arXiv subjects

K. Horiba

Publications and source records attributed to K. Horiba.

At least 37 records · Page 2Linked to original sources

arXiv2018

Giant Rashba splitting of quasi-1D surface states on Bi/InAs(110)-(2$\times$1)

Electronic states on the Bi/InAs(110)-(2$\times$1) surface and its spin-polarized structure are revealed by angle-resolved photoelectron spectroscopy (ARPES), spin-resolved ARPES, and density-functional-theory calculation. The surface state showed quasi-one-dimensional (Q1D) dispersion and a nearly metallic character; the top of the hole-like surface band is just below the Fermi level. The size of the Rashba parameter ($α_{\rm R}$) reached quite a large value ($\sim$5.5 eVÅ). The present result would provide a fertile playground for further studies of the exotic electronic phenomena in 1D or Q1D systems with the spin-split electronic states as well as for advanced spintronic devices.

cond-mat.mtrl-sci↗

arXiv2018

Angle-resolved photoemission spectroscopy of the low-energy electronic structure of superconducting Pr$_2$CuO$_4$ driven by oxygen non-stoichiometry

Bulk crystals of electron-doped cuprates with the T'-type structure require both Ce substitutions and reduction annealing for the emergence of superconductivity while the reduction annealing alone can induce superconductivity in thin films of the T'-type cuprates. In order to reveal low-energy electronic states which are responsible for the superconductivity, we have conducted angle-resolved photoemission spectroscopy measurements on thin films of the superconducting Ce-free T'-type cuprate Pr$_2$CuO$_4$. The results indicate that the overall band structure and the Fermi surface area of the superconducting Pr$_2$CuO$_4$ are similar to those of superconducting Ce-doped bulk single crystals, highlighting the importance of the actual electron concentration rather than the Ce concentration when discussing the physical properties of the T'-type cuprates.

cond-mat.supr-con↗

arXiv2018

High-density two-dimensional electron system induced by oxygen vacancies in ZnO

We realize a two-dimensional electron system (2DES) in ZnO by simply depositing pure aluminum on its surface in ultra-high vacuum, and characterize its electronic structure using angle-resolved photoemission spectroscopy. The aluminum oxidizes into alumina by creating oxygen vacancies that dope the bulk conduction band of ZnO and confine the electrons near its surface. The electron density of the 2DES is up to two orders of magnitude higher than those obtained in ZnO heterostructures. The 2DES shows two $s$-type subbands, that we compare to the $d$-like 2DESs in titanates, with clear signatures of many-body interactions that we analyze through a self-consistent extraction of the system self-energy and a modeling as a coupling of a 2D Fermi liquid with a Debye distribution of phonons.

cond-mat.mtrl-sci↗

arXiv2018

Observation of Dirac-like energy band and ring-torus Fermi surface associated with the nodal line in topological insulator CaAgAs

One of key challenges in current material research is to search for new topological materials with inverted bulk-band structure. In topological insulators, the band inversion caused by strong spin-orbit coupling leads to opening of a band gap in the entire Brillouin zone, whereas an additional crystal symmetry such as point-group and nonsymmorphic symmetries sometimes prohibits the gap opening at/on specific points or line in momentum space, giving rise to topological semimetals. Despite many theoretical predictions of topological insulators/semimetals associated with such crystal symmetries, the experimental realization is still relatively scarce. Here, using angle-resolved photoemission spectroscopy with bulk-sensitive soft x-ray photons, we experimentally demonstrate that hexagonal pnictide CaAgAs belongs to a new family of topological insulators characterized by the inverted band structure and the mirror reflection symmetry of crystal. We have established the bulk valence-band structure in three-dimensional Brillouin zone, and observed the Dirac-like energy band and ring-torus Fermi surface associated with the line node, where bulk valence and conducting bands cross on a line in the momentum space under negligible spin-orbit coupling. Intriguingly, we found that no other bands cross the Fermi level and therefore the low-energy excitations are solely characterized by the Dirac-like band. CaAgAs provides an excellent platform to study the interplay among low-energy electron dynamics, crystal symmetry, and exotic topological properties.

cond-mat.mes-hall↗

arXiv2017

Converting topological insulators into topological metals within the tetradymite family

