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K. Fukutani

Publications and source records attributed to K. Fukutani.

3 recordsLinked to original sources

Hydrogen (deuterium) dynamics and thermal stability in ion-irradiated platinum-hydride thin films synthesized at low temperature

Hydrogen (H) and deuterium (D) interactions with transition metals play a central role in heterogeneous catalysis and hydrogen-related technologies. While H-Pt surface interactions have been extensively studied, direct investigations of hydrogen incorporation and transport in Pt remain limited due to its low solubility. Here, we study H(D) incorporation and desorption dynamics in metastable $PtH(D)_x$ thin films prepared by low-energy ion irradiation, enabling hydrogen loading far above equilibrium concentrations. Nuclear reaction analysis (NRA) reveals a nonuniform hydrogen depth profile with two accumulation regions: the subsurface and the film-substrate interface. Thermal desorption spectroscopy (TDS) exhibits two desorption peaks near 190 and 230 K, consistent with hydrogen release from these sites. Resistance relaxation measurements, analyzed within a two-parallel-channel conduction model, indicate different relaxation kinetics for subsurface and near-interface hydrogen. Arrhenius analysis reveals two thermally activated processes for $PtH_x$ with an average hydrogen concentration of $x = 0.15$, with activation energies of $130 \pm 18$ meV (subsurface) and $164 \pm 26$ meV (near interface). Above 140 K, D exhibits slower relaxation rates with activation energies of $117 \pm 8$ and $121 \pm 7$ meV for $PtD_x$ prepared under the same implantation dose. Within experimental uncertainty, the activation barriers remain comparable, while the prefactors are reduced significantly for D, indicating isotope-dependent attempt frequencies and zero-point energy effects. TDS simulations based on the Polanyi-Wigner formalism reproduce the experimental desorption spectra by resolving subsurface and near-interface contributions, in agreement with the NRA profile. These findings provide insight into hydrogen kinetics in $PtH_x$ for Pt-based catalysis, sensing, and hydrogen-metal interactions.

cond-mat.mtrl-sci

Tunable two-dimensional electron gas at the surface of thermoelectric material In$_4$Se$_3$

We report the discovery of two-dimensional electron gas (2DEG) at the surface of thermoelectric material In$_4$Se$_3$ by angle-resolved photoemission spectroscopy. The observed 2DEG exhibits a nearly isotropic band dispersion with a considerably small effective mass of m* = 0.16 m_0, and its carrier density shows a significant temperature dependence, leading to unconventional metal-semiconductor transition at the surface. The observed wide-range thermal tunability of 2DEG in In$_4$Se$_3$ gives rise to additional degrees of freedom to better control the surface carriers of semiconductors.

cond-mat.mes-hall

Thermal Transient Characterization of Packaged Thin Film Microcoolers

A network identification by deconvolution (NID) method is applied to the thermal transient response of packaged and unpackaged microcoolers. A thin film resistor on top of the device is used as the heat source and the temperature sensor. The package and the bonding thermal resistances can be easily identified by comparing structure functions. High-speed coplanar probes are used to achieve a short time resolution of roughly 100ns in the transient temperature response. This is used to separate the thermal properties of the thin film from the substrate. The obtained thermal resistances of the buffer layer and Silicon substrate are consistent with the theoretical calculations. In order to estimate the superlattice thermal resistance and separate it from the thin SiNx layer deposited underneath the thin film resistive sensor, an order of magnitude faster thermal transient response is needed.

cond-mat.mtrl-sci