arXiv subjects

Justin W. Wells

Publications and source records attributed to Justin W. Wells.

At least 19 recordsLinked to original sources

arXiv2025

Tailoring the Electronic Structure of Ni(111) by Alloying with Sb Ad-Atoms

Surface alloying can alter surface electronic and magnetic properties, which are key parameters when developing new materials tailored for specific applications. A magnetic surface alloy was formed by depositing Sb on Ni(111) at elevated temperatures, yielding new electronic states at the Fermi level and modifying the Ni-derived bandstructure. In particular, it changed the electron occupancy of the spin-polarized surface resonance bands, which may affect the magnetic properties of the surface and its associated many-body effects. By fitting a finite element model to angle-dependent core level measurements, similar amounts of Sb and Ni were found within the first few atomic layers to indicate a near-surface composition similar to the bulk alloy NiSb. Annealing to higher temperatures post-growth further improved the crystalline quality of the surface. Our investigation of the surface alloy's crystallinity, chemical composition, and layer structure lays the basis for future studies of how its electronic and magnetic properties can be modified.

cond-mat.mtrl-sci↗

arXiv2025

Anomalous spin-optical helical effect in Ti-based kagome metal

The kagome lattice stands as a rich platform for hosting a wide array of correlated quantum phenomena, ranging from charge density waves and superconductivity to electron nematicity and loop current states. Direct detection of loop currents in kagome systems has remained a formidable challenge due to their intricate spatial arrangements and the weak magnetic field signatures they produce. This has left their existence and underlying mechanisms a topic of intense debate. In this work, we uncover a hallmark reconcilable with loop currents: spin handedness-selective signals that surpass conventional dichroic, spin, and spin-dichroic responses. We observe this phenomenon in the kagome metal CsTi$_3$Bi$_5$ and we call it the anomalous spin-optical helical effect. This effect arises from the coupling of light' s helicity with spin-orbital electron correlations, providing a groundbreaking method to visualize loop currents in quantum materials. Our discovery not only enriches the debate surrounding loop currents but also paves the way for new strategies to exploit the electronic phases of quantum materials via light-matter interaction.

cond-mat.str-el↗

arXiv2024

Pomeranchuk instability from electronic correlations in CsTi$_3$Bi$_5$ kagome metal

Among many-body instabilities in correlated quantum systems, electronic nematicity, defined by the spontaneous breaking of rotational symmetry, has emerged as a critical phenomenon, particularly within high-temperature superconductors. Recently, this behavior has been identified in CsTi$_3$Bi$_5$, a member of the AV$_3$Sb$_5$ (A = K, Rb, Cs) kagome family, recognized for its intricate and unconventional quantum phases. Despite accumulating indirect evidence, the fundamental mechanisms driving nematicity in CsTi$_3$Bi$_5$ remain inadequately understood, sparking ongoing debates. In this study, we employ polarization-dependent angle-resolved photoemission spectroscopy to reveal definitive signatures of an orbital-selective nematic deformation in the electronic structure of CsTi$_3$Bi$_5$. This direct experimental evidence underscores the pivotal role of orbital degrees of freedom in symmetry breaking, providing new insights into the complex electronic environment. By applying the functional renormalization group technique to a fully interacting ab initio model, we demonstrate the emergence of a finite angular momentum ($d$-wave) Pomeranchuk instability in CsTi$_3$Bi$_5$, driven by the concomitant action of electronic correlations within specific orbital channels and chemical potential detuning away from Van Hove singularities. By elucidating the connection between orbital correlations and symmetry-breaking instabilities, this work lays a crucial foundation for future investigations into the broader role of orbital selectivity in quantum materials, with far-reaching implications for the design and manipulation of novel electronic phases.

