Searcharxiv⌕ Search

arXiv subjects

K. Watanabe

Publications and source records attributed to K. Watanabe.

At least 145 records · Page 8Linked to original sources

Symmetry breaking and anomalous conductivity in a double moiré superlattice

A double moiré superlattice can be realized by stacking three layers of atomically thin two-dimensional materials with designer interlayer twisting or lattice mismatches. In this novel structure, atomic reconstruction of constituent layers could introduce significant modifications to the lattice symmetry and electronic structure at small twist angles. Here, we employ conductive atomic force microscopy (cAFM) to investigate symmetry breaking and local electrical properties in twisted trilayer graphene. We observe clear double moiré superlattices with two distinct moire periods all over the sample. At neighboring domains of the large moiré, the current exhibit either two- or six-fold rotational symmetry, indicating delicate symmetry breaking beyond the rigid model. Moreover, an anomalous current appears at the 'A-A' stacking site of the larger moiré, contradictory to previous observations on twisted bilayer graphene. Both behaviors can be understood by atomic reconstruction, and we also show that the cAFM signal of twisted graphene samples is dominated by the tip-graphene contact resistance that maps the local work function of twisted graphene and the metallic tip qualitatively. Our results unveil cAFM is an effective probe for visualizing atomic reconstruction and symmetry breaking in novel moiré superlattices, which could provide new insights for exploring and manipulating more exotic quantum states based on twisted van der Waals heterostructures.

cond-mat.mes-hall↗

CVD bilayer graphene spin valves with 26 $μ$m spin diffusion length at room temperature

We present inverted spin-valves fabricated from CVD-grown bilayer graphene (BLG) that show more than a doubling in device performance at room temperature compared to state-of-the art bilayer graphene spin-valves. This is made possible by a PDMS droplet-assisted full-dry transfer technique that compensates for previous process drawbacks in device fabrication. Gate-dependent Hanle measurements show spin lifetimes of up to 5.8 ns and a spin diffusion length of up to 26 $μ$m at room temperature combined with a charge carrier mobility of $\approx$ 24 000 cm$^{2}$(Vs)$^{-1}$ for the best device. Our results demonstrate that CVD-grown BLG shows equally good room temperature spin transport properties as both CVD-graphene and even exfoliated single-layer graphene.

cond-mat.mes-hall↗

A new flavor of correlation and superconductivity in small twist-angle trilayer graphene

When layers of graphene are rotationally misaligned by the magic angle, the moiré superlattice features extremely flat bands. Due to the enhanced density of states, the Coulomb interaction induces a variety of instabilities. The most prominent occur at integer filling and are therefore commonly attributed to spontaneous polarization of the moiré unit cell's `flavor' degrees of freedom -- spin, valley, and the flat-band degeneracy. As the dominant member of the hierarchy, these correlated states are thought to crucially determine further instabilities at lower energy scales, such as superconductivity and weaker incompressible states at fractional filling. In this work, we examine the behavior of twisted trilayer graphene in a window of twist angle around $1.3^{\circ}$, well below the expected magic angle of $1.55^{\circ}$. In this small twist angle regime, we find surprisingly narrow bands, which are populated with both an abundance of correlation-driven states at fractional filling as well as robust superconductivity. The absence of linear-in-$T$ resistivity without significant reduction of the superconducting transition temperature, provides insights into the origin of both phenomena. Most remarkably, the hierarchy between integer and fractional filling is absent, indicating that flavor polarization does not play a governing role. The prominence of fractional filling in the small twist angle regime also points towards a longer-range effective Coulomb interaction. Combined, our results shed new light on outstanding questions in the field, while establishing the small twist angle regime as a new paradigm for exploring novel flavors of moiré physics.