We report the electronic band structures and concomitant Fermi surfaces for a family of exfoliable tetradymite compounds with the formula $T_2$$Ch_2$$Pn$, obtained as a modification to the well-known topological insulator binaries Bi$_2$(Se,Te)$_3$ by replacing one chalcogen ($Ch$) with a pnictogen ($Pn$) and Bi with the tetravalent transition metals $T$ $=$ Ti, Zr, or Hf. This imbalances the electron count and results in layered metals characterized by relatively high carrier mobilities and bulk two-dimensional Fermi surfaces whose topography is well-described by first principles calculations. Intriguingly, slab electronic structure calculations predict Dirac-like surface states. In contrast to Bi$_2$Se$_3$, where the surface Dirac bands are at the $Γ-$point, for (Zr,Hf)$_2$Te$_2$(P,As) there are Dirac cones of strong topological character around both the $\bar Γ$- and $\bar {M}$-points which are above and below the Fermi energy, respectively. For Ti$_2$Te$_2$P the surface state is predicted to exist only around the $\bar {M}$-point. In agreement with these predictions, the surface states that are located below the Fermi energy are observed by angle resolved photoemission spectroscopy measurements, revealing that they coexist with the bulk metallic state. Thus, this family of materials provides a foundation upon which to develop novel phenomena that exploit both the bulk and surface states (e.g., topological superconductivity).

cond-mat.str-el↗

arXiv2017

Three-dimensional band structure of LaSb and CeSb:Absence of band inversion

We have performed angle-resolved photoemission spectroscopy (ARPES) of LaSb and CeSb, a candidate of topological insulator. Using soft-x-ray photons, we have accurately determined the three-dimensional bulk band structure and revealed that the band inversion at the Brillouin-zone corner - a prerequisite for realizing topological-insulator phase - is absent in both LaSb and CeSb. Moreover, unlike the ARPES data obtained with soft-x-ray photons, those with vacuum ultraviolet (VUV) photons were found to suffer significant $k_z$ broadening. These results suggest that LaSb and CeSb are topologically trivial semimetals, and unusual Dirac-cone-like states observed with VUV photons are not of the topological origin.

cond-mat.mtrl-sci↗

arXiv2016

Hubbard band or oxygen vacancy states in the correlated electron metal SrVO$_3$?

We study the effect of oxygen vacancies on the electronic structure of the model strongly correlated metal SrVO$_3$. By means of angle-resolved photoemission (ARPES) synchrotron experiments, we investigate the systematic effect of the UV dose on the measured spectra. We observe the onset of a spurious dose-dependent prominent peak at an energy range were the lower Hubbard band has been previously reported in this compound, raising questions on its previous interpretation. By a careful analysis of the dose dependent effects we succeed in disentangling the contributions coming from the oxygen vacancy states and from the lower Hubbard band. We obtain the intrinsic ARPES spectrum for the zero-vacancy limit, where a clear signal of a lower Hubbard band remains. We support our study by means of state-of-the-art ab initio calculations that include correlation effects and the presence of oxygen vacancies. Our results underscore the relevance of potential spurious states affecting ARPES experiments in correlated metals, which are associated to the ubiquitous oxygen vacancies as extensively reported in the context of a two-dimensional electron gas (2DEG) at the surface of insulating $d^0$ transition metal oxides.

cond-mat.str-el↗

arXiv2015

Fermi Surfaces and $p$-$d$ Hybridization in the Diluted Magnetic Semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ Studied by Soft X-ray Angle Resolved Photoemission Spectroscopy

The electronic structure of the new diluted magnetic semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ ($x=0.30$, $y=0.15$) in single crystal form has been investigated by angle-resolved photoemission spectroscopy (ARPES). %High density of states of nondispersive bands composed of the Zn $3d$ orbitals are observed with ultraviolet incident light. Measurements with soft x-rays clarify the host valence-band electronic structure primarily composed of the As $4p$ states. Two hole pockets around the $Γ$ point, a hole corrugated cylinder surrounding the $Γ$ and Z points, and an electron pocket around the Z point are observed, and explain the metallic transport of Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$. This is contrasted with Ga$_{1-x}$Mn$_{x}$As (GaMnAs), where it is located above the As $4p$ valence-band maximum (VBM) and no Fermi surfaces have been clearly identified. Resonance soft x-ray ARPES measurements reveal a nondispersive (Kondo resonance-like) Mn $3d$ impurity band near the Fermi level, as in the case of GaMnAs. However, the impurity band is located well below the VBM, unlike the impurity band in GaMnAs, which is located around and above the VBM. We conclude that, while the strong hybridization between the Mn $3d$ and the As $4p$ orbitals plays an important role in creating the impurity band and inducing high temperature ferromagnetism in both systems, the metallic transport may predominantly occur in the host valence band in Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ and in the impurity band in GaMnAs.

cond-mat.mtrl-sci↗

arXiv2014

Fate of $yz$/$zx$ orbital degeneracy and $xy$ Fermi surface in Ru substituted FeSe$_{1-x}$Te$_{x}$

