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K. Mueller

Publications and source records attributed to K. Mueller.

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Electrically tunable orbital coupling and quantum light emission from O-band quantum dot molecules

We present the observation of electrically tunable quantum coupling of orbital states in individual InAs/InGaAs quantum dot molecules emitting in the telecom O-band (~1300 nm). By tuning the static electric field along the growth axis of the QD-molecule, we observe pronounced anticrossings between excitonic transitions and determine the dependence of the interdot electron tunnel coupling on the interdot separation. As the electric field applied along the growth axis of the QD-molecules increases, positively charged exciton complexes sequentially emerge in the time-integrated emission spectra due to electron escape from the system while holes remain trapped. Moreover, for strong pumping, biexciton emission from the O-band molecules is identified. We demonstrate single-photon emission from the InAs/InGaAs QD-molecule emitting around 1300 nm with a g(2)(0) = 0.017(2) and explore the impact of tuning orbital coupling on the second-order correlation function.

cond-mat.mes-hall

Bound on 3+1 active-sterile neutrino mixing from the first four-week science run of KATRIN

We report on the light sterile neutrino search from the first four-week science run of the KATRIN experiment in~2019. Beta-decay electrons from a high-purity gaseous molecular tritium source are analyzed by a high-resolution MAC-E filter down to 40 eV below the endpoint at 18.57 keV. We consider the framework with three active neutrinos and one sterile neutrino of mass $m_{4}$. The analysis is sensitive to a fourth mass state $m^2_{4} \lesssim$ 1000 eV$^2$ and to active-to-sterile neutrino mixing down to $|U_{e4}|^2 \gtrsim 2\cdot10^{-2}$. No significant spectral distortion is observed and exclusion bounds on the sterile mass and mixing are reported. These new limits supersede the Mainz results and improve the Troitsk bound for $m^2_{4} <$ 30 eV$^2$. The reactor and gallium anomalies are constrained for $ 100 < \Delta{m}^2_{41} < 1000$ eV$^2$.

hep-ex

Enhanced photoluminescence emission from two-dimensional silicon photonic crystal nanocavities

We present a temperature dependent photoluminescence study of silicon optical nanocavities formed by introducing point defects into two-dimensional photonic crystals. In addition to the prominent TO phonon assisted transition from crystalline silicon at ~1.10 eV we observe a broad defect band luminescence from ~1.05-1.09 eV. Spatially resolved spectroscopy demonstrates that this defect band is present only in the region where air-holes have been etched during the fabrication process. Detectable emission from the cavity mode persists up to room-temperature, in strong contrast the background emission vanishes for T > 150 K. An Ahrrenius type analysis of the temperature dependence of the luminescence signal recorded either in-resonance with the cavity mode, or weakly detuned, suggests that the higher temperature stability may arise from an enhanced internal quantum efficiency due to the Purcell-effect.

cond-mat.mes-hall