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K. Ueda

Publications and source records attributed to K. Ueda.

At least 55 records · Page 3Linked to original sources
arXiv2011

Impact of geometrical frustration on charge transport near the Mott transition in pyrochlore (Y$_{1-x}$Cd$_{x}$)$_{2}$Mo$_{2}$O$_{7}$

To search for novel spin-charge coupled phenomena in the strongly correlated electron system on a frustration lattice, charge transport and dynamics have been investigated for the hole-doped spin-glass (Mott) insulator (Y$_{1-x}$Cd$_{x}$)$_{2}$Mo$_{2}$O$_{7}$ with pyrochlore structure. Coincident with the disappearance of spin-glass state by hole doping, a diffusive metallic transport with strongly renormalized electron mass shows up with no long range spin order, which is caused by strong antiferromagnetic spin fluctuation due to the geometrical frustration.

cond-mat.str-el↗
arXiv2011

Development of portable NMR polarimeter system for polarized HD target

A portable NMR polarimeter system has been developed to measure the polarization of a polarized Hydrogen-Deuteride (HD) target for hadron photoproduction experiments at SPring-8. The polarized HD target is produced at the Research Center for Nuclear Physics (RCNP), Osaka university and is transported to SPring-8. The HD polarization should be monitored at both places. We have constructed the portable NMR polarimeter system by replacing the devices in the conventional system with the software system with PCI eXtensions for Instrumentation (PXI). The weight of the NMR system is downsized from 80 kg to 7 kg, and the cost is reduced to 25%. We check the performance of the portable NMR polarimeter system. The signal-to-noise (S/N) ratio of the NMR signal for the portable system is about 50% of that for the conventional NMR system. This performance of the portable NMR system is proved to be compatible with the conventional NMR system for the polarization measurement.

physics.ins-det↗
arXiv2011

HD gas analysis with Gas Chromatography and Quadrupole Mass Spectrometer

A gas analyzer system has been developed to analyze Hydrogen-Deuteride (HD) gas for producing frozen-spin polarized HD targets, which are used for hadron photoproduction experiments at SPring-8. Small amounts of ortho-H$_{2}$ and para-D$_{2}$ gas mixtures ($\sim$0.01%) in the purified HD gas are a key to realize a frozen-spin polarized target. In order to obtain reliable concentrations of these gas mixtures in the HD gas, we produced a new gas analyzer system combining two independent measurements with the gas chromatography and the QMS. The para-H$_{2}$, ortho-H$_{2}$, HD, and D$_{2}$ are separated using the retention time of the gas chromatography and the mass/charge. It is found that the new gas analyzer system can measure small concentrations of $\sim$0.01% for the otho-H$_2$ and D$_2$ with good S/N ratios.

nucl-ex↗
arXiv2010

Entanglement perturbation theory for the quantum ground states in two dimensions

A simple, general and practically exact method, Entanglement Perturbation Theory (EPT), is formulated to calculate the ground states of 2D macroscopic quantum systems with translational symmetry. An emphasis will be placed on the applicability of EPT to fermions. We will discuss some preliminary evidences which indicate a potential of EPT.

cond-mat.str-el↗
arXiv2009

Epitaxial Growth of a Full-Heusler Alloy Co$_{2}$FeSi on Silicon by Low-Temperature Molecular Beam Epitaxy

For electrical spin injection and detection of spin-polarized electrons in silicon, we explore highly epitaxial growth of ferromagnetic full-Heusler-alloy Co2FeSi thin films on silicon substrates using low-temperature molecular beam epitaxy (LTMBE). Although in-situ reflection high energy electron diffraction images clearly show two-dimensional epitaxial growth for growth temperatures T_G of 60, 130, and 200 C, cross-sectional transmission electron microscopy experiments reveal that there are single-crystal phases other than Heusler alloys near the interface between Co_2FeSi and Si for T_G = 130 and 200 C. On the other hand, almost perfect heterointerfaces are achieved for T_G = 60 C. These results and magnetic measurements indicate that highly epitaxial growth of Co_2FeSi thin films on Si is demonstrated only for T_G = 60 C.

cond-mat.mtrl-sci↗
arXiv2009

Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier

We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the interface between a ferromagnetic Fe_3Si/Si contact and a Si channel (~ 10^15 cm^-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe_3Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe_3Si/Si contacts, we detect nonlocal output signals which originate from the spin accumulation in a Si channel at low temperatures.

cond-mat.mes-hall↗
arXiv2009

Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Fe_3-xMn_xSi Epilayers Grown on Ge(111)

