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K. E. Nagaev

Publications and source records attributed to K. E. Nagaev.

42 records · Page 3Linked to original sources
arXiv2000

Long-Range Coulomb Interaction and the Crossover between Quantum and Shot Noise in Diffusive Conductors

Frequency-dependent nonequilibrium noise in quantum-coherent diffusive conductors is calculated with account taken of long-range Coulomb interaction. For long and narrow contacts with strong external screening the crossover between quantum and shot noise takes place at frequencies much smaller than the voltage drop across the contact. We also show that under certain frequency limitations, the semiclassical and quantum-coherent approaches to shot noise are mathematically equivalent.

cond-mat.mes-hall↗
arXiv1998

Frequency-Dependent Shot Noise as a Probe of Electron-Electron Interaction in Mesoscopic Diffusive Contacts

The frequency-dependent shot noise in long and narrow mesoscopic diffusive contacts is numerically calculated. The case of arbitrarily strong electron-electron scattering and zero temperature of electrodes is considered. For all voltages, the noise increases with frequency and tends to finite values. These limiting values are larger than the Poissonian noise and increase nearly as voltage to power 4/3. This allows one to experimentally determine the parameters of electron-electron interaction.

cond-mat.mes-hall↗
arXiv1998

On Properties of Boundaries and Electron Conductivity in Mesoscopic Polycrystalline Silicon Films for Memory Devices

We present the results of molecular dynamics modeling on the structural properties of grain boundaries (GB) in thin polycrystalline films. The transition from crystalline boundaries with low mismatch angle to amorphous boundaries is investigated. It is shown that the structures of the GBs satisfy a thermodynamical criterion. The potential energy of silicon atoms is closely related with a geometrical quantity -- tetragonality of their coordination with their nearest neighbors. A crossover of the length of localization is observed. To analyze the crossover of the length of localization of the single-electron states and properties of conductance of the thin polycrystalline film at low temperature, we use a two-dimensional Anderson localization model, with the random one-site electron charging energy for a single grain (dot), random non-diagonal matrix elements, and random number of connections between the neighboring grains. The results on the crossover behavior of localization length of the single-electron states and characteristic properties of conductance are presented in the region of parameters where the transition from an insulator to a conductor regimes takes place.

cond-mat.dis-nn↗
arXiv1997

Fluctuation Conductivity in Mesoscopic Superconductor - Normal Metal Contacts

The fluctuation conduction of NSN and SNS contacts above T_c are analyzed. For NSN contacts, both Aslamazov-Larkin and Maki- Thompson corrections to the conduction are found to be of the same order and diverge for T_c^* < T_c according to the law (T - T_c^*)^-1. For SNS contacts, the Aslamazov - Larkin correction vanishes,while the Maki - Thompson correction is essential for contacts shorter than the phase-breaking length.

cond-mat.supr-con↗
arXiv1997

Long-Range Coulomb Interaction and Frequency Dependence of Shot Noise in Mesoscopic Diffusive Contacts

The frequency dependence of shot noise in mesoscopic diffusive contacts is calculated with account taken of long-range Coulomb interaction and external screening. While the low-frequency noise is 1/3 of noise of classical Poisson process independently of the contact shape, the high-frequency noise tends to the full classical value for long and narrow contacts because of strong screening by the surrounding medium. In this case, the current fluctuations at opposite ends of the contact are completely independent.

cond-mat.mes-hall↗