arXiv subjects

Kai Zang

Publications and source records attributed to Kai Zang.

3 recordsLinked to original sources

arXiv2018

Non-line-of-sight Imaging with Partial Occluders and Surface Normals

Imaging objects obscured by occluders is a significant challenge for many applications. A camera that could "see around corners" could help improve navigation and mapping capabilities of autonomous vehicles or make search and rescue missions more effective. Time-resolved single-photon imaging systems have recently been demonstrated to record optical information of a scene that can lead to an estimation of the shape and reflectance of objects hidden from the line of sight of a camera. However, existing non-line-of-sight (NLOS) reconstruction algorithms have been constrained in the types of light transport effects they model for the hidden scene parts. We introduce a factored NLOS light transport representation that accounts for partial occlusions and surface normals. Based on this model, we develop a factorization approach for inverse time-resolved light transport and demonstrate high-fidelity NLOS reconstructions for challenging scenes both in simulation and with an experimental NLOS imaging system.

cs.CV↗

arXiv2017

Titanium dioxide hole-blocking layer in ultra-thin-film crystalline silicon solar cells

One of the remaining obstacles to approaching the theoretical efficiency limit of crystalline silicon (c-Si) solar cells is the exceedingly high interface recombination loss for minority carriers at the Ohmic contacts. In ultra-thin-film c-Si solar cells, this contact recombination loss is far more severe than for traditional thick cells due to the smaller volume and higher minority carrier concentration of the former. This paper presents a novel design of an electron passing (Ohmic) contact to n-type Si that is hole-blocking with significantly reduced hole recombination. This contact is formed by depositing a thin titanium dioxide (TiO2) layer to form a silicon metal-insulator-semiconductor (MIS) contact. A 2 μm thick Si cell with this TiO2 MIS contact achieved an open circuit voltage (Voc) of 645 mV, which is 10 mV higher than that of an ultra-thin cell with a metal contact. This MIS contact demonstrates a new path for ultra-thin-film c-Si solar cells to achieve high efficiencies as high as traditional thick cells, and enables the fabrication of high-efficiency c-Si solar cells at a lower cost.

physics.app-ph↗

arXiv2015

High-efficiency and low-jitter Silicon single-photon avalanche diodes based on nanophotonic absorption enhancement

Silicon single-photon avalanche diode (SPAD) is a core device for single-photon detection in the visible and the near-infrared range, and widely used in many applications. However, due to limits of the structure design and device fabrication for current silicon SPADs, the key parameters of detection befficiency and timing jitter are often forced to compromise. Here, we propose a nanostructured silicon SPAD, which achieves high detection efficiency with excellent timing jitter simultaneously over a broad spectral range. The optical and electric simulations show significant performance enhancement compared with conventional silicon SPAD devices. This nanostructured devices can be easily fabricated and thus well suited for practical applications.

physics.ins-det↗