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Kai-Mei C Fu

Publications and source records attributed to Kai-Mei C Fu.

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Coherent Microwave Control of Optically Addressable Donor Qubits in ZnO

Optically addressable shallow donors in ZnO combine efficient spin-selective optical transitions with the potential for long spin coherence in an isotopically purifiable host lattice, making them an attractive platform for spin-photon quantum technologies. A key missing capability, however, has been coherent control beyond the small-angle rotations accessible with ultrafast optical pulses. Here we demonstrate coherent microwave control of implanted $^{115}\mathrm{In}$ donors in ZnO. Resonant optical pumping initializes and reads out the donor electron spin. Pulsed optically-detected magnetic resonance resolves the ten hyperfine transitions associated with the coupled $^{115}\mathrm{In}$ nuclear spin (I = 9/2) and reveals optical-pumping-induced nuclear spin polarization. We observe coherent Rabi oscillations with a maximum Rabi frequency of $Ω/2π= 36.2 \pm 0.7$\;MHz, corresponding to a $π$-pulse time of 13.8$\pm$0.3\;ns, and characterize the spin coherence using Ramsey, Hahn echo and dynamical-decoupling measurements. Unexpectedly, the measured coherence is substantially shorter than reported in previous optical studies of donor spins in ZnO at high magnetic field. Control experiments rule out several simple explanations including microwave heating and instantaneous diffusion from the driven donor ensemble, leaving an open question regarding the origin of decoherence at low magnetic field in microwave-controlled ZnO donors. These results establish microwave control of ZnO donor qubits with resonant optical access to specific donor species. More broadly, they demonstrate that coherent microwave control can be achieved in optically addressable spin systems with nanosecond-scale inhomogeneous dephasing, enabling field-, temperature-, and materials-dependent studies of coherence-limiting mechanisms and the development of optically interfaced electron-nuclear spin registers.

quant-ph

A window into NV center kinetics via repeated annealing and spatial tracking of thousands of individual NV centers

Knowledge of the nitrogen-vacancy center formation kinetics in diamond is critical to engineering sensors and quantum information devices based on this defect. Here we utilize the longitudinal tracking of single NV centers to elucidate NV defect kinetics during high-temperature annealing from 800-1100 $^\circ$C in high-purity chemical-vapor-deposition diamond. We observe three phenomena which can coexist: NV formation, NV quenching, and NV orientation changes. Of relevance to NV-based applications, a 6 to 24-fold enhancement in the NV density, in the absence of sample irradiation, is observed by annealing at 980 $^\circ$C, and NV orientation changes are observed at 1050 $^\circ$C. With respect to the fundamental understanding of defect kinetics in ultra-pure diamond, our results indicate a significant vacancy source can be activated for NV creation between 950-980 $^\circ$C and suggests that native hydrogen from NVH$_y$ complexes plays a dominant role in NV quenching, in agreement with recent {\it ab initio} calculations. Finally, the direct observation of orientation changes allows us to estimate an NV diffusion barrier of 5.1~eV.

cond-mat.mtrl-sci