arXiv subjects

K. Watanabe

Publications and source records attributed to K. Watanabe.

At least 343 records · Page 19Linked to original sources

arXiv2016

Negative Coulomb Drag in Double Bilayer Graphene

Coulomb drag between parallel quantum wells provides a uniquely sensitive measurement of electron correlations since the drag response depends on interactions only. Recently it has been demonstrated that a new regime of strong interactions can be accessed for devices consisting of two monlolayer graphene (MLG) crystals, separated by few layer hexagonal boron-nitride. Here we report measurement of Coulomb drag in a double bilayer graphene (BLG) stucture, where the interaction potential is anticipated to be yet further enhanced compared to MLG. At low temperatures and intermediate densities a new drag response with inverse sign is observed, distinct from the momentum and energy drag mechanisms previously reported in double MLG. We demonstrate that by varying the device aspect ratio the negative drag component can be suppressed and a response showing excellent agreement with the density and temperature dependance predicted for momentum drag in double BLG is found. Our results pave the way for pursuit of emergent phases in strongly interacting bilayers, such as the exciton condensate.

cond-mat.mes-hall↗

arXiv2016

Imaging Cyclotron Orbits of Electrons in Graphene

Electrons in graphene can travel for several microns without scattering at low temperatures, and their motion becomes ballistic, following classical trajectories. When a magnetic field B is applied perpendicular to the plane, electrons follow cyclotron orbits. Magnetic focusing occurs when electrons injected from one narrow contact focus onto a second contact located an integer number of cyclotron diameters away. By tuning the magnetic field B and electron density n in the graphene layer, we observe magnetic focusing peaks. We use a cooled scanning gate microscope to image cyclotron trajectories in graphene at 4.2 K. The tip creates a local change in density that casts a shadow by deflecting electrons flowing nearby; an image of flow can be obtained by measuring the transmission between contacts as the tip is raster scanned across the sample. On the first magnetic focusing peak, we image a cyclotron orbit that extends from one point contact to the other. In addition, we study the geometry of orbits deflected into the second point contact by the tip.

cond-mat.mes-hall↗

arXiv2015

High responsivity phototransistors based on few-layer ReS2 for weak signal detection

Two-dimensional transition metal dichalcogenides are emerging with tremendous potential in many optoelectronic applications due to their strong light-matter interactions. To fully explore their potential in photoconductive detectors, high responsivity and weak signal detection are required. Here, we present high responsivity phototransistors based on few-layer rhenium disulfide (ReS2). Depending on the back gate voltage, source drain bias and incident optical light intensity, the maximum attainable photoresponsivity can reach as high as 88,600 A W-1, which is a record value compared to other two-dimensional materials with similar device structures and two orders of magnitude higher than that of monolayer MoS2. Such high photoresponsivity is attributed to the increased light absorption as well as the gain enhancement due to the existence of trap states in the few-layer ReS2 flakes. It further enables the detection of weak signals, as successfully demonstrated with weak light sources including a lighter and limited fluorescent lighting. Our studies underscore ReS2 as a promising material for future sensitive optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2015

Quantum oscillations of the critical current and high-field superconducting proximity in ballistic graphene

Graphene-based Josephson junctions provide a novel platform for studying the proximity effect due to graphene's unique electronic spectrum and the possibility to tune junction properties by gate voltage. Here we describe graphene junctions with a mean free path of several micrometres, low contact resistance and large supercurrents. Such devices exhibit pronounced Fabry-Pérot oscillations not only in the normal-state resistance but also in the critical current. The proximity effect is mostly suppressed in magnetic fields below 10mT, showing the conventional Fraunhofer pattern. Unexpectedly, some proximity survives even in fields higher than 1 T. Superconducting states randomly appear and disappear as a function of field and carrier concentration, and each of them exhibits a supercurrent carrying capacity close to the universal quantum limit. We attribute the high-field Josephson effect to mesoscopic Andreev states that persist near graphene edges. Our work reveals new proximity regimes that can be controlled by quantum confinement and cyclotron motion.