cond-mat.mes-hall↗

Zero-field superconducting diode effect in small-twist-angle trilayer graphene

The critical current of a superconductor can be different for opposite directions of current flow when both time-reversal and inversion symmetry are broken. %When time-reversal and inversion symmetry are simultaneously broken, the critical current of a 2D superconductor is expected to depend on the directions of current flow. Such nonreciprocal behavior in superconducting transport, which creates a superconducting diode, has recently been demonstrated experimentally by breaking these symmetries with an applied magnetic field \cite{Ando2020diodes} or by construction of a magnetic tunnel junction \cite{Diez2021magnetic}. Here we report an intrinsic superconducting diode effect which is present at zero external magnetic field in mirror symmetric twisted trilayer graphene (tTLG). Such nonreciprocal behavior, with sign that can be reversed through training with an out-of-plane magnetic field, provides direct evidence of the microscopic coexistence between superconductivity and time-reversal symmetry breaking. In addition to the magnetic-field trainability, we show that the zero-field diode effect can be controlled by varying carrier density or twist angle. In accordance with these experimental controls, a natural interpretation for the origin of the intrinsic diode effect is an imbalance in valley occupation of the underlying Fermi surface, which likely leads to finite-momentum Cooper pairing and nematicity in the superconducting phase.

cond-mat.mes-hall↗

Determination of topological edge quantum numbers of fractional quantum Hall phases

To determine the topological quantum numbers of fractional quantum Hall (FQH) states hosting counter-propagating (CP) downstream ($N_d$) and upstream ($N_u$) edge modes, it is pivotal to study quantized transport both in the presence and absence of edge mode equilibration. While reaching the non-equilibrated regime is challenging for charge transport, we target here the thermal Hall conductance $G_{Q}$, which is purely governed by edge quantum numbers $N_d$ and $N_u$. Our experimental setup is realized with a hBN encapsulated graphite gated monolayer graphene device. For temperatures up to $35mK$, our measured $G_{Q}$ at $ν= $ 2/3 and 3/5 (with CP modes) match the quantized values of non-equilibrated regime $(N_d + N_u)κ_{0}T$, where $κ_{0}T$ is a quanta of $G_{Q}$. With increasing temperature, $G_{Q}$ decreases and eventually takes the value of equilibrated regime $|N_d - N_u|κ_{0}T$. By contrast, at $ν= $1/3 and 2/5 (without CP modes), $G_Q$ remains robustly quantized at $N_dκ_{0}T$ independent of the temperature. Thus, measuring the quantized values of $G_{Q}$ at two regimes, we determine the edge quantum numbers, which opens a new route for finding the topological order of exotic non-Abelian FQH states.

cond-mat.mes-hall↗

Out-of-equilibrium criticalities in graphene superlattices

In thermodynamic equilibrium, current in metallic systems is carried by electronic states near the Fermi energy whereas the filled bands underneath contribute little to conduction. Here we describe a very different regime in which carrier distribution in graphene and its superlattices is shifted so far from equilibrium that the filled bands start playing an essential role, leading to a critical-current behavior. The criticalities develop upon the velocity of electron flow reaching the Fermi velocity. Key signatures of the out-of-equilibrium state are current-voltage characteristics resembling those of superconductors, sharp peaks in differential resistance, sign reversal of the Hall effect, and a marked anomaly caused by the Schwinger-like production of hot electron-hole plasma. The observed behavior is expected to be common for all graphene-based superlattices.

cond-mat.other↗

THz radiation induced circular Hall effect in graphene

We report on the observation of the circular transversal terahertz photoconductivity in monolayer graphene supplied by a back gate. The photoconductivity response is caused by the free carrier absorption and reverses its sign upon switching the radiation helicity. The observed dc Hall effect manifests the time inversion symmetry breaking induced by circularly polarized terahertz radiation in the absence of a magnetic field. For low gate voltages, the photosignal is found to be proportional to the radiation intensity and can be ascribed to the alignment of electron momenta by the combined action of THz and static electric fields as well as by the dynamic heating and cooling of the electron gas. Strikingly, at high gate voltages, we observe that the linear-in-intensity Hall photoconductivity vanishes; the photoresponse at low intensities becomes superlinear and varies with the square of the radiation intensity. We attribute this behavior to the interplay of the second- and fourth-order effects in the radiation electric field which has not been addressed theoretically so far and requires additional studies.

