arXiv subjects

K. Sundqvist

Publications and source records attributed to K. Sundqvist.

3 recordsLinked to original sources

arXiv2019

High-field Spatial Imaging of Charge Transport in Silicon at Low Temperature

We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$Ω$-cm) at temperatures of 5 K and 500 mK. We use these data to measure the lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis, and to verify our low-temperature Monte Carlo software. The range of field strengths in this paper exceed those used in the previous study (DOI: 10.1063/1.5049691) by a factor of 10, and now encompasses the region in which some recent silicon dark matter detectors operate (DOI: 10.1103/PhysRevLett.121.051301). We also report on a phenomenon of surface charge trapping which can reduce expected charge collection.

cond-mat.mtrl-sci↗

arXiv2018

Spatial Imaging of Charge Transport in Silicon at Low Temperature

We present direct imaging measurements of charge transport across a 1 cm$\times$ 1 cm$\times$ 4 mm crystal of high purity silicon ($\sim$20 k$Ω$cm) at temperatures between 500 mK and and 5 K. We use these data to determine the intervalley scattering rate of electrons as a function of the electric field applied along the $\langle 111 \rangle$ crystal axis, and we present a phenomenological model of intervalley scattering that explains the constant scattering rate seen at low-voltage for cryogenic temperatures. We also demonstrate direct imaging measurements of effective hole mass anisotropy, which is strongly dependent on both temperature and electric field strength. The observed effects can be explained by a warping of the valence bands for carrier energies near the spin-orbit splitting energy in silicon.

cond-mat.mtrl-sci↗

arXiv2010

Oblique propagation of electrons in crystals of germanium and silicon at sub-Kelvin temperature in low electric fields

We show that oblique propagation of electrons in crystals of Ge and Si, where the electron velocity does not follow the electric field even on average, can be explained using standard anisotropic theory for indirect gap semiconductors. These effects are pronounced at temperatures below ~1K and for electric fields below ~5V/cm because inter-valley transitions are energetically suppressed forcing electrons to remain in the same band valley throughout their motion and the valleys to separate in position space. To model, we start with an isotropic approximation which incorporates the average properties of the crystals with one phonon mode, and include the ellipsoidal electron valleys by transforming into a momentum space where constant energy surfaces are spheres. We include comparisons of simulated versus measured drift velocities for holes and electrons, and explain the large discrepancy between electrons and holes for shared events in adjacent electrodes.

astro-ph.IM↗