arXiv subjects

K. A. Al-Hassanieh

Publications and source records attributed to K. A. Al-Hassanieh.

21 records · Page 2Linked to original sources

arXiv2005

Transport properties of strongly correlated electrons in quantum dots using a simple circuit model

Numerical calculations are shown to reproduce the main results of recent experiments involving nonlocal spin control in nanostructures (N. J. Craig et al., Science 304, 565 (2004)). In particular, the splitting of the zero-bias-peak discovered experimentally is clearly observed in our studies. To understand these results, a simple "circuit model" is introduced and shown to provide a good qualitative description of the experiments. The main idea is that the splitting originates in a Fano anti-resonance, which is caused by having one quantum dot side-connected in relation to the current's path. This scenario provides an explanation of Craig et al.'s results that is alternative to the RKKY proposal, which is here also addressed.

cond-mat.str-el↗

arXiv2004

Prediction of Ferromagnetic Correlations in Coupled Double-Level Quantum Dots

Numerical results are presented for transport properties of two coupled double-level quantum dots. The results strongly suggest that under appropriate circumstances the dots can develop a novel ferromagnetic (FM) correlation at quarter-filling (one electron per dot). In the strong coupling regime (Coulomb repulsion larger than electron hopping) and with the inter-dot tunneling larger than the tunneling to the leads, an S=1 Kondo resonance develops in the density of states, leading to a peak in the conductance. A qualitative 'phase diagram', incorporating the new FM phase, is presented. It is also shown that the conditions necessary for the FM regime are less restrictive than naively believed, leading to its possible experimental observation in real quantum dots.

cond-mat.mes-hall↗

arXiv2004

Interference Effects in the Conductance of Multi-Level Quantum Dots

Using exact-diagonalization techniques supplemented by a Dyson equation embedding procedure, the transport properties of multilevel quantum dots are investigated in the Kondo regime. The conductance can be decomposed into the contributions of each level. It is shown that these channels can carry a different phase, and destructive interference processes are observed when the phase difference between them is $\pmπ$. This effect is very different from those observed in bulk metals with magnetic impurities, where the phase differences play no significant role. The effect is also different from other recent studies of interference processes in dots, as discussed in the text. In particular, no external magnetic field is here introduced, and the hopping amplitudes dot-leads for all levels are the same. However, conductance cancellations induced by interactions are still observed. Another interesting effect reported here is the formation of localized states that do not participate in the transport. When one of these states crosses the Fermi level, the electronic occupation of the quantum dot changes, modifying the many-body physics of the system and indirectly affecting the transport properties. Novel discontinuities between two finite conductance values can occur as the gate voltage is varied, as discussed here.

cond-mat.mes-hall↗