arXiv subjects

K. Muraki

Publications and source records attributed to K. Muraki.

At least 19 recordsLinked to original sources

arXiv2023

Gate-tunable giant superconducting nonreciprocal transport in few-layer $T_{\rm d}$-MoTe$_2$

We demonstrate gate-tunable giant field-dependent nonreciprocal transport (magnetochiral anisotropy) in a noncentrosymmetric superconductor $T_{\rm d}$-MoTe$_2$ in the thin limit. Giant magnetochiral anisotropy (MCA) with a rectification coefficient $\gamma$ = $3.1 \times 10^6$ T$^{-1}$ A$^{-1}$, is observed at 230 mK, below the superconducting transition temperature ($T_c$). This is one of the largest values reported so far and is likely attributed to the reduced symmetry of the crystal structure. The temperature dependence of $\gamma$ indicates that the ratchet-like motion of magnetic vortices is the origin of the MCA, as supported by our theoretical model. For bilayer $T_{\rm d}$-MoTe$_2$, we successfully perform gate control of the MCA and realize threefold modulation of $\gamma$. Our experimental results provide a new route to realizing electrically controllable superconducting rectification devices in a single material.

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arXiv2022

Impact of in-situ controlled disorder screening on fractional quantum Hall effects and composite-fermion transport

We examine the impact of random potential due to remote impurites (RIs) and its in-situ controlled screening on fractional quantum Hall effects (FQHEs) around Landau-level filling factor $\nu = 1/2$. The experiment is made possible by using a dual-gate GaAs quantum well (QW) that allows for the independent control of the density $n_{e}$ of the two-dimensional electron system in the QW and that ($n_\text{SL}$) of excess electrons in the modulation-doping superlattice. As the screening is reduced by decreasing $n_\text{SL}$ at a fixed $n_{e}$, we observe a decrease in the apparent energy gap of the FQHEs deduced from thermal activation, which signifies a corresponding increase in the disorder broadening $\Gamma$ of composite fermions (CFs). Interestingly, the increase in $\Gamma$ is accompanied by a noticeable increase in the longitudinal resistivity at $\nu = 1/2$ ($\rho_{1/2}$), with a much stronger correlation with $\Gamma$ than electron mobility $\mu$ has. The in-situ control of RI screening enables us to disentangle the contributions of RIs and background impurities (BIs) to $\rho_{1/2}$, with the latter in good agreement with the CF theory. We construct a scaling plot that helps in estimating the BI contribution to $\rho_{1/2}$ for a given set of $n_{e}$ and $\mu$.

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arXiv2021

Gate tuning of fractional quantum Hall states in InAs two-dimensional electron gas

We report the observation of fractional quantum Hall (FQH) effects in a two-dimensional electron gas (2DEG) confined to an InAs/AlGaSb quantum well, using a dual-gated Hall-bar device allowing for the independent control of the vertical electric field and electron density. At a magnetic field of 24 T, we observe FQH states at several filling factors, namely $ν= 5/3$, $2/3$, and $1/3$, in addition to the $ν= 4/3$ previously reported for an InAs 2DEG. The $ν= 4/3$ and $5/3$ states, which are absent at zero back-gate voltage, emerge as the quantum well is made more symmetric by applying a positive back-gate voltage. The dependence of zero-field electron mobility on the quantum-well asymmetry reveals a significant contribution of interface-roughness scattering, with much stronger scattering at the lower InAs/AlGaSb interface. However, the dependence of the visibility of the FQH effects on the quantum-well asymmetry is not entirely consistent with that of mobility, suggesting that a different source of disorder is also at work.

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arXiv2020

Energy gap tuning and gate-controlled topological phase transition in InAs/In$_{x}$Ga$_{1-x}$Sb composite quantum wells

We report transport measurements of strained InAs/In$_{x}$Ga$_{1-x}$Sb composite quantum wells (CQWs) in the quantum spin Hall phase, focusing on the control of the energy gap through structural parameters and an external electric field. For highly strained CQWs with $x = 0.4$, we obtain a gap of 35 meV, an order of magnitude larger than that reported for binary InAs/GaSb CQWs. Using a dual-gate configuration, we demonstrate an electrical-field-driven topological phase transition, which manifests itself as a re-entrant behavior of the energy gap. The sizeable energy gap and high bulk resistivity obtained in both the topological and normal phases of a single device open the possibility of electrical switching of the edge transport.