cond-mat.mes-hall↗

arXiv2015

Fully dry PMMA transfer of graphene on h-BN using a heating/cooling system

The key to achieve high-quality van der Waals heterostructure devices made of stacking various two-dimensional (2D) layered materials lies in the clean interface without bubbles and wrinkles. Although polymethylmethacrylate (PMMA) is generally used as a sacrificial transfer film due to its strong adhesion property, it is always dissolved in the solvent after the transfer, resulting in the unavoidable PMMA residue on the top surface. This makes it difficult to locate clean interface areas. In this work, we present a fully dry PMMA transfer of graphene onto h-BN using a heating/cooling system which allows identification of clean interface area for high quality graphene/h-BN heterostructure fabrication. The mechanism lies in the utilization of the large difference in thermal expansion coefficients between polymers (PMMA/PDMS) and inorganic materials (graphene/h-BN substrate) to mechanically peel off PMMA from graphene by the thermal shrinkage of polymers, leaving no PMMA residue on the graphene surface. This method can be applied to all types of 2D layered materials.

cond-mat.mtrl-sci↗

arXiv2015

Heavy-flavour and quarkonium production in the LHC era: from proton-proton to heavy-ion collisions

This report reviews the study of open heavy-flavour and quarkonium production in high-energy hadronic collisions, as tools to investigate fundamental aspects of Quantum Chromodynamics, from the proton and nucleus structure at high energy to deconfinement and the properties of the Quark-Gluon Plasma. Emphasis is given to the lessons learnt from LHC Run 1 results, which are reviewed in a global picture with the results from SPS and RHIC at lower energies, as well as to the questions to be addressed in the future. The report covers heavy flavour and quarkonium production in proton-proton, proton-nucleus and nucleus-nucleus collisions. This includes discussion of the effects of hot and cold strongly interacting matter, quarkonium photo-production in nucleus-nucleus collisions and perspectives on the study of heavy flavour and quarkonium with upgrades of existing experiments and new experiments. The report results from the activity of the SaporeGravis network of the I3 Hadron Physics programme of the European Union 7th Framework Programme.

nucl-ex↗

arXiv2015

WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature

Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature external quantum efficiency (EQE) of 1%. However, the EQE of MoS2 and MoSe2-based LEQWs shows behavior common for many other materials: it decreases fast from cryogenic conditions to room temperature, undermining their practical applications. Here we compare MoSe2 and WSe2 LEQWs. We show that the EQE of WSe2 devices grows with temperature, with room temperature EQE reaching 5%, which is 250x more than the previous best performance of MoS2 and MoSe2 quantum wells in ambient conditions. We attribute such a different temperature dependences to the inverted sign of spin-orbit splitting of conduction band states in tungsten and molybdenum dichalcogenides, which makes the lowest-energy exciton in WSe2 dark.

cond-mat.mes-hall↗

arXiv2015

Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride

Hexagonal boron nitride (BN) is widely used as a substrate and gate insulator for two-dimensional (2D) electronic devices. The studies on insulating properties and electrical reliability of BN itself, however, are quite limited. Here, we report a systematic investigation of the dielectric breakdown characteristics of BN using conductive atomic force microscopy. The electric field strength was found to be ~12 MV/cm, which is comparable to that of conventional SiO2 oxides because of the covalent bonding nature of BN. After the hard dielectric breakdown, the BN fractured like a flower into equilateral triangle fragments. However, when the applied voltage was terminated precisely in the middle of the dielectric breakdown, the formation of a hole that did not penetrate to the bottom metal electrode was clearly observed. Subsequent I-V measurements of the hole indicated that the BN layer remaining in the hole was still electrically inactive. Based on these observations, layer-by-layer breakdown was confirmed for BN with regard to both physical fracture and electrical breakdown. Moreover, statistical analysis of the breakdown voltages using a Weibull plot suggested the anisotropic formation of defects. These results are unique to layered materials and unlike the behavior observed for conventional 3D amorphous oxides.

cond-mat.mtrl-sci↗

arXiv2015

Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs

The combination of h-BN and high-k dielectrics is required for a top gate insulator in miniaturized graphene field-effect transistors because of the low dielectric constant of h-BN. We investigated the deposition of Y2O3 on h-BN using atomic layer deposition. The deposition of Y2O3 on h-BN was confirmed without any buffer layer. An increase in the deposition temperature reduced the surface coverage. The deposition mechanism could be explained by the competition between the desorption and adsorption of the Y precursor on h-BN due to the polarization. Although a full surface coverage was difficult to achieve, the use of an oxidized metal seeding layer on h-BN resulted in a full surface coverage.

