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Justin W Wells

Publications and source records attributed to Justin W Wells.

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Chiral Quantum well Rashba splitting in Sb monolayer on Au(111)

We present a comprehensive investigation into the atomic and electronic structures of a single-layer Sb(110) rhombohedral crystal formed on an Au(111) substrate. Low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM) reveal a pure two-dimensional (2D) Sb stripe structure, composed of a pair of Sb(110) unit cells located in a chiral configuration with mirror symmetry breaking perpendicular to the direction of the bright stripe. Based on angle-resolved photoemission spectroscopy (ARPES) measurements and Sb-weighted band structure from density functional theory calculations, we report the unambiguous determination of Rashba spin-orbit coupled bands from the 2D Sb film, exhibiting a chiral symmetry in the electronic structure with the crossing points located at the $Γ$ point and the X point, respectively. Moreover, From dI/dV spectra and density of states (DOS) calculations, the quantum well (QW) Rashba-type states induced by the in-plane mirror symmetry breaking in the Sb stripe structure have been identified. Orbital decomposition of the projected band structure reveals that hybridization between Sb py states and Au states modifies the spin splitting of the QW states, attributed to the intrinsic strong SOC of Au states introduced into the QW states.

cond-mat.mtrl-sci

Phase Transition of single-layer vanadium diselenide on Au(111) with distinguished electronic structures

Herein, we report the reversible structural transition of single-layer VSe2 grown on Au(111) through alternating thermal annealing and Se replenishment. Using scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES), we demonstrate the epitaxial growth of high-quality VSe2 on Au(111) with the octahedral (1T) structure and the Se-vacancy-induced transformation of VSe2 from the metallic moiré (1T) phase to the semiconducting (2H) phase. With convincing agreement between the experimental results and DFT calculations, the nanostructure near the grain boundary in the defective intermediate phase is confirmed, as well as the reaction pathway with Se gradually depleting at elevated temperatures. Importantly, it is revealed that the density of the linear Se defects plays a crucial role in the formation of the 2H domain phase due to the increment of the in-plane lattice parameter after Se desorption and the better thermal stability of the 2H phase compared to the 1T phase. The proper control of the density of Se atoms in the topmost Se layer of VSe2 could feasibly manipulate the ratio between the 1T phase and the 2H phase in the steak-shaped domain, which is regarded as a good platform for 2D homojunctions in nanoelectronics.

cond-mat.mtrl-sci