cond-mat.mes-hall↗

Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride

In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permittivity and high-field strength and conductivity up to the breakdown voltage. The present study aims at filling this gap using DC and RF transport in two Au-hBN-Au capacitor series of variable thickness in the 10--100 nm range, made of large high-pressure, high-temperature (HPHT) crystals and a polymer derivative ceramics (PDC) crystals. We deduce an out-of-plane low field dielectric constant $ε_\parallel=3.4\pm0.2$ consistent with the theoretical prediction of Ohba et al., that narrows down the generally accepted window $ε_\parallel=3$--$4$. The DC-current leakage at high-field is found to obey the Frenkel-Pool law for thermally-activated trap-assisted electron transport with a dynamic dielectric constant $ε_\parallel\simeq3.1$ and a trap energy $Φ_B\simeq1.3\;\mathrm{eV}$, that is comparable with standard technologically relevant dielectrics.

cond-mat.mtrl-sci↗

Quantization of mode shifts in nanocavities integrated with atomically thin sheets

The unique optical properties of two-dimensional layered materials are attractive for achieving increased functionality in integrated photonics. Owing to the van der Waals nature, these materials are ideal for integrating with nanoscale photonic structures. Here we report on carefully designed air-mode silicon photonic crystal nanobeam cavities for efficient control through two-dimensional materials. By systematically investigating various types and thickness of two-dimensional materials, we are able to show that enhanced responsivity allows for giant shifts of the resonant wavelength. With atomically precise thickness over a macroscopic area, few-layer flakes give rise to quantization of the mode shifts. We extract the dielectric constant of the flakes and find that it is independent of the layer number down to a monolayer. Flexible reconfiguration of a cavity is demonstrated by stacking and removing ultrathin flakes. With an unconventional cavity design, our results open up new possibilities for photonic devices integrated with two-dimensional materials.

physics.optics↗

Carbon and vacancy centers in hexagonal boron nitride

Creation of defect with predetermined optical, chemical and other characteristics is a powerful tool to enhance the functionalities of materials. Herewith, we utilize density functional theory to understand the microscopic mechanisms of formation of defects in hexagonal boron nitride based on vacancies and substitutional atoms. Through in-depth analysis of the defect-induced band structure and formation energy in varying growth conditions, we uncovered a dominant role of interdefect electron paring in stabilization of defect complexes. The electron reorganization modifies the exchange component of the electronic interactions which dominates over direct Coulomb repulsion or structural relaxation effects making the combination of acceptor- and donor-type defect centers energetically favorable. Based on an analysis of a large number of defect complexes we develop a simple picture of the inheritance of electronic properties when individual defects are combined together to form more complex centers.

cond-mat.mtrl-sci↗

The accomplishment of the Engineering Design Activities of IFMIF/EVEDA: The European Japanese project towards a Li(d,xn) fusion relevant neutron source

The International Fusion Materials Irradiation Facility (IFMIF), presently in its Engineering Validation and Engineering Design Activities (EVEDA) phase under the frame of the Broader Approach Agreement between Europe and Japan, accomplished in summer 2013, on schedule, its EDA phase with the release of the engineering design report of the IFMIF plant, which is here described. Many improvements of the design from former phases are implemented, particularly a reduction of beam losses and operational costs thanks to the superconducting accelerator concept, the re-location of the quench tank outside the test cell (TC) with a reduction of tritium inventory and a simplification on its replacement in case of failure, the separation of the irradiation modules from the shielding block gaining irradiation flexibility and enhancement of the remote handling equipment reliability and cost reduction, and the water cooling of the liner and biological shielding of the TC, enhancing the efficiency and economy of the related sub-systems. In addition, the maintenance strategy has been modified to allow a shorter yearly stop of the irradiation operations and a more careful management of the irradiated samples. The design of the IFMIF plant is intimately linked with the EVA phase carried out since the entry into force of IFMIF/EVEDA in June 2007.

