magnetic field have been lacking. Given that quantum oscillations in the linear response regime have been proven to be useful tools in investigating electronic systems, searching for quantum oscillations in NLHE is of great interest and is expected to provide new avenues to unveil rich quantum geometric properties of novel quasiparticles. Here, we propose a new type of NLHE quantum oscillations and experimentally probe it in graphene moir\'e systems. It stems from the alternation of the dominant NLHE mechanisms with recurring Bloch states under magnetic field, which enables sensitive detection of Brown-Zak fermions, giving an onset field as low as 0.5 T. Most importantly, when the commensurability condition is satisfied, the nonlinear transport of Brown-Zak fermions is mainly governed by quantum geometric contributions. Our findings not only establish a new type of quantum oscillations, but also demonstrate the first experimental detection of the topological nature of Brown-Zak fermions, shedding light on the exploration of novel topological quasiparticles.

cond-mat.mes-hall↗

arXiv2024

Evidence of anisotropic three-dimensional weak-localization in TiSe$_{2}$ nanoflakes

TiSe$_2$ is a typical transition-metal dichalcogenide known for its charge-density wave order. In this study, we report the observation of an unusual anisotropic negative magnetoresistance in exfoliated TiSe$_2$ nanoflakes at low temperatures. Unlike the negative magnetoresistance reported in most other transition-metal dichalcogenides, our results cannot be explained by either the conventional two-dimensional weak localization effect or the Kondo effect. A comprehensive analysis of the data suggests that the observed anisotropic negative magnetoresistance in TiSe$_2$ flakes is most likely caused by the three-dimensional weak localization effect. Our findings contribute to a deeper understanding of the phase-coherent transport processes in TiSe$_2$.

cond-mat.mes-hall↗

arXiv2024

Unambiguous identification of the indirect band nature of atomically thin hexagonal boron nitride

Atomically thin hexagonal boron nitride (h-BN), especially monolayer, has garnered increasing attention due to its intriguing optical and light-matter-interaction properties. However, its intrinsic optical properties and electronic band structure, have long remained elusive. In this study, near-resonance excited deep-UV photoluminescence/Raman spectroscopy and deep-UV reflectance contrast spectroscopy are utilized to experimentally investigate the optical properties of atomically thin h-BN across various layer numbers. It is revealed that the absence of luminescence in 1-3 layers h-BN is indicative of their indirect band gap nature, rectifying previously adopted identification of a direct band gap in monolayer BN. Notably, band-edge luminescence signals and indirect bandgap absorption start to appear in 4-layer, and the luminescence intensity increases with the number of layers, suggesting that interlayer interactions and periodicity along the z-axis enhance phonon-assisted indirect bandgap transition, even in the 4-layer case, and furthermore indicating the formation process of flat bands at the K and M valleys as the periodicity along the z direction increases. Additionally, the prominent resonance Raman signals in atomically thin h-BN underscore strong electron-phonon coupling in this material.

cond-mat.mtrl-sci↗

arXiv2023

Resonant Electric Probe to Axionic Dark Matter

The oscillating light axion field is known as wave dark matter. We propose an LC-resonance enhanced detection of the narrow band electric signals induced by the axion dark matter using a solenoid magnet facility. We provide full 3D electromagnetic simulation results for the signal electric field. The electric signal is enhanced by the high $Q$-factor of a resonant LC circuit and then amplified and detected by the state-of-the-art cryogenic electrical transport measurement technique. The cryogenic amplifier noise is the dominant noise source in the proposed detection system. We estimate that the detection system can have a promising sensitivity to axion dark matter with mass below $10^{-6}$ eV. The projected sensitivities improve with the size of the magnetic field, and the electric signal measurement can be potentially sensitive to the quantum chromodynamics (QCD) axion with $g_{aγ} \sim 10^{-16}$ GeV$^{-1}$ around $m_a \sim 10^{-8}$eV, with a multi-meter scale magnetized region. This limit is around five orders of magnitude below the current constraint from the cosmic rays.

hep-ph↗

arXiv2023

Effective manipulation and realization of a colossal nonlinear Hall effect in an electric-field tunable moiré system

