arXiv subjects

Jyesta M. Adhidewata

Publications and source records attributed to Jyesta M. Adhidewata.

4 recordsLinked to original sources

arXiv2026

Excitation and tunneling spectra of a fractional quantum Hall system in the thin cylinder limit

The excitations of fractional quantum Hall effect (FQHE) states have been largely inaccessible to experimental probes until recently. New electron scanning tunneling microscopy (STM) results from Hu et.al. (arXiv:2308.05789) show promise in detecting and identifying these excited states via the local density of states (LDOS) spectrum. On a torus, there exists a mapping {from the lowest Landau level states} to a 1D lattice {with a Hamiltonian that features} dipole moment conservation. In this work, we apply perturbation theory starting from the thin cylinder limit ($L_x \rightarrow \infty, L_y <l_B$ for torus dimensions $L_x$ and $L_y$ {and magnetic length $l_B$}) to obtain an analytical approach to the low-lying neutral and charged excitations of the $ν=1/3$ FQHE state. Notably, in the thin cylinder we can systematically enumerate all the low-lying excitations by the patterns of 'dipoles' formed by the electron occupation pattern on the 1D lattice. We find that the thin-cylinder limit predicts a significant dispersion of the low-lying neutral excitations but sharpness of the LDOS spectra, which measure charged excitations. We also discuss connections between our work and several different approaches to the FQHE STM spectra, including those using the composite fermion theory. Numerical exact diagonalization beyond the thin-cylinder limit suggests that the energies of charged excitations remain largely confined to a narrow range of energies, which in experiments might appear as a single peak.

cond-mat.mes-hall↗

arXiv2023

Trigonal warping effects on optical properties of anomalous Hall materials

The topological nature of topological insulators are related to the symmetries present in the material, for example, quantum spin Hall effect can be observed in topological insulators with time reversal symmetry, while broken time reversal symmetry may give rise to the presence of anomalous quantum Hall effect (AHE). Here we consider the effects of broken rotational symmetry on the Dirac cone of an AHE material by adding trigonal warping terms to the Dirac Hamiltonian. We calculate the linear optical conductivity semi-analytically to show how by breaking the rotational symmetry we can obtain a topologically distinct phase. The addition of trigonal warping terms causes the emergence of additional Dirac cones, which when combined has a total Chern number of $\mp 1$ instead of $\pm 1/2$. This results in drastic changes in the anomalous Hall and longitudinal conductivity. The trigonal warping terms also activates the higher order Hall responses which does not exist in a $\mathcal{R}$ symmetric conventional Dirac material. We found the presence of a non-zero second order Hall current even in the absence of Berry curvature dipole. This shift current is also unaffected by the chirality of the Dirac cone, which should lead to a non-zero Hall current in time reversal symmetric systems.

cond-mat.mes-hall↗

arXiv2022

Thermoelectric properties of semiconducting materials with parabolic and pudding-mold band structures

We theoretically investigate the thermoelectric properties of semiconducting (gapped) materials by varying the degrees of polynomials in their energy dispersion relations, in which either the valence or conduction energy dispersion depends on the wave vector raised to the power of two, four, and six. The thermoelectric transport coefficients such as the Seebeck coefficient, electrical conductivity, and thermal conductivity are calculated within the linearized Boltzmann transport theory combined with the relaxation time approximation. We consider various effects such as band gaps, dimensionalities, and dispersion powers to understand the conditions that can give the optimal thermoelectric efficiency or figure of merit ($ZT$). Our calculations show that the so-called pudding-mold band structure produces larger electrical and thermal conductivities than the parabolic band, but no significant difference is found in the Seebeck coefficients of the pudding-mold and parabolic bands. Furthermore, we find that a high $ZT$ can be obtained by tuning the band gap of the material to an optimum value simultaneously with breaking the band symmetry. The largest $ZT$ is found in a combination of two-contrasting polynomial powers in the dispersion relations of valence and conduction bands. This band asymmetry also shifts the charge neutrality away from the undoped level and allows optimal $ZT$ to be located at a smaller chemical potential. With some reasonable values of thermal conductivity parameters, the maximum $ZT$ for the bulk systems can be larger than 1, while for one-dimensional systems it can even reach almost 4. We expect this work to trigger high-throughput calculations for screening of potential thermoelectric materials combining various polynomial powers in the energy dispersion relations of semiconductors.

cond-mat.mtrl-sci↗

arXiv2022

Enhanced thermoelectric performance by van Hove singularities in the density of states of type-II nodal-line semimetals

The effects of the unique density of states (DOS) of a topological type-II nodal-line semimetal (NLS) on its thermoelectric (TE) transport properties are investigated through a combination of semi-analytical and first-principles methods with "spinless Mg$_3$Bi$_2$" as artificial material. The DOS in such a type-II NLS possesses two van Hove singularities near the energy of the nodal line that leads to a large $S$ value compared to the normal metals. Combined with the linear band at the nodal line that gives high electrical conductivity $σ$, the type-II NLS can exhibit a relatively high TE power factor ($\text{PF}=S^2σ$) at the nodal line. In particular, we find $\text{PF} \sim 60$ $μ$W/cmK$^2$ at 300 K for the n-type Mg$_3$Bi$_2$ by considering the electron-phonon scattering, in which the relaxation time $τ$ of carriers can be expressed as $τ\propto\text{DOS}^{-1}$ for the type-II NLS. Furthermore, we optimize parameters for the TE power factor of type-II NLSs in general by adopting the two-band model with the DOS-dependent relaxation time approximation. Our results suggest the type-II NLSs as a potential class of high-performance TE materials among metals and semimetals, which are traditionally considered not good TE materials compared to semiconductors.

cond-mat.mtrl-sci↗