cond-mat.str-el↗

arXiv2024

Direct measurement of 2DEG states in shallow Si:Sb $δ$-layers

We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $δ$-layers. We show that, in spite of the known challenges in producing highly confined Sb $δ$-layers, sufficient confinement is created such that the lowest conduction band states ($Γ$ states, studied in depth in other silicon $δ$-layers), become occupied and can be observed using angle-resolved photoemission spectroscopy. The electronic structure of the Si:Sb $δ$-layers closely resembles that of Si:P systems, where the observed conduction band is near-parabolic and slightly anisotropic in the $\mathbf{k}_\parallel$ plane. The observed $Γ$ state extends ~ 1 nm in the out-of-plane direction, which is slightly wider than the 1/3 monolayer thick dopant distribution. This is caused by a small segregation of the dopant layer, which is nevertheless minimal when comparing with earlier published attempts. Our results serve to demonstrate that Sb is still a feasible dopant alternative for use in the semiconductor $δ$-layer platform, providing similar electronic functionality to Si:P systems. Additionally, it has the advantages of being less expensive, more controllable, safer to handle, and more compatible with industrial patterning techniques. Si:Sb is therefore a viable platform for emerging quantum device applications.

cond-mat.mtrl-sci↗

arXiv2024

Initial Stages of Water Absorption on $\mathbf{CeO}_{2}$ Surfaces at Very Low Temperatures for Understanding Anti-Icing Coatings

Anti-icing coatings are intended to prevent ice formation on surfaces, minimising the risk of surface-related damage and also reducing ice-related hazards in society. $\mathrm{CeO}_{2}$ coatings are robust, hydrophobic, and transmit light, thus they are suitable for a range of applications. However, their evolving surface chemistry during the initial stages of $\mathrm{H}_{2}\mathrm{O}$ exposure at very low temperatures has not been investigated, despite that this is important for understanding their anti-icing properties. To study this, $\mathrm{CeO}_{2}$ coatings were grown by sputter deposition, cooled to $\approx100\,$K and exposed to a $\mathrm{H}_{2}\mathrm{O}$ atmosphere at $1\times10^{-8}\,\mathrm{mbar}$. We demonstrate the usefulness of X-ray photoelectron spectroscopy (XPS) as a tool for investigating the anti-icing properties of surfaces. We present XPS measurements of $\mathrm{CeO}_{2}$ coatings before and after exposure to $\mathrm{H}_{2}\mathrm{O}$, in-situ and at cryogenic temperatures. XPS reveals that little to no ice forms on the surface of $\mathrm{CeO}_{2}$ after the $\mathrm{H}_{2}\mathrm{O}$ exposure at $\approx100\,$K. In contrast, ice was observed all over the sample holder on which the $\mathrm{CeO}_{2}$ was mounted. These findings suggest that $\mathrm{CeO}_{2}$ is a promising candidate for future anti-icing coatings.

physics.chem-ph↗

arXiv2023

Disentangling Electron-Boson Interactions on the Surface of a Familiar Ferromagnet

We report energy renormalizations from electron-phonon and electron-magnon interactions in spin minority surface resonances on Ni(111). The different interactions are identified, disentangled, and quantified from the characteristic signatures they provide to the complex self-energy and the largely different binding energies at which they occur. The observed electron-magnon interactions exhibit a strong dependence on momentum and energy band position in the bulk Brillouin zone. In contrast, electron-phonon interactions from the same bands appear to be relatively momentum- and symmetry-independent. Additionally, a moderately strong ($λ>0.5$) electron-phonon interaction is distinguished from a near-parabolic spin majority band not crossing the Fermi level.

cond-mat.mtrl-sci↗

arXiv2023

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Understanding the collective behavior of the quasiparticles in solid-state systems underpins the field of non-volatile electronics, including the opportunity to control many-body effects for well-desired physical phenomena and their applications. Hexagonal boron nitride (hBN) is a wide energy bandgap semiconductor, showing immense potential as a platform for low-dimensional device heterostructures. It is an inert dielectric used for gated devices, having a negligible orbital hybridization when placed in contact with other systems. Despite its inertness, we discover a large electron mass enhancement in few-layer hBN affecting the lifetime of the $π$-band states. We show that the renormalization is phonon-mediated and consistent with both single- and multiple-phonon scattering events. Our findings thus unveil a so-far unknown many-body state in a wide-bandgap insulator, having important implications for devices using hBN as one of their building blocks.

