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K. J. Friedland

Publications and source records attributed to K. J. Friedland.

7 recordsLinked to original sources

A microscopic model for the magnetic field driven breakdown of the dissipationless state in the integer and fractional quantum Hall effect

Intra Landau level thermal activation, from localized states in the tail, to delocalized states above the mobility edge in the same Landau level, explains the $B_c(T)$ (half width of the dissipationless state) phase diagram for a number of different quantum Hall samples with widely ranging carrier density, mobility and disorder. Good agreement is achieved over $2-3$ orders of magnitude in temperature and magnetic field for a wide range of filling factors. The Landau level width is found to be independent of magnetic field. The mobility edge moves, in the case of changing Landau level overlap to maintain a sample dependent critical density of states at that energy. An analysis of filling factor $ν=2/3$ shows that the composite Fermion Landau levels have exactly the same width as their electron counterparts. An important ingredient of the model is the Lorentzian broadening with long tails which provide localized states deep in the gap which are essential in order to reproduce the robust high temperature $B_c(T)$ phase observed in experiment.

cond-mat.mes-hall

Measurement of the infrared transmission through a single doped GaAs quantum well in an external magnetic field: Evidence for polaron effects

Precise absolute far-infra-red magneto-transmission experiments have been performed in magnetic fields up to 33 T on a series of single GaAs quantum wells doped at different levels. The transmission spectra have been simulated with a multilayer dielectric model. The imaginary part of the optical response function which reveals new singular features related to the electron-phonon interactions has been extracted. In addition to the expected polaronic effects due to the longitudinal optical (LO) phonon of GaAs, a new kind of carrier concentration dependent interaction with interface phonons is observed. A simple physical model is used to try to quantify these interactions and explore their origin.

cond-mat.mes-hall

Influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors

In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should be interpreted as a magnetic-field-induced Stoner transition. In this work, we extend the analysis to investigate the influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors. The single-particle Zeeman energy is tuned through the application of an additional in-plane magnetic field. Both the evolution of the spin polarization of the system and the critical magnetic field for spin splitting are well described as a function of the tilt angle of the sample in the magnetic field.

cond-mat.mes-hall

In-plane optical anisotropy due to conduction band electron wavefunctions

Photoluminescence measurements were carried out on Be $δ$-doped GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure at 1.6 K in magnetic fields ($B$) up to 5 T. Luminescence originating from recombination of a two-dimensional electron gas (2DEG) and photo excited holes localized on Be acceptors was analyzed. The degree of circular polarization ($γ_C$) of the luminescence from fully occupied Landau levels was determined as a function of $B$ and the 2DEG concentration, $n_s$. At $B$ constant, $γ_C$ decreased with the increase of $n_s$. Two mechanisms of the $γ_C(n_s)$ dependence are discussed: a) the Stark effect on a photo excited hole bound to Be acceptor and b) the in-plane anisotropy of the intensity of optical transitions. A quantitative analysis shows that the influence of the Stark effect on $γ_C$ is negligible in the present experiment. We propose that the $γ_C(n_s)$ dependence results from the $C_{2v}$ symmetry of conduction band electron wavefunctions and we give qualitative arguments supporting this interpretation.

cond-mat.mes-hall

The quantum Hall ferromagnet at high filling factors: A magnetic field induced Stoner transition

Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK temperature to characterize the electronic density of states and estimate the strength of many body interactions. A simple model with no free parameters correctly predicts the magnetic field required to observe spin splitting confirming that the appearance of spin splitting is a result of a competition between the disorder induced energy cost of flipping spins and the exchange energy gain associated with the polarized state. In this model, the single particle Zeeman energy plays no role, so that the appearance of this quantum Hall ferromagnet in the highest occupied Landau level can also be thought of as a magnetic field induced Stoner transition.

cond-mat.mes-hall

Quantized Dispersion of Two-Dimensional Magnetoplasmons Detected by Photoconductivity Spectroscopy

We find that the long-wavelength magnetoplasmon, resistively detected by photoconductivity spectroscopy in high-mobility two-dimensional electron systems, deviates from its well-known semiclassical nature as uncovered in conventional absorption experiments. A clear filling-factor dependent plateau-type dispersion is observed that reveals a so far unknown relation between the magnetoplasmon and the quantum Hall effect.

cond-mat.mes-hall

Magneto infra-red absorption in high electronic density GaAs quantum wells

Magneto infra-red absorption measurements have been performed in a highly doped GaAs quantum well which has been lifted off and bonded to a silicon substrate, in order to study the resonant polaron interaction. It is found that the pinning of the cyclotron energy occurs at an energy close to that of the transverse optical phonon of GaAs. This unexpected result is explained by a model taking into account the full dielectric constant of the quantum well.

cond-mat