arXiv subjects

Juzar Thingna

Publications and source records attributed to Juzar Thingna.

43 records · Page 3Linked to original sources

arXiv2013

Reduced density matrix for nonequilibrium steady states: A modified Redfield solution approach

We describe a method to obtain the reduced density matrix (RDM) correct up to second order in system-bath coupling in \emph{nonequilibrium} steady state situations. The RDM is obtained via a scheme based on analytic continuation, using the time-local Redfield-like quantum master equation, which was earlier used by the same authors [J. Chem. Phys. \textbf{136}, 194110 (2012)] to obtain the correct thermal equilibrium description. This nonequilibrium modified Redfield solution is then corroborated with the exact RDM obtained via the nonequilibrium Green's function technique for the quantum harmonic oscillator. Lastly, the scheme is compared to different quantum master equations (QMEs), namely the time-local Redfield-like and the Lindblad-like QMEs, in order to illustrate the differences between each of these approaches.

cond-mat.stat-mech↗

arXiv2013

Nonlinearity enhanced interfacial thermal conductance and rectification

We study the nonlinear interfacial thermal transport across atomic junctions by the quantum self-consistent mean field (QSCMF) theory based on nonequilibrium Green's function approach; the QSCMF theory we propose is very precise and matches well with the exact results from quantum master equations. The nonlinearity at the interface is studied by effective temperature dependent interfacial coupling calculated from the QSCMF theory. We find that nonlinearity can provide an extra channel for phonon transport in addition to the phonon scattering which usually blocks heat transfer. For weak linearly coupled interface, the nonlinearity can enhance the interfacial thermal transport; with increasing nonlinearity or temperature, the thermal conductance shows nonmonotonical behavior. The interfacial nonlinearity also induces thermal rectification, which depends on the mismatch of the two leads and also the interfacial linear coupling.

cond-mat.stat-mech↗

arXiv2013

Nonequilibrium Green's function method for quantum thermal transport

This review deals with the nonequilibrium Green's function (NEGF) method applied to the problems of energy transport due to atomic vibrations (phonons), primarily for small junction systems. We present a pedagogical introduction to the subject, deriving some of the well-known results such as the Laudauer-like formula for heat current in ballistic systems. The main aim of the review is to build the machinery of the method so that it can be applied to other situations, which are not directly treated here. In addition to the above, we consider a number of applications of NEGF, not in routine model system calculations, but in a few new aspects showing the power and usefulness of the formalism. In particular, we discuss the problems of multiple leads, coupled left-right-lead system, and system without a center. We also apply the method to the problem of full counting statistics. In the case of nonlinear systems, we make general comments on the thermal expansion effect, phonon relaxation time, and a certain class of mean-field approximations. Lastly, we examine the relationship between NEGF, reduced density matrix, and master equation approaches to thermal transport.

cond-mat.mes-hall↗

arXiv2012

Steady state thermal transport in anharmonic systems: Application to molecular junctions

We develop a general theory for thermal transport in anharmonic systems under the weak system-bath coupling approximation similar to the quantum master equation formalism. A current operator is derived, which is valid not only in the steady state, but in the transient regime as well. Here we focus on the effects of anharmonicity on the steady-state thermal conductance of a mono and diatomic molecular junctions. We also study molecules being confined in a double-well potential. We find that when the molecules have a non-linear on-site potential the low-temperature thermal conductance is dramatically affected by the strength of non-linearity, whereas for the diatomic molecule connected by an anharmonic spring the strength of anharmonicity plays almost no role in the low-temperature regime. In case of the molecules confined in a double-well potential we find that the height of the barrier greatly affects the thermal conductance; once the molecules can feel the effect of the barrier we observe negative differential thermal conductance at both high and low temperatures.

cond-mat.mes-hall↗

arXiv2012

Generalized Gibbs state with modified Redfield solution: Exact agreement up to second order

A novel scheme for the steady state solution of the standard Redfield quantum master equation is developed which yields agreement with the exact result for the corresponding reduced density matrix up to second order in the system-bath coupling strength. We achieve this objective by use of an analytic continuation of the off-diagonal matrix elements of the Redfield solution towards its diagonal limit. Notably, our scheme does not require the provision of yet higher order relaxation tensors. Testing this modified method for a heat bath consisting of a collection of harmonic oscillators we assess that the system relaxes towards its correct coupling-dependent, generalized quantum Gibbs state in second order. We numerically compare our formulation for a damped quantum harmonic system with the nonequilibrium Green's function formalism: we find good agreement at low temperatures for coupling strengths that are even larger than expected from the very regime of validity of the second-order Redfield quantum master equation. Yet another advantage of our method is that it markedly reduces the numerical complexity of the problem; thus allowing to study efficiently large-sized \emph{system} Hilbert spaces.

cond-mat.stat-mech↗

arXiv2011

Geometrical effects on spin injection: 3D spin drift diffusion model

We discuss a three-dimensional (3D) spin drift diffusion (SDD) model to inject spin from a ferromagnet (FM) to a normal metal (N) or semiconductor (SC). Using this model we investigate the problem of spin injection into isotropic materials like GaAs and study the effect of FM contact area and SC thickness on spin injection. We find that in order to achieve detectable spin injection a small contact area or thick SC samples are essential for direct contact spin injection devices. We investigate the use of thin metal films (Cu) proposed by S.B. Kumar et al. and show that they are an excellent substitute for tunnelling barriers (TB) in the regime of small contact area. Since most tunnelling barriers are prone to pinhole defects, we study the effect of pinholes in AlO tunnelling barriers and show that the reduction in the spin-injection ratio ($γ$) is solely due to the effective area of the pinholes and there is no correlation between the number of pinholes and the spin injection ratio.

cond-mat.mes-hall↗

arXiv2010

Photo-absorption spectra of small hydrogenated silicon clusters using the time-dependent density functional theory

We present a systematic study of the photo-absorption spectra of various Si$_{n}$H$_{m}$ clusters (n=1-10, m=1-14) using the time-dependent density functional theory (TDDFT). The method uses a real-time, real-space implementation of TDDFT involving full propagation of the time dependent Kohn-Sham equations. Our results for SiH$_{4}$ and Si$_{2}$H$_{6}$ show good agreement with the earlier calculations and experimental data. We find that for small clusters (n<7) the photo-absorption spectrum is atomic-like while for the larger clusters it shows bulk-like behaviour. We study the photo-absorption spectra of silicon clusters as a function of hydrogenation. For single hydrogenation, we find that in general, the absorption optical gap decreases and as the number of silicon atoms increase the effect of a single hydrogen atom on the optical gap diminishes. For further hydrogenation the optical gap increases and for the fully hydrogenated clusters the optical gap is larger compared to corresponding pure silicon clusters.

cond-mat.mes-hall↗