arXiv subjects

K. Das Gupta

Publications and source records attributed to K. Das Gupta.

At least 19 recordsLinked to original sources

arXiv2024

Gate voltage modulation of the superconducting state in a degenerate semiconductor

In this work, we demonstrate that the modulation of carrier density can alter the superconducting transition temperature by up to $204$ mK in epitaxial Indium Nitride on Gallium Nitride, accounting for the $10$% of the transition temperature in ungated conditions. Our samples are likely free from strong localization effects and significant granularity, as indicated by $( k_{f l} \gg 1 )$, suggesting that the primary determinant of the transition temperature in InN is carrier density, rather than disorder scattering. The observed behavior is consistent with BCS s-wave superconductivity, corroborated by the superconducting parameters we measured. Furthermore, we observed a $60$% bipolar suppression of the supercurrent in our experiments.

cond-mat.mes-hall↗

arXiv2024

Low frequency resistance fluctuations in an ionic liquid gated channel probed by cross-correlation noise spectroscopy

A system in equilibrium keeps ``exploring" nearby states in the phase space and consequently, fluctuations can contain information, that the mean value does not. However, such measurements involve a fairly complex interplay of effects arising in the device and measurement electronics, that are non-trivial to disentangle. In this paper, we briefly analyse some of these issues and show the relevance of a two-amplifier cross-correlation technique for semiconductors and thin films commonly encountered. We show that by using home-built amplifiers costing less than $10$ USD/piece one can measure spectral densities as low as $\sim 10^{-18}-10^{-19}~ {\rm {V^2}{Hz^{-1}}}$. We apply this method to an ionic liquid gated Ga:ZnO channel and show that the glass transition of the ionic liquid brings about a change in the exponent of the low frequency resistance fluctuations. Our analysis suggests that a log-normal distribution of the Debye relaxation times of the fluctuations and an increased weight of the long timescale relaxations can give a semi-quantitative explanation of the observed change in the exponent.

cond-mat.mes-hall↗

arXiv2022

Formation of tungsten carbide by focused ion beam process: A route to high magnetic field resilient patterned superconducting nanostructures

A scale for magnetic field resilience of a superconductor is set by the paramagnetic limit. Comparing the condensation energy of the Bardeen-Cooper-Schrieffer (BCS) singlet ground state with the paramagnetically polarised state suggests that for an applied field ${μ_0}H > 1.8~T_c$ (in SI), singlet pairing is not energetically favourable. Materials exceeding or approaching this limit are interesting from fundamental and technological perspectives. This may be a potential indicator of triplet superconductivity, Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) pairing and other mechanisms involving topological aspects of surface states, and also allow Cooper pair injection at high magnetic fields. We have analysed the microscopic composition of such a material arising from an unexpected source. A microjet of an organo-metallic gas, $\rm {W[(CO)_6]}$ can be decomposed by gallium ion-beam, leaving behind a track of complex residue of gallium, tungsten and carbon with remarkable superconducting properties, like an upper critical field, $H_{c2} > 10~{\rm T} $, above its paramagnetic limit. We carried out Atomic probe tomography to establish the formation of nano-crystalline tungsten carbide (WC) in the tracks and the absence of free tungsten. Supporting calculations show for Ga distributed on the surface of WC, its s,p-orbitals enhance the density of states near the Fermi energy. The observed variation of $H_{c2}(T)$ does not show features typical of enhancement of critical field due to granularity. Our observations may be significant in the context of some recent theoretical calculation of the band structure of WC and experimental observation of superconductivity in WC-metal interface.

cond-mat.supr-con↗

arXiv2021

Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs

Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background impurities. In 2DEGs closer to the surface, unbiased illuminations result in a mobility loss, driven by an increase in surface charge density. Biased illuminations performed with positive applied gate voltages result in a mobility gain, whereas those performed with negative applied voltages result in a mobility loss. The magnitude of the mobility gain (loss) weakens with 2DEG depth, and is likely driven by a reduction (increase) in surface charge density. Remarkably, this mobility gain/loss is fully reversible by performing another biased illumination with the appropriate gate voltage, provided both n-type and p-type ohmic contacts are present. Experimental results are modeled with Boltzmann transport theory, and possible mechanisms are discussed.

cond-mat.mes-hall↗

arXiv2016

Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device

We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. The Coulomb drag resistivity is a direct measure of the strength of the interlayer particle-particle interactions. We explore the strongly interacting regime of low carrier densities (2D interaction parameter $r_s$ up to 14). Our ambipolar device design allows comparison between the effects of the attractive electron-hole and repulsive hole-hole interactions, and also shows the effects of the different effective masses of electrons and holes in GaAs.