cond-mat.mtrl-sci↗

arXiv2023

Dynamics and Resilience of the Charge Density Wave in a bilayer kagome metal

Long-range electronic order descending from a metallic parent state constitutes a rich playground to study the intricate interplay of structural and electronic degrees of freedom. With dispersive and correlation features as multifold as topological Dirac-like itinerant states, van-Hove singularities, correlated flat bands, and magnetic transitions at low temperature, kagome metals are located in the most interesting regime where both phonon and electronically mediated couplings are significant. Several of these systems undergo a charge density wave (CDW) transition, and the van-Hove singularities, which are intrinsic to the kagome tiling, have been conjectured to play a key role in mediating such an instability. However, to date, the origin and the main driving force behind this charge order is elusive. Here, we use the topological bilayer kagome metal ScV6Sn6 as a platform to investigate this puzzling problem, since it features both kagome-derived nested Fermi surface and van-Hove singularities near the Fermi level, and a CDW phase that affects the susceptibility, the neutron scattering, and the specific heat, similarly to the siblings AV3Sb5 (A = K, Rb, Cs) and FeGe. We report on our findings from high-resolution angle-resolved photoemission, density functional theory, and time-resolved optical spectroscopy to unveil the dynamics of its CDW phase. We identify the structural degrees of freedom to play a fundamental role in the stabilization of charge order. Along with a comprehensive analysis of the subdominant impact from electronic correlations, we find ScV6Sn6 to feature an instance of charge density wave order that predominantly originates from phonons. As we shed light on the emergent phonon profile in the low-temperature ordered regime, our findings pave the way for a deeper understanding of ordering phenomena in all CDW kagome metals.

cond-mat.str-el↗

arXiv2022

Probing the Atomic Arrangement of Sub-Surface Dopants in a Silicon Quantum Device Platform

High-density structures of sub-surface phosphorus dopants in silicon continue to garner interest as a silicon-based quantum computer platform, however, a much-needed confirmation of their dopant arrangement has been lacking. In this work, we take advantage of the chemical specificity of X-ray photoelectron diffraction to obtain the precise structural configuration of P dopants in sub-surface Si:P $δ$-layers. The growth of $δ$-layer systems with different levels of doping is carefully studied and verified using X-ray photoelectron spectroscopy and low-energy electron diffraction. Subsequent XPD measurements reveal that in all cases, the dopants primarily substitute with Si atoms from the host material. Furthermore, no signs of free carrier-inhibiting P$-$P dimerization can be observed. Our observations not only settle a nearly decade-long debate about the dopant arrangement but also demonstrate that XPD is well suited to study sub-surface dopant structures. This work thus provides valuable input for an updated understanding of the behavior of Si:P $δ$-layers and the modeling of their derived quantum devices.

cond-mat.mtrl-sci↗

arXiv2022

One-Dimensional Spin-Polarised Surface States -- A Comparison of Bi(112) with Other Vicinal Bismuth Surfaces

Vicinal surfaces of bismuth are unique test-beds for investigating one-dimensional (1D) spin-polarised surface states that may one day be used in spintronic devices. In this work, two such states have been observed for the (112) surface when measured using angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES, and when calculated using a tight-binding (TB) model and with density functional theory (DFT). The surface states appear as elongated Dirac-cones which are 1D and almost dispersionless in the ${k}_{\text{y}}$-direction, but disperse with energy in the orthogonal ${k}_{\text{x}}$-direction to form two ``$\times$''-like features centered at the ${k}_{\text{y}}$-line through $Γ$. Unlike many materials considered for spintronic applications, their 1D nature suggests that conductivity and spin-transport properties are highly dependent on direction. The spin-polarisation of the surface states is mainly in-plane and parallel to the 1D state, but there are signs of a tilted out-of-plane spin-component for one of them. The Bi(112) surface states resemble those found for other vicinal surfaces of bismuth, strongly indicating that their existence and general properties are robust properties of vicinal surfaces of bismuth. Furthermore, differences in the details of the states, particularly related to their spin-polarisation, suggest that spin-transport properties may be engineered simply by precise cutting and polishing of the crystal.