physics.acc-ph↗

Detection of graphene's divergent orbital diamagnetism at the Dirac point

The electronic properties of graphene have been intensively investigated over the last decade, and signatures of the remarkable features of its linear Dirac spectrum have been displayed using transport and spectroscopy experiments. In contrast, the orbital magnetism of graphene, which is one of the most fundamental signature of the characteristic Berry phase of graphene's electronic wave functions, has not yet been measured in a single flake. In particular, the striking prediction of a divergent diamagnetic response at zero doping calls for an experimental test. Using a highly sensitive Giant Magnetoresistance sensor (GMR) we have measured the gate voltage-dependent magnetization of a single graphene monolayer encapsulated between boron nitride crystals. The signal exhibits a diamagnetic peak at the Dirac point whose magnetic field and temperature dependences agree with theoretical predictions starting from the work of Mc Clure \cite{McClure1956}. Our measurements open a new field of investigation of orbital currents in graphene and 2D topological materials, offering a new means to monitor Berry phase singularities and explore correlated states generated by combined effects of Coulomb interactions, strain or moiré potentials.

cond-mat.mes-hall↗

SPring-8 LEPS2 beamline: A facility to produce a multi-GeV photon beam via laser Compton scattering

We have constructed a new laser-Compton-scattering facility, called the LEPS2 beamline, at the 8-GeV electron storage ring, SPring-8. This facility provides a linearly polarized photon beam in a tagged energy range of 1.3--2.4 GeV. Thanks to a small divergence of the low-emittance storage-ring electrons, the tagged photon beam has a size (sigma) suppressed to about 4 mm even after it travels about 130 m to the experimental building that is independent of the storage ring building and contains large detector systems. This beamline is designed to achieve a photon beam intensity higher than that of the first laser-Compton-scattering beamline at SPring-8 by adopting the simultaneous injection of up to four high-power laser beams and increasing a transmittance for the long photon-beam path up to about 77%. The new beamline is under operation for hadron photoproduction experiments.

physics.acc-ph↗

Emergence of broken-symmetry states at half-integer band fillings in twisted bilayer graphene

The dominance of Coulomb interactions over kinetic energy of electrons in narrow, non-trivial moiré bands of magic-angle twisted bilayer graphene (TBG) gives rise to a variety of correlated phases such as correlated insulators, superconductivity, orbital ferromagnetism, Chern insulators and nematicity. Most of these phases occur at or near an integer number of carriers per moiré unit cell. Experimental demonstration of ordered states at fractional moiré band-fillings at zero applied magnetic field $B$, is a challenging pursuit. In this letter, we report the observation of states near half-integer band-fillings of $ν\approx 0.5$ and $\pm3.5$ at $B\approx 0$ in TBG proximitized by tungsten diselenide (WSe$_2$) through magnetotransport and thermoelectricity measurements. A series of Lifshitz transitions due to the changes in the topology of the Fermi surface implies the evolution of van Hove singularities (VHSs) of the diverging density of states (DOS) at a discrete set of partial fillings of flat bands. Furthermore, at a band filling of $ν\approx-0.5$, a symmetry-broken Chern insulator emerges at high $B$, compatible with the band structure calculations within a translational symmetry-broken supercell with twice the area of the original TBG moiré cell. Our results are consistent with a spin/charge density wave ground state in TBG in the zero $B$-field limit.

cond-mat.mes-hall↗

Nonlinear intensity dependence of photogalvanics and photoconductance induced by terahertz laser radiation in twisted bilayer graphene close to magic angle

We report on the observation of the nonlinear intensity dependence of the bulk photogalvanic current and photoconductivity in the twisted graphene with small twist angles close to the second magical angle. We show that terahertz radiation results in the photoresponses, which is caused by indirect optical transitions (free carrier absorption), direct interband transitions and optical transitions between Moiré subbands. The relative contribution of these absorption channels depends on the Fermi level position with respect to the multiple Moiré subbands of the twisted graphene. The interplay of these absorption channels results in oscillations of the photoresponses with variation of the gate voltage. We show that the photoresponse saturates at high intensities. For different absorption channels it has different intensity dependencies and saturation intensities. The latter depends non-monotonically on the Fermi level position, which is controlled by the gate voltage.