cond-mat.mes-hall↗

arXiv2014

Effect of parameter mismatch on the synchronization of strongly coupled self sustained oscillators

In this paper we present an experimental setup and an associated mathematical model to study the synchronization of two self sustained strongly coupled mechanical oscillators (metronomes). The effects of a small detuning in the internal parameters, namely damping and frequency, have been studied. Our experimental system is a pair of spring wound mechanical metronomes, coupled by placing them on a common base, free to move along a horizontal direction. In our system the mass of the oscillating pendula form a significant fraction of the total mass of the system, leading to strong coupling of the oscillators. We modified the internal mechanism of the spring-wound "clockwork" slightly, such that the natural frequency and the internal damping could be independently tuned. Stable synchronized and anti-synchronized states were observed as the difference in the parameters was varied. We designed a photodiode array based non-contact, non-magnetic position detection system driven by a microcontroller to record the instantaneous angular displacement of each oscillator and the small linear displacement of the base coupling the two. Our results indicate that such a system can be made to stabilize in both in-phase anti-phase synchronized state by tuning the parameter mismatch. Results from both numerical simulations and experimental observations are in qualitative agreement and are both reported in the present work.

nlin.CD↗

arXiv2013

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas

We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2E11 /cm^2) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV).

cond-mat.mes-hall↗

arXiv2012

Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons ($μ_\textrm{peak}=4\times10^6\textrm{cm}^2/\textrm{Vs}$) and holes ($μ_\textrm{peak}=0.8\times10^6\textrm{cm}^2/\textrm{Vs}$) in the same conduction channel with nominally identical disorder potentials. We find significant discrepancies between electron and hole scattering, with the hole mobility being considerably lower than expected from simple theory.

cond-mat.mes-hall↗

arXiv2011

Linear non-hysteretic gating of a very high density 2DEG in an undoped metal-semiconductor-metal sandwich structure

Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high densities. A loss of linear gateability is often associated with the highest mobilites, on account of a some residual hopping or parallel conduction in the doped regions. We have developed a method of using fully undoped GaAs-AlGaAs quantum wells, where densities $\approx{6\times10^{11}\rm{cm}^{-2}}$ can be achieved while maintaining fully linear and non-hysteretic gateability. We use these devices to understand the possible mobility limiting mechanisms at very high densities.

cond-mat.mes-hall↗

arXiv2010

Distinguishing impurity concentrations in GaAs and AlGaAs, using very shallow undoped heterostructures

We demonstrate a method of making a very shallow, gateable, undoped 2-dimensional electron gas. We have developed a method of making very low resistivity contacts to these structures and systematically studied the evolution of the mobility as a function of the depth of the 2DEG (from 300nm to 30nm). We demonstrate a way of extracting quantitative information about the background impurity concentration in GaAs and AlGaAs, the interface roughness and the charge in the surface states from the data. This information is very useful from the perspective of molecular beam epitaxy (MBE) growth. It is difficult to fabricate such shallow high-mobility 2DEGs using modulation doping due to the need to have a large enough spacer layer to reduce scattering and switching noise from remote ionsied dopants.

cond-mat.mes-hall↗

arXiv2009

Possible effect of collective modes in zero magnetic field transport in an electron-hole bilayer

We report single layer resistivities of 2-dimensional electron and hole gases in an electron-hole bilayer with a 10nm barrier. In a regime where the interlayer interaction is stronger than the intralayer interaction, we find that an insulating state ($dρ/dT < 0$) emerges at $T\sim1.5{\rm K}$ or lower, when both the layers are simultaneously present. This happens deep in the $"$metallic" regime, even in layers with $k_{F}l>500$, thus making conventional mechanisms of localisation due to disorder improbable. We suggest that this insulating state may be due to a charge density wave phase, as has been expected in electron-hole bilayers from the Singwi-Tosi-Land-Sjölander approximation based calculations of L. Liu {\it et al} [{\em Phys. Rev. B}, {\bf 53}, 7923 (1996)]. Our results are also in qualitative agreement with recent Path-Integral-Monte-Carlo simulations of a two component plasma in the low temperature regime [ P. Ludwig {\it et al}. {\em Contrib. Plasma Physics} {\bf 47}, No. 4-5, 335 (2007)]

cond-mat.str-el↗

arXiv2009

Anomalous Coulomb drag in electron-hole bilayers

We report Coulomb drag measurements on GaAs-AlGaAs electron-hole bilayers. The two layers are separated by a 10 or 25nm barrier. Below T$\approx$1K we find two features that a Fermi-liquid picture cannot explain. First, the drag on the hole layer shows an upturn, which may be followed by a downturn. Second, the effect is either absent or much weaker in the electron layer, even though the measurements are within the linear response regime. Correlated phases have been anticipated in these, but surprisingly, the experimental results appear to contradict Onsager's reciprocity theorem.

