arXiv subjects

Juraj Mnich

Publications and source records attributed to Juraj Mnich.

3 recordsLinked to original sources

arXiv2026

Electrode-tunable nonlocal charge to spin conversion in WSe$_2$-intercalated bilayer graphene

We show that intercalating a WSe$_2$ monolayer into bilayer graphene mediates wavefunction hybridization of the two graphene layers at the Fermi level. These delocalized states entangle both graphene layers, creating a synthetic bilayer graphene with interlayer coupling comparable to the proximity-induced spin-orbit interaction. By analyzing transport properties of a four-terminal device, we demonstrate equal entangled parallel charge currents in both graphene layers, allowing us to unlock the hidden Rashba states via layer-selective chirality manifested in opposite-signed local Rashba-Edelstein signals. We also show nonlocal Rashba-Edelstein and spin Hall effects activated in one graphene layer when a charge current is driven in a spatially adjacent graphene layer. This effect is robust to the twist angle modulation between graphene and WSe$_2$, and to the applied electric field, suggesting its durability.

cond-mat.mes-hall↗

arXiv2026

Stacking switching between correlation-protected radial Rashba field and persistent spin textures in graphene encapsulated by 1T-TaS$_2$ monolayers

We investigate the electronic structure, spin textures, and charge to spin/orbital transport in graphene encapsulated by 1T-TaS$_{2}$ monolayers in the charge density wave phase. Using first-principles calculations, tight-binding modeling, and the Kubo formalism, we show that the encapsulation stacking dictates fundamentally distinct transport regimes. In the asymmetrical (AA) stacking, proximity fields from both interfaces constructively interfere, yielding a cumulative Rashba phase of nearly $π/2$. This pure radial Rashba spin pattern leads to the unconventional Rashba-Edelstein effect, which robustly dominates over the conventional response by a factor of 35 across a wide energy range. Conversely, the symmetrical (AA') stacking preserves a horizontal mirror symmetry, establishing a stable, purely out-of-plane persistent spin texture. Furthermore, the computed orbital Hall effect is exceptionally efficient, surpassing the spin Hall effect by three orders of magnitude. Within the proximity-induced spectral gaps, the orbital Hall conductivity exhibits a finite plateau, whereas the spin Hall conductivity vanishes. Our findings establish graphene encapsulated heterostructures as a promising system for realizing distinct charge to spin and charge to orbital interconversion regimes determined by the choice of stacking order.

cond-mat.mes-hall↗

arXiv2025

Ferroelectric switching control of spin current in graphene proximitized by In$_2$Se$_3$

By utilizing the proximity effect, we introduce a platform that exploits ferroelectric switching to modulate spin currents in graphene proximitized by ferroelectric In$_2$Se$_3$ monolayer. Through first-principles calculations and tight-binding modeling, we studied the electronic structure of graphene/In$_2$Se$_3$ heterostructure for twist angles of 0$^{\circ}$ and 17.5$^{\circ}$, considering both ferroelectric polarizations. We discover that switching the ferroelectric polarization reverses the sign of the charge-to-spin conversion coefficients, acting as a chirality switch of the in-plane spin texture in graphene. For the twisted heterostructure, we observed emergence of unconventional radial Rashba field for one ferroelectric polarization direction. Additionally, we demonstrated that the Rashba phase can be directly extracted from the ratio of conversion efficiency coefficients, providing a straightforward approach to characterize the in-plane spin texture in graphene. All the unique features of the studied graphene/In$_2$Se$_3$ heterostructure can be experimentally detected, offering a promising approach for developing advanced spintronic devices with enhanced performance and efficiency.

cond-mat.mtrl-sci↗