cond-mat.mes-hall↗

Oscillating paramagnetic Meissner effect and Berezinskii-Kosterlitz-Thouless transition in $Bi_2Sr_2CaCu_2O_{8+δ}$ monolayer

Monolayers of a prototypical cuprate high transition-temperature ($T_C$) superconductor $Bi_2Sr_2CaCu_2O_{8+δ}$ (Bi2212) was recently found to show $T_C$ and other electronic properties similar to those of the bulk. The robustness of superconductivity in an ideal two-dimensional (2D) system was an intriguing fact that defied the Mermin-Wagner theorem. Here, we took advantage of the high sensitivity of scanning SQUID susceptometry to image the phase stiffness throughout the phase transition of Bi2212 in the 2D limit. We found susceptibility oscillated with flux between diamagnetism and paramagnetism in a Fraunhofer-like pattern up till $T_C$. The temperature and sample size-dependence of the modulation period agreed well with our Coulomb gas analogy of a finite 2D system based on Berezinskii-Kosterlitz-Thouless (BKT) transition. In the multilayers, the susceptibility oscillation differed in a small temperature regime below $T_C$ in consistent with a dimensional-crossover led by interlayer coupling. Serving as strong evidence of BKT transition in the bulk, there appeared a sharp superfluid density jump at zero-field and paramagnetism at small fields just below $T_C$. These results unified the phase transitions from the monolayer Bi2212 to the bulk as BKT transition with finite interlayer coupling. This elucidating picture favored the pre-formed pairs scenario for the underdoped cuprates regardless of lattice dimensionality.

cond-mat.supr-con↗

Coulomb screening and thermodynamic measurements in magic-angle twisted trilayer graphene

The discovery of magic-angle twisted trilayer graphene (tTLG) adds a new twist to the family of graphene moiré. The additional graphene layer unlocks a series of intriguing properties in the superconducting phase, such as the violation of Pauli limit and re-entrant superconductivity at large in-plane magnetic field. In this work, we integrate magic-angle tTLG into a double-layer structure to study the superconducting phase. Utilizing proximity screening from the adjacent metallic layer, we examine the stability of the superconducting phase and demonstrate that Coulomb repulsion competes against the mechanism underlying Cooper pairing. Furthermore, we use a combination of transport and thermodynamic measurements to probe the isospin order, which points towards a spin-polarized and valley-unpolarized isospin configuration at half moiré filling, and for the nearby fermi surface. Our findings provide important constraints for theoretical models aiming to understand the nature of superconductivity. A possible scenario is that electron-phonon coupling stabilizes a superconducting phase with a spin-triplet, valley singlet order parameter.

cond-mat.mes-hall↗

Optical sensing of fractional quantum Hall effect in graphene

Graphene and its van der Waals (vdW) heterostructures provide a unique and versatile playground for explorations of strongly correlated electronic phases, ranging from unconventional fractional quantum Hall (FQH) states in a monolayer system to a plethora of superconducting and insulating states in twisted bilayers. However, the access to those fascinating phases has been thus far entirely restricted to transport techniques, due to the lack of a robust energy bandgap that makes graphene hard to access optically. Here we demonstrate an all-optical, non-invasive spectroscopic tool for probing electronic correlations in graphene using excited Rydberg excitons in an adjacent transition metal dichalcogenide monolayer. Due to their large Bohr radii, Rydberg states are highly susceptible to the compressibility of graphene electrons, allowing us to detect the formation of odd-denominator FQH states at high magnetic fields. Owing to its sub-micron spatial resolution, the technique we demonstrate circumvents spatial inhomogeneities in vdW structures, and paves the way for optical studies of correlated states in twisted bilayer graphene and other optically inactive atomically-thin materials.

cond-mat.mes-hall↗