K. Pantzas | Searcharxiv

arXiv2024

Time Localized Tilted Beams in Nearly-Degenerate Laser Cavities

We show that nearly degenerate Vertical External-Cavity Surface-Emitting Lasers emit tilted beams of time localized structures, i.e. mode-locked light pulses which can be individually addressed. These beams feature a Gaussian profile and they are emitted in pairs with opposite transverse k-vector. Because they are phase locked, their interference leads to a non homotetic pattern in the near-field emission of the laser. When a single pair is emitted this is a stripe pattern. Our analysis discloses the role of spherical aberrations of the cavity in stabilizing this spatio-temporal mode-locked regime and in selecting the value of the transverse wavevector.

physics.optics↗

arXiv2020

Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn layer with 5.4 at.% Sn, which is an indirect band-gap semiconductor as-grown with a compressive strain of -0.32 %, is transformed via tensile strain engineering into a truly direct band-gap semiconductor. In this approach the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. Continuous wave (cw) as well as pulsed lasing are observed at very low optical pump powers. Lasers with emission wavelength of 2.5 um have thresholds as low as 0.8kWcm^-2 for ns-pulsed excitation, and 1.1kWcm^-2 under cw excitation. These thresholds are more than two orders of magnitude lower than those previously reported for bulk GeSn lasers, approaching these values obtained for III-V lasers on Si. The present results demonstrate the feasabiliy and are the guideline for monolithically integrated Si-based laser sources on Si photonics platform.

physics.app-ph↗