cond-mat.mtrl-sci↗

arXiv2021

Electron-magnon coupling and quasiparticle lifetimes on the surface of a topological insulator

The fermionic self-energy on the surface of a topological insulator proximity coupled to ferro- and antiferromagnetic insulators is studied. An enhanced electron-magnon coupling is achieved by allowing the electrons on the surface of the topological insulator to have a different exchange coupling to the two sublattices of the antiferromagnet. Such a system is therefore seen as superior to a ferromagnetic interface for the realization of magnon-mediated superconductivity. The increased electron-magnon-coupling simultaneously increases the self-energy effects. In this paper we show how the inverse quasiparticle lifetime and energy renormalization on the surface of the topological insulator can be kept low close to the Fermi level by using a magnetic insulator with a sufficient easy-axis anisotropy. We find that the antiferromagnetic case is most interesting from both a theoretical and an experimental standpoint due to the increased electron-magnon coupling, combined with a reduced need for easy-axis anisotropy compared to the ferromagnetic case. We also consider a set of material and instrumental parameters where these self-energies should be measurable in angle-resolved photoemission spectroscopy experiments, paving the way for a measurement of the interfacial exchange coupling strength.

cond-mat.mtrl-sci↗

arXiv2020

Low Temperature Growth of Graphene on Semiconductor

The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition metal treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around $450-500^\circ\text{C}$. From the chemical reaction between SiC and thin films of Fe or Ru, $\text{sp}^{3}$ carbon is liberated from the SiC crystal and converted to $\text{sp}^{2}$ carbon at the surface. The quality of the graphene is demonstrated using angle-resolved photoemission spectroscopy and low-energy electron diffraction. Furthermore, the orientation and placement of the graphene layers relative to the SiC substrate is verified using angle-resolved absorption spectroscopy and energy-dependent photoelectron spectroscopy, respectively. With subsequent thermal treatments to higher temperatures, a steerable diffusion of the metal layers into the bulk SiC is achieved. The result is graphene supported on magnetic silicide or optionally, directly on semiconductor, at temperatures ideal for further large-scale processing into graphene based device structures.

cond-mat.mtrl-sci↗

arXiv2020

Phonon-mediated superconductivity in doped monolayer materials

Insight into why superconductivity in pristine and doped monolayer graphene seems strongly suppressed has been central for the recent years' various creative approaches to realize superconductivity in graphene and graphene-like systems. We provide further insight by studying electron-phonon coupling and superconductivity in doped monolayer graphene and hexagonal boron nitride based on intrinsic phonon modes. Solving the graphene gap equation using a detailed model for the effective attraction based on electron tight binding and phonon force constant models, the various system parameters can be tuned at will. Consistent with results in the literature, we find slight gap modulations along the Fermi surface, and the high energy phonon modes are shown to be the most significant for the superconductivity instability. The Coulomb interaction plays a major role in suppressing superconductivity at realistic dopings. Motivated by the direct onset of a large density of states at the Fermi surface for small charge dopings in hexagonal boron nitride, we also calculate the dimensionless electron-phonon coupling strength there, but the comparatively large density of states cannot immediately be capitalized on, and the charge doping necessary to obtain significant electron-phonon coupling is similar to the value in graphene.

cond-mat.supr-con↗

arXiv2019

Observation and origin of the $Δ$-manifold in Si:P $δ$-layers

By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinement effects induced by reducing the thickness of the dopant layer, from $4.0$\,nm to the single-layer limit, are explored using angle-resolved photoemission spectroscopy. The location of theoretically predicted, but experimentally hitherto unobserved, quantum well states known as the $Δ$-manifold is revealed. Moreover, the number of carriers hosted within the $Δ$-manifold is shown to be strongly affected by the confinement potential, opening the possibility to select carrier characteristics by tuning the dopant-layer thickness.