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arXiv2020

Suppression of Gate Screening on Edge Magnetoplasmons by Highly Resistive ZnO Gate

We investigate a way to suppress high-frequency coupling between a gate and low-dimensional electron systems in the gigahertz range by measuring the velocity of edge magnetoplasmons (EMPs) in InAs quantum Hall systems.We compare the EMPvelocity in three samples with different electromagnetic environments-one has a highly resistive zinc oxide (ZnO) top gate, another has a normal metal (Ti/Au) top gate, and the other does not have a gate. The measured EMP velocity in the ZnO gate sample is one order of magnitude larger than that in the Ti/Au gate sample and almost the same as that in the ungated sample. As is well known, the smaller velocity in the Ti/Au gate sample is due to the screening of the electric field in EMPs. The suppression of the gate screening effect in the ZnO gate sample allows us to measure the velocity of unscreened EMPs while changing the electron density. It also offers a way to avoid unwanted high-frequency coupling between quantum Hall edge channels and gate electrodes.

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arXiv2020

Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells

We study the influence of epitaxial strain on the electronic properties of InAs/GaSb composite quantum wells (CQWs), host structures for quantum spin Hall insulators, by transport measurements and eight-band $\mathbf{k\cdot p}$ calculations. Using different substrates and buffer layer structures for crystal growth, we prepare two types of samples with vastly different strain conditions. CQWs with a nearly strain-free GaSb layer exhibit a resistance peak at the charge neutrality point that reflects the opening of a topological gap in the band-inverted regime. In contrast, for CQWs with 0.50\% biaxial tensile strain in the GaSb layer, semimetallic behavior indicating a gap closure is found for the same degree of band inversion. Additionally, with the tensile strain, the boundary between the topological and nontopological regimes is located at a larger InAs thickness. Eight-band $\mathbf{k\cdot p}$ calculations reveal that tensile strain in GaSb not only shifts the phase boundary but also significantly modifies the band structure, which can result in the closure of an indirect gap and make the system semimetallic even in the topological regime. Our results thus provide a global picture of the topological-nontopological phase diagram as a function of layer thicknesses and strain.

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arXiv2019

Pseudospin Berry phase as a signature of nontrivial band topology in a two-dimensional system

Electron motion in crystals is governed by the coupling between crystal momentum and internal degrees of freedom such as spin implicit in the band structure. The description of this coupling in terms of a momentum-dependent effective field and the resultant Berry phase has greatly advanced our understanding of diverse phenomena including various Hall effects and has lead to the discovery of new states of matter exemplified by topological insulators. While experimental studies on topological systems have focused on the gapless states that emerge at the surfaces or edges, the underlying nontrivial topology in the bulk has not been manifested. Here we report the observation of Berry's phase in magneto-oscillations and quantum Hall effects of a coupled electron-hole system hosted in quantum wells with inverted bands. In contrast to massless Dirac fermions in graphene, for which the Berry phase $Γ$ is quantized at $π$, we observe that $Γ$ varies with the Fermi level $E_\mathrm{F}$, passing through $π$ as $E_\mathrm{F}$ traverses the energy gap that opens due to electron-hole hybridization. We show that the evolution of $Γ$ is a manifestation of the pseudospin texture that encodes the momentum-dependent electron-hole coupling and is therefore a bulk signature of the nontrivial band topology.