The second-order nonlinear Hall effect illuminates a frequency-doubling transverse current emerging in quantum materials with broken inversion symmetry even when time-reversal symmetry is preserved. This nonlinear response originates from both the Berry curvature dipole and the chiral Bloch electron skew scatterings, reflecting various information of the lattice symmetries, band dispersions, and topology of the electron wavefunctions. Even though many efforts have been put in detecting the nonlinear Hall effect in diverse condensed matter systems, effective manipulation of the two principal mechanisms in a single system has been lacking, and the reported response is relatively weak. Here, we report effective manipulation of the nonlinear Hall effect and realization of a colossal second-order Hall conductivity, $\sim500 μmSV^{-1}$, orders of magnitudes higher than the reported values, in AB-BA stacked twisted double bilayer graphene. A Berry-curvature-dipole-dominated nonlinear Hall effect, as well as its controllable transition to skew-scattering-dominated response, is identified near the band edge. The colossal response, on the other hand, is detected near the van Hove singularities, mainly determined by the skew scattering of the chiral Bloch electrons. Our findings establish electrically tunable moiré systems promising for nonlinear Hall effect manipulations and applications.

cond-mat.mes-hall↗

arXiv2022

Giant second-order nonlinearity in twisted bilayer graphene

In the second-order response regime, the Hall voltage can be nonzero without breaking the time-reversal symmetry, as long as the system is noncentrosymmetric. There are multiple mechanisms with different scaling rules that contribute to the nonlinear Hall effect (NLHE). The intrinsic contribution is closely related to the Berry curvature dipole and has been extensively investigated recently. The study of the extrinsic contribution, however, is scarce, although it can enter the NLHE even in the leading order. Here, we report a giant nonlinear transport response in TBG, in which the intrinsic mechanism is forbidden. The magnitude and direction of the second-order nonlinearity can be effectively tuned by the gate voltage. The peak value of the second-order Hall conductivity close to the full filling of the moiré band reaches 8.76 $μmSV^{-1}$, four-order larger than those detected in $WTe_2$. The observed giant second-order nonlinearity can be understood from the collaboration of the asymmetric scattering of electrons off the static (Coulomb impurities) and dynamic disorders (phonons) in noncentrosymmetric crystals. It is mainly determined by the skew-scattering contribution from impurities at 1.7 K. The skew-scattering from phonons has a much larger coupling coefficient as suggested by the scaling results, and becomes as important as the impurity contribution as the temperature rises. Our observations demonstrate the potential of TBG in studying nonlinear response and possible rectification applications.

cond-mat.mes-hall↗

arXiv2022

Quantum transport evidence of the boundary states and Lifshitz transition in Bi$_4$Br$_4$

The quasi-one-dimensional van der Waals compound Bi$_4$Br$_4$ was recently found to be a promising high-order topological insulator with exotic electronic states. In this paper, we study the electrical transport properties of Bi$_4$Br$_4$ bulk crystals. Two electron-type samples with different electron concentrations are investigated. Both samples have saturation resistivity behavior in low temperature. In the low-concentration sample, two-dimensional quantum oscillations are clearly observed in the magnetoresistance measurements, which are attributed to the band-bending-induced surface state on the (001) facet. In the high-concentration sample, the angular magnetoresistance exhibits two pairs of symmetrical sharp valleys with an angular difference close to the angle between the crystal planes (001) and (100). The additional valley can be explained by the contribution of the boundary states on the (100) facet. Besides, Hall measurements at low temperatures reveal an anomalous decrease of electron concentration with increasing temperature, which can be explained by the temperature-induced Lifshitz transition. These results shed light on the abundant surface and boundary state transport signals and the temperature-induced Lifshitz transition in Bi$_4$Br$_4$.

cond-mat.mtrl-sci↗

arXiv2022

Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5

The recently discovered coexistence of superconductivity and charge density wave order in the kagome systems AV3Sb5 (A = K, Rb, Cs) has stimulated enormous interest. According to theory, a vanadium-based kagome system may host a flat band, nontrivial linear dispersive Dirac surface states and electronic correlation. Despite intensive investigations, it remains controversial about the origin of the charge density wave (CDW) order, how does the superconductivity relate to the CDW, and whether the anomalous Hall effect (AHE) arises primarily from the kagome lattice or the CDW order. We report an extensive investigation on Cs(V1-xNbx)3Sb5 samples with systematic Nb doping. Our results show that the Nb doping induces apparent suppression of CDW order and promotes superconductivity; meanwhile, the AHE and magnetoresistance (MR) will be significantly weakened together with the CDW order. Combining with our density functional calculations, we interpret these effects by an antiphase shift of the Fermi energy with respect to the saddle points near M and the Fermi surface centered around Γ. It is found that the former depletes the filled states for the CDW instability and worsens the nesting condition for CDW order; while the latter lifts the Fermi level upward and enlarges the Fermi surface surrounding the Γ point, and thus promotes superconductivity. Our results uncover a delicate but unusual competition between the CDW order and superconductivity.

cond-mat.supr-con↗

arXiv2021

Wafer-Scale Epitaxy of Flexible Nitride Films with Superior Plasmonic and Superconducting Performance