cond-mat.mes-hall↗

arXiv2008

On the Zero-Bias Anomaly in Quantum Wires

Undoped GaAs/AlGaAs heterostructures have been used to fabricate quantum wires in which the average impurity separation is greater than the device size. We compare the behavior of the Zero-Bias Anomaly against predictions from Kondo and spin polarization models. Both theories display shortcomings, the most dramatic of which are the linear electron-density dependence of the Zero-Bias Anomaly spin-splitting at fixed magnetic field B and the suppression of the Zeeman effect at pinch-off.

cond-mat.mes-hall↗

arXiv2008

Low Temperature Transport in Undoped Mesoscopic Structures

Using high quality undoped GaAs/AlGaAs heterostructures with optically patterned insulation between two layers of gates, it is possible to investigate very low density mesoscopic regions where the number of impurities is well quantified. Signature appearances of the scattering length scale arise in confined two dimensional regions, where the zero-bias anomaly (ZBA) is also observed. These results explicitly outline the molecular beam epitaxy growth parameters necessary to obtain ultra low density large two dimensional regions as well as clean reproducible mesoscopic devices.

cond-mat.mes-hall↗

arXiv2008

Fabrication of closely spaced, independently contacted Electron-Hole bilayers in GaAs-AlGaAs heterostructures

We describe a technique to fabricate closely spaced electron-hole bilayers in GaAs-AlGaAs heterostructures. Our technique incorporates a novel method for making shallow contacts to a low density ($<10^{11}cm^{-2}$) 2-dimensional electron gas (2DEG) that do not require annealing. Four terminal measurements on both layers (25nm apart) are possible. Measurements show a hole mobility $μ_{h}>10^{5}{\rm cm}^{2}{\rm V}^{-1}{\rm s}^{-1}$ and an electron mobility $μ_{e}>10^{6}{\rm cm}^{2}{\rm V}^{-1}{\rm s}^{-1}$ at 1.5K. Preliminary drag measurements made down to T=300mK indicate an enhancement of coulomb interaction over the values obtained from a static Random Phase Approximation (RPA) calculation.

cond-mat.mes-hall↗

arXiv2008

Patterned backgating using single-sided mask aligners: application to density-matched electron-hole bilayers

We report our work on fabricating lithographically aligned patterned backgates on thin (50-60$μ$m) \Roman{roman3}-\Roman{roman5} semiconductor samples using {\it single sided mask aligners only}. Along with this we also present a way to photograph both sides of a thin patterned chip using inexpensive infra-red light emitting diodes (LED) and an inexpensive (consumer) digital camera. A robust method of contacting both sides of a sample using an ultrasonic bonder is described. In addition we present a mathematical model to analyse the variation of the electrochemical potential through the doped layers and heterojunctions that are normally present in most GaAs based devices. We utilise the technique and the estimates from our model to fabricate an electron-hole bilayer device in which each layer is separately contacted and has tunable densities. The electron and hole layers are separated by barriers either 25 or 15nm wide. In both cases, the densities can be matched by using appropriate bias voltages.

cond-mat.mes-hall↗

arXiv2002

Insulator superconductor transition on solid inert gas substrates

We present observations of the insulator-superconductor transition in ultrathin films of Bi on solid xenon condensed on quartz and on Ge on quartz. The relative permeability $ε_{r}$ ranges from 1.5 for Xe to 15 for Ge. Though we find screening effects as expected, the I-S transition is robust, and unmodified by the substrate. The resistance separatrix is found to be close to $h/4e^2$ and the crossover thickness close to 25 $Å$ for all substrates. I-V studies and Aslamazov-Larkin analyses indicate superconductivity is inhomogeneous. The transition is best described in terms of a percolation model.

cond-mat.supr-con↗

arXiv2002

Vortices and the mixed state of ultrathin Bi films

Current-voltage (I-V) characteristics of quench condensed, superconducting, ultrathin Bi films in a magnetic field are reported. These show hysteresis for all films, grown both with and without thin Ge underlayers. Films on Ge underlayers, close to superconductor-insulator transition, show a peak in the critical current, indicating a structural transformation of the vortex solid. These underlayers, used to make the films more homogeneous, are found to be more effective in pinning the vortices. The upper critical fields ($B_{c2}$) of these films are determined from the resistive transitions in perpendicular magnetic field. The temperature dependence of the upper critical field is found to differ significantly from Ginzburg-Landau theory, after modifications for disorder.

cond-mat.supr-con↗