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arXiv2019

Counterflowing edge current and its equilibration in quantum Hall devices with sharp edge potential: Roles of incompressible strips and contact configuration

We report the observation of counterflowing edge current in InAs quantum wells which leads to the breakdown of quantum Hall (QH) effects at high magnetic fields. Counterflowing edge channels arise from the Fermi-level pinning of InAs and the resultant sharp edge potential with downward bending. By measuring the counterflow conductance for varying edge lengths, we determine the effective number $\langle N_\text{C} \rangle$ of counterflowing modes and their equilibration length $λ_\text{eq}$ at bulk integer filling factor $ν= 1$--$4$. $λ_\text{eq}$ increased exponentially with magnetic field $B$, reaching $200~μ$m for $ν= 4$ at $B \geq 7.6$~T. Our data reveal important roles of the innermost incompressible strip with even filling in determining $\langle N_\text{C} \rangle$ and $λ_\text{eq}$ and the impact of the contact configuration on the QH effect breakdown. Our results show that counterflowing edge channels manifest as transport anomalies only at high fields and in short edges. This in turn suggests that, even in the integer QH regime, the actual microscopic structure of edge states can differ from that anticipated from macroscopic transport measurements, which is relevant to various systems including atomic-layer materials.

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arXiv2017

Detection and control of spin-orbit interactions in a GaAs hole quantum point contact

We investigate the relationship between the Zeeman interaction and the inversion asymmetry induced spin orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in crossing and anti-crossing of adjacent spin-split hole subbands in a magnetic field. We demonstrate theoretically and experimentally that the anti-crossing energy gap depends on the interplay between the SOI terms and the highly anisotropic hole g tensor, and that this interplay can be tuned by selecting the crystal axis along which the current and magnetic field are aligned. Our results constitute independent detection and control of the Dresselhaus and Rashba SOIs in hole systems, which could be of importance for spintronics and quantum information applications.

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arXiv2017

Electrical control of the sign of the g-factor in a GaAs hole quantum point contact

Zeeman splitting of 1D hole subbands is investigated in quantum point contacts (QPCs) fabricated on a (311) oriented GaAs-AlGaAs heterostructure. Transport measurements can determine the magnitude of the g-factor, but cannot usually determine the sign. Here we use a combination of tilted fields and a unique off-diagonal element in the hole g-tensor to directly detect the sign of g*. We are able to tune not only the magnitude, but also the sign of the g-factor by electrical means, which is of interest for spintronics applications. Furthermore, we show theoretically that the resulting behavior of g* can be explained by the momentum dependence of the spin-orbit interaction.

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arXiv2016

Long-lived binary tunneling spectrum in a quantum-Hall Tomonaga-Luttinger liquid

The existence of long-lived non-equilibrium states without showing thermalization, which has previously been demonstrated in time evolution of ultracold atoms, suggests the possibility of their spatial analogue in transport behavior of interacting electrons in solid-state systems. Here we report long-lived non-equilibrium states in one-dimensional edge channels in the integer quantum Hall regime. An indirect heating scheme in a counterpropagating configuration is employed to generate a non-trivial binary spectrum consisting of high- and low-temperature components. This unusual spectrum is sustained even after travelling 5 - 10 μm, much longer than the length for electronic relaxation (about 0.1 μm), without showing significant thermalization. This observation is consistent with the integrable model of Tomonaga-Luttinger liquid. The long-lived spectrum implies that the system is well described by non-interacting plasmons, which are attractive for carrying information for a long distance.

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arXiv2014

NMR profiling of quantum electron solids in high magnetic fields

When the motion of electrons is restricted to a plane under a perpendicular magnetic field B, a variety of quantum phases emerge at low temperatures whose properties are dictated by the Coulomb interaction and its interplay with disorder. At very strong B, the sequence of fractional quantum Hall (FQH) liquid phases terminates in an insulating phase, which is widely believed to be due to the solidification of electrons into domains possessing Wigner crystal (WC) order. The existence of such WC domains is signaled by the emergence of microwave pinning-mode resonances, which reflect the mechanical properties characteristic of a solid. However, the most direct manifestation of the broken translational symmetry accompanying the solidification - the spatial modulation of particles' probability amplitude - has not been observed yet. Here, we demonstrate that nuclear magnetic resonance (NMR) provides a direct probe of the density topography of electron solids in the integer and fractional quantum Hall regimes. The data uncover quantum and thermal fluctuation of lattice electrons resolved on the nanometre scale. Our results pave the way to studies of other exotic phases with non-trivial spatial spin/charge order.