For the study of ferromagnetic materials which are compatible with group-IV semiconductor spintronics, we demonstrate control of the ferromagnetic properties of Heusler-alloys Fe_3-xMn_xSi epitaxially grown on Ge(111) by tuning the Mn composition x. Interestingly, we obtain L2_1-ordered structures even for nonstoichiometric atomic compositions. The Curie temperature of the epilayers with x ~ 0.6 exceeds 300 K. Theoretical calculations indicate that the electronic structures of the nonstoichiometric Fe_3-xMn_xSi alloys become half-metallic for 0.75 < x < 1.5. We discuss the possibility of room-temperature ferromagnetic Fe_3-xMn_xSi/Ge epilayers with high spin polarization.

cond-mat.mtrl-sci↗
arXiv2008

Measuring the frequency of a Sr optical lattice clock using a 120-km coherent optical transfer

We demonstrate a precision frequency measurement using a phase-stabilized 120-km optical fiber link over a physical distance of 50 km. The transition frequency of the 87Sr optical lattice clock at the University of Tokyo is measured to be 429228004229874.1(2.4) Hz referenced to international atomic time (TAI). The measured frequency agrees with results obtained in Boulder and Paris at a 6*10^-16 fractional level, which matches the current best evaluations of Cs primary frequency standards. The results demonstrate the excellent functions of the intercity optical fibre link, and the great potential of optical lattice clocks for use in the redefinition of the second.

physics.atom-ph↗
arXiv2008

Epitaxial ferromagnetic Fe$_{3}$Si/Si(111) structures with high-quality hetero-interfaces

To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe$_{3}$Si/silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130 $^circ$C, we realize epitaxial growth of ferromagnetic Fe$_{3}$Si layers on Si (111) with keeping an abrupt interface, and the grown Fe$_{3}$Si layer has the ordered $DO_{3}$ phase. Measurements of magnetic and electrical properties for the Fe$_{3}$Si/Si(111) yield a magnetic moment of ~ 3.16 $mu_{B}$/f.u. at room temperature and a rectifying Schottky-diode behavior with the ideality factor of ~ 1.08, respectively.

cond-mat.mtrl-sci↗
arXiv2008

Localization of Inner-Shell Photoelectron Emission and Interatomic Coulombic Decay in Ne$_2$

We used Cold Target Recoil Ion Momentum Spectroscopy (COLTRIMS) to investigate the decay of Ne$_2$ after K-shell photoionization. The breakup into Ne$^{1+}$ / Ne$^{2+}$ shows interatomic Coulombic decay (ICD) occurring after a preceding atomic Auger decay. The molecular frame angular distributions of the photoelectron and the ICD electron show distinct, asymmetric features, which imply localization of the K-vacancy created at one of the two atomic sites of the Ne$_2$ and an emission of the ICD electron from a localized site. The experimental results are supported by calculations in frozen core Hartree-Fock approach.

physics.atm-clus↗
arXiv2007

Electron-ion-ion coincidence experiments for photofragmentation of polyatomic molecules using pulsed electric fields: treatment of random coincidences

In molecular photofragmentation processes by soft X-rays, a number of ionic fragments can be produced, each having a different abundance and correlation with the emitted electron kinetic energy. For investigating these fragmentation processes, electron-ion and electron-ion-ion coincidence experiments, in which the kinetic energy of electrons are analyzed using an electrostatic analyzer while the mass of the ions is analyzed using a pulsed electric field, are very powerful. For such measurements, however, the contribution of random coincidences is substantial and affects the data in a non-trivial way. Simple intuitive subtraction methods cannot be applied. In the present paper, we describe these electron-ion and electron-ion-ion coincidence experiments together with a subtraction method for the contribution from random coincidences. We provide a comprehensive set of equations for the data treatment, including equations for the calculation of error-bars. We demonstrate the method by applying it to the fragmentation of free CF$_3$SF$_5$ molecules.

physics.atom-ph↗
arXiv2006

An Internet-enabled technology to support Evolutionary Design

This paper discusses the systematic use of product feedback information to support life-cycle design approaches and provides guidelines for developing a design at both the product and the system levels. Design activities are surveyed in the light of the product life cycle, and the design information flow is interpreted from a semiotic perspective. The natural evolution of a design is considered, the notion of design expectations is introduced, and the importance of evaluation of these expectations in dynamic environments is argued. Possible strategies for reconciliation of the expectations and environmental factors are described. An Internet-enabled technology is proposed to monitor product functionality, usage, and operational environment and supply the designer with relevant information. A pilot study of assessing design expectations of a refrigerator is outlined, and conclusions are drawn.

