arXiv subjects

K. -M. Tam

Publications and source records attributed to K. -M. Tam.

12 recordsLinked to original sources

arXiv2021

Dynamical mean-field theory of the Anderson-Hubbard model with local and non-local disorder in tensor formulation

To explore correlated electrons in the presence of local and non-local disorder, the Blackman-Esterling-Berk method for averaging over off-diagonal disorder is implemented into dynamical mean-field theory using tensor notation. The impurity model combining disorder and correlations is solved using the recently developed fork tensor-product state solver, which allows one to calculate the single particle spectral functions on the real-frequency axis. In the absence of off-diagonal hopping, we establish exact bounds of the spectral function of the non-interacting Bethe lattice with coordination number $Z$. In the presence of interaction, the Mott insulating paramagnetic phase of the one-band Hubbard model is computed at zero temperature in alloys with site- and off-diagonal disorder. When the Hubbard $U$ parameter is increased, transitions from an alloy band-insulator through a correlated metal into a Mott insulating phase are found to take place.

cond-mat.str-el↗

arXiv2021

Non-local corrections to the typical medium theory of Anderson localization

We use the recently developed finite cluster typical medium approach to study the Anderson localization transition in three dimensions. Applying our method to the box and binary alloy disorder distributions, we find a fast convergence with the cluster size. We demonstrate the importance of the typical medium environment and the non-local spatial correlations for the proper characterization of the localization transition. As the cluster size increases, our typical medium cluster method recovers the correct critical disorder strength for the transition. Our findings highlight the importance of the non-local cluster corrections for capturing the localization behavior of the mobility edge trajectories. Our results demonstrate that the typical medium cluster approach developed here provides a consistent and systematic description of the Anderson localization transition in the framework of the effective medium embedding schemes.

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arXiv2018

On the Nature of Localization in Ti doped Si

Intermediate band semiconductors hold the promise to significantly improve the efficiency of solar cells, but only if the intermediate impurity band is metallic. We apply a recently developed first principles method to investigate the origin of electron localization in Ti doped Si, a promising candidate for intermediate band solar cells. Although Anderson localization is often overlooked in the context of intermediate band solar cells, our results show that in Ti doped Si it plays a more important role in the metal insulator transition than Mott localization. Implications for the theory of intermediate band solar cells are discussed.

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arXiv2018

Local Density of the Bose Glass Phase

We study the Bose-Hubbard model in the presence of on-site disorder in the canonical ensemble and conclude that the local density of the Bose glass phase behaves differently at incommensurate filling than it does at commensurate one. Scaling of the superfluid density at incommensurate filling of $ρ=1.1$ and on-site interaction $U=80t$ predicts a superfluid-Bose glass transition at disorder strength of $Δ_c \approx 30t$. At this filling the local density distribution shows skew behavior with increasing disorder strength. Multifractal analysis also suggests a multifractal behavior resembling that of the Anderson localization. Percolation analysis points to a phase transition of percolating non-integer filled sites around the same value of disorder. Our findings support the scenario of percolating superfluid clusters enhancing Anderson localization near the superfluid-Bose glass transition. On the other hand, the behavior of the commensurate filled system is rather different. Close to the tip of the Mott lobe ($ρ=1, U=22t$) we find a Mott insulator-Bose glass transition at disorder strength of $Δ_c \approx 16t$. An analysis of the local density distribution shows Gaussian like behavior for a wide range of disorders above and below the transition.

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arXiv2017

The Calculation of Two-Particle Quantities in the Typical Medium Dynamical Cluster Approximation

The mean-field theory for disordered electron systems without interaction is widely and successfully used to describe equilibrium properties of materials over the whole range of disorder strengths. However, it fails to take into account the effects of quantum coherence and information of localization. Vertex corrections due to multiple back-scatterings may drive the electrical conductivity to zero and make expansions around the mean field in strong disorder problematic. Here, we present a method for the calculation of two-particle quantities which enable us to characterize the metal-insulator transitions (MIT) in disordered electron systems by using the Typical Medium Dynamical Cluster Approximation (TMDCA). We show how to include vertex corrections and the information about the mobility edge to the typical mean-field theory. We successfully demonstrate the application of the developed method by showing that the conductivity formulated in this way properly characterizes the MIT in disordered systems.

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arXiv2016

Generalized Multiband Typical Medium Dynamical Cluster Approximation: Application to (Ga,Mn)N

We generalize the multiband typical medium dynamical cluster approximation and the formalism introduced by Blackman, Esterling and Berk so that it can deal with localization in multiband disordered systems with both diagonal and off-diagonal disorder with complicated potentials. We also introduce a new ansatz for the angle resolved typical density of states that greatly improves the numerical stability of the method while preserving the independence of scattering events at different frequencies. Starting from the first-principles effective Hamiltonian, we apply this method to the diluted magnetic semiconductor Ga$_{1-x}$Mn$_x$N, and find the impurity band is completely localized for Mn concentrations $x<0.03$ while for $0.03 <x<0.10$ the impurity band has delocalized states but the chemical potential resides at or above the mobility edge. So, the system is always insulating within the experimental compositional limit ($x\approx 0.10$) due to Anderson localization. However, for $0.03 <x<0.10$ hole doping could make the system metallic allowing double exchange mediated, or enhanced, ferromagnetism. The developed method is expected to have a large impact on first-principles studies of Anderson localization.