cond-mat.mtrl-sci↗

arXiv2015

Point contacts in encapsulated graphene

We present a novel method to establish inner point contacts on hexagonal boron nitride (hBN) encapsulated graphene heterostructures with dimensions as small as 100 nm by pre-patterning the top-hBN in a separate step prior to dry-stacking. 2 and 4-terminal field effect measurements between different lead combinations are in qualitative agreement with an electrostatic model assuming pointlike contacts. The measured contact resistances are 0.5-1.5 k$Ω$ per contact, which is quite low for such small contacts. By applying a perpendicular magnetic fields, an insulating behaviour in the quantum Hall regime was observed, as expected for inner contacts. The fabricated contacts are compatible with high mobility graphene structures and open up the field for the realization of several electron optical proposals.

cond-mat.mes-hall↗

arXiv2015

Simultaneous Observation of Solar Neutrons from the ISS and High Mountain Observatories in association with a flare on July 8, 2014

An M6.5-class flare was observed at N12E56 of the solar surface at 16:06 UT on July 8, 2014. In association with this flare, solar neutron detectors located on two high mountains, Mt. Sierra Negra and Chacaltaya and at the space station observed enhancements in the neutral channel. The authors analysed these data and a possible scenario of enhancements produced by high-energy protons and neutrons is proposed, using the data from continuous observation of a solar surface by the ultraviolet telescope onboard the Solar Dynamical Observatory (SDO).

astro-ph.SR↗

arXiv2015

Evidence for defect-mediated tunneling in hexagonal boron nitride-based junctions

We investigate tunneling in metal-insulator-metal junctions employing few atomic layers of hexagonal boron nitride (hBN) as the insulating barrier. While the low-bias tunnel resistance increases nearly exponentially with barrier thickness, subtle features are seen in the current-voltage curves, indicating marked influence of the intrinsic defects present in the hBN insulator on the tunneling transport. In particular, single electron charging events are observed, which are more evident in thicker-barrier devices where direct tunneling is substantially low. Furthermore, we find that annealing the devices modifies the defect states and hence the tunneling signatures.

cond-mat.mes-hall↗

arXiv2015

Measurement of the Transmission Phase of an Electron in a Quantum Two-Path Interferometer

A quantum two-path interferometer allows for direct measurement of the transmission phase shift of an electron, providing useful information on coherent scattering problems. In mesoscopic systems, however, the two-path interference is easily smeared by contributions from other paths, and this makes it difficult to observe the \textit{true} transmission phase shift. To eliminate this problem, multi-terminal Aharonov-Bohm (AB) interferometers have been used to derive the phase shift by assuming that the relative phase shift of the electrons between the two paths is simply obtained when a smooth shift of the AB oscillations is observed. Nevertheless the phase shifts using such a criterion have sometimes been inconsistent with theory. On the other hand, we have used an AB ring contacted to tunnel-coupled wires and acquired the phase shift consistent with theory when the two output currents through the coupled wires oscillate with well-defined anti-phase. Here, we investigate thoroughly these two criteria used to ensure a reliable phase measurement, the anti-phase relation of the two output currents and the smooth phase shift in the AB oscillation. We confirm that the well-defined anti-phase relation ensures a correct phase measurement with a quantum two-path interference. In contrast we find that even in a situation where the anti-phase relation is less well-defined, the smooth phase shift in the AB oscillation can still occur but does not give the correct transmission phase due to contributions from multiple paths. This indicates that the phase relation of the two output currents in our interferometer gives a good criterion for the measurement of the \textit{true} transmission phase while the smooth phase shift in the AB oscillation itself does not.

cond-mat.mes-hall↗

arXiv2015

Graphene on hexagonal boron nitride as a tunable hyperbolic metamaterial

Hexagonal boron nitride (h-BN) is a natural hyperbolic material, for which the dielectric constants are the same in the basal plane (epsilon^t = epsilon^x = epsilon^y) but have opposite signs (epsilon^t*epsilon^z < 0) from that in the normal plane (epsilon^z). Due to this property, finite-thickness slabs of h-BN act as multimode waveguides for propagation of hyperbolic phonon polaritons - collective modes that originate from the coupling between photons and electric dipoles in phonons. However, control of these hyperbolic phonon polaritons modes has remained challenging, mostly because their electrodynamic properties are dictated by the crystal lattice of h-BN. Here we show by direct nano-infrared imaging that these hyperbolic polaritons can be effectively modulated in a van der Waals heterostructure composed of monolayer graphene on h-BN. Tunability originates from the hybridization of surface plasmon polaritons in graphene with hyperbolic phonon polaritons in h-BN, so that the eigenmodes of the graphene/h-BN heterostructure are hyperbolic plasmon-phonon polaritons. Remarkably, the hyperbolic plasmon-phonon polaritons in graphene/h-BN suffer little from ohmic losses, making their propagation length 1.5-2.0 times greater than that of hyperbolic phonon polaritons in h-BN. The hyperbolic plasmon-phonon polaritons possess the combined virtues of surface plasmon polaritons in graphene and hyperbolic phonon polaritons in h-BN. Therefore, graphene/h-BN structures can be classified as electromagnetic metamaterials since the resulting properties of these devices are not present in its constituent elements alone.

