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K. Ensslin

Publications and source records attributed to K. Ensslin.

At least 19 recordsLinked to original sources

Spin-orbit proximity in MoS$_2$/bilayer graphene heterostructures

Van der Waals heterostructures provide a versatile platform for tailoring electronic properties through the integration of two-dimensional materials. Among these combinations, the interaction between bilayer graphene and transition metal dichalcogenides (TMDs) stands out due to its potential for inducing spin-orbit coupling (SOC) in graphene. Future devices concepts require the understanding the precise nature of SOC in TMD/bilayer graphene heterostructures and its influence on electronic transport phenomena. Here, we experimentally confirm the presence of two distinct types of SOC, Ising (1.55 meV) and Rashba (2.5 meV), in bilayer graphene when interfaced with molybdenum disulphide, recognized as one of the most stable TMDs. Furthermore, we reveal a non-monotonic trend in conductivity with respect to the electric displacement field at charge neutrality. This phenomenon is ascribed to the existence of single-particle gaps induced by the Ising SOC, which can be closed by a critical displacement field. Remarkably, our findings also unveil sharp peaks in the magnetoconductivity around the critical displacement field, challenging existing theoretical models.

cond-mat.mes-hall

Imaging of sub-$\mu$A currents in bilayer graphene using a scanning diamond magnetometer

Nanoscale electronic transport gives rise to a number of intriguing physical phenomena that are accompanied by distinct spatial patterns of current flow. Here, we report on sensitive magnetic imaging of two-dimensional current distributions in bilayer graphene at room temperature. By combining dynamical modulation of the source-drain current with ac quantum sensing of a nitrogen-vacancy center in a diamond probe, we acquire magnetic field and current density maps with excellent sensitivities of 4.6 nT and 20 nA/$\mu$m, respectively. The spatial resolution is 50-100 nm. We further introduce a set of methods for increasing the technique's dynamic range and for mitigating undesired back-action of magnetometry operation on the electronic transport. Current density maps reveal local variations in the flow pattern and global tuning of current flow via the back-gate potential. No signatures of hydrodynamic transport are observed. Our experiments demonstrate the feasibility for imaging subtle features of nanoscale transport in two-dimensional materials and conductors.

cond-mat.mes-hall

Excitation spectra of two correlated electrons in a quantum dot

Measurements and a theoretical interpretation of the excitation spectrum of a two-electron quantum dot fabricated on a parabolic Ga[Al]As quantum well are reported. Experimentally, excited states are found beyond the well-known lowest singlet- and triplet states. These states can be reproduced in an exact diagonalization calculation of a parabolic dot with moderate in-plane anisotropy. The calculated spectra are in reasonable quantitative agreement with the measurement, and suggest that correlations between the electrons play a significant role in this system. Comparison of the exact results with the restricted Hartree-Fock and the generalized Heitler-London approach shows that the latter is more appropriate for this system because it can account for the spatial correlation of the electron states.

cond-mat.mes-hall

Spin-Selective Equilibration among Integer Quantum Hall Edge Channels

The equilibration between quantum Hall edge modes is known to depend on the disorder potential and the steepness of the edge. Modern samples with higher mobilities and setups with lower electron temperatures call for a further exploration of the topic. We develop a framework to systematically measure and analyze the equilibration of many (up to 8) integer edge modes. Our results show that spin-selective coupling dominates even for non-neighboring channels with parallel spin. Changes in magnetic field and bulk density let us control the equilibration until it is almost completely suppressed and dominated only by individual microscopic scatterers. This method could serve as a guideline to investigate and design improved devices, and to study fractional and other exotic states.

