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Kacper Sierakowski

Publications and source records attributed to Kacper Sierakowski.

2 recordsLinked to original sources

Local magnetic correlations and light-sensitive centers in the Cr2AlC MAX phase

Cr2AlC MAX phase is synthesized by high-pressure solid-state annealing and investigated as a candidate platform for optically responsive magnetism. Structural characterization confirms the formation of the Cr2AlC phase, while magnetic and optical-magnetic properties are examined by superconducting quantum interference device (SQUID) magnetometry, electron spin resonance (ESR), and first principles calculations. SQUID magnetometry identifies Cr 2AlC as a weak, field-linear metallic paramagnet dominated by Pauli-like susceptibility of itinerant Cr-derived states. Its non-monotonic temperature dependence is described by an additional contribution from antiferromagnetically coupled Cr-Cr dimers, whereas the low-temperature Curie-like upturn originates from only a trace population of localized Cr centers. Under red-light illumination, SQUID magnetometry does not reveal an intrinsic macroscopic optomagnetic response. In contrast, ESR at 4 K shows a reversible light-induced reduction of a local magnetic signal, but the optically modified spin population corresponds only to several tens of ppm of the Cr sublattice. Ab initio Bethe-Salpeter equation (ai-BSE) calculations combined with the maximally localized Wannier function analysis suggest that optical excitation can redistribute spin polarization between neighboring Cr sites with the opposite local moments. The combined experiment-theory approach therefore establishes the hierarchy of magnetic contributions in Cr 2AlC and identifies the microscopic origin of its local optical sensitivity. This provides a reference for designing MAX phases and related MXenes in which defects, surface terminations or reduced dimensionality may enhance optically active magnetic states.

cond-mat.mtrl-sci

Diffusion of Be in gallium nitride: Experiment and modelling

Diffusion mechanism of beryllium in gallium nitride was investigated by analyzing temperature-dependent diffusion profiles from an infinite source. Beryllium atoms were implanted into a high structural quality gallium nitride layer crystallized by halide vapor phase epitaxy on an ammonothermal gallium nitride substrate. Post-implantation annealing was performed at different temperatures, between 1000°C and 1400°C, under high nitrogen pressure. Beryllium profiles were analyzed in the as-implanted and annealed samples by secondary ion mass spectrometry. It was shown that the diffusion of the dopant results from the combination of two mechanisms: rapid interstitial and slow interstitial-substitutional diffusion. The pre-exponential factor as well as activation energy for both diffusion paths were determined. Moreover, from the characteristic features of beryllium depth profiles, the formation energies of gallium vacancy and beryllium in interstitial position were calculated and compared to the theoretical values.

cond-mat.mtrl-sci