Transition-metal nitrides (e.g., TiN, ZrN, TaN) are incredible materials with excellent complementary-metal-oxide-semiconductor compatibility and remarkable performance in refractory plasmonics and superconducting quantum electronics. Epitaxial growth of flexible transition-metal nitride films, especially at wafer-scale, is fundamentally important for developing high-performance flexible photonics and superconducting electronics, but the study is rare thus far. This work reports the high-quality epitaxy of 2-inch titanium nitride (TiN) films on flexible fluorophlogopite-mica (F-mica) substrates via reactive magnetron sputtering. Combined measurements of spectroscopic ellipsometer and electrical transport reveal the superior plasmonic and superconducting performance of TiN/F-mica films owing to the high single crystallinity. More interestingly, the superconductivity of these flexible TiN films can be manipulated by the bending states, and enhanced superconducting critical temperature TC is observed in convex TiN films with in-plane tensile strain. Density-functional-theory calculations uncover that the strain can tune the electron-phonon interaction strength and resultant superconductivity of TiN films. This study provides a promising route towards integrating scalable single-crystalline conductive transition-metal nitride films with flexible electronics for high-performance plasmonics and superconducting electronics.

cond-mat.supr-con↗

arXiv2021

Electronic nature of chiral charge order in the kagome superconductor CsV3Sb5

Kagome superconductors with Tc up to 7K have been discovered over 40 years. Recently, unconventional chiral charge order has been reported in kagome superconductor KV3Sb5, with an ordering temperature of one order of magnitude higher than the TC. However, the chirality of the charge order has not been reported in the cousin kagome superconductor CsV3Sb5, and the electronic nature of the chirality remains elusive. In this letter, we report the observation of electronic chiral charge order in CsV3Sb5 via scanning tunneling microscopy (STM). We observe a 2x2 charge modulation and a 1x4 superlattice in both topographic data and tunneling spectroscopy. 2x2 charge modulation is highly anticipated as a charge order by fundamental kagome lattice models at van Hove filling, and is shown to exhibit intrinsic chirality. We find that the 1x4 superlattices forms various small domain walls, and can be a surface effect as supported by our first-principles calculations. Crucially, we find that the amplitude of the energy gap opened by the charge order exhibits real space modulations, and features 2x2 wave vectors with chirality, highlighting the electronic nature of the chiral charge order. STM study at 0.4K reveals a superconducting energy gap with a gap size 2Δ=0.85meV, which estimates a moderate superconductivity coupling strength with 2Δ/kBTc=3.9. When further applying a c-axis magnetic field, vortex core bound states are observed within this gap, indicative of clean-limit superconductivity.

cond-mat.str-el↗

arXiv2021

One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering

As a unique perovskite transparent oxide semiconductor, high-mobility La-doped BaSnO3 films have been successfully synthesized by molecular beam epitaxy and pulsed laser deposition. However, it remains a big challenge for magnetron sputtering, a widely applied technique suitable for large-scale fabrication, to grow high-mobility La-doped BaSnO3 films. Here, we developed a method to synthesize high-mobility epitaxial La-doped BaSnO3 films (mobility up to 121 cm2V-1s-1 at the carrier density ~ 4.0 x 10^20 cm-3 at room temperature) directly on SrTiO3 single crystal substrates using high-pressure magnetron sputtering. The structural and electrical properties of the La-doped BaSnO3 films were characterized by combined high-resolution X-ray diffraction, X-ray photoemission spectroscopy, and temperature-dependent electrical transport measurements. The room temperature electron mobility of La-doped BaSnO3 films in this work is 2 to 4 times higher than the reported values of the films grown by magnetron sputtering. Moreover, in the high carrier density range (n > 3 x 10^20 cm-3), the electron mobility value of 121 cm2V-1s-1 in our work is among the highest values for all reported doped BaSnO3 films. It is revealed that high argon pressure during sputtering plays a vital role in stabilizing the fully relaxed films and inducing oxygen vacancies, which benefit the high mobility at room temperature. Our work provides an easy and economical way to massively synthesize high-mobility transparent conducting films for transparent electronics.

cond-mat.mtrl-sci↗

arXiv2020

Observation of the Topologically Originated Edge States in large-gap Quasi-One-Dimensional a-Bi$_4$Br$_4$

Two-dimensional topological insulator features time-reversal-invariant spin-momentum-locked one-dimensional (1D) edge states with a linear energy dispersion. However, experimental access to 1D edge states is still of great challenge and only limited to few techniques to date. Here, by using infrared absorption spectroscopy, we observed robust topologically originated edge states in a-Bi4Br4 belts with definitive signature of strong infrared absorption at belt sides and distinct anisotropy with respect to light polarizations, which is further supported by first-principles calculations. Our work demonstrates for the first time that the infrared spectroscopy can offer a power-efficient approach in experimentally probing 1D edge states of topological materials.