cond-mat.mes-hall

Electron transport in dual-gated three-layer MoS$_2$

The low-energy band structure of few-layer MoS$_2$ is relevant for a large variety of experiments ranging from optics to electronic transport. Its characterization remains challenging due to complex multi band behavior. We investigate the conduction band of dual-gated three-layer MoS$_2$ by means of magnetotransport experiments. The total carrier density is tuned by voltages applied between MoS$_2$ and both top and bottom gate electrodes. For asymmetrically biased top and bottom gates, electrons accumulate in the layer closest to the positively biased electrode. In this way, the three-layer MoS$_2$ can be tuned to behave electronically like a monolayer. In contrast, applying a positive voltage on both gates leads to the occupation of all three layers. Our analysis of the Shubnikov--de Haas oscillations originating from different bands lets us attribute the corresponding carrier densities in the top and bottom layers. We find a twofold Landau level degeneracy for each band, suggesting that the minima of the conduction band lie at the $\pm K$ points of the first Brillouin zone. This is in contrast to band structure calculations for zero layer asymmetry, which report minima at the $Q$ points. Even though the interlayer tunnel coupling seems to leave the low-energy conduction band unaffected, we observe scattering of electrons between the outermost layers for zero layer asymmetry. The middle layer remains decoupled due to the spin-valley symmetry, which is inverted for neighboring layers. When the bands of the outermost layers are energetically in resonance, interlayer scattering takes place, leading to an enhanced resistance and to magneto-interband oscillations.

cond-mat.mes-hall

In-situ Tuning of the Electric Dipole Strength of a Double Dot Charge Qubit: Charge Noise Protection and Ultra Strong Coupling

Semiconductor quantum dots, where electrons or holes are isolated via electrostatic potentials generated by surface gates, are promising building blocks for semiconductor-based quantum technology. Here, we investigate double quantum dot (DQD) charge qubits in GaAs, capacitively coupled to high-impedance SQUID array and Josephson junction array resonators. We tune the strength of the electric dipole interaction between the qubit and the resonator in-situ using surface gates. We characterize the qubit-resonator coupling strength, qubit decoherence, and detuning noise affecting the charge qubit for different electrostatic DQD configurations. We find that all quantities can be tuned systematically over more than one order of magnitude, resulting in reproducible decoherence rates $\Gamma_2/2\pi<~5$ MHz in the limit of high interdot capacitance. Conversely, by reducing the interdot capacitance, we can increase the DQD electric dipole strength, and therefore its coupling to the resonator. By employing a Josephson junction array resonator with an impedance of $\sim4$ k$\Omega$ and a resonance frequency of $\omega_r/2\pi \sim 5.6$ GHz, we observe a coupling strength of $g/2\pi \sim 630$ MHz, demonstrating the possibility to achieve the ultrastrong coupling regime (USC) for electrons hosted in a semiconductor DQD. These results are essential for further increasing the coherence of quantum dot based qubits and investigating USC physics in semiconducting QDs.

cond-mat.mes-hall

Charge detection in gate-defined bilayer graphene quantum dots

We report on charge detection in electrostatically-defined quantum dot devices in bilayer graphene using an integrated charge detector. The device is fabricated without any etching and features a graphite back gate, leading to high quality quantum dots. The charge detector is based on a second quantum dot separated from the first dot by depletion underneath a 150 nm wide gate. We show that Coulomb resonances in the sensing dot are sensitive to individual charging events on the nearby quantum dot. The potential change due to single electron charging causes a step-like change (up to 77 %) in the current through the charge detector. Furthermore, the charging states of a quantum dot with tunable tunneling barriers and of coupled quantum dots can be detected.

cond-mat.mes-hall

Excited states in bilayer graphene quantum dots

We report on ground- and excited state transport through an electrostatically defined few-hole quantum dot in bilayer graphene in both parallel and perpendicular applied magnetic fields. A remarkably clear level scheme for the two-particle spectra is found by analyzing finite bias spectroscopy data within a two-particle model including spin and valley degrees of freedom. We identify the two-hole ground-state to be a spin-triplet and valley-singlet state. This spin alignment can be seen as Hund's rule for a valley-degenerate system, which is fundamentally different to quantum dots in carbon nano tubes and GaAs-based quantum dots. The spin-singlet excited states are found to be valley-triplet states by tilting the magnetic field with respect to the sample plane. We quantify the exchange energy to be 0.35meV and measure a valley and spin g-factor of 36 and 2, respectively.

cond-mat.mes-hall

Coherent long-distance spin-qubit-transmon coupling

Spin qubits and superconducting qubits are among the promising candidates for a solid state quantum computer. For the implementation of a hybrid architecture which can profit from the advantages of either world, a coherent long-distance link is necessary that integrates and couples both qubit types on the same chip. We realize such a link with a frequency-tunable high impedance SQUID array resonator. The spin qubit is a resonant exchange qubit hosted in a GaAs triple quantum dot. It can be operated at zero magnetic field, allowing it to coexist with superconducting qubits on the same chip. We find a working point for the spin qubit, where the ratio between its coupling strength and decoherence rate is optimized. We observe coherent interaction between the resonant exchange qubit and a transmon qubit in both resonant and dispersive regimes, where the interaction is mediated either by real or virtual resonator photons.

