arXiv subjects

K. W. Kim

Publications and source records attributed to K. W. Kim.

At least 127 records · Page 7Linked to original sources

arXiv2006

Dielectric constants of Ir, Ru, Pt, and IrO2: Contributions from bound charges

We investigated the dielectric functions $ε$($ω$) of Ir, Ru, Pt, and IrO$_2$, which are commonly used as electrodes in ferroelectric thin film applications. In particular, we investigated the contributions from bound charges $ε^{b}$($ω$), since these are important scientifically as well as technologically: the $ε_1^{b}$(0) of a metal electrode is one of the major factors determining the depolarization field inside a ferroelectric capacitor. To obtain $ε_1^{b}$(0), we measured reflectivity spectra of sputtered Pt, Ir, Ru, and IrO2 films in a wide photon energy range between 3.7 meV and 20 eV. We used a Kramers-Kronig transformation to obtain real and imaginary dielectric functions, and then used Drude-Lorentz oscillator fittings to extract $ε_1^{b}$(0) values. Ir, Ru, Pt, and IrO$_2$ produced experimental $ε_1^{b}$(0) values of 48$\pm$10, 82$\pm$10, 58$\pm$10, and 29$\pm$5, respectively, which are in good agreement with values obtained using first-principles calculations. These values are much higher than those for noble metals such as Cu, Ag, and Au because transition metals and IrO$_2$ have such strong d-d transitions below 2.0 eV. High $ε_1^{b}$(0) values will reduce the depolarization field in ferroelectric capacitors, making these materials good candidates for use as electrodes in ferroelectric applications.

cond-mat.str-el↗

arXiv2006

Electronic structures of layered perovskite Sr2MO4 (M=Ru, Rh, and Ir)

We investigated the electronic structures of the two-dimensional layered perovskite Sr$_{2}$\textit{M}O$_{4}$ (\textit{M}=4\textit{d} Ru, 4\textit{d} Rh, and 5\textit{d} Ir) using optical spectroscopy and polarization-dependent O 1\textit{s} x-ray absorption spectroscopy. While the ground states of the series of compounds are rather different, their optical conductivity spectra $σ(ω)$ exhibit similar interband transitions, indicative of the common electronic structures of the 4\textit{d} and 5\textit{d} layered oxides. The energy splittings between the two $e_{g}$ orbitals, $i.e.$, $d_{3z^{2}-r^{2}}$ and $d_{x^{2}-y^{2}}$, are about 2 eV, which is much larger than those in the pseudocubic and 3\textit{d} layered perovskite oxides. The electronic properties of the Sr$_{2}$\textit{M}O$_{4}$ compounds are discussed in terms of the crystal structure and the extended character of the 4\textit{d} and 5\textit{d} orbitals.

cond-mat.str-el↗

arXiv2006

Electron spin relaxation in semiconducting carbon nanotubes: the role of hyperfine interaction

A theory of electron spin relaxation in semiconducting carbon nanotubes is developed based on the hyperfine interaction with disordered nuclei spins I=1/2 of $^{13}$C isotopes. It is shown that strong radial confinement of electrons enhances the electron-nuclear overlap and subsequently electron spin relaxation (via the hyperfine interaction) in the carbon nanotubes. The analysis also reveals an unusual temperature dependence of longitudinal (spin-flip) and transversal (dephasing) relaxation times: the relaxation becomes weaker with the increasing temperature as a consequence of the particularities in the electron density of states inherent in one-dimensional structures. Numerical estimations indicate relatively high efficiency of this relaxation mechanism compared to the similar processes in bulk diamond. However, the anticipated spin relaxation time of the order of 1 s in CNTs is still much longer than those found in conventional semiconductor structures.

cond-mat.mtrl-sci↗

arXiv2005

Non-volatile bistability effect based on electrically controlled phase transition in scaled magnetic semiconductor nanostructures

We explore the bistability effect in a dimensionally scaled semiconductor nanostruncture consisting of a diluted magnetic semiconductor quantum dot (QD) and a reservoir of itinerant holes separated by a barrier. The bistability stems from the magnetic phase transition in the QD mediated by the changes in the hole population. Our calculation shows that when properly designed, the thermodynamic equilibrium of the scaled structure can be achieved at two different configurations; i.e., the one with the QD in a ferromagnetic state with a sufficient number of holes and the other with the depopulated QD in a paramagnetic state. Subsequently, the parameter window suitable for this bistability formation is discussed along with the the conditions for the maximum robustness/non-volatility. To examine the issue of scaling, an estimation of the bistabiity lifetime is made by considering the thermal fluctuation in the QD hole population via the spontaneous transitions. A numerical evaluation is carried out for a typical carrier-mediated magnetic semiconductor (e.g., GaMnAs) as well as for a hypothetical case of high Curie temperature for potential room temperature operation.