We have investigated the impact of Ru substitution on the multi-band electronic structure of FeSe$_{1-x}$Te$_x$ by means of angle-resolved photoemission spectroscopy (ARPES). The ARPES results exhibit suppression of the $xy$ Fermi surface and the spectral broadening near the zone boundaries, which can be associated with the lattice disorder introduced by the Ru substitution. The degeneracy of the Fe 3$d$ $yz$/$zx$ bands at the zone center, which is broken in FeSe$_{1-x}$Te$_x$, is partly recovered with the Ru substitution, indicating coexistence of nematic and non-nematic electronic states.

cond-mat.supr-con↗

arXiv2014

Coexistence of Bloch electrons and glassy electrons in Ca10(Ir4As8)(Fe2_xIrxAs2)5 revealed by angle-resolved photoemission spectroscopy

Angle-resolved photoemission spectroscopy of Ca10(Ir4As8)(Fe2_xIrxAs2)5 shows that the Fe 3d electrons in the FeAs layer form the hole-like Fermi pocket at the zone center and the electron-like Fermi pockets at the zone corners as commonly seen in various Fe-based superconductors. The FeAs layer is heavily electron doped and has relatively good two dimensionality. On the other hand, the Ir 5d electrons are metallic and glassy probably due to atomic disorder related to the Ir 5d orbital instability. Ca10(Ir4As8)(Fe2_xIrxAs2)5 exhibits a unique electronic state where the Bloch electrons in the FeAs layer coexist with the glassy electrons in the Ir4As8 layer.

cond-mat.supr-con↗

arXiv2013

Te 5p orbitals bring three-dimensional electronic structure to two-dimensional Ir0.95Pt0.05Te2

We have studied the nature of the three-dimensional multi-band electronic structure in the twodimensional triangular lattice Ir1-xPtxTe2 (x=0.05) superconductor using angle-resolved photoemission spectroscopy (ARPES), x-ray photoemission spectroscopy (XPS) and band structure calculation. ARPES results clearly show a cylindrical (almost two-dimensional) Fermi surface around the zone center. Near the zone boundary, the cylindrical Fermi surface is truncated into several pieces in a complicated manner with strong three-dimensionality. The XPS result and the band structure calculation indicate that the strong Te 5p-Te 5p hybridization between the IrTe2 triangular lattice layers is responsible for the three-dimensionality of the Fermi surfaces and the intervening of the Fermi surfaces observed by ARPES.

cond-mat.supr-con↗

arXiv2012

Self-Energy Effects on the Low- to High-Energy Electronic Structure of SrVO3

The correlated electronic structure of SrVO3 has been investigated by angle-resolved photoemission spectroscopy using in-situ prepared thin films. Pronounced features of band renormalization have been observed: a sharp kink ~60 meV below the Fermi level (EF) and a broad so-called "high-energy kink" ~0.3 eV below EF as in the high-Tc cuprates although SrVO3 does not show magnetic fluctuations. We have deduced the self-energy in a wide energy range by applying the Kramers-Kronig relation to the observed spectra. The obtained self-energy clearly shows a large energy scale of ~0.7 eV which is attributed to electron-electron interaction and gives rise to the ~0.3 eV "kink" in the band dispersion as well as the incoherent peak ~1.5eV below EF. The present analysis enables us to obtain consistent picture both for the incoherent spectra and the band renormalization.

cond-mat.str-el↗

arXiv2009

Fermi surfaces, electron-hole asymmetry and correlation kink in a three-dimensional Fermi liquid LaNiO$_3$

We report the three-dimensional (3-D) momentum-resolved soft x-ray photoemission spectroscopy of the Fermi liquid LaNiO$_3$. The out-of-plane and in-plane cuts of the 3-D electron- and hole-Fermi surfaces (FSs) are observed by energy- and angle- dependent photoemission measurements. The energy bands forming the electron FS suggest an $ω^2$ dependence of the imaginary part of the self-energy and a `correlation kink' at an energy scale of 0.25 eV. In contrast, the bands which form nesting character hole FSs do not show kinks and match local density approximation calculations. The results indicate a momentum-dependent mass renormalization, leading to electron-hole asymmetry in strongly correlated LaNiO$_3$.