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arXiv2016

The Bose-Hubbard model on a triangular lattice with diamond ring-exchange

Ring-exchange interactions have been proposed as a possible mechanism for a Bose-liquid phase at zero temperature, a phase that is compressible with no superfluidity. Using the Stochastic Green Function algorithm (SGF), we study the effect of these interactions for bosons on a two-dimensional triangular lattice. We show that the supersolid phase, that is known to exist in the ground state for a wide range of densities, is rapidly destroyed as the ring-exchange interactions are turned on. We establish the ground-state phase diagram of the system, which is characterized by the absence of the expected Bose-liquid phase.

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arXiv2015

Metal-Insulator-Transition in a Weakly interacting Disordered Electron System

The interplay of interactions and disorder is studied using the Anderson-Hubbard model within the typical medium dynamical cluster approximation. Treating the interacting, non-local cluster self-energy ($Σ_c[{\cal \tilde{G}}](i,j\neq i)$) up to second order in the perturbation expansion of interactions, $U^2$, with a systematic incorporation of non-local spatial correlations and diagonal disorder, we explore the initial effects of electron interactions ($U$) in three dimensions. We find that the critical disorder strength ($W_c^U$), required to localize all states, increases with increasing $U$; implying that the metallic phase is stabilized by interactions. Using our results, we predict a soft pseudogap at the intermediate $W$ close to $W_c^U$ and demonstrate that the mobility edge ($ω_ε$) is preserved as long as the chemical potential, $μ$, is at or beyond the mobility edge energy.

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arXiv2015

Finite Cluster Typical Medium Theory for Disordered Electronic Systems

We use the recently developed typical medium dynamical cluster (TMDCA) approach~[Ekuma \etal,~\textit{Phys. Rev. B \textbf{89}, 081107 (2014)}] to perform a detailed study of the Anderson localization transition in three dimensions for the Box, Gaussian, Lorentzian, and Binary disorder distributions, and benchmark them with exact numerical results. Utilizing the nonlocal hybridization function and the momentum resolved typical spectra to characterize the localization transition in three dimensions, we demonstrate the importance of both spatial correlations and a typical environment for the proper characterization of the localization transition in all the disorder distributions studied. As a function of increasing cluster size, the TMDCA systematically recovers the re-entrance behavior of the mobility edge for disorder distributions with finite variance, obtaining the correct critical disorder strengths, and shows that the order parameter critical exponent for the Anderson localization transition is universal. The TMDCA is computationally efficient, requiring only a small cluster to obtain qualitative and quantitative data in good agreement with numerical exact results at a fraction of the computational cost. Our results demonstrate that the TMDCA provides a consistent and systematic description of the Anderson localization transition.

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arXiv2014

Study of off-diagonal disorder using the typical medium dynamical cluster approximation

We generalize the typical medium dynamical cluster approximation (TMDCA) and the local Blackman, Esterling, and Berk (BEB) method for systems with off-diagonal disorder. Using our extended formalism we perform a systematic study of the effects of non-local disorder-induced correlations and of off-diagonal disorder on the density of states and the mobility edge of the Anderson localized states. We apply our method to the three-dimensional Anderson model with configuration dependent hopping and find fast convergence with modest cluster sizes. Our results are in good agreement with the data obtained using exact diagonalization, and the transfer matrix and kernel polynomial methods.

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arXiv2014

A Typical Medium Dynamical Cluster Approximation for the Study of Anderson Localization in Three Dimensions

We develop a systematic typical medium dynamical cluster approximation that provides a proper description of the Anderson localization transition in three dimensions (3D). Our method successfully captures the localization phenomenon both in the low and large disorder regimes, and allows us to study the localization in different momenta cells, which renders the discovery that the Anderson localization transition occurs in a cell-selective fashion. As a function of cluster size, our method systematically recovers the re-entrance behavior of the mobility edge and obtains the correct critical disorder strength for Anderson localization in 3D.

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arXiv2011

Dual Fermion Dynamical Cluster Approach for Strongly Correlated Systems

We have designed a new multi-scale approach for Strongly Correlated Systems by combining the Dynamical Cluster Approximation (DCA) and the recently introduced dual-fermion formalism. This approach employs an exact mapping from a real lattice to a DCA cluster of linear size Lc embedded in a dual fermion lattice. Short-length-scale physics is addressed by the DCA cluster calculation, while longer-length-scale physics is addressed diagrammatically using dual fermions. The bare and dressed dual Fermionic Green functions scale as O(1/Lc) so perturbation theory on the dual lattice converges very quickly. E.g., the dual Fermion self-energy calculated with simple second order perturbation theory is of order O(1/Lc^3), with third order and three body corrections down by an additional factor of O(1/Lc^2).

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