cs.CE↗
arXiv2006

Fabrication and properties of MgB2/AlOx/MgB2 tunnel junctions

Sandwich-type MgB2 Josephson tunnel junctions (MgB2/AlOx/MgB2) have been fabricated using as-grown MgB2 films formed by molecular beam epitaxy. The junctions exhibited substantial supercurrent and a well-defined superconducting gap (D=2.2~2.3mV). The superconducting gap voltage (D) agrees well with those of the smaller gap in the multi-gap scenario. The IcRN product is 0.4-1.3 mV at 4.2K, but approaches to 2.0 mV at 50 mK. The Ic has peculiar temperature dependence far from the Ambegaokar-Baratoff formula. It rapidly decreases with temperature, and disappears above T = 20 K, which is much lower than the gap closing temperature. Interface microstructure between AlOx and MgB2 were investigated using cross-sectional transmission electron microscopy to clarify the problems in our tunnel junctions. There are poor-crystalline MgB2 layers and/or amorphous Mg-B composite layers of a few nanometers between AlOx barrier and the upper MgB2 layer. The poor-crystalline upper Mg-B layers seem to behave as normal metal or deteriorated superconducting layers, which may be the principal reason for all non-idealities of our MgB2/AlOx/MgB2 junctions.

cond-mat.supr-con↗
arXiv2004

All-MgB2 Josephson tunnel junctions

Sandwich-type all-MgB2 Josephson tunnel junctions (MgB2/AlOx/MgB2) have been fabricated for the first time with as-grown MgB2 films formed by molecular beam epitaxy. The junctions exhibit substantial superconducting current (IcRN product ~ 0.8 mV at 4.2K), a well-defined superconducting gap (delta = ~2.3 mV), and clear Fraunhofer patterns. The superconducting gap voltage of delta agrees well with the smaller gap in the multi-gap scenario. The results demonstrate that MgB2 has great promise for superconducting electronics that can be operated at T ~ 20 K.

cond-mat.supr-con↗
arXiv2004

NMR study of electronic state in CePt3Si

In this article, we report the temperature dependence of spin-lattice relaxation rates at two Pt sites and one Si site in CePt3Si with a non-centrosymmetric structure center. 1/T1 for both Pt sites between 2 K and 300 K and 1/T1 of Si above 3 K might be explained by the contributions from the low-lying crystal-electric-field level and the quasiparticle due to the hybridization between the ground state and conduction electrons. Just below Tc no remarkable enhancement in 1/T1 was observed. The estimated value of superconducting gap is about 2Delta = 3kBTc.

cond-mat.supr-con↗
arXiv2004

Snapshot Observation for 2D Classical Lattice Models by Corner Transfer Matrix Renormalization Group

We report a way of obtaining a spin configuration snapshot, which is one of the representative spin configurations in canonical ensemble, in a finite area of infinite size two-dimensional (2D) classical lattice models. The corner transfer matrix renormalization group (CTMRG), a variant of the density matrix renormalization group (DMRG), is used for the numerical calculation. The matrix product structure of the variational state in CTMRG makes it possible to stochastically fix spins each by each according to the conditional probability with respect to its environment.

cond-mat.stat-mech↗
arXiv2004

Theory of Metal-Insulator Transition in PrRu4P12 and PrFe4P12

All symmetry allowed couplings between the 4f^2-electron ground state doublet of trivalent praseodymium in PrRu4P12 and PrFe4P12 and displacements of the phosphorus, iron or ruthenium ions are considered. Two types of displacements can change the crystal lattice from body-centred cubic to simple orthorhombic or to simple cubic. The first type lowers the point group symmetry from tetrahedral to orthorhombic, while the second type leaves it unchanged, with corresponding space group reductions Im3 --> Pmmm and Im3 --> Pm3 respectively. In former case, the lower point-group symmetry splits the degeneracy of the 4f^2 doublet into states with opposite quadrupole moment, which then leads to anti-quadrupolar ordering, as in PrFe4P12. Either kind of displacement may conspire with nesting of the Fermi surface to cause the metal-insulator or partial metal-insulator transition observed in PrFe4P12 and PrRu4P12. We investigate this scenario using band-structure calculations, and it is found that displacements of the phosphorus ions in PrRu4P12 (with space group reduction Im3 --> Pm3) open a gap everywhere on the Fermi surface.

cond-mat.str-el↗