cond-mat.str-el↗

arXiv2008

Photoemission evidence for a Mott-Hubbard metal-insulator transition in VO$_2$

The temperature ($T$) dependent metal-insulator transition (MIT) in VO$_2$ is investigated using bulk sensitive hard x-ray ($\sim$ 8 keV) valence band, core level, and V 2$p-3d$ resonant photoemission spectroscopy (PES). The valence band and core level spectra are compared with full-multiplet cluster model calculations including a coherent screening channel. Across the MIT, V 3$d$ spectral weight transfer from the coherent ($d^1\underbar{\it {C}}$ final) states at Fermi level to the incoherent ($d^{0}+d^1\underbar{\it {L}}$ final) states, corresponding to the lower Hubbard band, lead to gap-formation. The spectral shape changes in V 1$s$ and V 2$p$ core levels as well as the valence band are nicely reproduced from a cluster model calculations, providing electronic structure parameters. Resonant-PES finds that the $d^1\underbar{\it{L}}$ states resonate across the V 2$p-3d$ threshold in addition to the $d^{0}$ and $d^1\underbar{\it {C}}$ states. The results support a Mott-Hubbard transition picture for the first order MIT in VO$_2$.

cond-mat.str-el↗

arXiv2008

Remote hole-doping of Mott insulators on the nanometer scale

At interfaces between polar and nonpolar perovskite oxides, an unusual electron-doping has been previously observed, due to electronic reconstructions. We report on remote hole-doping at an interface composed of only polar layers, revealed by high-resolution hard x-ray core-level photoemission spectroscopy. In LaAlO3/LaVO3/LaAlO3 trilayers, the vanadium valence systematically evolves from the bulk value of V3+ to higher oxidation states with decreasing LaAlO3 cap layer thickness. These results provide a synthetic approach to hole-doping transition metal oxide heterointerfaces without invoking a polar discontinuity.

cond-mat.str-el↗

arXiv2007

Coherent and Incoherent States of Electron-doped SrTiO3

Resonant photoemission at the Ti 2p and O 1s edges on a Nb-doped SrTiO3 thin film revealed that the coherent state (CS) at the Fermi level (EF) had mainly Ti 3d character whereas the incoherent in-gap state (IGS) positioned ~1.5 eV below EF had mixed character of Ti 3d and O 2p states. This indicates that the IGS is formed by a spectral-weight transfer from the CS and subsequent spectral-weight redistribution through d-p hybridization. We discuss the evolution of the excitation spectrum with 3d band filling and rationalize the IGS through a mechanism similar to that proposed by Haldane and Anderson.

cond-mat.str-el↗

arXiv2007

Hard x-ray photoemission study of LaAlO3/LaVO3 multilayers

We have studied the electronic structure of multilayers composed of a band insulator LaAlO$_3$ (LAO) and a Mott insulator LaVO$_3$ (LVO) by means of hard x-ray photoemission spectroscopy, which has a probing depth as large as $\sim 60 Å$. The Mott-Hubbard gap of LVO remained open at the interface, indicating that the interface is insulating unlike the LaTiO$_3$/SrTiO$_3$ multilayers. We found that the valence of V in LVO were partially converted from V$^{3+}$ to V$^{4+}$ only at the interface on the top side of the LVO layer and that the amount of V$^{4+}$ increased with LVO layer thickness. We suggest that the electronic reconstruction to eliminate the polarity catastrophe inherent in the polar heterostructure is the origin of the highly asymmetric valence change at the LVO/LAO interfaces.

cond-mat.str-el↗

arXiv2006

Hard X-ray Cu $2p$ Core-Level Photoemission of High-$T_c$ Cuprate Superconductors

We have performed a detailed study of Cu $2p$ core-level spectra in single layer La$_{2-x}$Sr$_{x}$CuO$_{4}$, La doped Bi$_2$Sr$_{1.6}$La$_{0.4}$CuO$_{6+δ}$ (Bi2201) and bilayer Bi$_2$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$ (Bi2212) high-temperature superconductors by using hard x-ray photoemission (HX-PES). We identify the Cu$^{2+}$ derived (i) the Zhang-Rice singlet (ZRS) feature, (ii) the $d^{n+1}\underline{L}$ (ligand screened) feature, (iii) the $d^{n}$ satellite feature, as well as the hole-doping derived high binding energy feature in the main peak. In Bi-based cuprates, intensities of the $d^{n}$ satellite features seem to be strongly enhanced compared to La$_{2-x}$Sr$_{x}$CuO$_{4}$. From x-ray photon energy dependent measurements, it is shown that the increased intensity in the satellite region is associated with Bi $4s$ core-level spectral intensity. The corrected $d^{n}$ satellite intensity is independent of the doping content or number of Cu-O layers. Our results suggest a correlation of the relative intensity of ZRS feature and hole-doping induced high binding energy spectral changes in the main peak with superconductivity.

cond-mat.str-el↗