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Jyotirmay Maity

Publications and source records attributed to Jyotirmay Maity.

8 recordsLinked to original sources

When electrons meet ferroelastic domain walls in Strontium Titanate

Strontium titanate (SrTiO$_3$), famously described by Nobel laureate K. A. Müller as the "drosophila of solid-state physics", has been extensively investigated over the last seventy five years for its intricate coupling of structural, electronic, and dielectric properties and continues to serve as a foundational platform for advancing oxide electronics. In its pristine form, SrTiO$_3$ exhibits quantum paraelectric behavior below 35 K and undergoes an antiferrodistortive phase transition near 105 K. This transition generates ferroelastic twin domains separated by a dense network of domain walls, which function as nanoscale structural defects with far-reaching consequences. While the static influence of ferroelastic domain walls on carrier transport in electron-doped SrTiO$_3$ is well established, recent experimental results show that the emergence of polarity at these walls, combined with strain fields and inherent quantum fluctuations, induces correlated dynamical phenomena such as glass-like relaxations of electrons and memory effects. In this review, we highlight these recent advances, focusing on the subtle interplay between the emergence of nanoscale polar order, quantum fluctuations, and long-range strain fields. We propose that understanding charge carrier dynamics in the background of these complex ferroelastic domain wall landscapes offers a new paradigm for exploring electronic transport in the presence of local polar order and quantum fluctuations, with broad implications for correlated oxides.

cond-mat.str-el

Janus-faced influence of oxygen vacancy in high entropy oxide films with Mott electrons

Contrary to traditional approaches, high entropy oxides (HEOs) strategically employ cationic disorder to engineer tunable functionalities. This disorder, stemming from multiple elements at the same crystallographic site, disrupts local symmetry and induces local distortions. By examining a series of single-crystalline [La$_{0.2}$Pr$_{0.2}$Nd$_{0.2}$Sm$_{0.2}$Eu$_{0.2}$]NiO$_{3-δ}$ thin films, we demonstrate herein that the creation of oxygen vacancies (OVs) further offers a powerful means of tailoring electronic behavior of HEOs by concurrently introducing disorder in the oxygen sublattice and doping electrons into the system. Increasing OV concentration leads to a monotonic increase in room-temperature sheet resistance. A striking feature is the Janus-faced response of the metal-insulator transition (MIT) to OVs due to the interplay among correlation energy scales, electron doping, and disorder. Unlike the monotonous influence of OV observed for the MIT in VO$_2$ and V$_2$O$_3$, initial OV doping lowers the MIT temperature here, whereas higher OV levels completely suppress the metallic phase. Magnetotransport measurements further reveal weak localization, strong localization as a function of $δ$. Moreover, the disorder on both $RE$ and oxygen sublattices is responsible for the Mott-Anderson insulator state. These findings surpass the scope of the recently featured `electron antidoping' effect and demonstrate the promising opportunity to utilize OV engineering of HEOs for Mottronics and optoelectronics applications.

cond-mat.str-el

Interfacial reconstruction effects in insulating double perovskite Nd$_2$NiMnO$_6$/SrTiO$_3$ and Nd$_2$NiMnO$_6$/NdGaO$_3$ thin films

Ferromagnetic insulating (FMI) double perovskite oxides (DPOs) $A_2BB'$O$_6$ with near-room-temperature Curie temperatures are promising candidates for ambient-temperature spintronics applications. To realize their potential, epitaxial stabilization of DPO films and understanding the effect of multiple broken symmetries across the film/substrate interface are crucial. This study investigates ultrathin films of the FMI Nd$_2$NiMnO$_6$ (NNMO) grown on SrTiO$_3$ (STO) and NdGaO$_3$ (NGO) substrates. By comparing growth on these substrates, we examine the influence of polarity and structural symmetry mismatches, which are absent in the NGO system. The interface exhibits immeasurable resistance in both cases. Using synchrotron X-ray diffraction, we show that films have three octahedral rotational domains because of the structural symmetry mismatch with the STO substrate. Furthermore, our coherent Bragg rod analysis of specular X-ray diffraction reveals a significant modification of the out-of-plane lattice parameter within a few unit cells at the film/substrate interface and the surface. This arises from polarity compensation and surface symmetry breaking, respectively. These structural alterations influence the Mn orbital symmetry, a dependence that we further confirm through X-ray linear dichroism measurements. Since the ferromagnetism in insulating DPOs is mediated by orbital-dependent superexchange interactions [Phys. Rev. Lett. 100, 186402 (2008)], our study provides a framework for understanding the evolution of magnetism in ultrathin geometry.

cond-mat.mtrl-sci

Site-selective polar compensation of Mott electrons in a double perovskite heterointerface

Double perovskite oxides (DPOs) with two transition metal ions ($A_2$$BB^\prime$O$_6$) offer a fascinating platform for exploring exotic physics and practical applications. Studying these DPOs as ultrathin epitaxial thin films on single crystalline substrates can add another dimension to engineering electronic, magnetic, and topological phenomena. Understanding the consequence of polarity mismatch between the substrate and the DPO would be the first step towards this broad goal. We investigate this by studying the interface between a prototypical insulating DPO Nd$_2$NiMnO$_6$ and a wide-band gap insulator SrTiO$_3$. The interface is found to be insulating in nature. By combining several experimental techniques and density functional theory, we establish a site-selective charge compensation process that occurs explicitly at the Mn site of the film, leaving the Ni sites inert. We further demonstrate that such surprising selectivity, which cannot be explained by existing mechanisms of polarity compensation, is directly associated with their electronic correlation energy scales. This study establishes the crucial role of Mott physics in polar compensation process and paves the way for designer doping strategies in complex oxides.