cond-mat.other↗

arXiv2004

Bistability in a magnetic and nonmagnetic double-quantum-well structure mediated by the magnetic phase transition

The hole distribution in a double quantum well (QW) structure consisting of a magnetic and a nonmagnetic semiconductor QW is investigated as a function of temperature, the energy shift between the QWs, and other relevant parameters. When the itinerant holes mediate the ferromagnetic ordering, it is shown that a bistable state can be formed through hole redistribution, resulting in a significant change in the properties of the constituting magnetic QW (i.e., the paramagnetic-ferromagnetic transition). The model calculation also indicates a large window in the system parameter space where the bistability is possible. Hence, this structure could form the basis of a stable memory element that may be scaled down to a few hole regime.

cond-mat.other↗

arXiv2004

A prohibition of equilibrium spin currents in multi-terminal ballistic devices

We show that in the multi-terminal ballistic devices with intrinsic spin-orbit interaction connected to normal metal contacts there are no equilibrium spin currents present at any given electron energy. Obviously, this statement holds also after the integration over all occupied states. Based on the proof of this fact, a number of scenarios involving nonequilibrium spin currents is identified and further analyzed. In particular, it is shown that an arbitrary two-terminal device cannot polarize transient current. The same is true for the output terminal of an N-terminal device when all N-1 inputs are connected in parallel.

cond-mat.mes-hall↗

arXiv2004

Spin relaxation of two-dimensional holes in strained asymmetric SiGe quantum wells

We analyze spin splitting of the two-dimensional hole spectrum in strained asymmetric SiGe quantum wells (QWs). Based on the Luttinger Hamiltonian, we obtain expressions for the spin-splitting parameters up to the third order in the in-plane hole wavevector. The biaxial strain of SiGe QWs is found to be a key parameter that controls spin splitting. Application to SiGe field-effect transistor structures indicates that typical spin splitting at room temperature varies from a few tenth of meV in the case of Si QW channels to several meV for the Ge counterparts, and can be modified efficiently by gate-controlled variation of the perpendicular confining electric field. The analysis also shows that for sufficiently asymmetric QWs, spin relaxation is due mainly to the spin-splitting related D'yakonov-Perel' mechanism. In strained Si QWs, our estimation shows that the hole spin relaxation time can be on the order of a hundred picoseconds at room temperature, suggesting that such structures are suitable for p-type spin transistor applications as well.

cond-mat.mes-hall↗

arXiv2004

Electron-phonon interaction via Pekar mechanism in nanostructures

We consider an electron-acoustic phonon coupling mechanism associated with the dependence of crystal dielectric permittivity on the strain (the so-called Pekar mechanism) in nanostructures characterized by strong confining electric fields. The efficiency of Pekar coupling is a function of both the absolute value and the spatial distribution of the electric field. It is demonstrated that this mechanism exhibits a phonon wavevector dependence similar to that of piezoelectricity and must be taken into account for electron transport calculations in an extended field distribution. In particular, we analyze the role of Pekar coupling in energy relaxation in silicon inversion layers. Comparison with the recent experimental results is provided to illustrate its potential significance.

cond-mat.mes-hall↗

arXiv2004

Correlation of phonon decay with spin phase diffusion of localized electrons

A spin decoherence mechanism is proposed for localized electrons. The irregular phonon phase disturbances originated from phonon relaxation can influence electron spin precession with a net effect of spin phase decay. A quantitative analysis demonstrates relatively high efficiency of this mechanism in the low temperature and low magnetic field regime compared to the spin-flip processes.

cond-mat.mtrl-sci↗

arXiv2004

Doping of a One-Dimensional Mott Insulator: Photoemision and Optical Studies of Sr$_2$CuO$_{3+δ}$

The spectral properties of a one-dimensional (1D) single-chain Mott insulator Sr$_2$CuO$_{3}$ have been studied in angle-resolved photoemission and optical spectroscopy, at half filling and with small concentrations of extra charge doped into the chains via high oxygen pressure growth. The single- particle gap is reduced with oxygen doping, but the metallic state is not reached. The bandwidth of the charge-transfer band increases with doping, while the state becomes narrower, allowing unambiguous observation of separated spinon and holon branches in the doped system. The optical gap is not changed upon doping, indicating that a shift of chemical potential rather than decrease of corelation gap is responsible for the apparent reduction of the photoemission gap.

cond-mat.str-el↗

arXiv2004

Resonance-like electrical control of electron spin for microwave measurement

We demonstrate that the spin-polarized electron current can interact with a microwave electric field in a resonant manner. The spin-orbit interaction gives rise to an effective magnetic field proportional to the electric current. In the presence of both dc and ac electric field components, electron spin resonance occurs if the ac frequency matches with the spin precession frequency that is controlled by the dc field. In a device consisting of two spin-polarized contacts connected by a two-dimensional channel, this mechanism allows electrically tuned detection of the ac signal frequency and amplitude. For GaAs, such detection is effective in the frequency domain around tens of gigahertz.