cond-mat.mes-hall↗

arXiv2015

Visualization of phase-coherent electron interference in a ballistic graphene Josephson junction

Interference of standing waves in electromagnetic resonators forms the basis of many technologies, from telecommunications and spectroscopy to detection of gravitational waves. However, unlike the confinement of light waves in vacuum, the interference of electronic waves in solids is complicated by boundary properties of the crystal, notably leading to electron guiding by atomic-scale potentials at the edges. Understanding the microscopic role of boundaries on coherent wave interference is an unresolved question due to the challenge of detecting charge flow with submicron resolution. Here we employ Fraunhofer interferometry to achieve real-space imaging of cavity modes in a graphene Fabry-Perot resonator, embedded between two superconductors to form a Josephson junction. By directly visualizing current flow using Fourier methods, our measurements reveal surprising redistribution of current on and off resonance. These findings provide direct evidence of separate interference conditions for edge and bulk currents and reveal the ballistic nature of guided edge states. Beyond equilibrium, our measurements show strong modulation of the multiple Andreev reflection amplitude on an off resonance, a direct measure of the gate-tunable change of cavity transparency. These results demonstrate that, contrary to the common belief, electron interactions with realistic disordered edges facilitate electron wave interference and ballistic transport.

cond-mat.mes-hall↗

arXiv2015

Specular Interband Andreev Reflections in Graphene

Electrons incident from a normal metal onto a superconductor are reflected back as holes - a process called Andreev reflection. In a normal metal where the Fermi energy is much larger than a typical superconducting gap, the reflected hole retraces the path taken by the incident electron. In graphene with ultra low disorder, however, the Fermi energy can be tuned to be smaller than the superconducting gap. In this unusual limit, the holes are expected to be reflected specularly at the superconductor-graphene interface due to the onset of interband Andreev processes, where the effective mass of the reflected holes change sign. Here we present measurements of gate modulated Andreev reflections across the low disorder van der Waals interface formed between graphene and the superconducting NbSe2. We find that the conductance across the graphene-superconductor interface exhibits a characteristic suppression when the Fermi energy is tuned to values smaller than the superconducting gap, a hallmark for the transition between intraband retro- and interband specular- Andreev reflections.

cond-mat.mes-hall↗

arXiv2015

Emergence of the minority hole with high mobility on the electrical transport in the Fe-pnictides Ba(Fe$_{1-x}$Mn$_x$As)$_2$

In Fe pnictide (Pn) superconducting materials, neither Mn- nor Cr- doping to the Fe site induces superconductivity, even though hole carriers are generated. This is in strong contrast with the superconductivity appearing when holes are introduced by alkali metal substitution on the insulating blocking layers. We investigate in detail the effects of Mn doping on magneto-transport properties in Ba(Fe$_{1-x}$Mn$_x$As)$_2$ for elucidating the intrinsic reason. The negative Hall coefficient for $x$ = 0 estimated in the low magnetic field ($B$) regime gradually increases as $x$ increases, and its sign changes to a positive one at $x$ = 0.020. Hall resistivities as well as simultaneous interpretation using the magnetoconductivity tensor including both longitudinal and transverse transport components clarify that minority holes with high mobility are generated by the Mn doping via spin density wave (SDW) transition at low temperatures, while original majority electrons and holes residing in the parabolic-like Fermi surfaces (FSs) of the semimetallic Ba(FeAs)$_2$ are negligibly affected. Present results indicate that the mechanism of hole doping in Ba(Fe$_{1-x}$Mn$_x$As)$_2$ is greatly different from that of the other superconducting FePns family.

cond-mat.supr-con↗

arXiv2015

Gate-modulated conductance of few-layer WSe_2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe2 field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1-2x10^13 /cm^2/eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices.

cond-mat.mes-hall↗