cond-mat.mtrl-sci↗

arXiv2019

The Sub-band Structure of Atomically Sharp Dopant Profiles in Silicon

The downscaling of silicon-based structures and proto-devices has now reached the single atom scale, representing an important milestone for the development of a silicon-based quantum computer. One especially notable platform for atomic scale device fabrication is the so-called SiP delta-layer, consisting of an ultra dense and sharp layer of dopants within a semiconductor host. Whilst several alternatives exist, phosphorus dopants in silicon have drawn the most interest, and it is on this platform that many quantum proto-devices have been successfully demonstrated. Motivated by this, both calculations and experiments have been dedicated to understanding the electronic structure of the SiP delta-layer platform. In this work, we use high resolution angle-resolved photoemission spectroscopy (ARPES) to reveal the structure of the electronic states which exist because of the high dopant density of the SiP delta-layer. In contrast to published theoretical work, we resolve three distinct bands, the most occupied of which shows a large anisotropy and significant deviation from simple parabolic behaviour. We investigate the possible origins of this fine structure, and conclude that it is primarily a consequence of the dielectric constant being large (ca. double that of bulk Si). Incorporating this factor into tight binding calculations leads to a major revision of band structure; specifically, the existence of a third band, the separation of the bands, and the departure from purely parabolic behaviour. This new understanding of the bandstructure has important implications for quantum proto-devices which are built on the SiP delta-layer platform.

cond-mat.mes-hall↗

arXiv2017

Strong-coupling charge density wave in a one-dimensional topological metal

Scanning tunnelling microscopy and low energy electron diffraction show a dimerization-like reconstruction in the one-dimensional atomic chains on Bi(114) at low temperatures. While one-dimensional systems are generally unstable against such a distortion, its observation is not expected for this particular surface, since there are several factors that should prevent it: One is the particular spin texture of the Fermi surface, which resembles a one-dimensional topological state, and spin protection should hence prevent the formation of the reconstruction. The second is the very short nesting vector $2 k_F$, which is inconsistent with the observed lattice distortion. A nesting-driven mechanism of the reconstruction is indeed excluded by the absence of any changes in the electronic structure near the Fermi surface, as observed by angle-resolved photoemission spectroscopy. However, distinct changes in the electronic structure at higher binding energies are found to accompany the structural phase transition. This, as well as the observed short correlation length of the pairing distortion, suggest that the transition is of the strong coupling type and driven by phonon entropy rather than electronic entropy.

cond-mat.mes-hall↗

arXiv2016

Strong electron-phonon coupling in the sigma band of graphene

First-principles studies of the electron-phonon coupling in graphene predict a high coupling strength for the $σ$ band with $λ$ values of up to 0.9. Near the top of the $σ$ band, $λ$ is found to be $\approx 0.7$. This value is consistent with the recently observed kinks in the $σ$ band dispersion by angle-resolved photoemission. While the photoemission intensity from the $σ$ band is strongly influenced by matrix elements due to sub-lattice interference, these effects differ significantly for data taken in the first and neighboring Brillouin zones. This can be exploited to disentangle the influence of matrix elements and electron-phonon coupling. A rigorous analysis of the experimentally determined complex self-energy using Kramers-Kronig transformations further supports the assignment of the observed kinks to strong electron-phonon coupling and yields a coupling constant of $0.6(1)$, in excellent agreement with the calculations.

cond-mat.mes-hall↗

arXiv2014

Silver catalyzed Fluorouracil degradation; a promising new role for graphene

Chemotherapy treatment usually involves the delivery of fluorouracil (5-Fu) together with other drugs through central venous catheters. Catheters and their connectors are increasingly coated (or impregnated) with silver or argentic alloys/compounds. Complications such as broken catheters are common, leading to additional suffering for patients and increased medical costs. Here, we uncover a likely cause of such failure through a study of the surface chemistry relevant to chemotherapy drug delivery, i.e. between 5-Fu and silver. We show that silver catalytically decomposes 5-Fu, releasing HF as a product. This reaction compromises the efficacy of the treatment, and at the same time, releases HF which is damaging to both patient and catheter. Our study not only reveals an important reaction which has so far been overlooked, but additionally allows us to propose that graphene coatings inhibit such a reaction and offer superior performance for cancer treatment applications.

cond-mat.mtrl-sci↗