cond-mat.mes-hall

Auger-spectroscopy in quantum Hall edge channels: a possible resolution to the missing energy problem

Quantum Hall edge channels offer an efficient and controllable platform to study quantum transport in one dimension. Such channels are a prospective tool for the efficient transfer of quantum information at the nanoscale, and play a vital role in exposing intriguing physics. Electric current along the edge carries energy and heat leading to inelastic scattering, which may impede coherent transport. Several experiments attempting to probe the concomitant energy redistribution along the edge reported energy loss via unknown mechanisms of inelastic scattering. Here we employ quantum dots to inject and extract electrons at specific energies, to spectrally analyse inelastic scattering inside quantum Hall edge channels. We show that the "missing energy" puzzle can be untangled by incorporating non-local Auger-like processes, in which energy is redistributed between spatially separate parts of the sample. Our theoretical analysis, accounting for the experimental results, challenges common-wisdom analyses which ignore such non-local decay channels.

cond-mat.mes-hall

Microwave cavity detected spin blockade in a few electron double quantum dot

We investigate spin states of few electrons in a double quantum dot by coupling them weakly to a magnetic field resilient NbTiN microwave resonator. We observe a reduced resonator transmission if resonator photons and spin singlet states interact. This response vanishes in a magnetic field once the quantum dot ground state changes from a spin singlet into a spin triplet state. Based on this observation, we map the two-electron singlet-triplet crossover by resonant spectroscopy. By measuring the resonator only, we observe Pauli spin blockade known from transport experiments at finite source-drain bias and detect an unconventional spin blockade triggered by the absorption of resonator photons.

cond-mat.mes-hall

Stable Branched Electron Flow

The pattern of branched electron flow revealed by scanning gate microscopy shows the distribution of ballistic electron trajectories. The details of the pattern are determined by the correlated potential of remote dopants with an amplitude far below the Fermi energy. We find that the pattern persists even if the electron density is significantly reduced such that the change in Fermi energy exceeds the background potential amplitude. The branch pattern is robust against changes in charge carrier density, but not against changes in the background potential caused by additional illumination of the sample.

cond-mat.mes-hall

Coherent microwave photon mediated coupling between a semiconductor and a superconductor qubit

Semiconductor qubits rely on the control of charge and spin degrees of freedom of electrons or holes confined in quantum dots (QDs). They constitute a promising approach to quantum information processing [1, 2], complementary to superconducting qubits [3]. Typically, semiconductor qubit-qubit coupling is short range [1, 2, 4, 5], effectively limiting qubit distance to the spatial extent of the wavefunction of the confined particle, which represents a significant constraint towards scaling to reach dense 1D or 2D arrays of QD qubits. Following the success of circuit quantum eletrodynamics [6], the strong coupling regime between the charge [7, 8] and spin [9, 10, 11] degrees of freedom of electrons confined in semiconducting QDs interacting with individual photons stored in a microwave resonator has recently been achieved. In this letter, we demonstrate coherent coupling between a superconducting transmon qubit and a semiconductor double quantum dot (DQD) charge qubit mediated by virtual microwave photon excitations in a tunable high-impedance SQUID array resonator acting as a quantum bus [12, 13, 14]. The transmon-charge qubit coherent coupling rate ($ \sim$ 21 MHz) exceeds the linewidth of both the transmon ($ \sim$ 0.8 MHz) and the DQD charge ($ \sim$ 3 MHz) qubit. By tuning the qubits into resonance for a controlled amount of time, we observe coherent oscillations between the constituents of this hybrid quantum system. These results enable a new class of experiments exploring the use of the two-qubit interactions mediated by microwave photons to create entangled states between semiconductor and superconducting qubits. The methods and techniques presented here are transferable to QD devices based on other material systems and can be beneficial for spin-based hybrid systems.

quant-ph

Floquet spectroscopy of a strongly driven quantum dot charge qubit with a microwave resonator

