arXiv subjects

K. Tsukagoshi

Publications and source records attributed to K. Tsukagoshi.

6 recordsLinked to original sources

arXiv2022

Regulating electron diffraction direction with cylindrically symmetric rotating crystal

We report a promising InSiO film that allows simultaneous observation of sample morphology and Kikuchi patterns in raster scan mode of scanning electron microscopy. This new experimental observation suggests potential mechanism beyond existing diffraction theories. We find by simulation that this material has a novel cylindrically symmetric rotational crystalline structure that can control the diffraction direction of electrons through a specific rotational distribution of crystal planes, while being independent of the angle and energy of incident electrons within a certain range.

cond-mat.mtrl-sci↗

arXiv2022

Banach fixed-point between SEM image and EBSD diffraction pattern from a cylindrically symmetric rotating crystal

The Kikuchi bands arise from Bragg diffraction of incoherent electrons scattered within a crystalline specimen and can be observed in both the transmission and reflection modes of scanning electron microscopy (SEM). Converging, rocking, or grazing incidence beams must be used to generate divergent electron sources to obtain the Kikuchi pattern. This paper report the observation of Kikuchi pattern from SEM images of an exceptional rotating crystal with continuous rotation in the local crystal direction and satisfying cylindrical symmetry, named a cylindrically symmetric rotating crystal. SEM images of cylindrically symmetric rotating crystals reflect the interactions between electrons and the sample in both the real- and momentum-space. Furthermore, we identify an unexpected mathematical relationship between the electron backscattered diffraction (EBSD) Kikuchi pattern matrix map and the SEM image of the present sample which can be rationalized as a concrete example of the Banach fixed-point theorems in the field of EBSD technique.

cond-mat.mtrl-sci↗

arXiv2015

Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers

Understanding the interfacial electrical properties between metallic electrodes and low dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction induced crossover of electrical contact at Au/MoS2 interfaces. For MoS2 thicker than 5 layers, the contact resistivity slightly decreases with reducing MoS2 thickness. By contrast, the contact resistivity sharply increases with reducing MoS2 thickness below 5 layers, mainly governed by the quantum confinement effect. It is found that the interfacial potential barrier can be finely tailored from 0.3 to 0.6 eV by merely varying MoS2 thickness. A full evolution diagram of energy level alignment is also drawn to elucidate the thickness scaling effect. The finding of tailoring interfacial properties with channel thickness represents a useful approach controlling the metal/semiconductor interfaces which may result in conceptually innovative functionalities.

cond-mat.mes-hall↗

arXiv2005

Hall effect of quasi-hole gas in organic single-crystal transistors

Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The presence of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system.

cond-mat.mtrl-sci↗

arXiv2004

Proximity Effect in a Superconductor-Metallofullerene-Superconductor Molecular Junction

We report low-temperature transport measurements through molecules of Gd metallofullerenes between superconducting suspended electrodes. The presence and number of molecules in the 2 nm-wide gap between electrodes was determined by high resolution transmission electron microscopy. We find that a junction containing a single metallofullerene dimer between superconducting electrodes displays signs of proximity-induced superconductivity. In contrast, no proximity effects develops in junctions containing larger cluster of metallofulerenes. These results can be understood by taking into account multiple Andreev reflections, and the spin states of the Gd atoms.

cond-mat.other↗

arXiv2004

Current distribution inside Py/Cu lateral spin-valve device

We have investigated experimentally the non-local voltage signal (NLVS) in the lateral permalloy (Py)/Cu/Py spin valve devices with different width of Cu stripes. We found that NLVS strongly depends on the distribution of the spin-polarized current inside Cu strip in the vicinity of the Py-detector. To explain these data we have developed a diffusion model describing spatial (3D) distribution of the spin-polarized current in the device. The results of our calculations show that NLVS is decreased by factor of 10 due to spin flip-scattering occurring at Py/Cu interface. The interface resistivity on Py/Cu interface is also present, but its contribution to reduction of NLVS is minor. We also found that most of the spin-polarized current is injected within the region 30 nm from Py-injector/Cu interface. In the area at Py-detector/Cu interface, the spin-polarized current is found to flow mainly close on the injector side, with 1/e exponential decay in the magnitude within the distance 80 nm.

cond-mat.other↗