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arXiv2012

Impact of graphene quantum capacitance on transport spectroscopy

We demonstrate experimentally that graphene quantum capacitance $C_{\mathrm{q}}$ can have a strong impact on transport spectroscopy through the interplay with nearby charge reservoirs. The effect is elucidated in a field-effect-gated epitaxial graphene device, in which interface states serve as charge reservoirs. The Fermi-level dependence of $C_{\mathrm{q}}$ is manifested as an unusual parabolic gate voltage ($V_{\mathrm{g}}$) dependence of the carrier density, centered on the Dirac point. Consequently, in high magnetic fields $B$, the spectroscopy of longitudinal resistance ($R_{xx}$) vs. $V_{\mathrm{g}}$ represents the structure of the unequally spaced relativistic graphene Landau levels (LLs). $R_{xx}$ mapping vs. $V_{\mathrm{g}}$ and $B$ thus reveals the vital role of the zero-energy LL on the development of the anomalously wide $ν=2$ quantum Hall state.

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arXiv2012

Magnetic-Field Dependence of Tunnel Couplings in Carbon Nanotube Quantum Dots

By means of sequential and cotunneling spectroscopy, we study the tunnel couplings between metallic leads and individual levels in a carbon nanotube quantum dot. The levels are ordered in shells consisting of two doublets with strong- and weak-tunnel couplings, leading to gate-dependent level renormalization. By comparison to a one- and two-shell model, this is shown to be a consequence of disorder-induced valley mixing in the nanotube. Moreover, a parallel magnetic field is shown to reduce this mixing and thus suppress the effects of tunnel renormalization.

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arXiv2012

Plasmon transport in graphene investigated by time-resolved measurement

Plasmons, which are collective charge oscillations, offer the potential to use optical signals in nano-scale electric circuits. Recently, plasmonics using graphene have attracted interest, particularly because of the tunable plasmon frequency through the carrier density $n$. However, the $n$ dependence of the plasmon velocity is weak ($\propto n^{1/4}$) and it is difficult to tune the frequency over orders of magnitude. Here, we demonstrate that the velocity of plasmons in graphene can be changed over two orders of magnitude by applying a magnetic field $B$ and by the presence/absence of a gate; at high $B$, edge magnetoplasmons (EMPs), which are plasmons localized at the sample edge, are formed and their velocity depends on $B$ and the gate screening effect. The wide range tunability of the velocity and the observed low-loss plasmon transport encourage designing graphene nanostructures for plasmonics applications.

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arXiv2010

Intrinsic gap and exciton condensation in the nu_T=1 bilayer system

We investigate the quasiparticle excitation of the bilayer quantum Hall (QH) system at total filling factor $ν_{\mathrm{T}} = 1$ in the limit of negligible interlayer tunneling under tilted magnetic field. We show that the intrinsic quasiparticle excitation is of purely pseudospin origin and solely governed by the inter- and intra-layer electron interactions. A model based on exciton formation successfully explains the quantitative behavior of the quasiparticle excitation gap, demonstrating the existence of a link between the excitonic QH state and the composite fermion liquid. Our results provide a new insight into the nature of the phase transition between the two states.

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arXiv2010

Fabrication and characterization of an induced GaAs single hole transistor

We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport measurements reveal periodic conductance oscillations due to Coulomb blockade. We find that the low frequency charge noise is comparable to that in modulation-doped GaAs single electron transistors (SETs), and almost an order of magnitude better than in silicon SETs.

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arXiv2008

Interplay between one-dimensional confinement and crystallographic anisotropy in ballistic hole quantum wires

We study the Zeeman splitting in induced ballistic 1D quantum wires aligned along the [233] and [011] axes of a high mobility (311)A undoped heterostructure. Our data shows that the g-factor anisotropy for magnetic fields applied along the high symmetry [011] direction can be explained by the 1D confinement only. However when the magnetic field is along [233] there is an interplay between the 1D confinement and 2D crystal anisotropy. This is highlighted for the [233] wire by an unusual non-monotonic behavior of the g-factor as the wire is made narrower.

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