cond-mat.mtrl-sci↗

arXiv2020

Ultralong carrier lifetime of topological edge states in a-Bi4Br4

The rising of quantum spin Hall insulators (QSHI) in two-dimensional (2D) systems has been attracting significant interest in current research, for which the 1D helical edge states, a hallmark of QSHI, are widely expected to be a promising platform for next-generation optoelectronics. However, the dynamics of the 1D edge states has not yet been experimentally addressed. Here, we report the observation of optical response of the topological helical edge states in a-Bi4Br4, using the infrared-pump infrared-probe microscopic spectroscopy. Remarkably, we observe that the carrier lifetime of the helical edge states reaches nanosecond-scale at room temperature, which is about 2 - 3 orders longer than that of most 2D topological surface states and is even comparable with that of the well developed optoelectronics semiconductors used in modern industry. The ultralong carrier lifetime of the topological edge states may be attributed to their helical and 1D nature. Our findings not only provide an ideal material for further investigations of the carrier dynamics of 1D helical edge states but also pave the way for its application in optoelectronics.

cond-mat.mtrl-sci↗

arXiv2020

Creating and manipulating interfacial spin with giant magnetic response in 4$f$ antiferromagnets

Creating and manipulating spin polarization in low-dimensional electron systems (such as two-dimensional electron gases) is fundamentally essential for spintronic applications, which is yet a challenge to date. In this work, we establish the metamagnetic phase diagram of 4$f$ antiferromagnetic TbScO$_3$ and reveal its giant magnetic response to sub-tesla magnetic field, which has not been reported thus far. Utilizing this giant magnetic response, we demonstrate that the spin polarization of two-dimensional electron gas in SrTiO$_3$/LaTiO$_3$/TbScO$_3$ heterostructure can be manipulated successfully in aid of interfacial 3\textit{d}-4\textit{f} exchange interaction. Remarkably, the hysteretic magnetoresistances of two-dimensional electron gas at the SrTiO$_3$/LaTiO$_3$ interface are entirely determined by the metamagnetic phase transitions of the underlying TbScO$_3$ substrate. Our results pave a novel route to engineer the spin polarization of low-dimensional electron systems in 4$f$ antiferromagnet-based heterostructures.

cond-mat.str-el↗

arXiv2019

Robust edge photocurrent response on layered Type II Weyl semimetal WTe2

Photo sensing and energy harvesting based on exotic properties of quantum materials and new operation principles have great potentials to break the fundamental performance limit of conventional photodetectors and solar cells. As topological nontrivial materials, Weyl semimetals have demonstrated novel optoelectronic properties that promise potential applications in photo detection and energy harvesting arising from their gapless linear dispersion near Weyl nodes and Berry field enhanced nonlinear optical effect at the vicinity of Weyl nodes. In this work, we demonstrate robust photocurrent generation from charge separation of photoexctied electron-hole pairs at the edge of Td-WTe2, a type-II Weyl semimetal, due to crystalline-symmetry breaking along certain crystal fracture directions and possibly enhanced by robust fermi-arc type surface states. Using scanning photocurrent microscopy (SPCM) measurements, we further demonstrate that the edge current response is robust over a wide excitation photon energy. We find that this robust feature is highly generic, and shall arise universally in a wide class of quantum materials with similar crystal symmetries. In addition, possible connections between these edge photocurrents and topological properties of Weyl semimetals are explored. The robust and generic edge current response demonstrated in this work provides a new type of charge separation mechanism for photosensing and energy harvesting over broad wavelength range.

cond-mat.mes-hall↗

arXiv2017

Visualizing Strain-induced Pseudo magnetic Fields in Graphene through an hBN Magnifying Glass

The remarkable properties of graphene are inherent to its 2D honeycomb lattice structure. Its low dimensionality, which makes it possible to rearrange the atoms by applying an external force, offers the intriguing prospect of mechanically controlling the electronic properties. In the presence of strain, graphene develops a pseudo-magnetic field (PMF) which reconstructs the band structure into pseudo Landau levels (PLLs). However, a feasible route to realizing, characterizing and controlling PMFs is still lacking. Here we report on a method to generate and characterize PMFs in a graphene membrane supported on nano-pillars. A direct measure of the local strain is achieved by using the magnifying effect of the Moiré pattern formed against a hexagonal Boron Nitride (hBN) substrate under scanning tunneling microscopy (STM). We quantify the strain induced PMF through the PLLs spectra observed in scanning tunneling spectroscopy (STS). This work provides a pathway to strain induced engineering and electro-mechanical graphene based devices.

cond-mat.mes-hall↗