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K. H. Gao

Publications and source records attributed to K. H. Gao.

2 recordsLinked to original sources

Quadrature magnetoresistance scaling reflects linear field dependence rather than strange metallicity

The quadrature scaling of magnetoresistance has been widely adopted as a hallmark of the strange metal state. However, whether this scaling signals quantum criticality or reflects conventional transport behavior remains controversial. Here, by systematically investigating the magnetotransport properties of NiTe2 nanosheets, we demonstrate that the quadrature scaling is not a unique signature of strange metallicity. We find that the scaling holds only when the crossover field , marking the transition from quadratic to linear magnetoresistance, is sufficiently small relative to the applied field range. Through controlled simulations, we show that the scaling emerges whenever linear magnetoresistance dominates, irrespective of its origin, and fails when the linear regime is inaccessible. This conclusion is supported by observations in SrTiO3 based heterostructures, where quadrature scaling appears despite the absence of strange metal behavior. Our results establish that the quadrature scaling merely reflects the presence of linear magneto resistance, urging caution in using this scaling as a diagnostic tool for exploring the strange metal state.

cond-mat.supr-con

Weak field magnetoresistance of narrow-gap semiconductor InSb

The weak antilocalization effect of InSb film in perpendicular as well as tilted magnetic field is investigated. It is found that the InSb film has quasi-two-dimensional feature and the Nyquist mechanism dominates decoherence. The two dimensionality is also verified further and the influence of roughness effect and Zeeman effect on weak antilocalization effect is studied by systematically investigating the anisotropy of weak field magnetoresistance with respect to magnetic field. It is also found that the existence of in-plane field can effectively suppress the weak antilocalization effect of InSb film and the roughness effect plays an important role in the anisotropy.

cond-mat.mtrl-sci