cond-mat.mtrl-sci

Beyond being free: glassy dynamics of SrTiO$_3$-based two-dimensional electron gas

Electron glasses offer a convenient laboratory platform to study glassy dynamics. Traditionally, the interplay between long-range Coulomb interactions and disorder is deemed instrumental in stabilizing the electron glass phase. Existing experimental studies on electron glass have focused on doped semiconductors, strongly correlated systems, granular systems, etc., all of which are far from the well-delocalized limit. In this work, we expand the study of electron glasses to a well-known quantum paraelectric SrTiO$_3$ (STO) and unveil a new scenario: how naturally occurring ferroelastic twin walls of STO could result in glassy electrons, even in a metallic state. We show that the emergent two-dimensional electron gas at the $γ$-Al$_2$O$_3$/STO interface exhibits long-lasting temporal relaxations in resistance and memory effects at low temperatures, which are hallmarks of glassiness. We also demonstrate that the glass-like relaxations could be further tuned by application of an electric field. This implies that the observed glassy dynamics is connected with the development of polarity near the structural twin walls of STO and the complex interactions among them, arising from the coupling between ferroelastic and ferroelectric orders. The observation of this glassy metal phase not only extends the concept of electron glasses to metallic systems with multiple order parameters but also contributes to the growing understanding of the fascinating and diverse physical phenomena that emerge near the quantum critical point.

cond-mat.str-el

Quantum fluctuations lead to glassy electron dynamics in the good metal regime of electron doped KTaO3

One of the central challenges in condensed matter physics is to comprehend systems that have strong disorder and strong interactions. In the strongly localized regime, their subtle competition leads to glassy electron dynamics which ceases to exist well before the insulator-to-metal transition is approached as a function of doping. Here, we report on the discovery of glassy electron dynamics deep inside the good metal regime of an electron-doped quantum paraelectric system: KTaO$_3$. We reveal that upon excitation of electrons from defect states to the conduction band, the excess injected carriers in the conduction band relax in a stretched exponential manner with a large relaxation time, and the system evinces simple aging phenomena - a telltale sign of glassy dynamics. Most significantly, we observe a critical slowing down of carrier dynamics below 35 K, concomitant with the onset of quantum paraelectricity in the undoped KTaO$_3$. Our combined investigation using second harmonic generation technique, density functional theory and phenomenological modeling demonstrates quantum fluctuation-stabilized soft polar modes as the impetus for the glassy behavior. This study addresses one of the most fundamental questions regarding the potential promotion of glassiness by quantum fluctuations and opens a route for exploring glassy dynamics of electrons in a well-delocalized regime.

cond-mat.str-el

Orthorhombic distortion drives orbital ordering in an antiferromagnetic 3$d^1$ Mott insulator

The orbital, which represents the shape of the electron cloud, very often strongly influences the manifestation of various exotic phenomena, e.g., magnetism, metal-insulator transition, colossal magnetoresistance, unconventional superconductivity etc. in solid-state systems. The observation of the antiferromagnetism in $RE$TiO$_3$ ($RE$=rare earth) series has been puzzling since the celebrated Kugel-Khomskii model of spin-orbital super exchange predicts ferromagnetism in an orbitally degenerate $d^1$ systems. Further, the existence of the orbitally ordered vs. orbital liquid phase in both antiferromagnetic and paramagnetic phase have been unsettled issues thus far. To address these long-standing questions, we investigate single crystalline film of PrTiO$_3$. Our synchrotron X-ray diffraction measurements confirm the retention of bulk-like orthorhombic ($D_{2h}$) symmetry in the thin film geometry. We observe similar X-ray linear dichroism signal in both paramagnetic and antiferromagnetic phase, which can be accounted by ferro orbital ordering (FOO). While the presence of $D_{2h}$ crystal field does not guarantee lifting of orbital degeneracy always, we find it to be strong enough in these rare-earth titanates, leading to the FOO state. Thus, our work demonstrates the orthorhombic distortion is the driving force for the orbital ordering of antiferromagnetic $RE$TiO$_3$.

cond-mat.str-el

Flux-flow instability across Berezinskii Kosterlitz Thouless phase transition in KTaO$_3$ (111) based superconductor

The nature of energy dissipation in 2D superconductors under perpendicular magnetic field at small current excitations has been extensively studied over the past two decades. However, dissipation mechanisms at high current drives remain largely unexplored. Here we report on the distinct behavior of energy dissipation in the AlOx/KTaO$_3$ (111) system hosting 2D superconductivity in the intermediate disorder regime. The results show that below the Berezinskii Kosterlitz Thouless (BKT) phase transition temperature ($T_\mathrm{BKT}$), hot-spots and Larkin Ovchinnikov type flux-flow instability (FFI) are the major channels of dissipation, leading to pronounced voltage instability at large currents. Furthermore, such FFI leads to a rare observation of clockwise hysteresis in current-voltage characteristics within the temperature range $T_\mathrm{BKT} < T < T_\mathrm{C}$ ($T_\mathrm{C}$ is superconducting transition temperature). These findings deepen our understanding of how a BKT system ultimately transforms to a normal state under increasing current.

cond-mat.supr-con