We experimentally investigate a strongly driven GaAs double quantum dot charge qubit weakly coupled to a superconducting microwave resonator. The Floquet states emerging from strong driving are probed by tracing the qubit - resonator resonance condition. This way we probe the resonance of a qubit that is driven in an adiabatic, a non-adiabatic, or an intermediate rate showing distinct quantum features of multi-photon processes and Landau-Zener-Stückelberg interference pattern. Our resonant detection scheme enables the investigation of novel features when the drive frequency is comparable to the resonator frequency. Models based on adiabatic approximation, rotating wave approximation, and Floquet theory explain our experimental observations.

cond-mat.mes-hall

Coherent spin-qubit photon coupling

Electron spins hold great promise for quantum computation due to their long coherence times. An approach to realize interactions between distant spin-qubits is to use photons as carriers of quantum information. We demonstrate strong coupling between single microwave photons in a NbTiN high impedance cavity and a three-electron spin-qubit in a GaAs triple quantum dot. We resolve the vacuum Rabi mode splitting with a coupling strength of $g/2π\simeq31$ MHz and a qubit decoherence of $γ_2/2π\simeq 20$ MHz. We can tune the decoherence electrostatically and obtain a minimal $γ_2/2π\simeq 10$ MHz for $g/2π\simeq 23$ MHz. The dependence of the qubit-photon coupling strength on the tunable electric dipole moment of the qubit is measured directly using the ac Stark effect. Our demonstration of strong spin-photon interaction is an important step towards coherent long-distance coupling of spin-qubits.

cond-mat.mes-hall

All-Microwave Control and Dispersive Readout of Gate-Defined Quantum Dot Qubits in Circuit Quantum Electrodynamics

Developing fast and accurate control and readout techniques is an important challenge in quantum information processing with semiconductor qubits. Here, we study the dynamics and the coherence properties of a GaAs/AlGaAs double quantum dot (DQD) charge qubit strongly coupled to a high-impedance SQUID array resonator. We drive qubit transitions with synthesized microwave pulses and perform qubit readout through the state dependent frequency shift imparted by the qubit on the dispersively coupled resonator. We perform Rabi oscillation, Ramsey fringe, energy relaxation and Hahn-echo measurements and find significantly reduced decoherence rates down to $γ_2/2π\sim 3\,\rm{MHz}$ corresponding to coherence times of up to $T_2 \sim 50 \, \rm{ns}$ for charge states in gate defined quantum dot qubits.

quant-ph

Scanning gate experiments: from strongly to weakly invasive probes

An open resonator fabricated in a two-dimensional electron gas is used to explore the transition from strongly invasive scanning gate microscopy to the perturbative regime of weak tip-induced potentials. With the help of numerical simulations that faithfully reproduce the main experimental findings, we quantify the extent of the perturbative regime in which the tip-induced conductance change is unambiguously determined by properties of the unperturbed system. The correspondence between the experimental and numerical results is established by analyzing the characteristic length scale and the amplitude modulation of the conductance change. In the perturbative regime, the former is shown to assume a disorder-dependent maximum value, while the latter linearly increases with the strength of a weak tip potential.

cond-mat.mes-hall

Scattering mechanisms of highest-mobility InAs/Al$_{x}$Ga$_{1-x}$Sb quantum wells

We study molecular beam epitaxially grown, undoped Al$_{x}$Ga$_{1-x}$Sb/InAs/AlSb quantum wells with different buffer and barrier designs and varying quantum well width. The highest mobilities were achieved with Al$_{0.33}$Ga$_{0.67}$Sb buffers and lower barriers and a quantum well width of 24 nm. These quasi-single-interface InAs/AlSb quantum well devices reached a gate-tuned mobility of 2.4$~\times~10^{6}~$cm$^2$/Vs at a density of 1$\times 10^{12}$ cm$^{-2}$ and 1.3 K. In Hall bar devices boundary scattering is found to strongly influence the mobility determination in this mobility regime. Ionized background impurity scattering at low electron densities, device boundary scattering at intermediate electron densities, and intersubband scattering at high electron densities were identified as most likely dominant scattering processes. Ringlike structures in the Landau fan can be explained using a single-particle model of crossing Landau levels.

cond-mat.mtrl-sci