cond-mat.mtrl-sci↗

arXiv2003

Phonon-mediated electron spin phase diffusion in a quantum dot

An effective spin relaxation mechanism that leads to electron spin decoherence in a quantum dot is proposed. In contrast to the common calculations of spin-flip transitions between the Kramers doublets, we take into account a process of phonon-mediated fluctuation in the electron spin precession and subsequent spin phase diffusion. Specifically, we consider modulations in the longitudinal g-factor and hyperfine interaction induced by the phonon-assisted transitions between the lowest electronic states. Prominent differences in the temperature and magnetic field dependence between the proposed mechanisms and the spin-flip transitions are expected to facilitate its experimental verification. Numerical estimation demonstrates highly efficient spin relaxation in typical semiconductor quantum dots.

cond-mat.mtrl-sci↗

arXiv2003

Electron Spin Relaxation under Drift in GaAs

Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of moderate drift fields and/or non-zero injection energies. For relatively low fields (a couple of kV/cm), a substantial amount of spin polarization is preserved for several microns at 300 K. However, it is also found that the spin relaxation rate increases rapidly with the drift field, scaling as the square of the electron wavevector in the direction of the field. When the electrons are injected with a high energy, a pronounced decrease is observed in the spin relaxation length due to an initial increase in the spin precession frequency. Hence, high-field or high-energy transport conditions may not be desirable for spin-based devices.

cond-mat.mes-hall↗

arXiv2002

Effect of external magnetic field on electron spin dephasing induced by hyperfine interaction in quantum dots

We investigate the influence of an external magnetic field on spin phase relaxation of single electrons in semiconductor quantum dots induced by the hyperfine interaction. The basic decay mechanism is attributed to the dispersion of local effective nuclear fields over the ensemble of quantum dots. The characteristics of electron spin dephasing is analyzed by taking an average over the nuclear spin distribution. We find that the dephasing rate can be estimated as a spin precession frequency caused primarily by the mean value of the local nuclear magnetic field. Furthermore, it is shown that the hyperfine interaction does not fully depolarize electron spin. The loss of initial spin polarization during the dephasing process depends strongly on the external magnetic field, leading to the possibility of effective suppression of this mechanism.

cond-mat.mes-hall↗

arXiv2002

Spin-Lattice Relaxation in Si Quantum Dots

We consider spin-lattice relaxation processes for electrons trapped in lateral Si quantum dots in a $[001]$ inversion layer. Such dots are characterized by strong confinement in the direction perpendicular to the surface and much weaker confinement in the lateral direction. The spin relaxation is assumed to be due to the modulation of electron $g$-factor by the phonon-induced strain, as was shown previously for the shallow donors. The results clearly indicate that the specific valley structure of the ground electron state in Si quantum dots causes strong anisotropy for both the one-phonon and two-phonon spin relaxation rates. In addition, it gives rise to a partial suppression of the two-phonon relaxation in comparison to the spin relaxation of donor electrons.

cond-mat.mtrl-sci↗

arXiv2002

Complicated nature of the gap in MgB2: magnetic field-dependent optical studies

We investigated the magnetic field (H)-dependent optical conductivity spectra of MgB2 thin film in the far-infrared region. The H-dependences can be explained by the increase of normal metallic regions embedded in the superconducting background. The area fraction of the normal metallic region increases rather quickly at low field, but slowly at high field. It follows neither H- nor H^{1/2}-dependences. The results suggest the complicated nature of the superconducting gap in MgB2.

cond-mat.str-el↗

arXiv2002

Enhancement of hole injection for nitride-based light-emitting devices

A novel device design is proposed for a strong enhancement of hole injection current in nitride-based light-emitting heterostructures. Preliminary calculations show orders of magnitude increase in injected hole current when using the proposed superlattice hole injector device based on the real-space transfer concept.

cond-mat↗

arXiv2002

Laterally-doped heterostructures for III-N lasing devices

To achieve a high-density electron-hole plasma in group-III nitrides for efficient light emission, we propose a planar two-dimensional (2D) p-i-n structure that can be created in selectively-doped superlattices and quantum wells. The 2D p-i-n structure is formed in the quantum well layers due to efficient activation of donors and acceptors in the laterally doped barriers. We show that strongly non-equilibrium 2D electron-hole plasma with density above $10^{12} cm^{-2}$ can be realized in the i-region of the laterally biased p-i-n structure, enabling the formation of interband population inversion and stimulated emission from such a LAteral Current pumped Emitter (LACE). We suggest that implementation of the lateral p-i-n structures provides an efficient way of utilizing potential-profile-enhanced doping of superlattices and quantum wells for electric pumping of nitride-based lasers.

cond-mat↗